VS-12CTQ035STRR-M3 [VISHAY]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 35V V(RRM), Silicon, TO-263AB, D2PAK-3/2;
| 型号： | VS-12CTQ035STRR-M3 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 2 Element, 35V V(RRM), Silicon, TO-263AB, D2PAK-3/2 二极管 |
| 文件： | 总8页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-12CTQ...S-M3, VS-12CTQ...-1-M3 Series
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 6 A
FEATURES
D2PAK
• 175 °C TJ operation
TO-262
• Center tap configuration
• Low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
Base
common
cathode
Base
common
cathode
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
2
2
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
2
2
1
1
3
3
Common
cathode
Common
cathode
Anode
Anode
Anode
Anode
DESCRIPTION
VS-12CTQ...-1-M3
VS-12CTQ...S-M3
The VS-12CTQ... center tap Schottky rectifier series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
PRODUCT SUMMARY
IF(AV)
2 x 6 A
35 V/40 V/45 V
0.53 V
VR
VF at IF
I
RM max.
7.0 mA at 125 °C
175 °C
TJ max.
EAS
8 mJ
Package
TO-263AB (D2PAK), TO-262AA
Diode variation
Common cathode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
12
UNITS
IF(AV)
VRRM
IFSM
VF
Rectangular waveform
A
V
Range
35 to 45
690
tp = 5 μs sine
A
6 Apk, TJ = 125 °C (per leg)
Range
0.53
V
TJ
-55 to 175
°C
VOLTAGE RATINGS
VS-12CTQ035S-M3
VS-12CTQ040S-M3
VS-12CTQ045S-M3
PARAMETER
SYMBOL
UNITS
VS-12CTQ035-1-M3 VS-12CTQ040-1-M3 VS-12CTQ045-1-M3
Maximum DC reverse voltage
VR
35
40
45
V
Maximum working peak reverse voltage
VRWM
Revision: 25-Feb-14
Document Number: 94924
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12CTQ...S-M3, VS-12CTQ...-1-M3 Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum average
forward current
See fig. 5
per leg
6
IF(AV)
50 % duty cycle at TC = 160 °C, rectangular waveform
A
per device
12
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
690
IFSM
A
140
VRRM applied
Non-repetitive avalanche energy per leg
EAS
IAR
TJ = 25 °C, IAS = 1.20 A, L = 11.10 mH
8
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
Repetitive avalanche current per leg
1.20
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
6 A
0.60
0.73
0.53
0.64
0.8
TJ = 25 °C
12 A
Maximum forward voltage drop per leg
See fig. 1
(1)
VFM
V
6 A
TJ = 125 °C
12 A
TJ = 25 °C
TJ = 125 °C
Maximum reverse leakage current per leg
See fig. 2
(1)
IRM
VR = Rated VR
mA
7.0
Threshold voltage
VF(TO)
rt
0.35
18.23
400
V
TJ = TJ maximum
Forward slope resistance
m
pF
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
LS
8.0
nH
dV/dt
10 000
V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
-55 to 175
°C
Maximum thermal resistance,
junction to case per leg
DC operation
See fig. 4
3.50
1.75
0.50
RthJC
Maximum thermal resistance,
junction to case per package
DC operation
°C/W
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
2
g
Approximate weight
Mounting torque
0.07
oz.
minimum
maximum
6 (5)
kgf · cm
(lbf · in)
12 (10)
12CTQ035S
Case style D2PAK
Case style TO-262
12CTQ040S
12CTQ045S
12CTQ035-1
12CTQ040-1
12CTQ045-1
Marking device
Revision: 25-Feb-14
Document Number: 94924
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12CTQ...S-M3, VS-12CTQ...-1-M3 Series
www.vishay.com
Vishay Semiconductors
100
100
TJ = 175 °C
10
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
1
10
0.1
TJ = 75 °C
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
0.01
TJ = 50 °C
0.001
TJ = 25 °C
0.0001
1
0
5
10 15 20 25 30 35 40 45
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
1000
TJ = 25 °C
100
0
10
20
30
40
50
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
PDM
0.1
0.01
t1
t2
Single pulse
(thermal resistance)
Notes:
1. Duty factor D = t1/t2
.
2. Peak TJ = PDM x ZthJC + TC
.
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 25-Feb-14
Document Number: 94924
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12CTQ...S-M3, VS-12CTQ...-1-M3 Series
www.vishay.com
Vishay Semiconductors
175
170
165
160
155
150
5.0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
DC
RMS limit
Square wave (D = 0.50)
80 % rated VR applied
DC
See note (1)
4
0
8
10
0
2
4
6
8
10
2
6
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs. Average
Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
10 000
1000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
IRFP460
D.U.T.
Freewheel
diode
Rg = 25 Ω
Vd = 25 V
+
Current
monitor
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 25-Feb-14
Document Number: 94924
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12CTQ...S-M3, VS-12CTQ...-1-M3 Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
12
C
T
Q
045
S
TRL -M3
1
2
3
4
5
6
7
8
9
1
-
-
-
-
-
-
-
Vishay Semiconductors product
2
3
4
5
6
7
Current rating (12 A)
Circuit configuration: C = Common cathode
T = TO-220
Schottky “Q” series
Voltage ratings
S = D2PAK
035 = 35 V
040 = 40 V
045 = 45 V
-1 = TO-262
8
9
-
-
None = Tube
TRL = Tape and reel (left oriented - for D2PAK only)
TRR = Tape and reel (right oriented - for D2PAK only)
-M3 = Halogen-free, RoHS-compliant and termination lead (Pb)-free
ORDERING INFORMATION
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
VS-12CTQ035S-M3
50
800
800
50
1000
800
VS-12CTQ035STRR-M3
VS-12CTQ035STRL-M3
VS-12CTQ035-1-M3
800
13" diameter reel
1000
1000
800
Antistatic plastic tubes
Antistatic plastic tubes
13" diameter reel
VS-12CTQ040S-M3
50
VS-12CTQ040STRR-M3
VS-12CTQ040STRL-M3
VS-12CTQ040-1-M3
800
800
50
800
13" diameter reel
1000
1000
800
Antistatic plastic tubes
Antistatic plastic tubes
13" diameter reel
VS-12CTQ045S-M3
50
VS-12CTQ045STRR-M3
VS-12CTQ045STRL-M3
VS-12CTQ045-1-M3
800
800
50
800
13" diameter reel
1000
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
TO-263AB (D2PAK)
www.vishay.com/doc?95046
Dimensions
TO-262AA
www.vishay.com/doc?95419
www.vishay.com/doc?95444
www.vishay.com/doc?95443
www.vishay.com/doc?95032
Part marking information
Part marking information
Packaging information
TO-263AB (D2PAK)
TO-262AA
Revision: 25-Feb-14
Document Number: 94924
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC outline D2PAK (SMD-220)
B
A
Pad layout
A
(2)(3)
E
A
(E)
c2
11.00
MIN.
(0.43)
(3)
D
L1
4
2
9.65
MIN.
(0.38)
(D1) (3)
Detail A
17.90 (0.70)
15.00 (0.625)
H
(2)
1
3
3.81
MIN.
L2
(0.15)
B
B
2.32
MIN.
(0.08)
A
B
2.64 (0.103)
2.41 (0.096)
(3)
E1
2 x b2
2 x b
C
c
View A - A
0.004 M
Base
Metal
0.010 M
M
B
A
Plating
(4)
b1, b3
2 x
e
H
Gauge
plane
(4)
c1
(c)
B
0° to 8°
Seating
plane
Lead assignments
L3
A1
Lead tip
(b, b2)
L
Diodes
L4
Section B - B and C - C
Scale: None
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Detail “A”
Rotated 90 °CW
Scale: 8:1
MILLIMETERS
SYMBOL
INCHES
MILLIMETERS
INCHES
NOTES
SYMBOL
NOTES
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
MAX.
4.83
0.254
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
MIN.
6.86
9.65
7.90
MAX.
8.00
MIN.
MAX.
0.315
0.420
0.346
A
A1
b
D1
E
0.270
0.380
0.311
3
2, 3
3
10.67
8.80
E1
e
b1
b2
b3
c
4
4
4
2
2.54 BSC
0.100 BSC
H
14.61
1.78
-
15.88
2.79
1.65
1.78
0.575
0.070
-
0.625
0.110
0.066
0.070
L
L1
L2
L3
L4
3
c1
c2
D
1.27
0.050
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Outline conforms to JEDEC outline TO-263AB
Document Number: 95046
Revision: 31-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-262
DIMENSIONS in millimeters and inches
Modified JEDEC outline TO-262
(2) (3)
E
A
(Datum A)
B
A
c2
E
A
(3)
L1
D
Seating
plane
D1(3)
1
2
3
C
C
L2
B
B
L (2)
A
c
(3)
E1
3 x b2
3 x b
A1
Section A - A
2 x e
Base
metal
(4)
b1, b3
Plating
c
M
M
B
0.010
A
Lead assignments
c1
(4)
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
(b, b2)
Lead tip
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
SYMBOL
NOTES
MIN.
4.06
2.03
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
6.86
9.65
7.90
MAX.
4.83
3.02
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
8.00
10.67
8.80
MIN.
0.160
0.080
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
0.270
0.380
0.311
MAX.
0.190
0.119
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
0.315
0.420
0.346
A
A1
b
b1
b2
b3
c
4
4
4
c1
c2
D
2
3
D1
E
2, 3
3
E1
e
2.54 BSC
0.100 BSC
L
13.46
-
14.10
1.65
3.71
0.530
-
0.555
0.065
0.146
L1
L2
3
3.56
0.140
Notes
(1)
(4)
(5)
(6)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
Dimension b1 and c1 apply to base metal only
Controlling dimension: inches
Outline conform to JEDEC TO-262 except A1 (maximum), b
(minimum) and D1 (minimum) where dimensions derived the
actual package outline
(2)
(3)
Thermal pad contour optional within dimension E, L1, D1 and E1
Document Number: 95419
Revision: 04-Oct-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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