VS-12TQ045STRLHM3
更新时间：2024-10-29 13:58:23
品牌：VISHAY
描述：Rectifier Diode, Schottky, 1 Phase, 1 Element, 45V V(RRM), Silicon, TO-263AB, D2PAK-3/2
概述
规格参数
数据手册VS-12TQ045STRLHM3 概述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 45V V(RRM), Silicon, TO-263AB, D2PAK-3/2 整流二极管
VS-12TQ045STRLHM3 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Active |
| 包装说明： | D2PAK-3/2 | Reach Compliance Code： | unknown |
| ECCN代码： | EAR99 | Factory Lead Time： | 26 weeks |
| 风险等级： | 5.68 | Is Samacsys： | N |
| 其他特性： | FREE WHEELING DIODE | 应用： | GENERAL PURPOSE |
| 外壳连接： | CATHODE | 配置： | SINGLE |
| 二极管元件材料： | SILICON | 二极管类型： | RECTIFIER DIODE |
| 最大正向电压 (VF)： | 0.71 V | JEDEC-95代码： | TO-263AB |
| JESD-30 代码： | R-PSSO-G2 | JESD-609代码： | e3 |
| 湿度敏感等级： | 1 | 最大非重复峰值正向电流： | 250 A |
| 元件数量： | 1 | 相数： | 1 |
| 端子数量： | 2 | 最高工作温度： | 150 °C |
| 最低工作温度： | -55 °C | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 峰值回流温度（摄氏度）： | 245 | 参考标准： | AEC-Q101 |
| 最大重复峰值反向电压： | 45 V | 最大反向电流： | 1750 µA |
| 表面贴装： | YES | 技术： | SCHOTTKY |
| 端子面层： | Matte Tin (Sn) | 端子形式： | GULL WING |
| 端子位置： | SINGLE | 处于峰值回流温度下的最长时间： | 30 |
| Base Number Matches： | 1 |
VS-12TQ045STRLHM3 数据手册
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PDF下载VS-12TQ035SHM3, VS-12TQ040SHM3, VS-12TQ045SHM3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 15 A
FEATURES
• 150 °C TJ operation
Base
cathode
2
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
3
1
D2PAK
N/C
Anode
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
PRODUCT SUMMARY
• AEC-Q101 qualified, meets JESD 201, class 1 whisker
test
IF(AV)
15 A
VR
35 V, 40 V, 45 V
0.50 V
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
VF at IF
IRM max.
TJ max.
EAS
70 mA at 125 °C
150 °C
DESCRIPTION
The VS-12TQ...SHM3 Schottky rectifier series has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
16 mJ
Package
Diode variation
TO-263AB (D2PAK)
Single die
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
15
UNITS
IF(AV)
VRRM
IFSM
VF
Rectangular waveform
A
V
Range
35 to 45
990
tp = 5 μs sine
15 Apk, TJ = 125 °C
Range
A
0.50
V
TJ
-55 to +150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VR
VS-12TQ035SHM3
35
VS-12TQ040SHM3
VS-12TQ045SHM3
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
40
45
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TC = 120 °C, rectangular waveform
VALUES
UNITS
Maximum average forward current
See fig. 5
IF(AV)
15
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Following any rated
load condition and with
rated VRRM applied
5 μs sine or 3 μs rect. pulse
990
IFSM
A
10 ms sine or 6 ms rect. pulse
250
16
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TJ = 25 °C, IAS = 2.4 A, L = 5.5 mH
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
2.4
Revision: 24-Feb-15
Document Number: 95853
1
For technical questions within your region: DiodesAmericas@vishay.com, iodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12TQ035SHM3, VS-12TQ040SHM3, VS-12TQ045SHM3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
0.56
0.71
0.50
0.64
1.75
70
UNITS
15 A
TJ = 25 °C
30 A
Maximum forward voltage drop
See fig. 1
(1)
VFM
V
15 A
TJ = 125 °C
30 A
TJ = 25 °C
TJ = 125 °C
Maximum reverse leakage current
See fig. 2
(1)
IRM
V
R = Rated VR
mA
Maximum junction capacitance
Typical series inductance
CT
LS
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
900
pF
nH
8.0
Maximum voltage rate of change
dV/dt
10 000
V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
-55 to +150
°C
Maximum thermal resistance,
junction to case
DC operation
See fig. 4
RthJC
RthCS
2.0
°C/W
Typical thermal resistance,
case to heatsink
Mounting surface, smooth and greased
0.50
2
g
Approximate weight
0.07
oz.
minimum
maximum
6 (5)
kgf · cm
(lbf · in)
Mounting torque
Marking device
12 (10)
12TQ030SH
12TQ040SH
12TQ045SH
Case style D2PAK
Revision: 24-Feb-15
Document Number: 95853
2
For technical questions within your region: DiodesAmericas@vishay.com, iodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12TQ035SHM3, VS-12TQ040SHM3, VS-12TQ045SHM3
www.vishay.com
Vishay Semiconductors
1000
1000
100
10
100
TJ = 150 °C
10
TJ = 125 °C
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
TJ = 100 °C
1
0.1
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
1
0.01
0.001
0.1
0
5
10 15 20 25 30 35 40 45
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1000
TJ = 25 °C
100
0
10
20
30
40
50
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
0.1
0.01
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
t1
t2
Notes:
Single pulse
(thermal resistance)
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
.
.
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 24-Feb-15
Document Number: 95853
3
For technical questions within your region: DiodesAmericas@vishay.com, iodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12TQ035SHM3, VS-12TQ040SHM3, VS-12TQ045SHM3
www.vishay.com
Vishay Semiconductors
155
145
135
125
115
12
D = 0.08
RthJC (DC) = 2.0 °C/W
D = 0.17
D = 0.25
D = 0.33
D = 0.50
10
8
RMS limit
6
DC
4
DC
2
0
0
2
4
6
8
10 12 14 16 18 20 22
0
4
8
12
16
20
24
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
10 000
1000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
IRFP460
D.U.T.
Freewheel
diode
R
g = 25 Ω
Vd = 25 V
+
Current
monitor
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Revision: 24-Feb-15
Document Number: 95853
4
For technical questions within your region: DiodesAmericas@vishay.com, iodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12TQ035SHM3, VS-12TQ040SHM3, VS-12TQ045SHM3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
12
T
Q
045
S
TRL
H
M3
1
2
3
4
5
6
7
8
9
1
-
-
-
-
-
-
-
Vishay Semiconductors product
Current rating
Package: T = TO-220, D2PAK
2
3
4
5
6
7
Schottky “Q” series
Voltage ratings
S = D2PAK
035 = 35 V
040 = 40 V
045 = 45 V
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
H = AEC-Q101 qualified
8
9
-
-
M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
VS-12TQ035SHM3
50
800
800
50
1000
800
VS-12TQ035STRRHM3
VS-12TQ035STRLHM3
VS-12TQ040SHM3
800
13" diameter reel
1000
800
Antistatic plastic tubes
13" diameter reel
VS-12TQ040STRRHM3
VS-12TQ040STRLHM3
VS-12TQ045SHM3
800
800
50
800
13" diameter reel
1000
800
Antistatic plastic tubes
13" diameter reel
VS-12TQ045STRRHM3
VS-12TQ045STRLHM3
800
800
800
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95046
Part marking information
Packaging information
www.vishay.com/doc?95444
www.vishay.com/doc?95032
Revision: 24-Feb-15
Document Number: 95853
5
For technical questions within your region: DiodesAmericas@vishay.com, iodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2PAK (SMD-220)
B
A
Pad layout
A
(2)(3)
E
A
(E)
c2
11.00
MIN.
(0.43)
(3)
D
L1
4
2
9.65
MIN.
(0.38)
(D1) (3)
Detail A
17.90 (0.70)
15.00 (0.625)
H
(2)
1
3
3.81
MIN.
L2
(0.15)
B
B
2.32
MIN.
(0.08)
A
B
2.64 (0.103)
2.41 (0.096)
(3)
E1
2 x b2
2 x b
C
c
View A - A
0.004 M
Base
Metal
0.010 M
M
B
A
Plating
(4)
b1, b3
2 x
e
H
Gauge
plane
(4)
c1
(c)
B
0° to 8°
Seating
plane
L3
A1
Lead tip
(b, b2)
L
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
MILLIMETERS
INCHES
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
MAX.
4.83
0.254
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
MIN.
6.86
9.65
7.90
MAX.
8.00
MIN.
MAX.
0.315
0.420
0.346
A
A1
b
D1
E
0.270
0.380
0.311
3
2, 3
3
10.67
8.80
E1
e
b1
b2
b3
c
4
4
4
2
2.54 BSC
0.100 BSC
H
14.61
1.78
-
15.88
2.79
1.65
1.78
0.575
0.070
-
0.625
0.110
0.066
0.070
L
L1
L2
L3
L4
3
c1
c2
D
1.27
0.050
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Part Marking Information
www.vishay.com
Vishay Semiconductors
D2PAK
Example: This is a xxxxxx (1) with
assembly lot code AC,
Part number
xxxxxx (1)
assembled on WW 02, 2010
V
ZYWWX
C
Product version (optional):
Z (replaced according below table)
Date code:
A
Assembly
lot code
Year 0 = 2010
Week 02
Line X
Note
(1)
If part number contain “H” as last digit, product is AEC-Q101 qualified
ENVIRONMENTAL NAMING CODE (Z)
PRODUCT DEFINITION
Termination lead (Pb)-free
A
B
E
F
Totally lead (Pb)-free
RoHS-compliant and termination lead (Pb)-free
RoHS-compliant and totally lead (Pb)-free
M
N
G
Halogen-free, RoHS-compliant, and termination lead (Pb)-free
Halogen-free, RoHS-compliant, and totally lead (Pb)-free
Green
Revision: 21-Jun-17
Document Number: 95444
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
VS-12TQ045STRLHM3 相关器件
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| VS-12TQ045STRLPBF | VISHAY | Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 45V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, D2PAK-3 | 获取价格 |
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| VS-12TQ045STRR-M3 | VISHAY | Rectifier Diode, Schottky, 1 Phase, 1 Element, 45V V(RRM), Silicon, TO-263AB, D2PAK-3/2 | 获取价格 |
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| VS-12TQPBF | VISHAY | Schottky Rectifier, 15 A | 获取价格 |
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| VS-12TTS08S-M3 | VISHAY | Silicon Controlled Rectifier, 12.5A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-263AB, D2PAK-3/2 | 获取价格 |
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| VS-12TTS08SLHM3 | VISHAY | Thyristor Surface Mount, Phase Control SCR, 8 A | 获取价格 |
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| VS-12TTS08SPBF | VISHAY | Silicon Controlled Rectifier, 12.5 A, 800 V, SCR, HALOGEN FREE AND ROHS COMPLIANT, SMD-220, D2PAK-3 | 获取价格 |
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