VS-249NQ150PBF [VISHAY]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 150V V(RRM), Silicon, ROHS COMPLIANT, D-67, HALF PAK-1;![VS-249NQ150PBF](http://pdffile.icpdf.com/pdf2/p00258/img/icpdf/VS-249NQ150P_1559032_icpdf.jpg)
型号: | VS-249NQ150PBF |
厂家: | ![]() |
描述: | Rectifier Diode, Schottky, 1 Phase, 1 Element, 150V V(RRM), Silicon, ROHS COMPLIANT, D-67, HALF PAK-1 局域网 二极管 |
文件: | 总6页 (文件大小:142K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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VS-249NQ150PbF
Vishay Semiconductors
www.vishay.com
High Performance Schottky Rectifier, 240 A
FEATURES
• 175 °C TJ operation
Lug terminal
anode
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
Base
cathode
• Designed and qualified for industrial level
• UL approved file E222165
HALF-PAK (D-67)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
DESCRIPTION
IF(AV)
240 A
150 V
The VS-249NQ.. high current Schottky rectifier module
series has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows
for reliable operation up to 175 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
VR
Package
HALF-PAK (D-67)
Single
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
240
UNITS
Rectangular waveform
A
V
150
tp = 5 μs sine
240 Apk, TJ = 125 °C
Range
20 000
0.78
A
VF
V
TJ
-55 to +175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VR
VS-249NQ150PbF
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
150
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TC = 121 °C, rectangular waveform
VALUES
UNITS
Maximum average forward current
See fig. 5
IF(AV)
240
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
5 μs sine or 3 μs rect. pulse
20 000
Following any rated
load condition and with
rated VRRM applied
IFSM
10 ms sine or 6 ms rect. pulse
TJ = 25 °C, IAS = 5.5 A, L = 1 mH
2300
15
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1
Revision: 08-May-17
Document Number: 94172
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-249NQ150PbF
Vishay Semiconductors
www.vishay.com
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
1.21
UNITS
240 A
480 A
240 A
480 A
TJ = 25 °C
1.65
Maximum forward voltage drop per leg
See fig. 1
(1)
VFM
V
0.78
TJ = 125 °C
0.94
TJ = 25 °C
6
Maximum reverse leakage current per leg
See fig. 2
IRM
VR = Rated VR
mA
TJ = 125 °C
85
Maximum junction capacitance
Typical series inductance
CT
LS
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
From top of terminal hole to mounting plane
Rated VR
6000
5.0
pF
nH
Maximum voltage rate of change
dV/dt
10 000
V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage temperature range
TJ, TStg
-55 to 175
°C
DC operation
See fig. 4
Maximum thermal resistance, junction to case
Typical thermal resistance, case to heatsink
RthJC
0.19
°C/W
RthCS
Mounting surface, smooth and greased
0.05
30
g
Approximate weight
1.06
oz.
minimum
3 (26.5)
4 (35.4)
3.4 (30)
5 (44.2)
Mounting torque
maximum
minimum
maximum
N m
Non-lubricated threads
(lbf in)
Terminal torque
Case style
HALF-PAK module
1000
1000
TJ = 175 °C
TJ = 175 °C
100
TJ = 150 °C
TJ = 125 °C
100
10
1
10
TJ = 100 °C
1
TJ = 75 °C
TJ = 125 °C
0.1
TJ = 50 °C
TJ = 25 °C
TJ = 25 °C
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
0
30
60
90
120
150
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 08-May-17
Document Number: 94172
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-249NQ150PbF
Vishay Semiconductors
www.vishay.com
10 000
1000
100
TJ = 25 °C
0
30
60
90
120
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
0.01
0.001
Single pulse
(thermal resistance)
D = 0.20
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
200
180
160
140
120
100
80
250
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
200
DC
150
100
50
RMS limit
Square wave (D = 0.50)
80 % rated VR applied
DC
See note (1)
60
0
0
50
100
150 200
250 300
350
0
50
100
150
200
250
300
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Revision: 08-May-17
Document Number: 94172
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-249NQ150PbF
Vishay Semiconductors
www.vishay.com
100 000
10 000
1000
At any rated load condition
and with rated VRRM applied
following surge
10
100
1000
10 000
t
p - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
IRFP460
D.U.T.
Freewheel
diode
Rg = 25 Ω
Vd = 25 V
+
Current
monitor
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
ORDERING INFORMATION TABLE
Device code
VS- 24
9
N
Q
150 PbF
1
2
3
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Vishay Semiconductors product
Average current rating (x 10)
Product silicon identification
N = not isolated
Q = Schottky rectifier diode
Voltage rating (150 = 150 V)
Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95020
Revision: 08-May-17
Document Number: 94172
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
D-67 HALF-PAK
DIMENSIONS in millimeters (inches)
24ꢀ4 (0ꢀ96ꢂ
13 (0ꢀꢁ1ꢂ
17ꢀꢁ (0ꢀ69ꢂ
16ꢀꢁ (0ꢀ6ꢁꢂ
ꢁ (0ꢀ20ꢂ
4 (0ꢀ16ꢂ
30 0ꢀ0ꢁ
(1ꢀ2 0ꢀ002ꢂ
ꢁ (0ꢀ196ꢂ + 4ꢁ°
Ø 7ꢀ3 0ꢀ1 (0ꢀ29 0ꢀ0039ꢂ
21 (0ꢀ82ꢂ
20 (0ꢀ78ꢂ
- 0ꢀ1
Ø 4ꢀ3
0ꢀ0
- 0ꢀ004
0ꢀ000
(Ø 0ꢀ169
ꢂ
¼" - 20 UNC
40 MAXꢀ (1ꢀꢁ8ꢂ
Document Number: 95020
Revision: 20-May-09
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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