VS-110RKI120 [VISHAY]
Silicon Controlled Rectifier,;
| 型号： | VS-110RKI120 |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, |
| 文件： | 总8页 (文件大小：917K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-110RKI...PbF, VS-111RKI...PbF Series
www.vishay.com
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 110 A
FEATURES
• High current and high surge ratings
• Hermetic ceramic housing
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TO-209AC (TO-94)
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
PRODUCT SUMMARY
• AC controllers
IT(AV)
DRM/VRRM
VTM
110 A
V
400 V, 800 V, 1200 V
1.57 V
80 mA
IGT
TJ
-40 °C to 140 °C
TO-209AC (TO-94)
Single SCR
Package
Diode variation
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
110
UNITS
A
IT(AV)
TC
90
°C
IT(RMS)
172
50 Hz
60 Hz
50 Hz
60 Hz
2080
A
ITSM
2180
21.7
I2t
kA2s
19.8
VDRM/VRRM
400 to 1200
110
V
tq
Typical
μs
°C
TJ
-40 to 140
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
TYPE
NUMBER
VOLTAGE
CODE
PEAK VOLTAGE
V
40
80
400
800
500
900
VS-110RKI
VS-111RKI
20
120
1200
1300
Revision: 11-Mar-14
Document Number: 94379
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-110RKI...PbF, VS-111RKI...PbF Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
IT(AV)
TEST CONDITIONS
180° conduction, half sine wave
DC at 83 °C case temperature
VALUES
110
UNITS
A
Maximum average on-state current
at case temperature
90
°C
Maximum RMS on-state current
IT(RMS)
172
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
2080
2180
1750
1830
21.7
19.8
15.3
14.0
217
No voltage
reapplied
A
Maximum peak, one-cycle
non-repetitive surge current
ITSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
Maximum I2t for fusing
I2t
kA2s
100 % VRRM
reapplied
Maximum I2t for fusing
I2t
VT(TO)1
VT(TO)2
rt1
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
kA2s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
0.82
1.02
2.16
1.70
1.57
200
V
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
m
V
rt2
VTM
IH
Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse
Maximum holding current
TJ = 25 °C, anode supply 6 V resistive load
mA
Typical latching current
IL
400
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of
rise of turned-on current
Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM
dI/dt
300
A/μs
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
Typical delay time
td
tq
1
μs
ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/μs
Typical turn-off time
110
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 25
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
TJ = TJ maximum rated VDRM/VRRM applied
500
V/μs
Maximum peak reverse and
off-state leakage current
IRRM
,
20
mA
IDRM
Revision: 11-Mar-14
Document Number: 94379
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-110RKI...PbF, VS-111RKI...PbF Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
TJ = TJ maximum, tp 5 ms
UNITS
TYP.
MAX.
Maximum peak gate power
PGM
PG(AV)
IGM
12
3.0
3.0
20
W
A
Maximum average gate power
TJ = TJ maximum, f = 50 Hz, d% = 50
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
+ VGM
- VGM
TJ = TJ maximum, tp 5 ms
V
10
TJ = - 40 °C
TJ = 25 °C
180
80
40
2.5
1.6
1
-
120
-
DC gate current required to trigger
DC gate voltage required to trigger
IGT
mA
V
Maximum required gate
trigger/current/voltage are
the lowest value which will
trigger all units 12 V anode
to cathode applied
TJ = 140 °C
TJ = - 40 °C
TJ = 25 °C
TJ = 140 °C
-
VGT
2
-
Maximum gate current/
voltage not to trigger is the
maximum value which will
not trigger any unit with
rated VDRM anode to
DC gate current not to trigger
DC gate voltage not to trigger
IGD
6.0
mA
V
TJ = TJ maximum
VGD
0.25
cathode applied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
-40 to 140
-40 to 150
0.27
UNITS
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
TJ
°C
TStg
RthJC
RthCS
DC operation
K/W
Mounting surface, smooth, flat and greased
Non-lubricated threads
0.1
15.5
(137)
N · m
(lbf · in)
Mounting torque, 10 %
14
(120)
Lubricated threads
Approximate weight
Case style
130
g
See dimensions - link at the end of datasheet
TO-209AC (TO-94)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
120°
90°
0.043
0.052
0.066
0.096
0.167
0.031
0.053
0.071
0.101
0.169
TJ = TJ maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 11-Mar-14
Document Number: 94379
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-110RKI...PbF, VS-111RKI...PbF Series
www.vishay.com
Vishay Semiconductors
140
130
120
110
100
90
140
RthJC (DC) = 0.27 K/W
RthJC (DC) = 0.27 K/W
130
120
Ø
Ø
Conduction angle
Conduction period
110
100
DC
90
30°
120°
60°
120°
80
70
60°
180°
90°
180°
100
30°
40
90°
80
0
20 40 60 80 100 120 140 160 180
0
20
60
80
120
Average On-State Current (A)
94379_01
Average On-State Current (A)
94379_02
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
160
140
120
100
80
160
140
120
100
80
180°
120°
90°
60°
30°
RMS limit
60
60
Ø
40
40
Conduction angle
20
20
TJ = 140 °C
0
0
0
20
40
60
80
100
120
0
20
40
60
80
100
120
140
94379_03a
Average On-State Current (A)
94379_03b
Maximum Allowable
Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
220
200
180
160
140
120
100
80
220
200
180
160
140
DC
180°
120°
90°
60°
30°
RMS limit
120
100
80
60
40
20
0
60
Ø
Conduction period
40
20
TJ = 140 °C
0
0
20 40 60 80 100 120 140 160 180
0
20
40
60
80
100
120
140
94379_04a
Average On-State Current (A)
94379_04b
Maximum Allowable
Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
Revision: 11-Mar-14
Document Number: 94379
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-110RKI...PbF, VS-111RKI...PbF Series
www.vishay.com
Vishay Semiconductors
2000
1800
1600
1400
1200
1000
800
2500
Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 140 °C
Initial TJ = 140 °C
No voltage reapplied
Rated VRRM reapplied
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
2000
1500
1000
500
1
10
100
0.01
0.1
1
10
Number of Equal Amplitude Half
Pulse Train Duration (s)
94379_05
94379_06
Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10 000
TJ = 25 °C
1000
100
10
TJ = 140 °C
1
0
1
2
3
4
5
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
94379_07
1
0.1
Steady state value
RthJC = 0.27 K/W
(DC operation)
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
94379_08
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Revision: 11-Mar-14
Document Number: 94379
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-110RKI...PbF, VS-111RKI...PbF Series
www.vishay.com
Vishay Semiconductors
100
10
(1) PGM = 12 W, tp = 5 ms
(2) PGM = 30 W, tp = 2 ms
(3) PGM = 60 W, tp = 1 ms
Rectangular gate pulse
(a) Recommended load line for
rated dI/dt: 20 V, 30 Ω,
tr ≤ 0.5 μs, tp ≥ 6 μs
(b) Recommended load line for
≤ 30 % rated dI/dt: 15 V, 40 Ω,
tr ≤ 1 μs, tp ≥ 6 μs
(4) PGM = 200 W, tp = 300 μs
(a)
(b)
1
(1)
(2)
(3)
(4)
VGD
Frequency limited by PG(AV)
IGD
0.1
0.001
0.01
0.1
1
10
100
1000
94379_09
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS- 11
0
RKI 120 PbF
1
2
3
4
5
6
1
2
3
-
-
-
Vishay Semiconductors product
IT(AV) rated average output current (rounded/10)
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
Thyristor
4
5
6
-
-
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95003
Revision: 11-Mar-14
Document Number: 94379
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-209AC (TO-94) for 110RKI and 111RKI Series
DIMENSIONS in millimeters (inches)
Ceramic housing
2.6 (0.10) MAX.
16.5 (0.65) MAX.
) MIN.
Ø 8.5 (0.33)
Ø 4.3 (0.17)
9.5 (0.37
Flexible lead
20 (0.79) MIN.
C.S. 16 mm2
(0.025 s.i.)
C.S. 0.4 mm2
(0.0006 s.i.)
Red silicon rubber
Red cathode
157 (6.18)
170 (6.69)
215 10
(8.46 0.39)
White gate
Fast-on terminals
Red shrink
55 (2.16)
MIN.
AMP. 280000-1
REF-250
White shrink
24 (0.94)
MAX.
Ø 22.5 (0.88) MAX.
10 (0.39) MAX.
21 (0.83)
MAX.
SW 27
1/2"-20UNF-2A
29.5 (1.16) MAX.
Note
•
For metric device: M12 x 1.75 contact factory
Document Number: 95363
Revision: 25-Sep-08
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
Document Number: 91000
1
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