VS-25TTSS08S-M3 [VISHAY]
Thyristor, Surface Mount, Phase Control SCR, 16 A;
| 型号： | VS-25TTSS08S-M3 |
| 厂家： | 
VISHAY |
| 描述： | Thyristor, Surface Mount, Phase Control SCR, 16 A |
| 文件： | 总7页 (文件大小：190K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-25TTS08S-M3, VS-25TTS12S-M3 Series
www.vishay.com
Vishay Semiconductors
Thyristor, Surface Mount, Phase Control SCR, 16 A
FEATURES
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
Anode
2, 4
• Designed
and
qualified
according
JEDEC®-JESD 47
2
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
1
1
3
3
Cathode Gate
APPLICATIONS
D2PAK (TO-263AB)
• Input rectification (soft start)
• Vishay input diodes, switches and output rectifiers which
are available in identical package outlines
PRIMARY CHARACTERISTICS
IT(AV)
16 A
V
DRM/VRRM
800 V, 1200 V
1.25 V
DESCRIPTION
The VS-25TTS...S-M3 high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
VTM
IGT
45 mA
TJ
-40 to +125 °C
D2PAK (TO-263AB)
Single SCR
Package
Circuit configuration
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
THREE-PHASE BRIDGE
UNITS
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz. (140 μm) copper
3.5
5.5
A
Aluminum IMS, RthCA = 15 °C/W
8.5
13.5
25.0
Aluminum IMS with heatsink, RthCA = 5 °C/W
16.5
Note
TA = 55 °C, TJ = 125 °C, footprint 300 mm2
•
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
16
UNITS
IT(AV)
Sinusoidal waveform
A
IRMS
25
V
RRM/VDRM
800 to 1200
350
V
A
ITSM
VT
16 A, TJ = 25 °C
1.25
V
dV/dt
dI/dt
TJ
500
V/μs
A/μs
°C
150
-40 to +125
VOLTAGE RATINGS
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
IRRM/IDRM,
AT 125 °C
mA
PART NUMBER
VS-25TTS08S-M3
VS-25TTS12S-M3
800
800
10
1200
1200
Revision: 04-Jan-18
Document Number: 96414
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-25TTS08S-M3, VS-25TTS12S-M3 Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
A
TYP. MAX.
Maximum average on-state current
Maximum RMS on-state current
IT(AV)
IRMS
TC = 93 °C, 180° conduction half sine wave
16
25
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
16 A, TJ = 25 °C
300
350
450
630
6300
1.25
12.0
1.0
Maximum peak, one-cycle,
non-repetitive surge current
ITSM
I2t
Maximum I2t for fusing
A2s
Maximum I2t for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
I2t
VTM
rt
A2s
V
m
V
TJ = 125 °C
VT(TO)
TJ = 25 °C
0.5
Maximum reverse and direct leakage current
Holding current
IRM/IDM
VR = rated VRRM/VDRM
TJ = 125 °C
10
Anode supply = 6 V,
VS-25TTS08,
mA
IH
resistive load, initial IT = 1 A,
VS-25TTS12
-
150
TJ = 25 °C
Maximum latching current
IL
Anode supply = 6 V, resistive load, TJ = 25 °C
TJ = TJ max., linear to 80 %, VDRM = Rg - k = open
200
500
150
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
dV/dt
dI/dt
V/μs
A/μs
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES
8.0
UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
W
PG(AV)
+ IGM
2.0
1.5
A
V
- VGM
10
Anode supply = 6 V, resistive load, TJ = - 10 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 125 °C
Anode supply = 6 V, resistive load, TJ = - 10 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 125 °C
60
Maximum required DC gate current to trigger
Maximum required DC gate voltage to trigger
IGT
45
mA
20
2.5
VGT
2.0
V
1.0
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
VGD
IGD
0.25
2.0
TJ = 125 °C, VDRM = rated value
mA
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
tgt
trr
tq
TJ = 25 °C
0.9
4
μs
TJ = 125 °C
110
Revision: 04-Jan-18
Document Number: 96414
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-25TTS08S-M3, VS-25TTS12S-M3 Series
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
-40 to +125
°C
Maximum thermal resistance,
RthJC
DC operation
1.1
40
junction to case
°C/W
Typical thermal resistance,
junction to ambient (PCB mount)
(1)
RthJA
2
g
Approximate weight
Marking device
0.07
oz.
25TTS08S
25TTS12S
Case style D2PAK (TO-263AB)
Note
(1)
When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm] copper 40 °C/W.
For recommended footprint and soldering techniques refer to application note #AN-994
130
120
110
100
90
25
20
15
10
5
180°
120°
90°
R
(DC) = 1.1 °C/ W
thJC
60°
30°
Conduction Angle
RM S Lim it
30°
60°
Conduction Angle
90°
10
120°
180°
15
T = 125°C
J
0
0
5
20
0
4
8
12
16
20
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
130
120
110
100
90
35
DC
R
(DC) = 1.1 °C/W
thJC
180°
120°
90°
30
25
20
15
10
5
60°
30°
Conduction Period
RM S Lim it
Conduction Period
90°
120°
60°
10
T = 125°C
J
DC
25
30°
180°
20
0
80
0
5
15
30
0
5
10
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
15
20
25
30
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
Revision: 04-Jan-18
Document Number: 96414
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-25TTS08S-M3, VS-25TTS12S-M3 Series
www.vishay.com
Vishay Semiconductors
400
350
300
250
200
150
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
Rated V
Applied Following Surge.
RRM
Initial T = 125°C
Of Conduction May Not Be Maintained.
J
350
300
250
200
150
100
Initial T = 125°C
J
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
No Voltage Reapplied
Rated V
RRM
Reapplied
0.01
0.1
Pulse Tra in Dura t ion (s)
1
1
10
100
NumberOf Equal Amplitude Half Cycle Current Pulses(N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
100
10
T = 25°C
J
T = 125°C
J
1
0
1
2
3
4
5
InstantaneousOn-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
10
1
Steady State Value
(DC Operation)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
0.01
Si n g l e Pu lse
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Gate Characteristics
Revision: 04-Jan-18
Document Number: 96414
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-25TTS08S-M3, VS-25TTS12S-M3 Series
www.vishay.com
Vishay Semiconductors
100
Rectangular gate pulse
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30%rated di/dt: 10 V, 65 ohms
tr = 1µs, tp >= 6 µs
10
1
(a)
(b)
(2)
(3)
(1)
(4)
VGD
IGD
Frequency Limited by PG(AV)
10 100
0.1
0.001
0.01
0.1
1
InstantaneousGate Current (A)
Fig. 9 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
25
T
T
S
12
S
TRL -M3
1
2
3
4
5
6
7
8
9
1
-
-
-
Vishay Semiconductors product
Current rating (25 = 25 A)
Circuit configuration:
T = single thyristor
Package:
T = D2PAK (TO-263AB)
Type of silicon:
2
3
4
5
-
-
08 = 800 V
12 = 1200 V
S = standard recovery rectifier
Voltage rating: voltage code x 100 = VRRM
S = surface mountable
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
6
7
8
-
-
-
-
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
9
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
VS-25TTS08S-M3
50
1000
800
VS-25TTS08STRR-M3
VS-25TTS08STRL-M3
VS-25TTS12S-M3
800
800
50
800
13" diameter reel
1000
800
Antistatic plastic tubes
13" diameter reel
VS-25TTS12STRR-M3
VS-25TTS12STRL-M3
800
800
800
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96164
Part marking information
Packaging information
www.vishay.com/doc?95444
www.vishay.com/doc?96424
Revision: 04-Jan-18
Document Number: 96414
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2PAK (SMD-220)
B
A
Pad layout
A
(E)
(2)(3)
E
A
c2
11.00
MIN.
(0.43)
(3)
D
L1
4
2
9.65
MIN.
(0.38)
(D1) (3)
Detail A
17.90 (0.70)
15.00 (0.625)
H
(2)
1
3
3.81
MIN.
L2
(0.15)
B
B
2.32
MIN.
(0.08)
A
B
2.64 (0.103)
2.41 (0.096)
2 x b2
2 x b
C
(3)
E1
c
View A - A
0.004 M
0.010 M
M
B
A
2 x e
Base
Metal
Plating
(4)
b1, b3
H
Gauge
plane
(4)
c1
(c)
B
0° to 8°
L
Seating
plane
L3
A1
(b, b2)
Lead tip
L4
Detail “A”
Section B - B and C - C
Scale: None
Rotated 90 °CW
Scale: 8:1
MILLIMETERS
INCHES
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
MAX.
4.83
0.254
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
MIN.
6.86
9.65
7.90
MAX.
8.00
MIN.
MAX.
0.315
0.420
0.346
A
A1
b
D1
E
0.270
0.380
0.311
3
2, 3
3
10.67
8.80
E1
e
b1
b2
b3
c
4
4
4
2
2.54 BSC
0.100 BSC
H
14.61
1.78
-
15.88
2.79
1.65
1.78
0.575
0.070
-
0.625
0.110
0.066
0.070
L
L1
L2
L3
L4
3
c1
c2
D
1.27
0.050
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Datum A and B to be determined at datum plane H
Controlling dimension: inches
Outline conforms to JEDEC® outline TO-263AB
Revision: 13-Jul-17
Document Number: 96164
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
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