VLZ4V7A [VISHAY]
Small Signal Zener Diodes; 小信号齐纳二极管
| 型号： | VLZ4V7A |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Zener Diodes |
| 文件： | 总8页 (文件大小：216K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VLZ-Series
Vishay Semiconductors
Small Signal Zener Diodes
Features
• Very sharp reverse characteristic
• Low reverse current level
• Very high stability
• Low noise
e2
• High reliability
• Lead (Pb)-free component
9612009
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• Voltage stabilization
Mechanical Data
Case: QuadroMELF glass case SOD80
Weight: approx. 34 mg
Cathode band color: black
Packaging codes/options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/2.5 k per 7" reel (8 mm tape), 12.5 k/box
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Ptot
Value
500
Unit
mW
mA
°C
RthJA ≤ 300 K/W
Power dissipation
Z-current
IZ
Tj
Ptot/VZ
Junction temperature
Storage temperature range
175
Tstg
- 65 to + 175
°C
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
RthJA
Value
500
Unit
K/W
Junction to ambient air on PC board 50 mm x 50 mm x 1.6 mm
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
VF
Min
Typ.
Max
1.5
Unit
V
IF = 200 mA
Forward voltage
Document Number 81759
Rev. 1.0, 15-Aug-07
www.vishay.com
1
VLZ-Series
Vishay Semiconductors
Electrical Characteristics
Zener Voltage
Dynamic Resistance
Test Current
Reverse Leakage Current
IR at VR
Part-
number-
group
VZ at IZT
ZZ at IZT
ZZK at IZK
IZT
IZK
Part-
number
V
V
Ω
max
100
100
100
100
80
80
70
70
60
60
50
50
40
40
40
25
25
25
20
20
20
13
13
13
10
10
10
8
Ω
mA
mA
µA
max
70
70
50
50
50
10
10
10
5
V
min
max
2.52
2.63
2.75
2.91
3.07
3.22
3.38
3.53
3.695
3.845
4.01
4.16
4.29
4.43
4.57
4.68
4.8
max
2000
2000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
900
VLZ2V4A
VLZ2V4B
VLZ2V7A
VLZ2V7B
VLZ3V0A
VLZ3V0B
VLZ3V3A
VLZ3V3B
VLZ3V6A
VLZ3V6B
VLZ3V9A
VLZ3V9B
VLZ4V3A
VLZ4V3B
VLZ4V3C
VLZ4V7A
VLZ4V7B
VLZ4V7C
VLZ5V1A
VLZ5V1B
VLZ5V1C
VLZ5V6A
VLZ5V6B
VLZ5V6C
VLZ6V2A
VLZ6V2B
VLZ6V2C
VLZ6V8A
VLZ6V8B
VLZ6V8C
VLZ7V5A
VLZ7V5B
VLZ7V5C
VLZ8V2A
VLZ8V2B
VLZ8V2C
VLZ9V1A
VLZ9V1B
VLZ9V1C
VLZ10A
2.33
2.43
2.54
2.69
2.85
3.01
3.16
3.32
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
10
10
10
1
1
1
1
VLZ2V4
VLZ2V7
VLZ3V0
VLZ3V3
VLZ3V6
VLZ3V9
1
1
1
1
1
1
1
1
1
1
1
1
3.455
3.6
1
1
1
5
1
3.74
3.89
4.04
4.17
4.3
1
3
1
1
3
1
1
3
1
VLZ4V3
VLZ4V7
VLZ5V1
VLZ5V6
VLZ6V2
VLZ6V8
VLZ7V5
VLZ8V2
VLZ9V1
1
3
1
1
3
1
4.44
4.55
4.68
4.81
4.94
5.09
5.28
5.45
5.61
5.78
5.96
6.12
6.29
6.49
6.66
6.85
7.07
7.29
7.53
7.78
8.03
8.29
8.57
8.83
9.12
9.41
9.7
1
10
6
2
900
1
2
4.93
5.07
5.2
900
1
3
2
800
1
2
2
800
1
2
2
5.37
5.55
5.73
5.91
6.09
6.27
6.44
6.63
6.83
7.01
7.22
7.45
7.67
7.92
8.19
8.45
8.73
9.01
9.3
800
1
2
2
500
1
1
2
500
1
1
2
500
1
1
2
300
1
3
4
300
1
3
4
300
1
3
4
150
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
2
4
8
150
2
4
8
150
2
4
8
120
3
6.5
6.73
6.93
7.15
7.39
7.63
7.88
8.14
8.39
8.66
8.94
9.22
9.44
9.67
9.98
10.28
8
120
3
8
120
3
8
120
7.5
7.5
7.5
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
8
120
8
120
8
120
8
120
8
120
9.59
9.9
8
120
VLZ10B
8
120
VLZ10
VLZ11
VLZ10C
10.2
10.44
10.71
11.05
11.38
8
120
VLZ10D
9.94
10.18
10.5
10.82
8
120
VLZ11A
10
10
10
120
VLZ11B
120
VLZ11C
120
www.vishay.com
2
Document Number 81759
Rev. 1.0, 15-Aug-07
VLZ-Series
Vishay Semiconductors
Zener Voltage
VZ at IZT
Dynamic Resistance
Test Current
Reverse Leakage Current
IR at VR
Part-
number-
group
ZZ at IZT
ZZK at IZK
IZT
IZK
Part-
number
V
V
Ω
max
12
12
12
14
14
14
16
16
16
18
18
18
23
23
23
28
28
28
28
30
30
30
30
35
35
35
35
45
45
45
45
55
55
55
55
65
65
65
65
75
75
75
75
Ω
mA
mA
µA
V
min
max
max
110
110
110
110
110
110
110
110
110
150
150
150
150
150
150
200
200
200
200
200
200
200
200
200
200
200
200
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
max
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
VLZ12A
VLZ12B
VLZ12C
VLZ13A
VLZ13B
VLZ13C
VLZ15A
VLZ15B
VLZ15C
VLZ16A
VLZ16B
VLZ16C
VLZ18A
VLZ18B
VLZ18C
VLZ20A
VLZ20B
VLZ20C
VLZ20D
VLZ22A
VLZ22B
VLZ22C
VLZ22D
VLZ24A
VLZ24B
VLZ24C
VLZ24D
VLZ27A
VLZ27B
VLZ27C
VLZ27D
VLZ30A
VLZ30B
VLZ30C
VLZ30D
VLZ33A
VLZ33B
VLZ33C
VLZ33D
VLZ36A
VLZ36B
VLZ36C
VLZ36D
11.13
11.44
11.74
12.11
12.55
12.99
13.44
13.89
14.35
14.8
11.71
12.03
12.35
12.75
13.21
13.66
14.13
14.62
15.09
15.57
16.04
16.51
17.06
17.7
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
10.6
10.9
11.2
11.5
11.9
12.3
12.8
13.2
13.6
14.1
14.5
14.9
15.4
16
VLZ12
VLZ13
VLZ15
VLZ16
VLZ18
15.25
15.69
16.22
16.82
17.42
18.02
18.63
19.23
19.72
20.15
20.64
21.08
21.52
22.05
22.61
23.12
23.63
24.26
24.97
25.63
26.29
26.99
27.7
18.33
18.96
19.59
20.22
20.72
21.2
16.5
17.1
17.7
18.3
18.7
19.1
19.6
20
VLZ20
VLZ22
VLZ24
VLZ27
VLZ30
VLZ33
VLZ36
21.71
22.17
22.63
23.18
23.77
24.31
24.85
25.52
26.26
26.95
27.64
28.39
29.13
29.82
30.51
31.22
31.88
32.5
5
5
5
20.4
20.9
21.5
22
5
5
5
5
22.4
23
5
5
23.7
24.3
25
5
5
5
25.6
26.3
26.9
27.6
28.2
28.8
29.4
29.9
30.5
31.2
31.7
32.3
5
28.36
29.02
29.68
30.32
30.9
5
5
5
5
5
31.49
32.14
32.79
33.4
33.11
33.79
34.49
35.13
35.77
5
5
5
5
34.01
5
Document Number 81759
Rev. 1.0, 15-Aug-07
www.vishay.com
3
VLZ-Series
Vishay Semiconductors
Zener Voltage
VZ at IZT
Dynamic Resistance
Test Current
Reverse Leakage Current
IR at VR
Part-
number-
group
ZZ at IZT
ZZK at IZK
IZT
IZK
Part-
number
V
V
Ω
max
85
Ω
max
250
250
250
250
250
250
250
-
mA
mA
µA
V
min
max
36.47
37.19
37.85
38.52
39.29
40.11
40.8
45
max
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
VLZ39A
VLZ39B
VLZ39C
VLZ39D
VLZ39E
VLZ39F
VLZ39G
VLZ43
34.68
35.36
36
5
5
5
5
5
5
5
5
5
5
5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
-
32.9
33.6
34.2
34.8
35.5
36.2
37
85
85
VLZ39
36.63
37.36
38.14
38.94
40
85
85
85
85
VLZ43
VLZ47
VLZ51
VLZ56
90
38
VLZ47
44
49
90
-
-
41.8
45.6
50.4
VLZ51
48
54
100
100
-
-
VLZ56
53
60
-
-
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
600
500
400
300
200
1.3
1.2
1.1
VZtn = VZt/VZ (25 °C)
TKVZ = 10 x 10-4/K
8 x 10-4/K
6 x 10-4/K
4 x 10-4/K
2 x 10-4/K
0
1.0
0.9
0.8
- 2 x 10-4/K
- 4 x 10-4/K
100
0
200
Tamb - Ambient Temperature (°C)
0
80
120
160
40
240
Tj - Junction Temperature (°C)
0
- 60
60
120
180
95 9602
95 9599
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
1000
15
10
5
Tj = 25 °C
100
IZ = 5 mA
IZ = 5 mA
10
0
- 5
1
25
0
10
15
20
5
50
10
20
VZ - Z-Voltage (V)
Figure 4. Temperature Coefficient of Vz vs. Z-Voltage
0
30
40
95 9598
VZ - Z-Voltage (V)
95 9600
Figure 2. Typical Change of Working Voltage under Operating
Conditions at Tamb = 25°C
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4
Document Number 81759
Rev. 1.0, 15-Aug-07
VLZ-Series
Vishay Semiconductors
50
40
30
200
150
100
Ptot = 500 mW
Tamb = 25 °C
VR = 2 V
Tj = 25 °C
20
10
0
50
0
25
35
0
10
15
20
15
20
25
30
5
95 9607
95 9601
VZ - Z-Voltage (V)
VZ - Z-Voltage (V)
Figure 5. Diode Capacitance vs. Z-Voltage
Figure 8. Z-Current vs. Z-Voltage
1000
100
10
100
10
IZ = 1 mA
Tj = 25 °C
1
5 mA
0.1
0.01
10 mA
Tj = 25 °C
1
0.001
25
1.0
0
5
10
15
20
0
0.2
VF - Forward Voltage (V)
Figure 6. Forward Current vs. Forward Voltage
0.4
0.6
0.8
95 9606
VZ - Z-Voltage (V)
95 9605
Figure 9. Differential Z-Resistance vs. Z-Voltage
100
80
Ptot = 500 mW
Tamb = 25 °C
60
40
20
0
12
20
0
4
6
8
95 9604
VZ - Z-Voltage (V)
Figure 7. Z-Current vs. Z-Voltage
Document Number 81759
Rev. 1.0, 15-Aug-07
www.vishay.com
5
VLZ-Series
Vishay Semiconductors
1000
tP/T = 0.5
100
tP/T = 0.2
Single Pulse
RthJA = 300 K/W
T = Tjmax - Tamb
10
tP/T = 0.01
tP/T = 0.1
tP/T = 0.02
tP/T = 0.05
iZM = (- VZ + (VZ2 + 4rzj x T/Zthp 1/2)/(2rzj)
)
1
10-1
100
101
102
95 9603
tP - Pulse Length (ms)
Figure 10. Thermal Response
Package Dimensions in millimeters (inches): QuadroMELF SOD80
96 12071
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6
Document Number 81759
Rev. 1.0, 15-Aug-07
VLZ-Series
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,
and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated
with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81759
Rev. 1.0, 15-Aug-07
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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