VS-15ETH06SPBF [VISHAY]

Hyperfast Rectifier, 15 A FRED Pt®;
VS-15ETH06SPBF
型号: VS-15ETH06SPBF
厂家: VISHAY    VISHAY
描述:

Hyperfast Rectifier, 15 A FRED Pt®

快速软恢复高电源 软恢复二极管 超快速软恢复二极管 超快速软恢复高功率电源
文件: 总8页 (文件大小:166K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
VS-15ETH06SPbF, VS-15ETH06-1PbF  
www.vishay.com  
Vishay Semiconductors  
Hyperfast Rectifier, 15 A FRED Pt®  
FEATURES  
• Hyperfast recovery time  
• Low forward voltage drop  
• Low leakage current  
• 175 °C operating junction temperature  
• Single die center tap module  
TO-263AB (D2PAK)  
TO-262AA  
Base  
cathode  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
2
2
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
3
1
3
1
DESCRIPTION / APPLICATIONS  
N/C  
Anode  
N/C  
Anode  
State of the art hyperfast recovery rectifiers designed with  
optimized performance of forward voltage drop, hyperfast  
recovery time, and soft recovery.  
VS-15ETH06SPbF  
VS-15ETH06-1PbF  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
These devices are intended for use in PFC boost stage in the  
AC/DC section of SMPS, inverters or as freewheeling  
diodes.  
The extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
PRODUCT SUMMARY  
Package  
TO-263AB (D2PAK), TO-262AA  
IF(AV)  
15 A  
600 V  
VR  
VF at IF  
1.3 V  
t
rr (typ.)  
22 ns  
TJ max.  
175 °C  
Single diode  
Diode variation  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
MAX.  
600  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Peak repetitive forward current  
Operating junction and storage temperatures  
V
TC = 140 °C  
TJ = 25 °C  
15  
IFSM  
120  
A
IFM  
30  
TJ, TStg  
-65 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 15 A  
600  
-
-
V
-
-
-
-
-
-
1.8  
1.3  
0.2  
30  
2.2  
1.6  
50  
500  
-
Forward voltage  
VF  
IR  
IF = 15 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
Junction capacitance  
Series inductance  
CT  
LS  
20  
pF  
nH  
Measured lead to lead 5 mm from package body  
8.0  
-
Revision: 09-Jul-15  
Document Number: 94003  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-15ETH06SPbF, VS-15ETH06-1PbF  
www.vishay.com  
Vishay Semiconductors  
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V  
IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V  
TJ = 25 °C  
MIN.  
TYP.  
22  
MAX.  
UNITS  
-
-
-
-
-
-
-
-
-
-
-
30  
35  
-
28  
Reverse recovery time  
trr  
ns  
29  
TJ = 125 °C  
75  
-
IF = 15 A  
dIF/dt = 200 A/μs  
TJ = 25 °C  
3.5  
7
-
Peak recovery current  
IRRM  
A
TJ = 125 °C  
-
V
R = 390 V  
TJ = 25 °C  
57  
-
Reverse recovery charge  
Qrr  
μC  
TJ = 125 °C  
300  
51  
-
Reverse recovery time  
Peak recovery current  
Reverse recovery charge  
trr  
-
ns  
A
IF = 15 A  
IRRM  
Qrr  
TJ = 125 °C  
dIF/dt = 800 A/μs  
20  
-
V
R = 390 V  
580  
-
nC  
THERMAL - MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Maximum junction and storage  
temperature range  
TJ, TStg  
-65  
-
175  
°C  
Thermal resistance,   
junction to case per leg  
RthJC  
RthJA  
RthCS  
-
-
-
1.0  
-
1.3  
70  
-
Thermal resistance,   
junction to ambient per leg  
Typical socket mount  
°C/W  
Thermal resistance,   
case to heatsink  
Mounting surface, flat, smooth and  
greased  
0.5  
-
-
2.0  
-
-
g
Weight  
0.07  
oz.  
6.0  
(5.0)  
12  
(10)  
kgf · cm  
(lbf · in)  
Mounting torque  
Marking device  
-
Case style TO-263AB (D2PAK)  
Case style TO-262AA  
15ETH06S  
15ETH06-1  
100  
10  
1
1000  
100  
TJ = 175 °C  
TJ = 150 °C  
TJ = 125 °C  
10  
1
TJ = 175 °C  
TJ = 100 °C  
TJ = 150 °C  
TJ = 25 °C  
0.1  
TJ = 25 °C  
0.01  
0.001  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0
100  
200  
300  
400  
500  
600  
VF - Forward Voltage Drop (V)  
Fig. 1 - Typical Forward Voltage Drop Characteristics  
VR - Reverse Voltage (V)  
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage  
Revision: 09-Jul-15  
Document Number: 94003  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-15ETH06SPbF, VS-15ETH06-1PbF  
www.vishay.com  
Vishay Semiconductors  
1000  
100  
10  
TJ = 25 °C  
0
100  
200  
300  
400  
500  
600  
VR - Reverse Voltage (V)  
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage  
10  
1
0.1  
PDM  
D = 0.50  
D = 0.20  
D = 0.10  
D = 0.05  
D = 0.02  
D = 0.01  
t1  
t2  
Notes:  
1. Duty factor D = t1/t2  
2. Peak TJ = PDM x ZthJC + TC  
.
Single pulse  
(thermal resistance)  
.
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1 1  
10  
t1 - Rectangular Pulse Duration (s)  
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics  
180  
170  
160  
150  
140  
130  
120  
110  
35  
30  
25  
20  
15  
10  
RMS Limit  
D = 0.01  
DC  
D = 0.02  
D = 0.05  
D = 0.10  
D = 0.20  
D = 0.50  
Square wave (D = 0.50)  
80 % rated VR applied  
DC  
5
0
See note (1)  
0
5
10  
15  
20  
25  
0
5
10  
15  
20  
25  
IF(AV) - Average Forward Current (A)  
IF(AV) - Average Forward Current (A)  
Fig. 6 - Forward Power Loss Characteristics  
Fig. 5 - Maximum Allowable Case Temperature vs.  
Average Forward Current  
Note  
(1)  
Formula used: TC = TJ - (Pd + PdREV) x RthJC;  
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);  
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR  
Revision: 09-Jul-15  
Document Number: 94003  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-15ETH06SPbF, VS-15ETH06-1PbF  
www.vishay.com  
Vishay Semiconductors  
100  
80  
60  
40  
20  
0
1000  
IF = 30 A  
IF = 15 A  
VR = 390 V  
TJ = 125 °C  
TJ = 25 °C  
800  
IF = 30 A  
IF = 15 A  
600  
400  
200  
0
VR = 390 V  
TJ = 125 °C  
TJ = 25 °C  
100  
1000  
100  
1000  
dIF/dt (A/µs)  
dIF/dt (A/µs)  
Fig. 7 - Typical Reverse Recovery vs. dIF/dt  
Fig. 8 - Typical Stored Charge vs. dIF/dt  
(3)  
trr  
IF  
ta  
tb  
0
(4)  
Qrr  
(2)  
IRRM  
0.5 IRRM  
(5)  
dI(rec)M/dt  
0.75 IRRM  
dIF/dt  
(1)  
(4) Qrr - area under curve defined by trr  
(1) dIF/dt - rate of change of current  
and IRRM  
through zero crossing  
trr x IRRM  
(2) IRRM - peak reverse recovery current  
Qrr  
=
2
(3) trr - reverse recovery time measured  
from zero crossing point of negative  
going IF to point where a line passing  
through 0.75 IRRM and 0.50 IRRM  
extrapolated to zero current.  
(5) dI(rec)M/dt - peak rate of change of  
current during tb portion of trr  
Fig. 9 - Reverse Recovery Waveform and Definitions  
Revision: 09-Jul-15  
Document Number: 94003  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-15ETH06SPbF, VS-15ETH06-1PbF  
www.vishay.com  
Vishay Semiconductors  
ORDERING INFORMATION TABLE  
Device code  
VS-  
15  
E
T
H
06  
S
TRL PbF  
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
-
-
-
-
-
-
Vishay Semiconductors product  
Current rating (15 A)  
E = single diode  
T = TO-220, D2PAK  
H = hyperfast rectifier  
Voltage rating (06 = 600 V)  
S = D2PAK  
-
-1 = TO-262  
-
8
9
None = tube (50 pieces)  
TRL = tape and reel (left oriented, for D2PAK package)  
TRR = tape and reel (right oriented, for D2PAK package)  
PbF = lead (Pb)-free  
-
ORDERING INFORMATION (Example)  
PREFERRED P/N  
QUANTITY PER REEL  
MINIMUM ORDER QUANTITY  
PACKAGING DESCRIPTION  
VS-15ETH06SPBF  
50  
1000  
800  
Antistatic plastic tubes  
13" diameter plastic tape and reel  
13" diameter plastic tape and reel  
Antistatic plastic tubes  
VS-15ETH06TRRSPBF  
VS-15ETH06STRLPBF  
VS-15ETH06-1PBF  
800  
800  
50  
800  
1000  
LINKS TO RELATED DOCUMENTS  
TO-263AB (D2PAK)  
www.vishay.com/doc?95046  
Dimensions  
TO-262AA  
www.vishay.com/doc?95419  
www.vishay.com/doc?95008  
www.vishay.com/doc?95032  
Part marking information  
Packaging information  
Revision: 09-Jul-15  
Document Number: 94003  
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Outline Dimensions  
Vishay High Power Products  
D2PAK, TO-262  
DIMENSIONS FOR D2PAK in millimeters and inches  
Conforms to JEDEC outline D2PAK (SMD-220)  
B
A
Pad layout  
A
(2)(3)  
E
A
(E)  
c2  
11.00  
MIN.  
(0.43)  
(3)  
D
L1  
4
2
9.65  
(0.38)  
MIN.  
(D1) (3)  
Detail A  
17.90 (0.70)  
15.00 (0.625)  
H
(2)  
1
3
3.81  
MIN.  
L2  
(0.15)  
B
B
2.32  
MIN.  
(0.08)  
A
B
2.64 (0.103)  
2.41 (0.096)  
(3)  
E1  
2 x b2  
2 x b  
C
c
View A - A  
0.004 M  
Base  
Metal  
0.010 M  
M
B
A
Plating  
(4)  
b1, b3  
2 x  
e
H
Gauge  
plane  
(4)  
c1  
(c)  
B
0° to 8°  
Seating  
plane  
Lead assignments  
L3  
A1  
Lead tip  
(b, b2)  
L
Diodes  
L4  
Detail “A”  
Rotated 90 °CW  
Section B - B and C - C  
1. - Anode (two die)/open (one die)  
2., 4. - Cathode  
3. - Anode  
Scale: None  
Scale: 8:1  
MILLIMETERS  
SYMBOL  
INCHES  
MILLIMETERS  
INCHES  
NOTES  
SYMBOL  
NOTES  
MIN.  
4.06  
0.00  
0.51  
0.51  
1.14  
1.14  
0.38  
0.38  
1.14  
8.51  
MAX.  
4.83  
0.254  
0.99  
0.89  
1.78  
1.73  
0.74  
0.58  
1.65  
9.65  
MIN.  
0.160  
0.000  
0.020  
0.020  
0.045  
0.045  
0.015  
0.015  
0.045  
0.335  
MAX.  
0.190  
0.010  
0.039  
0.035  
0.070  
0.068  
0.029  
0.023  
0.065  
0.380  
MIN.  
6.86  
9.65  
7.90  
MAX.  
8.00  
MIN.  
MAX.  
0.315  
0.420  
0.346  
A
A1  
b
D1  
E
0.270  
0.380  
0.311  
3
2, 3  
3
10.67  
8.80  
E1  
e
b1  
b2  
b3  
c
4
4
4
2
2.54 BSC  
0.100 BSC  
H
14.61  
1.78  
-
15.88  
2.79  
1.65  
1.78  
0.575  
0.070  
-
0.625  
0.110  
0.066  
0.070  
L
L1  
L2  
L3  
L4  
3
c1  
c2  
D
1.27  
0.050  
0.25 BSC  
0.010 BSC  
4.78  
5.28  
0.188  
0.208  
Notes  
(1)  
(7)  
Dimensioning and tolerancing per ASME Y14.5 M-1994  
Dimension D and E do not include mold flash. Mold flash shall not  
exceed 0.127 mm (0.005") per side. These dimensions are  
measured at the outmost extremes of the plastic body  
Thermal pad contour optional within dimension E, L1, D1 and E1  
Dimension b1 and c1 apply to base metal only  
Outline conforms to JEDEC outline TO-263AB  
(2)  
(3)  
(4)  
(5)  
(6)  
Datum A and B to be determined at datum plane H  
Controlling dimension: inch  
Document Number: 95014  
Revision: 31-Mar-09  
For technical questions concerning discrete products, contact: diodes-tech@vishay.com  
For technical questions concerning module products, contact: ind-modules@vishay.com  
www.vishay.com  
1
Outline Dimensions  
Vishay High Power Products  
D2PAK, TO-262  
DIMENSIONS FOR TO-262 in millimeters and inches  
Modified JEDEC outline TO-262  
(2) (3)  
E
A
(Datum A)  
B
A
c2  
E
A
(3)  
L1  
D
Seating  
plane  
D1(3)  
1
2
3
C
C
L2  
B
B
L (2)  
A
c
(3)  
E1  
3 x b2  
3 x b  
A1  
Section A - A  
2 x e  
Base  
metal  
(4)  
b1, b3  
Plating  
c
M
M
B
0.010  
A
Lead assignments  
c1  
(4)  
Diodes  
1. - Anode (two die)/open (one die)  
2., 4. - Cathode  
3. - Anode  
(b, b2)  
Lead tip  
Section B - B and C - C  
Scale: None  
MILLIMETERS  
INCHES  
SYMBOL  
NOTES  
MIN.  
4.06  
2.03  
0.51  
0.51  
1.14  
1.14  
0.38  
0.38  
1.14  
8.51  
6.86  
9.65  
7.90  
MAX.  
4.83  
3.02  
0.99  
0.89  
1.78  
1.73  
0.74  
0.58  
1.65  
9.65  
8.00  
10.67  
8.80  
MIN.  
0.160  
0.080  
0.020  
0.020  
0.045  
0.045  
0.015  
0.015  
0.045  
0.335  
0.270  
0.380  
0.311  
MAX.  
0.190  
0.119  
0.039  
0.035  
0.070  
0.068  
0.029  
0.023  
0.065  
0.380  
0.315  
0.420  
0.346  
A
A1  
b
b1  
b2  
b3  
c
4
4
4
c1  
c2  
D
2
3
D1  
E
2, 3  
3
E1  
e
2.54 BSC  
0.100 BSC  
L
13.46  
-
14.10  
1.65  
3.71  
0.530  
-
0.555  
0.065  
0.146  
L1  
L2  
3
3.56  
0.140  
Notes  
(1)  
(6)  
Dimensioning and tolerancing as per ASME Y14.5M-1994  
Dimension D and E do not include mold flash. Mold flash shall not  
exceed 0.127 mm (0.005") per side. These dimensions are  
measured at the outmost extremes of the plastic body  
Thermal pad contour optional within dimension E, L1, D1 and E1  
Dimension b1 and c1 apply to base metal only  
Outline conform to JEDEC TO-262 except A1 (maximum), b  
(minimum) and D1 (minimum) where dimensions derived the  
actual package outline  
(2)  
(3)  
(4)  
(5)  
Controlling dimension: inches  
www.vishay.com  
2
For technical questions concerning discrete products, contact: diodes-tech@vishay.com  
For technical questions concerning module products, contact: ind-modules@vishay.com  
Document Number: 95014  
Revision: 31-Mar-09  
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of  
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding  
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a  
particular product with the properties described in the product specification is suitable for use in a particular application.  
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over  
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.  
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for  
such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document  
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Revision: 13-Jun-16  
Document Number: 91000  
1

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Ultralow VF Hyperfast Rectifier for Discontinuous Mode PFC, 15 A FRED Pt®
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VS-15ETL06HN3

Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-220AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-2
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VS-15ETL06PBF

Ultralow VF Hyperfast Rectifier for Discontinuous Mode PFC, 15 A FRED Pt®
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VS-15ETL06SPBF

Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-220, D2PAK-3
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VS-15ETL06STRL-M3

DIODE GEN PURP 600V 15A TO263AB
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VS-15ETL06STRR-M3

DIODE GEN PURP 600V 15A TO263AB
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