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VN0300L-TA [VISHAY]

Small Signal Field-Effect Transistor, 0.64A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA;
VN0300L-TA
型号： VN0300L-TA
厂家： VISHAY    VISHAY
描述：

Small Signal Field-Effect Transistor, 0.64A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

晶体 晶体管 功率场效应晶体管 开关
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TN0201L/0401L, VN0300L/LS  
Vishay Siliconix  
N-Channel 20-, 30-, 40-V (D-S) MOSFETs  
PRODUCT SUMMARY  
Part Number V(BR)DSS Min (V) rDS(on) Max (W)  
VGS(th) (V)  
ID (A)  
TN0201L  
TN0401L  
VN0300L  
VN0300LS  
20  
40  
30  
30  
1.2 @ V = 10 V  
0.5 to 2  
0.5 to 2  
0.64  
0.64  
0.64  
0.67  
GS  
1.2 @ V = 10 V  
GS  
1.2 @ V = 10 V  
0.8 to 2.5  
0.8 to 2.5  
GS  
1.2 @ V = 10 V  
GS  
FEATURES  
BENEFITS  
APPLICATIONS  
D Low On-Resistance: 0.85 W  
D Low Threshold: 1.4 V  
D Low Offset Voltage  
D Direct Logic-Level Interface: TTL/CMOS  
D Low-Voltage Operation  
D Easily Driven Without Buffer  
D High-Speed Circuits  
D Low Error Voltage  
D Drivers: Relays, Solenoids, Lamps, Hammers,  
Displays, Memories, Transistors, etc.  
D Low Input Capacitance: 38 pF  
D Fast Switching Speed: 9 ns  
D Low Input and Output Leakage  
D Battery Operated Systems  
D Solid-State Relays  
TO-226AA  
(TO-92)  
TO-92S  
(Copper Lead Frame)  
Device Marking  
Front View  
Device Marking  
Front View  
TN0201L  
1
1
2
3
S
G
D
S
G
D
“S” TN  
0201L  
xxyy  
VN0300LS  
“S” VN  
0300LS  
xxyy  
2
TN0401L  
“S” = Siliconix Logo  
xxyy = Date Code  
“S” TN  
0401L  
xxyy  
3
“S” = Siliconix Logo  
xxyy = Date Code  
Top View  
Top View  
VN0300L  
“S” VN  
0300L  
xxyy  
TN0201L  
TN0401L  
VN0300L  
VN0300LS  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
TN0201L  
TN0401L  
VN0300L VN0300LS  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
20  
"20  
0.64  
0.38  
1.5  
40  
"20  
0.64  
0.38  
1.5  
30  
"30  
0.64  
0.38  
3
30  
"30  
0.67  
0.43  
3
DS  
GS  
V
T = 25_C  
A
A
Continuous Drain Current  
I
D
(T = 150_C)  
Pulsed Drain Current  
J
T = 100_C  
A
a
I
DM  
T = 25_C  
A
0.8  
0.8  
0.8  
0.9  
A
Power Dissipation  
P
W
D
T = 100_C  
0.32  
156  
0.32  
156  
0.32  
156  
0.4  
Thermal Resistance, Junction-to-Ambient  
R
thJA  
156  
_C/W  
_C  
Operating Junction and Storage Temperature Range  
T , T  
J
–55 to 150  
stg  
Notes  
a. Pulse width limited by maximum junction temperature.  
Document Number: 70199  
S-04279—Rev. E, 16-Jul-01  
www.vishay.com  
11-1  
TN0201L/0401L, VN0300L/LS  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Limits  
TN0201L  
TN0401L  
VN0300L  
VN0300LS  
Parameter  
Symbol  
Test Conditions  
Typa Min  
Max  
Min  
Max Unit  
Static  
TN0201L  
TN0401L  
55  
55  
20  
V
= 0 V  
= 10 mA  
GS  
40  
Drain-Source Breakdown Voltage  
V
(BR)DSS  
I
D
30  
V
V
= V , I = 0.25 mA  
1.4  
1.5  
0.5  
2
DS  
GS D  
Gate-Threshold Voltage  
Gate-Body Leakage  
V
GS(th)  
V
= V , I = 1 mA  
0.8  
2.5  
DS  
GS D  
V
V
= 0 V, V = "20 V  
"10  
DS  
DS  
GS  
I
nA  
GSS  
= 0 V, V = "30 V  
"100  
GS  
V
= 30 V, V = 0 V  
GS  
10  
DS  
T
J
= 125_C  
500  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
= 0.8 x V , V = 0 V  
(BR)DSS GS  
1
DS  
T
J
= 125_C  
100  
V
= 10 V, V = 4.5 V  
0.9  
3.5  
1.8  
1.2  
1.4  
2.6  
0.85  
1.6  
500  
0.25  
1
DS  
GS  
b
On-State Drain Current  
I
A
D(on)  
V
= 10 V, V = 10 V  
1
DS  
GS  
V
V
= 3.5 V, I = 0.05 A  
4
GS  
D
V
= 5 V, I = 0.3 A  
3.3  
GS  
D
= 4.5 V, I = 0.25 A  
D
2
4
GS  
b
Drain-Source On-Resistance  
r
W
DS(on)  
T
J
= 125_C  
= 125_C  
V
= 10 V, I = 1 A  
1.2  
1.2  
2.4  
mS  
GS  
D
T
J
b
Forward Transconductance  
g
fs  
V
= 10 V, I = 0.5 A  
200  
200  
DS  
D
Dynamic  
Input Capacitance  
C
C
38  
33  
8
60  
50  
15  
100  
iss  
Output Capacitance  
95  
25  
V
= 15 V, V = 0 V, f = 1 MHz  
pF  
oss  
DS  
GS  
Reverse Transfer Capacitance  
C
rss  
Switchingc  
Turn-On Time  
Turn-Off Time  
t
10  
13  
30  
30  
30  
30  
V
D
= 15 V, R = 14 W  
L
ON  
DD  
ns  
I
^ 1 A, V  
= 10 V  
GEN  
t
OFF  
R = 25 W  
G
Notes  
a. For DESIGN AID ONLY, not subject to production testing..  
VNDQ03  
b. Pulse test: PW v300 ms duty cycle v2%.  
c. Switching time is essentially independent of operating temperature.  
Document Number: 70199  
S-04279—Rev. E, 16-Jul-01  
www.vishay.com  
11-2  
TN0201L/0401L, VN0300L/LS  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Ohmic Region Characteristics  
Output Characteristics for Low Gate Drive  
2.0  
1.6  
1.2  
0.8  
0.4  
0
200  
160  
120  
80  
10 V  
7 V  
VGS = 10 V  
6 V  
2.9 V  
2.7 V  
5 V  
4 V  
2.5 V  
2.3 V  
40  
2.1 V  
1.7 V  
3 V  
2 V  
0
0
1
2
3
4
5
0
0.4  
0.8  
1.2  
1.6  
2.0  
VDS – Drain-to-Source Voltage (V)  
VDS – Drain-to-Source Voltage (V)  
Transfer Characteristics  
On-Resistance vs. Gate-to-Source Voltage  
500  
400  
300  
200  
100  
0
TJ = –55_C  
3
2
1
0
I
= 0.2 A  
0.5 A  
125_C  
D
V
= 15 V  
DS  
1.0 A  
25_C  
0
4
8
12  
16  
20  
0
1
2
3
4
5
VGS – Gate-Source Voltage (V)  
VGS – Gate-Source Voltage (V)  
Normalized On-Resistance  
vs. Junction Temperature  
On-Resistance vs. Drain Current  
2.5  
2.25  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
VGS = 10 V  
2.0  
1.5  
1.0  
0.5  
0
VGS = 4.5 V  
I
= 0.5 A  
D
6 V  
0.1 A  
10 V  
0.50  
0
1
2
3
–50  
–10  
30  
70  
110  
150  
ID – Drain Current (A)  
TJ – Junction Temperature (_C)  
Document Number: 70199  
S-04279—Rev. E, 16-Jul-01  
www.vishay.com  
11-3  
TN0201L/0401L, VN0300L/LS  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Threshold Region  
Capacitance  
10  
120  
100  
80  
60  
40  
20  
0
V
= 10 V  
DS  
V
= 0 V  
GS  
f = MHz  
T
J
= 150_C  
1
100_C  
25_C  
0.1  
C
iss  
C
oss  
C
rss  
–55_C  
0.01  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
0
10  
20  
30  
40  
50  
VGS – Gate-to-Source Voltage (V)  
VDS – Drain-to-Source Voltage (V)  
Gate Charge  
Load Condition Effects on Switching  
6
5
4
3
2
1
0
100  
10  
1
VDD = 25 V  
G = 25 W  
VGS = 0 to 10 V  
I
= 1 A  
D
R
V
= 15 V  
DS  
td(off)  
td(on)  
24 V  
t
f
t
r
0.1  
1
10  
0
80  
160  
240  
320  
400  
Qg – Total Gate Charge (pC)  
ID – Drain Current (A)  
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)  
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
0.05  
0.02  
P
DM  
0.1  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 156_C/W  
thJA  
(t)  
Z
0.01  
3. T – T = P  
JM  
A
DM thJA  
Single Pulse  
0.5  
0.01  
0.1  
1
5
10  
50  
100  
500  
1 K  
5 K  
10 K  
t
1
– Square Wave Pulse Duration (sec)  
Document Number: 70199  
S-04279—Rev. E, 16-Jul-01  
www.vishay.com  
11-4  

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