VS-20TQ035SHM3 [VISHAY]
High Performance Schottky Rectifier, 20 A;型号: | VS-20TQ035SHM3 |
厂家: | VISHAY |
描述: | High Performance Schottky Rectifier, 20 A |
文件: | 总7页 (文件大小:165K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VS-20TQ035SHM3, VS-20TQ040SHM3, VS-20TQ045SHM3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 20 A
FEATURES
Base
cathode
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
2
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
1
3
N/C
Anode
• Guard ring for enhanced ruggedness and long term
reliability
D2PAK (TO-263AB)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
PRIMARY CHARACTERISTICS
• Meets JESD 201 class 1A whisker test
• AEC-Q101 qualified
IF(AV)
20 A
VR
35 V, 40 V, 45 V
0.51 V
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
VF at IF
I
RMtyp.
105 mA at 125 °C
150 °C
TJ max.
EAS
DESCRIPTION
27 mJ
The VS-20TQ... Schottky rectifier series has been optimized
for very low forward voltage drop, with moderate leakage.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
Package
D2PAK (TO-263AB)
Circuit configuration
Single
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
Rectangular waveform
Range
VALUES
20
UNITS
IF(AV)
VRRM
IFSM
VF
A
V
35 to 45
1800
tp = 5 μs sine
20 Apk, TJ = 125 °C
Range
A
0.51
V
TJ
-55 to +150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL VS-20TQ035SHM3
VS-20TQ040SHM3
VS-20TQ045SHM3
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
35
40
45
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TC = 116 °C, rectangular waveform
VALUES
UNITS
Maximum average forward current,
see fig. 5
IF(AV)
20
A
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
1800
400
27
Maximum peak one cycle non-repetitive
surge current, see fig. 7
IFSM
VRRM applied
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TJ = 25 °C, IAS = 4 A, L = 3.40 mH
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
4
Revision: 28-Jul-2020
Document Number: 96309
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20TQ035SHM3, VS-20TQ040SHM3, VS-20TQ045SHM3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
TJ = 25 °C
VALUES
0.57
0.73
0.51
0.67
2.7
UNITS
20 A
40 A
Maximum forward voltage drop
See fig. 1
(1)
VFM
V
20 A
TJ = 125 °C
40 A
TJ = 25 °C
TJ = 125 °C
TJ = 125 °C
(1)
Maximum reverse leakage current
IRM
VR = Rated VR
VR = Rated VR
mA
150
(1)
Typical reverse leakage current
Maximum junction capacitance
Typical series inductance
IRM
105
mA
pF
CT
LS
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
1400
8.0
nH
Maximum voltage rate of change
dV/dt
10 000
V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
-55 to +150
°C
Maximum thermal resistance,
junction to case
DC operation
See fig. 4
RthJC
RthCS
1.50
0.50
°C/W
Typical thermal resistance,
case to heatsink
Mounting surface, smooth and greased
2
g
Approximate weight
Mounting torque
0.07
oz.
minimum
maximum
6 (5)
kgf ⋅ cm
(lbf ⋅ in)
12 (10)
20TQ035SH
Marking device
Case style D2PAK (TO-263AB)
20TQ040SH
20TQ045SH
Revision: 28-Jul-2020
Document Number: 96309
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20TQ035SHM3, VS-20TQ040SHM3, VS-20TQ045SHM3
www.vishay.com
Vishay Semiconductors
1000
100
10
1000
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
0.1
TJ = 75 °C
TJ = 50 °C
1
TJ = 25 °C
0.01
0.001
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0
5
10 15 20 25 30 35 40 45
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
10 000
TJ = 25 °C
100
50
0
10
20
30
40
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
0.1
t1
D = 0.50
D = 0.33
t2
D = 0.25
D = 0.17
D = 0.08
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
Single pulse
(thermal resistance)
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 28-Jul-2020
Document Number: 96309
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20TQ035SHM3, VS-20TQ040SHM3, VS-20TQ045SHM3
www.vishay.com
Vishay Semiconductors
155
145
135
125
115
18
D = 0.08
16
14
12
10
8
20TQ
D = 0.17
D = 0.25
D = 0.33
D = 0.50
RthJC (DC) = 1.50 °C/W
RMS limit
DC
6
DC
15
4
2
0
0
5
10
15
20
25
30
0
5
10
20
25
30
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
10 000
At any rated load condition
and with rated VRRM applied
following surge
1000
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
IRFP460
D.U.T.
Freewheel
diode
Rg = 25 Ω
Vd = 25 V
+
Current
monitor
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Revision: 28-Jul-2020
Document Number: 96309
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20TQ035SHM3, VS-20TQ040SHM3, VS-20TQ045SHM3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
20
T
Q
045
S
TRL
H
M3
1
2
3
4
5
6
7
8
9
1
-
-
-
-
-
-
-
Vishay Semiconductors product
Current rating (20 A)
2
3
4
5
6
7
Package: T = TO-220
Schottky “Q” series
035 = 35 V
040 = 40 V
045 = 45 V
Voltage ratings
S = D2PAK
None = tube (50 pieces)
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
H = AEC-Q101 qualified
8
9
-
-
M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER REEL
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tubes
VS-20TQ035SHM3
50
800
800
50
1000
800
VS-20TQ035STRRHM3
VS-20TQ035STRLHM3
VS-20TQ040SHM3
13" diameter plastic tape and reel
13" diameter plastic tape and reel
Antistatic plastic tubes
800
1000
800
VS-20TQ040STRRHM3
VS-20TQ040STRLHM3
VS-20TQ045SHM3
800
800
50
13" diameter plastic tape and reel
13" diameter plastic tape and reel
Antistatic plastic tubes
800
1000
800
VS-20TQ045STRRHM3
VS-20TQ045STRLHM3
800
800
13" diameter plastic tape and reel
13" diameter plastic tape and reel
800
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95046
Part marking information
Packaging information
www.vishay.com/doc?95444
www.vishay.com/doc?95032
Revision: 28-Jul-2020
Document Number: 96309
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2PAK (SMD-220)
B
A
Pad layout
A
(2)(3)
E
A
(E)
c2
11.00
MIN.
(0.43)
(3)
D
L1
4
2
9.65
MIN.
(0.38)
(D1) (3)
Detail A
17.90 (0.70)
15.00 (0.625)
H
(2)
1
3
3.81
MIN.
L2
(0.15)
B
B
2.32
MIN.
(0.08)
A
B
2.64 (0.103)
2.41 (0.096)
(3)
E1
2 x b2
2 x b
C
c
View A - A
0.004 M
Base
Metal
0.010 M
M
B
A
Plating
(4)
b1, b3
2 x
e
H
Gauge
plane
(4)
c1
(c)
B
0° to 8°
Seating
plane
L3
A1
Lead tip
(b, b2)
L
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
MILLIMETERS
INCHES
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
MAX.
4.83
0.254
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
MIN.
6.86
9.65
7.90
MAX.
8.00
MIN.
MAX.
0.315
0.420
0.346
A
A1
b
D1
E
0.270
0.380
0.311
3
2, 3
3
10.67
8.80
E1
e
b1
b2
b3
c
4
4
4
2
2.54 BSC
0.100 BSC
H
14.61
1.78
-
15.88
2.79
1.65
1.78
0.575
0.070
-
0.625
0.110
0.066
0.070
L
L1
L2
L3
L4
3
c1
c2
D
1.27
0.050
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2021
Document Number: 91000
1
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