VN2222LM [VISHAY]
N-Channel Enhancement-Mode MOSFET Transistors; N沟道增强型MOSFET晶体管
| 型号： | VN2222LM |
| 厂家： | 
VISHAY |
| 描述： | N-Channel Enhancement-Mode MOSFET Transistors |
| 文件： | 总5页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VN10/0605/0610/2222 Series
N-Channel Enhancement-Mode MOSFET Transistors
VN10LE
VN10LM
VN0605T
VN0610LL VN2222LM
VN2222LL
Product Summary
Part Number
V(BR)DSS Min (V)
rDS(on) Max (W)
VGS(th) (V)
ID Min (A)
VN10LE
VN10LM
5 @ V = 10 V
0.8 to 2.5
0.8 to 2.5
0.8 to 3.0
0.8 to 2.5
0.6 to 2.5
0.6 to 2.5
0.38
0.32
0.18
0.28
0.23
0.26
GS
5 @ V = 10 V
GS
VN0605T
VN0610LL
VN2222LL
VN2222LM
5 @ V = 10 V
GS
60
5 @ V = 10 V
GS
7.5 @ V = 5 V
GS
7.5 @ V = 5 V
GS
Features
Benefits
Applications
D Low On-Resistance: 2.5 W
D Low Offset Voltage
D Direct Logic-Level Interface: TTL/CMOS
D Low Threshold: <2.1 V
D Low-Voltage Operation
D Solid State Relays
D Low Input Capacitance: 22 pF D Easily Driven Without Buffering D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Fast Switching Speed: 7 ns
D High-Speed Circuits
D Low Input and Output Leakage D Low Error Voltage
TO-206AC
(TO-52)
TO-226AA
(TO-92)
TO-237
(Tab Drain)
TO-236
(SOT-23)
S
1
1
S
G
D
S
G
D
G
S
1
1
2
3
D
2
2
2
3
3
3
G
D
Top View
VN0605T (V2)*
*Marking Code for TO-236
Top View
VN10LE
Top View
Top View
VN0610LL
VN2222LL
VN10LM
VN2222LM
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70212.
Siliconix
1
S-52429—Rev. E, 28-Apr-97
VN10/0605/0610/2222 Series
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
b
Parameter
Symbol VN10LE
VN0605T VN0610LL VN2222LL VN2222LM Unit
VN10LM
Drain-Source Voltage
V
60
60
"30
"20
0.32
0.2
60
60
60
60
"30
"20
0.26
0.16
1.0
DS
c
Gate-Source Voltage—Non-Repetitive
Gate-Source Voltage—Continuous
V
"30
"20
0.18
0.11
0.72
0.36
0.14
"30
"20
0.28
0.17
1.3
"30
"20
0.23
0.14
1.0
V
GSM
V
"20
0.38
0.24
1.0
GS
T = 25_C
A
Continuous Drain Current
I
D
(T = 150_C)
J
T = 100_C
A
A
a
Pulsed Drain Current
I
DM
1.4
T = 25_C
1.5
1.0
0.8
0.8
1.0
A
Power Dissipation
P
W
D
T = 100_C
0.6
0.4
0.32
0.32
0.4
A
_C/
Maximum Junction-to-Ambient
R
thJA
400
125
350
156
156
125
W
Operating Junction and
Storage Temperature Range
T , T
–55 to 150
_C
J
stg
Notes
a. Pulse width limited by maximum junction temperature.
b. Reference case for all temperature testing.
c. t v 50 ms.
p
Specificationsa
Limits
VN10LE
VN10LM
VN0610LL
VN2222LL
VN2222LM
VN0605T
Parameter
Static
Symbol
Test Conditions
Typb Min Max Min Max Min Max Unit
V
V
= 0 V, I = 100 mA
70
70
60
60
GS
D
Drain-Source
Breakdown Voltage
V
(BR)DSS
V
= 0 V, I = 10 mA
60
GS
DS
D
V
Gate-Threshold Voltage
Gate-Body Leakage
V
= V , I = 1 mA
2.1
0.8
2.5
0.8
3.0
0.6
2.5
GS(th)
GS
D
e
V
= 0 V, V = "20 V
"100
"100
"500
"100
DS
GS
T =125_C
I
nA
J
GSS
V
= 0 V, V = "30 V
"100
10
DS
GS
V
= 50 V, V = 0 V
1.0
DS
GS
T = 125_C
500
500
J
Zero Gate-Voltage
Drain Current
I
mA
mA
W
DSS
V
= 48 V, V = 0 V
10
DS
GS
T = 125_C
500
J
c
On-State Drain Current
I
V
= 10 V, V = 10 V
1000
4.5
750
100
500
750
100
D(on)
DS
GS
GS
V
= 4.5 V, I = 50 mA
7.5
D
V
= 5 V, I = 0.2 A
4.5
7.5
5
7.5
7.5
GS
D
Drain-Source
On-Resistance
r
DS(on)
c
V
= 10 V, I = 0.5 A
2.4
5
GS
D
T = 125_C
4.4
9
10
13.5
J
V
= 10 V, I = 0.5 A
230
180
DS
DS
D
Forward
Transconductance
g
mS
fs
c
V
= 10 V, I = 0.2 A
80
D
Common Source
Output Conductance
g
V
= 5 V, I = 50 mA
500
ms
os
DS
D
c
2
Siliconix
S-52429—Rev. E, 28-Apr-97
VN10/0605/0610/2222 Series
Specificationsa
Limits
VN10LE
VN10LM
VN0610LL
VN2222LL
VN2222LM
VN0605T
Parameter
Dynamic
Symbol
Test Conditions
Typb Min Max Min Max Min Max Unit
Input Capacitance
Output Capacitance
C
C
22
11
60
25
60
25
60
25
iss
V
=25 V, V = 0 V
f = 1 MHz
oss
DS
GS
pF
Reverse Transfer
Capacitance
C
rss
2
5
5
5
Switchingd
V
= 15 V, R = 23 W
L
^ 0.6 A
Turn-On Time
Turn-Off Time
Turn-On Time
Turn-Off Time
Notes
t
7
7
10
10
10
10
DD
ON
I
= 10 V, R = 25 W
D
V
GEN
t
G
OFF
ns
V
DD
= 30 V, R = 150 W
L
t
7
20
20
ON
I
= 10 V, R = 25 W
^ 0.2 A
D
V
GEN
t
11
OFF
G
a.
T
= 25_C unless otherwise noted.
VNBF06
A
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. Pulse test: PW v300 ms duty cycle v3%.
d. Switching time is essentially independent of operating temperature.
e. VN10LE only.
Typical Characteristics (25_C Unless Otherwise Noted)
Output Characteristics
Transfer Characteristics
1.0
1.0
0.8
0.6
0.4
0.2
0
6.5 V
6 V
V
= 10, 9, 8, 7 V
GS
0.8
0.6
0.4
0.2
0
T
= –55_C
A
5.5 V
25_C
5 V
125_C
4.5 V
4 V
3.5 V
3 V 2.5 V
2, 1 V
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
V
– Drain-to-Source Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
DS
Siliconix
S-52429—Rev. E, 28-Apr-97
3
VN10/0605/0610/2222 Series
Typical Characteristics (25_C Unless Otherwise Noted)
On-Resistance vs. Drain Current
Capacitance
7
6
5
4
3
2
1
0
60
50
40
30
20
10
0
V
= 0 V
GS
T = 25_C
J
f = 1 MHz
r
DS
@ 5 V = V
GS
C
iss
r
DS
@ 10 V = V
GS
C
oss
C
rss
0
0.2
0.4
0.6
0.8
1.0
0
5
10
15
20
25
30
35
I
D
– Drain Current (A)
V
– Drain-to-Source Voltage (V)
DS
Gate Charge
On-Resistance vs. Junction Temperature
20
16
12
8
2.0
1.5
1.0
0.5
0
V
= 30 V
= 0.5 A
DS
I
D
V
= 10 V, r @ 0.5 A
DS
GS
V
= 5 V, r @ 0.05 A
DS
GS
4
0
0
400
800
1200
1600
2000
2400
–55 –30 –5
20
45
70
95 120 145
Q
– Total Gate Charge (pC)
TJ – Junction Temperature (_C)
g
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.000
0.100
0.010
0.001
6
5
4
3
2
1
0
r
= 50 mA
DS
T = 125_C
J
500 mA
T = 25_C
J
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10 12 14 16 18 20
V
– Source-to-Drain Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
SD
4
Siliconix
S-52429—Rev. E, 28-Apr-97
VN10/0605/0610/2222 Series
Typical Characteristics (25_C Unless Otherwise Noted)
Threshold Voltage
0.50
I
= 250 mA
D
0.25
–0.00
–0.25
–0.50
–0.75
–50 –25
0
25
50
75 100 125 150
T – Temperature (_C)
J
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.05
0.02
P
0.1
DM
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
0.01
2. Per Unit Base = R
= 156_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
Single Pulse
0.01
0.1
1
10
100
1 K
10 K
t – Square Wave Pulse Duration (sec)
1
Siliconix
S-52429—Rev. E, 28-Apr-97
5
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