VS-181RKI40 [VISHAY]
Silicon Controlled Rectifier,;
| 型号： | VS-181RKI40 |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, |
| 文件： | 总8页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-180RKI...PbF, VS-181RKI...PbF Series
www.vishay.com
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 180 A
FEATURES
• Hermetic glass-metal seal
• International standard case TO-209AB (TO-93)
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TO-209AB (TO-93)
TYPICAL APPLICATIONS
• DC motor controls
PRODUCT SUMMARY
• Controlled DC power supplies
IT(AV)
DRM/VRRM
VTM
180 A
400 V, 800 V, 1000 V
1.35 V
• AC controllers
V
IGT
65 mA
TJ
-40 °C to 125 °C
TO-209AB (TO-93)
Single SCR
Package
Diode variation
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
180
UNITS
A
IT(AV)
TC
80
°C
IT(RMS)
285
50 Hz
60 Hz
50 Hz
60 Hz
3800
A
ITSM
4000
72
I2t
kA2s
66
V
DRM/VRRM
400 to 1000
100
V
tq
Typical
μs
°C
TJ
-40 to 125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VDRM/VRRM, MAXIMUM REPETITIVE VRSM, MAXIMUM NON-REPETITIVE
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VOLTAGE
CODE
PART NUMBER
PEAK AND OFF-STATE VOLTAGE
V
PEAK VOLTAGE
V
40
80
400
800
500
900
VS-180RKI
VS-181RKI
30
100
1000
1100
Revision: 11-Mar-14
Document Number: 94382
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-180RKI...PbF, VS-181RKI...PbF Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
IT(AV)
TEST CONDITIONS
180° conduction, half sine wave
DC at 79 °C case temperature
VALUES
180
UNITS
A
Maximum average on-state current
at case temperature
80
°C
Maximum RMS on-state current
IRMS
285
t = 10 ms
3800
4000
3500
3660
72
No voltage
reapplied
t = 8.3 ms
A
Maximum peak, one-cycle
non-repetitive surge current
ITSM
t = 10 ms
100 % VRRM
reapplied
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Sinusoidal half wave,
intial TJ = TJ maximum
No voltage
reapplied
66
Maximum I2t for fusing
I2t
kA2s
61
100 % VRRM
reapplied
56
Maximum I2t for fusing
I2t
VT(TO)1
VT(TO)2
rt1
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
720
kA2s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
0.83
0.89
0.92
0.81
1.35
600
V
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
m
V
rt2
VTM
IH
Ipk = 570 A, TJ = TJ maximum, tp = 10 ms sine pulse
Maximum holding current
TJ = 25 °C, anode supply 12 V resistive load
mA
Typical latching current
IL
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of
rise of turned-on current
Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM
dI/dt
300
A/μs
Gate current 1 A, dIg/dt = 1 A/μs
Typical delay time
td
tq
1.0
Vd = 0.67 % VDRM, TJ = 25 °C
μs
ITM = 50 A, TJ = TJ maximum, dI/dt = 10 A/μs,
Typical turn-off time
100
VR = 100 V, dV/dt = 20 V/μs
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
TJ = TJ maximum rated VDRM/VRRM applied
500
V/μs
rise of off-state voltage
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
30
mA
Revision: 11-Mar-14
Document Number: 94382
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-180RKI...PbF, VS-181RKI...PbF Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
TJ = TJ maximum, tp 5 ms
UNITS
TYP. MAX.
Maximum peak gate power
PGM
PG(AV)
IGM
10
2.0
3.0
20
W
A
Maximum average gate power
TJ = TJ maximum, f = 50 Hz, d% = 50
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
+ VGM
- VGM
TJ = TJ maximum, tp 5 ms
V
5.0
TJ = - 40 °C
TJ = 25 °C
130
65
-
150
-
DC gate current required to trigger
DC gate voltage required to trigger
IGT
mA
V
Maximum required gate trigger/
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
35
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
2.0
1.2
0.9
-
VGT
2.5
-
Maximum gate current/voltage not
to trigger is the maximum value
TJ = TJ maximum which will not trigger any unit with
rated VDRM anode to cathode
applied
DC gate current not to trigger
DC gate voltage not to trigger
IGD
10
mA
V
VGD
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
-40 to 125
-40 to 150
0.15
UNITS
Maximum operating junction
temperature range
TJ
°C
Maximum storage temperature range
TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
K/W
Maximum thermal resistance,
junction to ambient
RthCS
Mounting surface, smooth, flat and greased
Non-lubricated threads
0.04
31
(275)
N · m
(lbf · in)
Mounting force, 10 %
24.5
(210)
Lubricated threads
Approximate weight
Case style
280
g
See dimensions - link at the end of datasheet
TO-209AB (TO-93)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
120°
90°
0.050
0.063
0.080
0.118
0.225
0.032
0.059
0.082
0.124
0.228
TJ = TJ maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 11-Mar-14
Document Number: 94382
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-180RKI...PbF, VS-181RKI...PbF Series
www.vishay.com
Vishay Semiconductors
130
120
110
100
90
130
RthJC (DC) = 0.15 K/W
RthJC (DC) = 0.15 K/W
120
110
Ø
Ø
Conduction period
Conduction angle
100
90
80
70
30°
DC
80
30°
60°
120°
60°
120°
180°
200
90°
180°
90°
150
70
0
50
100
250
300
0
20 40 60 80 100 120 140 160 180 200
Average On-State Current (A)
94382_01
Average On-State Current (A)
94382_02
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
240
220
200
180
160
140
120
100
80
240
220
200
180
160
140
120
100
80
180°
120°
90°
60°
30°
RMS limit
60
60
Ø
40
Conduction angle
40
20
20
TJ = 125 °C
0
0
0
20 40 60 80 100 120 140 160 180
0
25
50
75
100
125
94382_03a
Average On-State Current (A)
Maximum Allowable
94382_03b
Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
350
300
250
200
150
100
50
350
300
250
DC
180°
120°
90°
60°
30°
RMS limit
200
150
100
50
Ø
Conduction period
TJ = 125 °C
0
0
0
50
100
150
200
250
300
0
25
50
75
100
125
94382_04a
Average On-State Current (A)
94382_04b
Maximum Allowable
Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
Revision: 11-Mar-14
Document Number: 94382
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-180RKI...PbF, VS-181RKI...PbF Series
www.vishay.com
Vishay Semiconductors
4000
3500
3000
2500
2000
1500
4000
Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 125 °C
3500
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
3000
2500
2000
1500
1
10
100
0.01
0.1
1
Number of Equal Amplitude Half
Pulse Train Duration (s)
94382_05
94382_06
Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10 000
TJ = 25 °C
1000
TJ = 125 °C
100
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous On-State Voltage (V)
94382_07
Fig. 7 - On-State Voltage Drop Characteristics
1
0.1
Steady state value
RthJC = 0.15 K/W
(DC operation)
0.01
0.001
0.001
0.01
0.1
1
10
94382_08
Square Wave Pulse Duration (s)
Fig. 8 - Thermal impedance ZthJC Characteristics
Revision: 11-Mar-14
Document Number: 94382
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-180RKI...PbF, VS-181RKI...PbF Series
www.vishay.com
Vishay Semiconductors
100
(1) PGM = 12 W, tp = 5 ms
(2) PGM = 30 W, tp = 2 ms
(3) PGM = 60 W, tp = 1 ms
Rectangular gate pulse
(a) Recommended load line for
rated dI/dt: 20 V, 30 Ω,
tr ≤ 0.5 μs, tp ≥ 6 μs
(b)
(4) PGM = 200 W, tp = 300 μs
(b) Recommended load line for
≤ 30 % rated dI/dt: 15 V, 40 Ω,
tr ≤ 1 μs, tp ≥ 6 μs
10
(a)
1
(1)
(2)
(3)
(4)
VGD
Frequency limited by PG(AV)
IGD
0.01
0.1
0.001
0.1
1
10
100
1000
94382_09
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
18
1
RKI 100 PbF
1
2
3
4
5
6
1
2
3
-
-
-
Vishay Semiconductors product
IT(AV) rated average output current (rounded/10)
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
Thyristor
4
5
6
-
-
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95077
Revision: 11-Mar-14
Document Number: 94382
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-209AB (TO-93)
DIMENSIONS in millimeters (inches)
Glass metal seal
19 (0.75) MAX.
Ø 8.5 (0.33)
Ø 4.3 (0.17)
Red silicon rubber
C.S. 0.51 mm2
(0.0008 s.i.)
Red cathode
213.5 10
(8.41 0.39)
238.5 10
(9.39 0.39)
White gate
Red shrink
75 (2.95)
MIN.
White shrink
Ø 28.5 (1.12)
28.5 (1.12)
MAX.
MAX.
16 (0.63) MAX.
21 (0.83)
MAX.
SW 32
3/4"-16UNF-2A
35 (1.38)
MAX.
0° to 15°
Fast-on terminals
AMP. 280000-1
REF-250
4 MAX.
38 MAX.
23 MIN.
Flexible lead
C.S. 35 mm2
(0.054 s.i.)
Document Number: 95077
Revision: 19-May-10
For technical questions, contact: indmodules@vishay.com
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1
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Revision: 02-Oct-12
Document Number: 91000
1
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