VS-160MT100KPBF [VISHAY]

IC BRIDGE 3PH 160A 1000V MTK;
VS-160MT100KPBF
型号: VS-160MT100KPBF
厂家: VISHAY    VISHAY
描述:

IC BRIDGE 3PH 160A 1000V MTK

文件: 总8页 (文件大小:171K)
中文:  中文翻译
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VS-130-160MT..KPbF Series  
www.vishay.com  
Vishay Semiconductors  
Three Phase Bridge, 130 A to 160 A  
(Power Modules)  
FEATURES  
• Package fully compatible with the industry  
standard INT-A-PAK power modules series  
• High thermal conductivity package, electrically  
insulated case  
• Excellent power volume ratio  
• 4000 VRMS isolating voltage  
• UL E78996 approved  
• Designed and qualified for industrial level  
MTK  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
DESCRIPTION  
IO  
130 A to 160 A  
A range of extremely compact, encapsulated three phase  
bridge rectifiers offering efficient and reliable operation.  
They are intended for use in general purpose and heavy duty  
applications.  
VRRM  
800 V to 1600 V  
MTK  
Package  
Circuit configuration  
Three phase bridge  
MAJOR RATINGS AND CHARACTERISTICS  
VALUES  
130MT.K  
VALUES  
UNITS  
SYMBOL  
CHARACTERISTICS  
160MT.K  
130 (160)  
85 (62)  
1130  
160 (200)  
85 (60)  
1430  
A
IO  
TC  
°C  
50 Hz  
60 Hz  
50 Hz  
60 Hz  
IFSM  
I2t  
A
1180  
1500  
6400  
10 200  
9300  
A2s  
5800  
I2t  
VRRM  
TStg  
TJ  
64 000  
102 000  
A2s  
Range  
Range  
800 to 1600  
-40 to 150  
-40 to 150  
V
°C  
ELECTRICAL SPECIFICATIONS  
VOLTAGE RATINGS  
VRRM, MAXIMUM REPETITIVE  
PEAK REVERSE VOLTAGE  
V
VRSM, MAXIMUM NON-REPETITIVE  
IRRM MAXIMUM  
AT TJ = MAXIMUM  
mA  
VOLTAGE  
CODE  
TYPE NUMBER  
PEAK REVERSE VOLTAGE  
V
80  
800  
900  
100  
120  
140  
160  
1000  
1200  
1400  
1600  
1100  
1300  
1500  
1700  
VS-130MT.K  
VS-160MT.K  
10  
Revision: 17-Aug-17  
Document Number: 94354  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-130-160MT..KPbF Series  
www.vishay.com  
Vishay Semiconductors  
FORWARD CONDUCTION  
VALUES  
130MT.K  
VALUES  
160MT.K  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
UNITS  
130 (160)  
85 (62)  
1130  
160 (200)  
85 (60)  
1430  
A
Maximum DC output current  
IO  
120° rect. conduction angle  
at case temperature  
°C  
t = 10 ms  
No voltage  
reapplied  
t = 8.3 ms  
Maximum peak, one-cycle   
forward, non-repetitive surge  
current  
1180  
1500  
IFSM  
A
t = 10 ms  
950  
1200  
100 % VRRM  
reapplied  
t = 8.3 ms  
1000  
1260  
Initial   
TJ = TJ maximum  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
6400  
10 200  
9300  
No voltage  
reapplied  
5800  
Maximum I2t for fusing  
I2t  
A2s  
4500  
7200  
100 % VRRM  
reapplied  
4100  
6600  
Maximum I2t for fusing  
I2t  
t = 0.1 ms to 10 ms, no voltage reapplied  
64 000  
102 000  
A2s  
Low level value of   
(16.7 % x x IT(AV) < I < x IT(AV)),   
VT(TO)1  
0.78  
0.99  
4.59  
4.17  
1.63  
0.81  
1.04  
3.52  
3.13  
1.49  
threshold voltage  
TJ maximum  
V
High level value of  
threshold voltage  
VT(TO)2  
rf1  
(I > x IT(AV)), TJ maximum  
Low level value of forward slope  
resistance  
16.7 % x x IT(AV) < I < x IT(AV)),   
TJ maximum  
m  
High level of forward slope  
resistance  
rf2  
(I > x IT(AV)), TJ maximum  
Maximum forward   
voltage drop  
Ipk = 200 A, TJ = 25 °C, tp = 400 μs single  
junction  
VFM  
VISOL  
V
TJ = 25 °C, all terminal shorted  
f = 50 Hz, t = 1 s  
RMS isolation voltage  
4000  
THERMAL AND MECHANICAL SPECIFICATIONS  
VALUES  
130MT.K  
VALUES  
160MT.K  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
UNITS  
Maximum junction operating  
and storage temperature range  
TJ, TStg  
-40 to 150  
°C  
DC operation per module  
0.16  
0.93  
0.18  
1.08  
0.12  
0.73  
0.15  
0.88  
DC operation per junction  
Maximum thermal resistance,  
junction to case  
RthJC  
120° rect. conduction angle per module  
120° rect. conduction angle per junction  
K/W  
Maximum thermal resistance,  
case to heatsink  
Per module  
Mounting surface smooth, flat and greased  
RthCS  
0.03  
to heatsink  
4 to 6  
3 to 4  
176  
A mounting compound is recommended and  
the torque should be rechecked after a period  
of 3 hours to allow for the spread of the  
compound. Lubricated threads.  
Mounting  
Nm  
g
torque 10 %  
to terminal  
Approximate weight  
Revision: 17-Aug-17  
Document Number: 94354  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-130-160MT..KPbF Series  
www.vishay.com  
Vishay Semiconductors  
150  
140  
130  
120  
110  
100  
90  
1000  
130MT..K Series  
100  
10  
120° (Rect)  
TJ = 25 °C  
TJ = 150 °C  
+
-
80  
~
70  
130MT..K Series  
Per junction  
60  
1
50  
0
0
1
20 40 60 80 100 120 140 160 180  
0
1.0  
2.0  
3.0  
4.0  
5.0  
Total Output Current (A)  
Instantaneous Forward Voltage (V)  
Fig. 2 - Forward Voltage Drop Characteristics  
Fig. 1 - Current Rating Characteristics  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
130MT..K Series  
TJ = 150 °C  
120°  
(Rect)  
0
0
20  
40  
60  
80 100 120 140 160  
0
25  
50  
75  
100  
125  
150  
Total Output Current (A)  
Maximum Allowable Ambient Temperature (°C)  
Fig. 3 - Total Power Loss Characteristics  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
1200  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
At any rated load condition and with  
rated VRRM applied following surge.  
Initial TJ = 150°C  
Maximum non-repetitive surge current  
versus pulse train duration.  
Initial TJ = 150 °C  
No voltage reapplied  
Rated VRRM reapplied  
at 60 Hz 0.0083 s  
at 50 Hz 0.0100 s  
130MT..K Series  
130MT..K Series  
10  
100  
0.01  
0.1  
1.0  
Number of Equal Amplitude  
Half Cycle Current Pulses (N)  
Pulse Train Duration (s)  
Fig. 4 - Maximum Non-Repetitive Surge Current  
Fig. 5 - Maximum Non-Repetitive Surge Current  
Revision: 17-Aug-17  
Document Number: 94354  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-130-160MT..KPbF Series  
www.vishay.com  
Vishay Semiconductors  
150  
140  
130  
120  
110  
100  
90  
1000  
160MT..K Series  
100  
10  
120°  
(Rect)  
TJ = 25 °C  
TJ = 150 °C  
+
-
80  
~
70  
160MT..K Series  
Per junction  
60  
50  
1
0
0
1
40  
80  
120  
160  
200  
240  
0
1
2
3
4
5
Total Output Current (A)  
Instantaneous Forward Voltage (V)  
Fig. 7 - Forward Voltage Drop Characteristics  
Fig. 6 - Current Ratings Characteristic  
600  
500  
400  
300  
200  
100  
0
600  
500  
400  
300  
200  
100  
0
160MT..K Series  
TJ = 150 °C  
120°  
(Rect)  
25  
50  
75  
40  
80  
120  
160  
200  
0
100  
125  
150  
Total Output Current (A)  
Maximum Allowable Ambient Temperature (°C)  
Fig. 8 - Total Power Loss Characteristics  
1300  
1200  
1100  
1000  
900  
1500  
At any rated load condition and with  
rated VRRM applied following surge.  
Initial TJ = 150 °C  
Maximum non-repetitive surge current  
versus pulse train duration.  
Initial TJ = 150 °C  
1400  
1300  
1200  
1100  
1000  
900  
at 60 Hz 0.0083 s  
at 50 Hz 0.0100 s  
No voltage reapplied  
Rated VRRM reapplied  
800  
800  
700  
700  
600  
600  
500  
500  
160MT..K Series  
160MT..K Series  
400  
400  
300  
300  
10  
100  
0.01  
0.1  
1.0  
Number of Equal Amplitude  
Half Cycle Current Pulses (N)  
Pulse Train Duration (s)  
Fig. 9 - Maximum Non-Repetitive Surge Current  
Fig. 10 - Maximum Non-Repetitive Surge Current  
Revision: 17-Aug-17  
Document Number: 94354  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-130-160MT..KPbF Series  
www.vishay.com  
Vishay Semiconductors  
10  
1
Steady state value  
R
thJC = 0.93 K/W  
thJC = 0.73 K/W  
R
130MT..K Series  
160MT..K Series  
(DC operation)  
0.1  
0.01  
Per junction  
0.001  
0.01  
0.1  
1
10  
Square Wave Pulse Duration (s)  
Fig. 11 - Thermal Impedance ZthJC Characteristics  
ORDERING INFORMATION TABLE  
Device code  
VS-  
16  
0
MT 160  
K
PbF  
1
2
3
4
5
6
-
-
Vishay Semiconductors product  
1
2
Current rating code: 13 = 130 A (average)  
16 = 160 A (average)  
-
-
-
-
Three phase diodes bridge  
3
4
5
6
Essential part number  
Voltage code x 10 = VRRM (see Voltage Ratings table)  
PbF = Lead (Pb)-free  
Note  
To order the optional hardware go to: www.vishay.com/doc?95172  
CIRCUIT CONFIGURATION  
+
D
A
B
C
~
E
F
-
LINKS TO RELATED DOCUMENTS  
Dimensions  
www.vishay.com/doc?95004  
Revision: 17-Aug-17  
Document Number: 94354  
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Outline Dimensions  
Vishay Semiconductors  
MTK (with and without optional barrier)  
DIMENSIONS WITH OPTIONAL BARRIERS in millimeters (inches)  
Fast-on tab 208 x ꢀ08 (type 11ꢀꢁ  
Screws M. x ꢀ08 length 1ꢀ  
24 ꢀ0.  
(ꢀ094 ꢀ0ꢀ2ꢁ  
3. ꢀ03  
(1038 ꢀ0ꢀ1ꢁ  
.
ꢀ03  
7. ꢀ0.  
(ꢀ02 ꢀ0ꢀ1ꢁ  
(209. ꢀ0ꢀ2ꢁ  
A
B
C
1
3
2
4
.
7
6
8
D
E
F
46 ꢀ03  
(1081 ꢀ0ꢀ1ꢁ  
8ꢀ ꢀ03  
(301. ꢀ0ꢀ1ꢁ  
94 ꢀ03  
(307 ꢀ0ꢀ1ꢁ  
Document Number: 95004  
Revision: 27-Aug-07  
For technical questions, contact: indmodules@vishay.com  
www.vishay.com  
1
Outline Dimensions  
Vishay Semiconductors  
MTK (with and without optional barrier)  
DIMENSIONS WITHOUT OPTIONAL BARRIERS in millimeters (inches)  
Screws M. x ꢀ08 length 1ꢀ  
Fast-on tab 208 x ꢀ08 (type 11ꢀꢁ  
24 ꢀ0.  
(ꢀ094 ꢀ0ꢀ2ꢁ  
3. ꢀ03  
(1038 ꢀ0ꢀ1ꢁ  
7. ꢀ0.  
.
ꢀ03  
(209. ꢀ0ꢀ2ꢁ  
(ꢀ02 ꢀ0ꢀ1ꢁ  
A
B
C
1
3
2
4
.
7
6
8
D
E
F
46 ꢀ03  
(1081 ꢀ0ꢀ1ꢁ  
8ꢀ ꢀ03  
(301. ꢀ0ꢀ1ꢁ  
94 ꢀ03  
(307 ꢀ0ꢀ1ꢁ  
www.vishay.com  
2
For technical questions, contact: indmodules@vishay.com  
Document Number: 95004  
Revision: 27-Aug-07  
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Vishay  
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED  
Revision: 09-Jul-2021  
Document Number: 91000  
1

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