VO4257H-007T [VISHAY]
Triac Output Optocoupler, 1-Element, 5300V Isolation;
| 型号： | VO4257H-007T |
| 厂家： | 
VISHAY |
| 描述： | Triac Output Optocoupler, 1-Element, 5300V Isolation 三端双向交流开关 输出元件 光电 |
| 文件： | 总9页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VO4257/VO4258
Vishay Semiconductors
Optocoupler, Phototriac Output, High dV/dt, Low Input Current
Features
• High static dV/dt 5 kV/µs
• High input sensitivity I = 1.6, 2.0
MT2
FT
1
6
5
4
A
and 3.0 mA
e3
NC
2
3
C
• 700 and 800 V blocking voltage
• 300 mA on-state current
MT1
NC
• Isolation Test Voltage 5300 V
RMS
i179035
Agency Approvals
Order Information
• UL1577, File No. E52744 System Code H or J,
Double Protection
• CUL - File No. E52744, equivalent to CSA
bulletin 5A
Part
Remarks
VO4257D
700 V VDRM, Ift = 1.6 mA, DIP-6
700 V VDRM, Ift = 1.6 mA, DIP-6 400 mil
700 V VDRM, Ift = 1.6 mA, SMD-6
700 V VDRM, Ift = 2.0 mA, DIP-6
700 V VDRM, Ift = 2.0 mA, DIP-6 400 mil
700 V VDRM, Ift = 2.0 mA, SMD-6
700 V VDRM, Ift = 3.0 mA, DIP-6
700 V VDRM, Ift = 3.0 mA, DIP-6 400 mil
700 V VDRM, Ift = 3.0 mA, SMD-6
800 V VDRM, Ift = 1.6 mA, DIP-6
800 V VDRM, Ift = 1.6 mA, DIP-6 400 mil
800 V VDRM, Ift = 1.6 mA, SMD-6
800 V VDRM, Ift = 2.0 mA, DIP-6
800 V VDRM, Ift = 2.0 mA, DIP-6 400 mil
800 V VDRM, Ift = 2.0 mA, SMD-6
800 V VDRM, Ift = 3.0 mA, DIP-6
800 V VDRM, Ift = 3.0 mA, DIP-6 400 mil
800 V VDRM, Ift = 3.0 mA, SMD-6
VO4257D-X006
VO4257D-X007
VO4257H
• DIN EN 60747-5-2 (VDE 0884)
Available with Option 1
VO4257H-X006
VO4257H-X007
VO4257M
Applications
• Solid-state relays
• Industrial controls
• Office equipment
• Consumer appliances
VO4257M-X006
VO4257M-X007
VO4258D
VO4258D-X006
VO4258D-X007
VO4258H
Description
The VO4257/VO4258 phototriac consists of a GaAs
IRLED optically coupled to a photosensitive non-zero
crossing TRIAC packaged in a DIP-6 package.
High input sensitivity is achieved by using an emitter
follower phototransistor and a cascaded SCR pre-
driver resulting in an LED trigger current of 1.6 mA for
bin D, 2.0 mA for bin H, and 3.0 mA for bin M.
VO4258H-X006
VO4258H-X007
VO4258M
VO4258M-X006
VO4258M-X007
For additional information on the available options refer to Option
Information.
The new non zero phototriac family use a proprietary
dV/dt clamp resulting in a static dV/dt of greater than
5 kV/µs.
The VO4257/VO4258 phototriac isolates low-voltage
logic from 120, 240, and 380 VAC lines to control
resistive, inductive, or capacitive loads including
motors, solenoids, high current thyristors or TRIAC
and relays.
Document Number 84635
Rev. 1.3, 08-Feb-06
www.vishay.com
1
VO4257/VO4258
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
VR
Value
6.0
Unit
V
Reverse voltage
Forward current
IF
60
mA
Derate from 25 °C
1.33
mW/°C
Output
Parameter
Test condition
Part
Symbol
VDRM
Value
700
Unit
Peak off-state voltage
VO4257D/H/M
V
V
VO4258D/H/M
VDRM
ITM
800
300
6.6
RMS on-state current
Derate from 25 °C
mA
mW/°C
Coupler
Parameter
Isolation test voltage 1)
Test condition
t = 1.0 sec.
Symbol
VISO
Value
5300
Unit
VRMS
°C
Storage temperature range
Tstg
Tamb
Tsld
- 55 to + 150
- 55 to + 100
260
Ambient temperature range
Soldering temperature
°C
max. ≤ 10 sec. dip soldering
≥ 0.5 mm from case bottom
°C
1) between emitter and detector, climate per DIN 50014, part 2, Nov. 74
350
300
250
IF = 3 mA to 10 mA
200
150
100
50
0
- 40 - 20
0
20
40 60
80 100
19623
Temperature (°C)
Figure 1. Recommended Operating Condition
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Document Number 84635
Rev. 1.3, 08-Feb-06
2
VO4257/VO4258
Vishay Semiconductors
Thermal Characteristics
The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the tem-
peratures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB,
layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal Characteristics
of Optocouplers Application note.
Parameter
Test condition
Symbol
Pdiss
Value
100
Unit
mW
LED Power dissipation
Output Power dissipation
Total Power dissipation
at 25 °C
at 25 °C
at 25 °C
Pdiss
Ptot
500
600
125
125
150
139
78
mW
mW
Maximum LED junction temperature
Tjmax
Tjmax
θJEB
θJEC
θJDB
θJDC
θJED
θCA
°C
Maximum output die junction temperature
Thermal resistance, Junction Emitter to Board
Thermal resistance, Junction Emitter to Case
Thermal resistance, Junction Detector to Board
Thermal resistance, Junction Detector to Case
Thermal resistance, Junction Emitter to Junction Detector
Thermal resistance, Case to Ambient
°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
103
496
3563
TA
θ
CA
Package
TC
θ
EC
θ
DC
θ
TJE
TJD
DE
θ
DB
θ
EB
TB
θ
BA
19996
TA
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
IF = 10 mA
R = 6.0 V
VF = 0 V, f = 1.0 MHz
Symbol
VF
Min
Typ.
1.2
Max
1.4
Unit
V
Forward voltage
Reverse current
V
IR
0.1
40
10
µA
pF
Input capacitance
CI
Document Number 84635
Rev. 1.3, 08-Feb-06
www.vishay.com
3
VO4257/VO4258
Vishay Semiconductors
Output
Parameter
Test condition
Part
Symbol
VDRM
Min
700
Typ.
Max
Unit
V
Repetitive peak off-state voltage IDRM = 100 µs
VO4257D/H/M
VO4258D/H/M
VDRM
IDRM
VTM
800
V
µA
V
Off-state current
On-state voltage
On-current
V
D = VDRM,
100
3.0
IT = 300 mA
PF = 1.0, VT(RMS) = 1.7 V
ITM
300
mA
V/µs
Critical state of rise off-state
voltage
V
D = 0.67 VDRM, TJ = 25 °C
dV/dtcr
5000
Coupler
Parameter
Test condition
Part
Symbol
IFT
Min
Typ.
Max
1.6
Unit
mA
LED trigger current, current
required to latch output
VD = 3 V
VO4257D
VO4257H
VO4257M
VO4258D
VO4258H
VO4258M
CIO
IFT
IFT
IFT
IFT
IFT
CIO
2.0
3.0
1.6
2.0
3.0
mA
mA
mA
mA
mA
pF
Capacitance (input-output)
f = 1.0 MHz, VIO = 0 V
0.8
Safety and Insulation Ratings
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Climatic Classification (according to IEC 68 part 1)
Polution Degree (DIN VDE 0109)
55/100/21
2.0
Comparative tracking index per DIN IEC 112/VDE
0303 part 1, group IIIa per DIN VDE 6110 175 399
175
399
VIOTM
VIORM
PSO
ISI
VIOTM
VIORM
PSO
ISI
8000
890
V
V
500
250
175
mW
mA
°C
TSI
TSI
Creepage
Clearance
7.0
7.0
mm
mm
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4
Document Number 84635
Rev. 1.3, 08-Feb-06
VO4257/VO4258
Vishay Semiconductors
1000
100
10
1.6
1.4
1.2
0 °C
0 °C
25 °C
25 °C
1.0
50 °C
IF = 2 mA
85 °C
1
0.8
1
2
3
4
0.1
1
10
100
VTM, On-State Voltage (V)
19528
19521
IF (mA)
Figure 2. Diode Forward Voltage vs. Forward Current
Figure 5. Output On Current (ITM) vs. Voltage
42
40
38
36
100
90
80
70
60
50
85 °C
40
30
20
IR = 10 µA
34
32
25 °C
10
0
0 °C
- 60 - 40 - 20
0
20 40 60 80 100
0
200
400
600
800
19527
Temperature (°C)
20007
Voltage (V)
Figure 3. Diode Reverse Voltage vs. Temperature
Figure 6. Output Off Current (Leakage) vs. Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1000
IDRM at 830 V
100
10
1
0.4
Normalized IFT
0.2
0.0
at 25 ºC
- 60 - 40 - 20
0
20 40 60 80 100
- 60 - 40 - 20
0
20 40 60 80 100
19529
Temperature (ºC)
TA, Ambient Temperature (°C)
19999
Figure 4. Leakage Current vs. Ambient Temperature
Figure 7. Normalize Trigger Input Current vs. Temperature
Document Number 84635
Rev. 1.3, 08-Feb-06
www.vishay.com
5
VO4257/VO4258
Vishay Semiconductors
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
100
1000
19626
Turn-on time (µs)
Figure 8. Trigger Current vs. Turn On Time
1.8
Normalized IH
at 25 °C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
- 60 - 40 - 20
0
20 40 60 80 100
Temperature (ºC)
20000
Figure 9. Normalized Holding Current vs. Temperature
16
14
12
10
85 ºC
8
100 ºC
6
4
- 40 ºC
2
25 ºC
0
10
20
30
40
50
60
70
Trigger pulse width (µs)
20006
Figure 10. IFT vs. LED Pulse Width
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Document Number 84635
Rev. 1.3, 08-Feb-06
6
VO4257/VO4258
Vishay Semiconductors
Package Dimensions in Inches (mm)
pin one ID
3
2
1
.248 (6.30)
.256 (6.50)
ISO Method A
4
6
5
.335 (8.50)
.343 (8.70)
.300 (7.62)
typ.
.048 (1.22)
.052 (1.32)
.039
(1.00)
Min.
.130 (3.30)
.150 (3.81)
4°
typ .
18°
.130 (3.30)
.150 (3.81)
.033 (0.84) typ.
3°–9°
.008 (.20)
.012 (.30)
.018 (0.46)
.020 (0.51)
.033 (0.84) typ.
.100 (2.54) typ
.300–.347
(7.62–8.81)
i178014
Option 7
Option 6
.300 (7.62)
TYP.
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1)
.315 (8.0)
MIN.
.014 (0.35)
.010 (0.25)
.331 (8.4)
MIN.
.400 (10.16)
.430 (10.92)
.406 (10.3)
MAX.
18450-1
Document Number 84635
Rev. 1.3, 08-Feb-06
www.vishay.com
7
VO4257/VO4258
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
8
Document Number 84635
Rev. 1.3, 08-Feb-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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