VS-10CWH02FN-M3 [VISHAY]
DIODE 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, Rectifier Diode;
| 型号： | VS-10CWH02FN-M3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, Rectifier Diode 快速软恢复高电源 软恢复二极管 超快速软恢复二极管 超快速软恢复高功率电源 |
| 文件： | 总7页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-10CWH02FN-M3
Vishay Semiconductors
www.vishay.com
Hyperfast Rectifier, 2 x 5 A FRED Pt®
FEATURES
• Hyperfast recovery time
Base
common
cathode
2
• 175 °C max. operating junction temperature
• Output rectification freewheeling
• Low forward voltage drop reduced Qrr and
soft recovery
• Low leakage current
2
1
3
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
TO-252AA (D-PAK)
Common
cathode
Anode
Anode
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRODUCT SUMMARY
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
Package
TO-252AA (D-PAK)
2 x 5 A
IF(AV)
VR
200 V
VF at IF
0.74 V
trr (typ.)
TJ max.
Diode variation
23 ns
175 °C
Common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VRRM
TEST CONDITIONS
VALUES
UNITS
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
200
10
V
IF(AV)
TC = 160 °C
TJ = 25 °C
A
IFSM
80
TJ, TStg
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
200
-
-
IF = 5 A
-
-
-
-
-
-
-
-
-
0.90
0.98
0.74
0.84
-
0.98
1.15
0.84
1.05
4
V
IF = 10 A
Forward voltage
VF
IF = 5 A, TJ = 150 °C
IF = 10 A, TJ = 150 °C
VR = VR rated
Reverse leakage current per leg
IR
TJ = 125 °C, VR = VR rated
TJ = 150 °C, VR = VR rated
VR = 600 V
-
40
μA
-
80
Junction capacitance per leg
Series inductance
CT
LS
17
8
-
pF
nH
Measured lead to lead 5 mm from package body
-
Revision: 04-Oct-16
Document Number: 93263
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10CWH02FN-M3
Vishay Semiconductors
www.vishay.com
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
23
21
26
2
MAX.
UNITS
-
-
-
-
-
-
-
27
-
Reverse recovery time
trr
ns
TJ = 125 °C
-
IF = 5 A
dIF/dt = 200 A/μs
TJ = 25 °C
-
Peak recovery current
IRRM
A
TJ = 125 °C
3.1
20
41
-
VR = 160 V
TJ = 25 °C
-
Reverse recovery charge
Qrr
nC
TJ = 125 °C
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction and storage
temperature range
TJ, TStg
-65
-
175
°C
per leg
-
-
2.7
1.35
0.3
3.2
1.6
Thermal resistance,
junction to case
RthJC
°C/W
per device
g
Approximate weight
Marking device
0.01
oz.
Case style TO-252AA (D-PAK)
10CWH02FN
100
100
10
T
= 175 °C
J
T
= 150 °C
J
TJ = 175 °C
10
1
T
= 125 °C
J
T
= 100 °C
J
0.1
T
= 75 °C
J
1
0.01
TJ = 125 °C
T
= 50 °C
J
T
= 25 °C
0.001
J
TJ = 25 °C
0.1
0.0001
50
100
150
200
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VR - Reverse Voltage (V)
VFM - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 04-Oct-16
Document Number: 93263
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10CWH02FN-M3
Vishay Semiconductors
www.vishay.com
100
10
0
50
100
150
200
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
D = 0.5
D = 02
1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
0.1
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
180
170
160
150
140
6
5.5
5
RMS Limit
4.5
4
DC
3.5
3
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
2.5
2
Square wave (D = 0.50)
rated VR applied
1.5
1
DC
3
see note (1)
0.5
0
0
1
2
3
4
5
6
7
8
0
1
2
4
5
6
7
8
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 04-Oct-16
Document Number: 93263
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10CWH02FN-M3
Vishay Semiconductors
www.vishay.com
40
35
30
70
60
50
40
30
20
10
0
5 A, TJ = 125 °C
25
20
15
10
5
5 A, TJ = 125 °C
5 A, TJ = 25 °C
5 A, TJ = 25 °C
0
100
1000
100
1000
dIFdt (A/μs)
dIFdt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 04-Oct-16
Document Number: 93263
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10CWH02FN-M3
Vishay Semiconductors
www.vishay.com
ORDERING INFORMATION TABLE
Device code
VS-
10
C
W
H
02
FN TRL -M3
1
2
3
4
5
6
7
8
9
1
-
-
-
Vishay Semiconductors product
Current rating (10 = 10 A)
Circuit configuration:
C = common cathode
Package identifier:
2
3
-
4
W = D-PAK
-
-
-
-
H = hyperfast recovery
Voltage rating (02 = 200 V)
FN = TO-252AA
5
6
7
8
None = tube
TR = tape and reel
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
Environmental digit:
9
-
-M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tube
13" diameter reel
VS-10CWH02FN-M3
VS-10CWH02FNTR-M3
VS-10CWH02FNTRL-M3
VS-10CWH02FNTRR-M3
75
3000
2000
3000
3000
2000
3000
3000
13" diameter reel
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95627
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?95176
www.vishay.com/doc?95033
www.vishay.com/doc?95376
Revision: 04-Oct-16
Document Number: 93263
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
D-PAK (TO-252AA) “M”
DIMENSIONS in millimeters and inches
(5)
(3)
A
Pad layout
C
A
E
0.265
MIN.
M
C A B
b3
0.010
c2
(6.74)
A
H
E1
L3 (3)
Ø 1
4
4
Ø 2
0.245
MIN.
B
Seating
plane
D1
(6.23)
D (5)
0.488 (12.40)
0.409 (10.40)
L4
M
1
3
3
2
1
2
0.089
MIN.
(2.28)
Detail “C”
(2) L5
A
0.06
MIN.
b
0.010
c
(1.524)
b2
C A B
e
2 x
0.093 (2.38)
0.085 (2.18)
Detail “C”
(L1)
Rotated 90 °CW
Scale: 20:1
H
C
Lead tip
(7)
C
Gauge
plane
Seating
plane
C
L2
A1
Ø
L
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
MIN. MAX.
0.090 BSC
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
2.18
-
MAX.
2.39
0.13
0.89
1.14
5.46
0.61
0.89
6.22
-
MAX.
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
-
MIN.
MAX.
A
A1
b
0.086
-
e
H
2.29 BSC
9.40
1.40
10.41
1.78
0.370
0.055
0.410
0.070
0.64
0.76
4.95
0.46
0.46
5.97
5.21
6.35
4.32
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.250
0.170
L
b2
b3
c
L1
L2
L3
L4
L5
Ø
2.74 BSC
0.51 BSC
0.108 REF.
0.020 BSC
3
0.89
1.27
1.02
1.52
10°
0.035
0.050
0.040
0.060
10°
3
2
c2
D
-
-
0.045
0°
5
3
5
3
1.14
0°
D1
E
6.73
-
0.265
-
Ø1
Ø2
0°
15°
0°
15°
E1
25°
35°
25°
35°
Notes
(1)
(2)
(3)
(4)
(5)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Lead dimension uncontrolled in L5
Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
Dimension b1 and c1 applied to base metal only
(6)
(7)
(8)
Datum A and B to be determined at datum plane H
Outline conforms to JEDEC® outline TO-252AA
Revision: 24-Jun-16
Document Number: 95627
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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