VN10LLS [VISHAY]
N-Channel 60-V (D-S) MOSFETs; N通道60 -V （D -S ）的MOSFET
| 型号： | VN10LLS |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 60-V (D-S) MOSFETs |
| 文件： | 总4页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VN10LLS, VN0605T, VN0610LL, VN2222LL
Vishay Siliconix
N-Channel 60-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
V(BR)DSS Min (V)
rDS(on) Max (W)
VGS(th) (V)
ID Min (A)
VN10LLS
VN0605T
VN0610LL
VN2222LL
5 @ V = 10 V
0.8 to 2.5
0.8 to 3.0
0.8 to 2.5
0.6 to 2.5
0.32
0.18
0.28
0.23
GS
5 @ V = 10 V
GS
60
5 @ V = 10 V
GS
5 @ V = 10 V
GS
FEATURES
BENEFITS
APPLICATIONS
D Low On-Resistance: 2.5 W
D Low Threshold: <2.1 V
D Low Offset Voltage
D Direct Logic-Level Interface: TTL/CMOS
D Solid State Relays
D Low-Voltage Operation
D Low Input Capacitance: 22 pF D Easily Driven Without Buffering
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Fast Switching Speed: 7 ns
D High-Speed Circuits
D Low Error Voltage
D Low Input and Output
Leakage
TO-226AA
(TO-92)
TO-92S
TO-236
(SOT-23)
Front View
VN0610LL
1
Front View
VN10LLS
VN0605T
S
1
2
S
G
D
“S” VN0
610LL
xxyy
V2wll
2
3
G
D
G
S
1
2
“S” VN
10LLS
xxyy
3
D
VN2222LL
3
V2 = Part Number Code
for VN0605T
w = Week Code
“S” = Siliconix Logo
xxyy = Date Code
Top View
VN10LLS
“S” VN2
222LL
xxyy
Top View
VN0610LL
VN2222LL
ll = Lot Traceability
Top View
VN0605T
“S” = Siliconix Logo
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
VN10LLS
VN0605T
VN0610LL
VN2222LL
Unit
Drain-Source Voltage
V
60
"30
"20
0.32
0.2
60
60
60
DS
b
Gate-Source Voltage—Non-Repetitive
Gate-Source Voltage—Continuous
V
"30
"20
0.18
0.11
0.72
0.36
0.14
350
"30
"20
0.28
0.17
1.3
"30
"20
0.23
0.14
1.0
V
GSM
V
GS
T = 25_C
A
Continuous Drain Current
I
D
(T = 150_C)
J
T = 100_C
A
A
a
Pulsed Drain Current
I
1.4
DM
T = 25_C
0.9
0.8
0.8
A
Power Dissipation
P
W
D
T = 100_C
0.4
0.32
156
0.32
156
A
Thermal Resistance, Junction-to-Ambient
R
thJA
139
_C/W
_C
Operating Junction and
Storage Temperature Range
T , T
–55 to 150
J
stg
Notes
a. Pulse width limited by maximum junction temperature.
b.
t v 50 ms.
p
Document Number: 70212
S-04279—Rev. G, 16-Jul-01
www.vishay.com
11-1
VN10LLS, VN0605T, VN0610LL, VN2222LL
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
VN10LLS
VN0610LL
VN0605T
VN2222LL
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Min Max Unit
Static
V
= 0 V, I = 100 mA
70
70
60
60
GS
D
Drain-Source
Breakdown Voltage
V
(BR)DSS
V
= 0 V, I = 10 mA
60
GS
DS
D
V
Gate-Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 1 mA
2.1
0.8
2.5
0.8
0.6
2.5
3.0
GS(th)
GS D
V
= 0 V, V = "20 V
"100
"500
"100
DS
GS
T =125_C
J
I
nA
GSS
V
= 0 V, V = "30 V
"100
10
DS
GS
V
= 50 V, V = 0 V
1.0
DS
GS
T = 125_C
= 48 V, V = 0 V
500
500
J
Zero Gate-Voltage
Drain Current
I
mA
DSS
V
10
DS
GS
T = 125_C
J
500
b
On-State Drain Current
I
V
= 10 V, V = 10 V
1000
4.5
750
500
750
mA
D(on)
DS
GS
V
= 4.5 V, I = 50 mA
7.5
GS
D
V
= 5 V, I = 0.2 A
4.5
7.5
5
7.5
7.5
GS
D
Drain-Source
On-Resistance
r
W
DS(on)
b
V
= 10 V, I = 0.5 A
2.4
5
GS
D
T = 125_C
J
4.4
9
10
13.5
V
= 10 V, I = 0.5 A
230
180
100
100
DS
D
Forward
Transconductance
g
fs
mS
b
V
= 10 V, I = 0.2 A
80
DS
D
Common Source
Output Conductance
g
os
V
= 5 V, I = 50 mA
DS D
500
ms
b
Dynamic
Input Capacitance
Output Capacitance
C
C
22
11
60
25
60
25
60
25
iss
V
=25 V, V = 0 V
GS
f = 1 MHz
oss
DS
pF
Reverse Transfer
Capacitance
C
rss
2
5
5
5
Switchingc
Turn-On Time
Turn-Off Time
Turn-On Time
Turn-Off Time
t
7
7
10
10
10
10
ON
V
= 15 V, R = 23 W, I ^ 0.6 A
L D
DD
V
= 10 V, R = 25 W
GEN
G
t
OFF
ns
t
7
20
20
ON
V
= 30 V, R = 150 W, I ^ 0.2 A
L D
DD
V
= 10 V, R = 25 W
GEN
G
t
11
OFF
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
VNBF06
c. Switching time is essentially independent of operating temperature.
Document Number: 70212
S-04279—Rev. G, 16-Jul-01
www.vishay.com
11-2
VN10LLS, VN0605T, VN0610LL, VN2222LL
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Output Characteristics
Transfer Characteristics
1.0
1.0
0.8
0.6
0.4
0.2
0.0
6.5 V
6 V
VGS = 10, 9, 8, 7 V
0.8
0.6
0.4
0.2
0.0
T = –55_C
J
5.5 V
25_C
5 V
4.5 V
4 V
125_C
3.5 V
3 V
2.5 V
2, 1 V
6
0
1
2
3
4
5
0
1
2
3
4
5
6
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
7
6
5
4
3
2
1
0
60
VGS = 0 V
f = 1 MHz
TJ = 25_C
50
40
30
20
10
0
rDS @ 5 V = VGS
Ciss
rDS @ 10 V = VGS
Coss
Crss
0.0
0.2
0.4
0.6
0.8
1.0
0
5
10
15
20
25
30
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
20
2.0
1.5
1.0
0.5
0.0
VDS = 30 V
ID = 0.5 A
V
= 10 V, rDS @ 0.5 A
16
12
8
GS
V
= 5 V, r @ 0.05 A
DS
GS
4
0
0
400
800
1200
1600
2000
2400
–55 –30
–5
20
45
70
95
120 145
Qg – Total Gate Charge (pC)
TJ – Junction Temperature (_C)
Document Number: 70212
S-04279—Rev. G, 16-Jul-01
www.vishay.com
11-3
VN10LLS, VN0605T, VN0610LL, VN2222LL
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.000
0.100
0.010
0.001
6
5
4
3
2
1
0
ID = 50 mA
500 mA
TJ = 125_C
TJ = 25_C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10 12 14 16 18 20
VSD – Source-to-Drain Voltage (V)
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
0.50
0.25
ID = 250 mA
–0.00
–0.25
–0.50
–0.75
–50 –25
0
25
50
75
100 125 150
TJ – Junction Temperature (_C)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
0.02
P
DM
0.1
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.01
2. Per Unit Base = R
= 156_C/W
thJA
(t)
Z
3. T – T = P
JM
A
DM thJA
Single Pulse
0.01
0.1
1
10
100
1 K
10 K
t
1
– Square Wave Pulse Duration (sec)
Document Number: 70212
S-04279—Rev. G, 16-Jul-01
www.vishay.com
11-4
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