VS-160MT100KPBF [VISHAY]
IC BRIDGE 3PH 160A 1000V MTK;型号: | VS-160MT100KPBF |
厂家: | VISHAY |
描述: | IC BRIDGE 3PH 160A 1000V MTK |
文件: | 总8页 (文件大小:171K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VS-130-160MT..KPbF Series
www.vishay.com
Vishay Semiconductors
Three Phase Bridge, 130 A to 160 A
(Power Modules)
FEATURES
• Package fully compatible with the industry
standard INT-A-PAK power modules series
• High thermal conductivity package, electrically
insulated case
• Excellent power volume ratio
• 4000 VRMS isolating voltage
• UL E78996 approved
• Designed and qualified for industrial level
MTK
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
DESCRIPTION
IO
130 A to 160 A
A range of extremely compact, encapsulated three phase
bridge rectifiers offering efficient and reliable operation.
They are intended for use in general purpose and heavy duty
applications.
VRRM
800 V to 1600 V
MTK
Package
Circuit configuration
Three phase bridge
MAJOR RATINGS AND CHARACTERISTICS
VALUES
130MT.K
VALUES
UNITS
SYMBOL
CHARACTERISTICS
160MT.K
130 (160)
85 (62)
1130
160 (200)
85 (60)
1430
A
IO
TC
°C
50 Hz
60 Hz
50 Hz
60 Hz
IFSM
I2t
A
1180
1500
6400
10 200
9300
A2s
5800
I2t
VRRM
TStg
TJ
64 000
102 000
A2s
Range
Range
800 to 1600
-40 to 150
-40 to 150
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
IRRM MAXIMUM
AT TJ = MAXIMUM
mA
VOLTAGE
CODE
TYPE NUMBER
PEAK REVERSE VOLTAGE
V
80
800
900
100
120
140
160
1000
1200
1400
1600
1100
1300
1500
1700
VS-130MT.K
VS-160MT.K
10
Revision: 17-Aug-17
Document Number: 94354
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-130-160MT..KPbF Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
VALUES
130MT.K
VALUES
160MT.K
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
130 (160)
85 (62)
1130
160 (200)
85 (60)
1430
A
Maximum DC output current
IO
120° rect. conduction angle
at case temperature
°C
t = 10 ms
No voltage
reapplied
t = 8.3 ms
Maximum peak, one-cycle
forward, non-repetitive surge
current
1180
1500
IFSM
A
t = 10 ms
950
1200
100 % VRRM
reapplied
t = 8.3 ms
1000
1260
Initial
TJ = TJ maximum
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
6400
10 200
9300
No voltage
reapplied
5800
Maximum I2t for fusing
I2t
A2s
4500
7200
100 % VRRM
reapplied
4100
6600
Maximum I2t for fusing
I2t
t = 0.1 ms to 10 ms, no voltage reapplied
64 000
102 000
A2s
Low level value of
(16.7 % x x IT(AV) < I < x IT(AV)),
VT(TO)1
0.78
0.99
4.59
4.17
1.63
0.81
1.04
3.52
3.13
1.49
threshold voltage
TJ maximum
V
High level value of
threshold voltage
VT(TO)2
rf1
(I > x IT(AV)), TJ maximum
Low level value of forward slope
resistance
16.7 % x x IT(AV) < I < x IT(AV)),
TJ maximum
m
High level of forward slope
resistance
rf2
(I > x IT(AV)), TJ maximum
Maximum forward
voltage drop
Ipk = 200 A, TJ = 25 °C, tp = 400 μs single
junction
VFM
VISOL
V
TJ = 25 °C, all terminal shorted
f = 50 Hz, t = 1 s
RMS isolation voltage
4000
THERMAL AND MECHANICAL SPECIFICATIONS
VALUES
130MT.K
VALUES
160MT.K
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
Maximum junction operating
and storage temperature range
TJ, TStg
-40 to 150
°C
DC operation per module
0.16
0.93
0.18
1.08
0.12
0.73
0.15
0.88
DC operation per junction
Maximum thermal resistance,
junction to case
RthJC
120° rect. conduction angle per module
120° rect. conduction angle per junction
K/W
Maximum thermal resistance,
case to heatsink
Per module
Mounting surface smooth, flat and greased
RthCS
0.03
to heatsink
4 to 6
3 to 4
176
A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of the
compound. Lubricated threads.
Mounting
Nm
g
torque 10 %
to terminal
Approximate weight
Revision: 17-Aug-17
Document Number: 94354
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-130-160MT..KPbF Series
www.vishay.com
Vishay Semiconductors
150
140
130
120
110
100
90
1000
130MT..K Series
100
10
120° (Rect)
TJ = 25 °C
TJ = 150 °C
+
-
80
~
70
130MT..K Series
Per junction
60
1
50
0
0
1
20 40 60 80 100 120 140 160 180
0
1.0
2.0
3.0
4.0
5.0
Total Output Current (A)
Instantaneous Forward Voltage (V)
Fig. 2 - Forward Voltage Drop Characteristics
Fig. 1 - Current Rating Characteristics
500
450
400
350
300
250
200
150
100
50
500
450
400
350
300
250
200
150
100
50
130MT..K Series
TJ = 150 °C
120°
(Rect)
0
0
20
40
60
80 100 120 140 160
0
25
50
75
100
125
150
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Total Power Loss Characteristics
1000
900
800
700
600
500
400
300
200
1200
1100
1000
900
800
700
600
500
400
300
200
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150°C
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
130MT..K Series
130MT..K Series
10
100
0.01
0.1
1.0
Number of Equal Amplitude
Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 4 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
Revision: 17-Aug-17
Document Number: 94354
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-130-160MT..KPbF Series
www.vishay.com
Vishay Semiconductors
150
140
130
120
110
100
90
1000
160MT..K Series
100
10
120°
(Rect)
TJ = 25 °C
TJ = 150 °C
+
-
80
~
70
160MT..K Series
Per junction
60
50
1
0
0
1
40
80
120
160
200
240
0
1
2
3
4
5
Total Output Current (A)
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 6 - Current Ratings Characteristic
600
500
400
300
200
100
0
600
500
400
300
200
100
0
160MT..K Series
TJ = 150 °C
120°
(Rect)
25
50
75
40
80
120
160
200
0
100
125
150
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - Total Power Loss Characteristics
1300
1200
1100
1000
900
1500
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
1400
1300
1200
1100
1000
900
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
No voltage reapplied
Rated VRRM reapplied
800
800
700
700
600
600
500
500
160MT..K Series
160MT..K Series
400
400
300
300
10
100
0.01
0.1
1.0
Number of Equal Amplitude
Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 10 - Maximum Non-Repetitive Surge Current
Revision: 17-Aug-17
Document Number: 94354
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-130-160MT..KPbF Series
www.vishay.com
Vishay Semiconductors
10
1
Steady state value
R
thJC = 0.93 K/W
thJC = 0.73 K/W
R
130MT..K Series
160MT..K Series
(DC operation)
0.1
0.01
Per junction
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 11 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
16
0
MT 160
K
PbF
1
2
3
4
5
6
-
-
Vishay Semiconductors product
1
2
Current rating code: 13 = 130 A (average)
16 = 160 A (average)
-
-
-
-
Three phase diodes bridge
3
4
5
6
Essential part number
Voltage code x 10 = VRRM (see Voltage Ratings table)
PbF = Lead (Pb)-free
Note
To order the optional hardware go to: www.vishay.com/doc?95172
•
CIRCUIT CONFIGURATION
+
D
A
B
C
~
E
F
-
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95004
Revision: 17-Aug-17
Document Number: 94354
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
MTK (with and without optional barrier)
DIMENSIONS WITH OPTIONAL BARRIERS in millimeters (inches)
Fast-on tab 208 x ꢀ08 (type 11ꢀꢁ
Screws M. x ꢀ08 length 1ꢀ
24 ꢀ0.
(ꢀ094 ꢀ0ꢀ2ꢁ
3. ꢀ03
(1038 ꢀ0ꢀ1ꢁ
.
ꢀ03
7. ꢀ0.
(ꢀ02 ꢀ0ꢀ1ꢁ
(209. ꢀ0ꢀ2ꢁ
A
B
C
1
3
2
4
.
7
6
8
D
E
F
46 ꢀ03
(1081 ꢀ0ꢀ1ꢁ
8ꢀ ꢀ03
(301. ꢀ0ꢀ1ꢁ
94 ꢀ03
(307 ꢀ0ꢀ1ꢁ
Document Number: 95004
Revision: 27-Aug-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Outline Dimensions
Vishay Semiconductors
MTK (with and without optional barrier)
DIMENSIONS WITHOUT OPTIONAL BARRIERS in millimeters (inches)
Screws M. x ꢀ08 length 1ꢀ
Fast-on tab 208 x ꢀ08 (type 11ꢀꢁ
24 ꢀ0.
(ꢀ094 ꢀ0ꢀ2ꢁ
3. ꢀ03
(1038 ꢀ0ꢀ1ꢁ
7. ꢀ0.
.
ꢀ03
(209. ꢀ0ꢀ2ꢁ
(ꢀ02 ꢀ0ꢀ1ꢁ
A
B
C
1
3
2
4
.
7
6
8
D
E
F
46 ꢀ03
(1081 ꢀ0ꢀ1ꢁ
8ꢀ ꢀ03
(301. ꢀ0ꢀ1ꢁ
94 ꢀ03
(307 ꢀ0ꢀ1ꢁ
www.vishay.com
2
For technical questions, contact: indmodules@vishay.com
Document Number: 95004
Revision: 27-Aug-07
Legal Disclaimer Notice
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
Document Number: 91000
1
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