VQ2001P-1 [VISHAY]

Power Field-Effect Transistor, 0.6A I(D), 30V, 2ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET;
VQ2001P-1
型号: VQ2001P-1
厂家: VISHAY TELEFUNKEN    VISHAY TELEFUNKEN
描述:

Power Field-Effect Transistor, 0.6A I(D), 30V, 2ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

脉冲 光电二极管 晶体管
文件: 总2页 (文件大小:48K)
下载:  下载PDF数据表文档文件

VQ2004J

Quad P-Channel 60-V (D-S) MOSFET

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14 VISHAY

VQ2004J

Quad P-Channel 60-V (D-S) MOSFET

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20 VISHAY

VQ2004J

Quad P-Channel 60-V (D-S) MOSFET

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4 VISHAY

VQ2004J-1

Power Field-Effect Transistor, 0.41A I(D), 60V, 5ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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0 VISHAY

VQ2004J-2

Power Field-Effect Transistor, 0.41A I(D), 60V, 5ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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0 VISHAY

VQ2004P

TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 60V V(BR)DSS | 410MA I(D) | DIP

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6 ETC

VQ2004P-1

Power Field-Effect Transistor, 0.41A I(D), 60V, 5ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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0 VISHAY

VQ2004P-2

Power Field-Effect Transistor, 0.41A I(D), 60V, 5ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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0 VISHAY

VQ2006J

TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 90V V(BR)DSS | 410MA I(D) | DIP

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15 ETC

VQ2006J-2

Power Field-Effect Transistor, 0.41A I(D), 90V, 5ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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0 VISHAY

VQ2006P

TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 90V V(BR)DSS | 410MA I(D) | DIP

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60 ETC

VQ2006P-1

Power Field-Effect Transistor, 0.41A I(D), 90V, 5ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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0 VISHAY

VQ2006P-2

Power Field-Effect Transistor, 0.41A I(D), 90V, 5ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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0 VISHAY

VQ2011C000J0G

Barrier Strip Terminal Block

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0 AMPHENOL

VQ2011C100J0G

Barrier Strip Terminal Block

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0 AMPHENOL