VS-113CNQ100APBF [VISHAY]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 55A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, D-61-8, 3 PIN;
| 型号： | VS-113CNQ100APBF |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 2 Element, 55A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, D-61-8, 3 PIN 局域网 高功率电源 二极管 |
| 文件： | 总9页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-113CNQ100APbF Series
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier New Generation 3
D-61 Package, 2 x 55 A
FEATURES
VS-113CNQ100APbF
Base
• 175 °C TJ operation
• Center tap module
• Low forward voltage drop
• High frequency operation
• High power discrete
common
cathode
Available
Available
1
2
3
Anode
2
Anode
1
Common
cathode
D-61-8
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
VS-113CNQ100ASMPbF
• Guard ring for enhanced ruggedness and long term
reliability
• New fully transfer-mold low profile, small footprint, high
current package
1
2
3
Anode
2
Anode
1
Common
cathode
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D-61-8-SM
Base
common
cathode
Note
*
VS-113CNQ100ASLPbF
This datasheet provides information about parts that are
RoHS-compliant and/or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information/tables in this datasheet for details.
1
3
Anode
2
Anode
1
DESCRIPTION
D-61-8-SL
The center tap Schottky rectifier module series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 175 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
PRODUCT SUMMARY
Package
D-61-8, D-61-8-SM, D-61-8-SL
IF(AV)
2 x 55 A
100 V
VR
VF at IF
0.81 V
I
RM max.
32 mA at 125 °C
175 °C
TJ max.
Diode variation
EAS
Common cathode
15 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
110
UNITS
Rectangular waveform
A
V
100
tp = 5 μs sine
7000
A
VF
55 Apk, TJ = 125 °C (per leg)
Range
0.66
V
TJ
-55 to +175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VR
VS-113CNQ100APbF
UNITS
Maximum DC reverse voltage
100
V
Maximum working peak reverse voltage
VRWM
Revision: 23-May-14
Document Number: 94125
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-113CNQ100APbF Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average
forward current
See fig. 5
per leg
55
IF(AV)
50 % duty cycle at TC = 150 °C, rectangular waveform
A
per device
110
Maximum peak one cycle
Following any rated
load condition and with
rated VRRM applied
5 μs sine or 3 μs rect. pulse
7000
non-repetitive surge current per leg
IFSM
EAS
IAR
A
10 ms sine or 6 ms rect. pulse
TJ = 25 °C, IAS = 1 A, L = 30 mH
720
15
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
0.81
UNITS
55 A
TJ = 25 °C
110 A
1.00
Maximum forward voltage drop per leg
See fig. 1
(1)
VFM
V
55 A
0.66
TJ = 125 °C
110 A
0.79
TJ = 25 °C
1.0
32
Maximum reverse leakage current per leg
See fig. 2
(1)
IRM
VR = Rated VR
TJ = 125 °C
mA
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
CT
LS
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
1960
5.5
pF
nH
dV/dt
10 000
V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
-55 to +175
°C
Maximum thermal resistance,
DC operation
0.5
junction to case per leg
See fig. 4
RthJC
Maximum thermal resistance,
junction to case per package
DC operation
0.25
0.30
°C/W
Typical thermal resistance,
case to heatsink (D-61-8 only)
Mounting surface, smooth and greased
Device flatness < 5 mils
RthCS
7.8
g
Approximate weight
0.28
oz.
minimum
maximum
12 (10)
24 (20)
kgf · cm
(lbf · in)
Mounting torque
(D-61-8 only)
Recommended hardware 3M stainless screw
Case style D-61-8
113CNQ100A
Marking device
Case style D-61-8-SM
Case style D-61-8-SL
113CNQ100ASM
113CNQ100ASL
Revision: 23-May-14
Document Number: 94125
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-113CNQ100APbF Series
www.vishay.com
Vishay Semiconductors
1000
1000
100
10
TJ = 175 °C
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
1
TJ = 75 °C
TJ = 50 °C
0.1
0.01
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
TJ = 25 °C
20
1
0.001
0
40
60
80
100
0
0.5
1.0
1.5
2.0
2.5
VR - Reverse Voltage (V)
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
10 000
1000
TJ = 25 °C
100
20
40
60
80
100
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
1
0.1
D = 0.75
D = 0.50
PDM
D = 0.33
D = 0.25
t1
Single pulse
D = 0.20
0.01
0.001
t2
(thermal resistance)
Notes:
1. Duty factor D = t1/t2
.
2. Peak TJ = PDM x ZthJC + TC
.
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 23-May-14
Document Number: 94125
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-113CNQ100APbF Series
www.vishay.com
Vishay Semiconductors
180
170
160
150
140
130
120
110
60
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
50
DC
40
30
RMS limit
Square wave (D = 0.50)
80 % rated VR applied
DC
50
20
10
0
See note (1)
0
10
20
30
40
60
70
80
0
10 20 30 40 50 60 70 80 90
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
10 000
1000
At any rated load condition and
with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
IRFP460
D.U.T.
Freewheel
diode
Rg = 25 Ω
Vd = 25 V
+
Current
monitor
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 23-May-14
Document Number: 94125
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-113CNQ100APbF Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- 113
C
N
Q
100
A
PbF
1
2
3
4
5
6
7
8
1
2
3
-
-
-
Vishay Semiconductors product
Current rating (110 A)
Circuit configuration:
C = common cathode
Package:
4
-
N = D-61
-
-
-
Schottky “Q” series
Voltage rating (100 = 100 V)
Package style:
5
6
7
A = D-61-8
ASM = D-61-8-SM
ASL = D-61-8-SL
-
None = standard production
PbF = lead (Pb)-free
8
Standard pack quantity: A = 10 pieces; ASM/ASL = 20 pieces
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95354
www.vishay.com/doc?95356
Dimensions
Part marking information
Revision: 23-May-14
Document Number: 94125
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
D-61-8, D-61-8-SM, D-61-8-SL
DIMENSIONS - D-61-8 in millimeters (inches)
Ø 4.17 (0.164)
Ø 3.91 (0.154)
(2 x)
30.15 (1.187)
29.90 (1.177)
8.89 (0.350)
8.73 (0.344)
1
2
3
11.05 (0.435) REF.
0.89 (0.035)
0.73 (0.029)
1.98 (0.078)
1.72 (0.068)
5.20 (0.205)
4.95 (0.195)
10.28 (0.405)
10.03 (0.395)
16.2 (0.640) REF.
14° MIN.
14° MIN.
1.04 (0.041)
0.84 (0.033)
5.97 (0.235)
5.71 (0.225)
37.97 (1.495)
37.72 (1.485)
(2 x)
R 0.0200
3.30 (0.130)
3.04 (0.120)
5°
(2 x)
5°
(2 x)
10.79 (0.425) MAX.
1.40 (0.055)
1.14 (0.045)
Revision: 28-Sep-11
Document Number: 95354
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
DIMENSIONS - D-61-8-SM in millimeters (inches)
19.93 (0.785)
19.68 (0.775)
8.89 (0.350)
8.73 (0.344)
11.05 (0.435) REF.
0.89 (0.035)
0.73 (0.029)
1.98 (0.078)
1.72 (0.068)
5.20 (0.205)
4.95 (0.195)
10.28 (0.405)
10.03 (0.395)
14° MIN.
14° MIN.
1.04 (0.041)
0.84 (0.033)
5.97 (0.235)
5.71 (0.225)
3.30 (0.130)
3.04 (0.120)
10.79 (0.425) MAX.
1.40 (0.055)
1.14 (0.045)
Revision: 28-Sep-11
Document Number: 95354
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
DIMENSIONS - D-61-8-SL in millimeters (inches)
14° MIN. 14° MIN.
19.93 (0.785)
19.68 (0.775)
0.89 (0.035)
0.73 (0.029)
8.89 (0.350)
8.73 (0.344)
5°
R 0.51 (0.020)
R 0.76 (0.030)
2.67 (0.105)
2.16 (0.085)
5.59 (0.220)
5.08 (0.200)
3.30 (0.130)
Detail “A”
1.98 (0.078)
1.72 (0.068)
1.04 (0.041)
0.84 (0.033)
3.05 (0.120)
5.20 (0.205)
4.95 (0.195)
5.97 (0.235)
5.71 (0.225)
5.33 (0.210)
R0 0.508
(R 0.02)
3.97 (0.156)
3.68 (0.145)
2.41 (0.095)
2.16 (0.085)
3.30 (0.130)
3.05 (0.120)
10.79 (0.425) MAX.
0.89 (0.035)
0.73 (0.029)
1.40 (0.055)
1.14 (0.045)
19.93 (0.785)
19.68 (0.775)
16.13 (0.635)
15.88 (0.625)
14.22 (0.560)
13.71 (0.540)
0.89 (0.035)
0.73 (0.029)
8.89 (0.350)
8.73 (0.344)
(2 x)
0.64 (0.025) REF.
(2 x)
3.97 (0.156)
3.68 (0.145)
5.59 (0.220)
5.08 (0.200)
1.98 (0.078)
1.72 (0.068)
(2 x)
10.16 (0.400) REF.
Revision: 28-Sep-11
Document Number: 95354
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
相关型号：
VS-113CNQ100ASL
Rectifier Diode, Schottky, 1 Phase, 2 Element, 100V V(RRM), Silicon, PLASTIC, D-61-8-SL, 3 PIN
VISHAY
VS-113CNQ100ASLPBF
Rectifier Diode, Schottky, 1 Phase, 2 Element, 55A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, CASE D-61-8-SL, 3 PIN
VISHAY
VS-113CNQ100ASMPBF
Rectifier Diode, Schottky, 1 Phase, 2 Element, 55A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, CASE D-61-8-SM, 3 PIN
VISHAY
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