VQ1006P [VISHAY]
N-Channel 80- and 90-V (D-S) MOSFETs; N沟道80-和90 -V （D -S ）的MOSFET
| 型号： | VQ1006P |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 80- and 90-V (D-S) MOSFETs |
| 文件： | 总4页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VN0808L/LS, VQ1006P
Vishay Siliconix
N-Channel 80- and 90-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
V(BR)DSS Min (V) rDS(on) Max (W)
VGS(th) (V)
ID (A)
VN0808L
VN0808LS
VQ1006P
4 @ V = 10 V
GS
0.8 to 2
0.8 to 2
0.3
0.33
0.4
80
90
4 @ V = 10 V
GS
4 @ V = 10 V
GS
0.8 to 2.5
FEATURES
BENEFITS
APPLICATIONS
D Low On-Resistance: 3.6 W
D Low Threshold: 1.6 V
D Low Offset Voltage
D Direct Logic-Level Interface: TTL/CMOS
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Low Input Capacitance: 35 pF
D Fast Switching Speed: 6 ns
D Low Input and Output Leakage
D Battery Operated Systems
D Solid-State Relays
Dual-In-Line
TO-226AA
(TO-92)
TO-92S
D
S
D
S
1
4
1
2
3
4
5
6
7
14
13
12
11
10
9
1
2
3
S
G
D
1
2
3
S
G
D
N
N
1
4
G
1
G
4
NC
NC
G
2
S
2
D
2
G
3
3
S
N
N
Top View
Top View
VN0808L
VN0808LS
D
3
8
Front View:
VN0808LS
Front View:
VN0808L
Top View
“S” VN
0808LS
xxyy
Sidebraze: VQ1006P
“S” VN
0808L
xxyy
Top View:
VQ1006P
“S” = Siliconix Logo
f = Factory Code
ll = Lot Traceability
xxyy = Date Code
VQ1006P
“S”f//xxyy
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
VQ1006P
Single
Total Quad
Parameter
Symbol
VN0808L
80
VN0808LS
Unit
Drain-Source Voltage
V
80
"30
0.33
0.21
1.9
90
"20
0.4
0.23
2
DS
GS
V
Gate-Source Voltage
V
"30
0.3
T = 25_C
A
Continuous Drain Current
I
D
(T = 150_C)
0.19
1.9
J
T = 100_C
A
A
a
Pulsed Drain Current
I
DM
T = 25_C
0.8
0.9
1.3
0.52
96
2
A
Power Dissipation
P
W
D
T = 100_C
A
0.32
156
0.4
0.8
62.5
Thermal Resistance, Junction-to-Ambient
R
thJA
139
_C/W
_C
Operating Junction and Storage Temperature Range
T , T
J
–55 to 150
stg
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 70214
S-04279—Rev.D, 16-Jul-01
www.vishay.com
11-1
VN0808L/LS, VQ1006P
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
VN0808L/LS
VQ1006P
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V
V
= 0 V, I = 10 mA
125
1.6
80
90
(BR)DSS
GS
D
V
V
V
= V , I = 1 mA
0.8
2
0.8
2.5
GS(th)
DS
GS D
V
= 0 V, V = "15 V
"100
"100
"500
DS
GS
Gate-Body Leakage
I
nA
GSS
T = 125_C
J
V
= 80 V, V = 0 V
10
DS
DS
GS
T = 125_C
500
J
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 72 V, V = 0 V
1
GS
T = 125_C
J
500
b
On-State Drain Current
I
V
= 10 V, V = 10 V
1.8
3.8
1.5
1.5
A
D(on)
DS
GS
V
= 5 V, I = 0.3 A
D
5
GS
b
V
= 10 V, I = 1 A
D
3.6
4
8
4.5
8.6
Drain-Source On-Resistance
r
W
GS
DS(on)
T = 125_C
6.7
J
b
Forward Transconductance
g
fs
V
= 10 V, I = 0.5 A
350
0.23
170
170
DS
D
mS
pF
b
Common Source Output Conductance
g
os
V
= 10 V, I = 0.1 A
D
DS
Dynamic
Input Capacitance
C
C
35
15
2
50
40
10
60
50
10
iss
Output Capacitance
V
= 25 V, V = 0 V, f = 1 MHz
GS
oss
DS
Reverse Transfer Capacitance
C
rss
Switchingc
Turn-On Time
Turn-Off Time
t
6
8
10
10
10
10
V
= 25 V, R = 23 W
L
ON
DD
ns
I
D
^ 1 A, V
= 10 V
GEN
t
OFF
R
G
= 25 W
Notes
a. For DESIGN AID ONLY, not subject to production testing..
VNDQ09
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
Document Number: 70214
S-04279—Rev.D, 16-Jul-01
www.vishay.com
11-2
VN0808L/LS, VQ1006P
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Ohmic Region Characteristics
Output Characteristics for Low Gate Drive
1.0
0.8
0.6
0.4
0.2
0
100
80
60
40
20
0
VGS = 10 V
VGS = 3 V
2.8 V
6 V
5 V
2.6 V
4 V
2.4 V
2.2 V
3 V
2 V
2.0 V
1.8 V
0
1.0
2.0
3.0
4.0
5.0
0
0.4
0.8
1.2
1.6
2.0
VDS – Drain-to-Source Voltage (V)
VDS – Drain-to-Source Voltage (V)
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.5
0.4
0.3
0.2
0.1
0
7
6
5
4
3
2
1
0
125_C
25_C
TJ = –55_C
1.0 A
0.5 A
ID = 0.1 A
VDS = 15 V
0
2
4
6
8
10
0
4
8
12
16
20
VGS – Gate-Source Voltage (V)
VGS – Gate-Source Voltage (V)
Normalized On-Resistance
vs. Junction Temperature
On-Resistance vs. Drain Current
10
2.25
2.00
1.75
1.50
1.25
1.00
0.75
VGS = 10 V
8
6
4
2
0
VGS = 10 V
0.50
0
0.5
1.0
1.5
2.0
2.5
–50
–10
30
70
110
150
ID – Drain Current (A)
TJ – Junction Temperature (_C)
Document Number: 70214
S-04279—Rev.D, 16-Jul-01
www.vishay.com
11-3
VN0808L/LS, VQ1006P
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Threshold Region
Capacitance
10
125
100
75
V
= 0 V
GS
V
= 5 V
DS
f = 1 MHz
1
TJ = 150_C
50
C
iss
0.1
0.01
125_C
25_C
C
oss
25
C
–55_C
rss
0
0.5
1.0
1.5
2.0
0
10
20
30
40
50
VGS – Gate-to-Source Voltage (V)
VDS – Drain-to-Source Voltage (V)
Gate Charge
Load Condition Effects on Switching
15.0
12.5
10.0
7.5
5.0
2.5
0
100
VDD = 25 V
RL = 23 W
VGS = 0 to 10 V
ID = 1.0 A
I
= 1.0 A
D
V
= 45 V
DS
10
td(off)
72 V
t
r
td(on)
t
f
1
0
1
100
200
300
400
500
0.1
1
2
Qg – Total Gate Charge (pC)
ID – Drain Current (A)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
0.02
P
DM
0.1
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.01
2. Per Unit Base = R
= 156_C/W
thJA
(t)
Z
3. T – T = P
JM
A
DM thJA
Single Pulse
0.01
0.1
1
10
100
1 K
10 K
t
1
– Square Wave Pulse Duration (sec)
Document Number: 70214
S-04279—Rev.D, 16-Jul-01
www.vishay.com
11-4
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