VS-301URA160 [VISHAY]
DIODE GP 1.6KV 330A DO205AB;
| 型号： | VS-301URA160 |
| 厂家： | 
VISHAY |
| 描述： | DIODE GP 1.6KV 330A DO205AB |
| 文件： | 总12页 (文件大小：401K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-301U(R), VS-303U(R), VS-305U(R), VS-307U(R), VS-309U(R) Series
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Vishay Semiconductors
Standard Recovery Diodes,
(Stud Version), 300 A
FEATURES
• Wide current range
• High voltage rating up to 2500 V
• High surge current capabilities
• Stud cathode and stud anode version
• High resistance to acceleration
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DO-9 (DO-205AB)
TYPICAL APPLICATIONS
• Converters
• Power supplies
PRIMARY CHARACTERISTICS
IF(AV)
300 A
• Machine tool controls
• High power drives
Package
DO-9 (DO-205AB)
Single
Circuit configuration
• Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
301U(R)
PARAMETER
TEST CONDITIONS
UNITS
160 TO 200
250
300
330
120
A
°C
A
IF(AV)
IF(RMS)
IFSM
TC
120
520
470
50 Hz
60 Hz
50 Hz
60 Hz
Range
8250
6050
6335
183
A
8640
340
I2t
kA2s
311
167
VRRM
TJ
1600 to 2000
-40 to +180
2500
-40 to +180
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VOLTAGE
TYPE NUMBER
PEAK REVERSE VOLTAGE
V
CODE
VS-301U(R)
VS-303U(R)
VS-305U(R)
VS-307U(R)
VS-309U(R)
160
200
250
1600
2000
2500
1700
2100
2600
15
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FORWARD CONDUCTION
301U(R)
160 TO 200
PARAMETER
SYMBOL
TEST CONDITIONS
180° conduction, half sine wave
DC at TC = 115 °C (up to 2000 V), TC = 102 °C (2500 V)
UNITS
250
300
330
120
A
°C
A
Maximum average forward current
at case temperature
IF(AV)
120
Maximum RMS forward current
IF(RMS)
520
470
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
8250
8640
6940
7270
340
6050
6335
5090
5330
183
No voltage
reapplied
Maximum peak, one cycle forward,
non-repetitive surge current
IFSM
A
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
311
167
Maximum I2t for fusing
I2t
kA2s
241
129
100 % VRRM
reapplied
220
118
Maximum I2√t for fusing
I2√t
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
3400
0.77
0.84
1830
0.90
0.97
kA2√s
Low level value of threshold voltage
High level value of threshold voltage
VF(TO)1
VF(TO)2
V
Low level value of forward
slope resistance
rf1
rf2
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
0.49
0.49
1.22
0.59
0.55
1.46
mΩ
High level value of forward
slope resistance
Ipk = 942 A, TJ = TJ maximum, tp = 10 ms sinusoidal
wave
Maximum forward voltage drop
VFM
V
SPECIAL SELECTION FORWARD VOLTAGE (Tj = 25 °C)
DEVICE CLASSIFICATION
BAND
MIN.
MAX.
UNIT
TEST CONDITIONS
VS-305U250P4
VS-307UA250P4
VS-305UR250P4
VS-307URA250P4
P4
1.31
1.40
V
1000 Apk
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating
temperature range
TJ
-40 to 180
°C
Maximum storage
temperature range
TStg
RthJC
RthCS
-40 to 200
0.14
Maximum thermal resistance,
junction to case
DC operation
K/W
Maximum thermal resistance,
case to heatsink
Mounting surface, smooth, flat and greased
0.08
Not lubricated threads
Lubricated threads
37
28
Maximum allowed mounting torque
+0 -20 %
N · m
301U
303U
250
152
177
197
160
5
5
5
5
5
Weight
305U
307U
309U
g
Case style
See dimensions - link at the end of datasheet
DO-9 (DO-205AB)
Revision: 28-Apr-2020
Document Number: 93509
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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ΔRthJC CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
80 TO 200
0.015
250
80 TO 200
0.011
250
180°
120°
90°
0.015
0.018
0.023
0.034
0.056
0.011
0.019
0.025
0.035
0.057
0.018
0.019
0.023
0.025
TJ = TJ maximum
K/W
60°
0.034
0.035
30°
0.056
0.057
Note
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
•
180
170
160
150
140
130
120
110
180
170
160
150
140
130
120
110
301U(R) Series(1600V to 2000V)
301U(R) Series(2500V)
R
(DC) = 0.14 K/W
R
(DC) = 0.14 K/W
thJC
thJC
Conduction Angle
Conduction Angle
30°
60°
90°
30°
180°
60°
90°
120°
180°
120°
0
50 100 150 200 250 300 350
Average Forward Current (A)
0
50 100 150 200 250 300 350
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
180
170
160
150
140
130
120
110
100
90
180
301U(R) Series(1600V to 2000V)
(DC) = 0.14 K/W
301U(R) Series(2500V)
170
160
150
140
130
120
110
100
R
thJC
R
(DC) = 0.14 K/W
thJC
Conduction Period
Conduction Period
30°
30°
60°
60°
90°
120°
90°
120°
180°
DC
180°
300
Average Forward Current (A)
DC
0
100 200 300 400 500 600
Average Forward Current (A)
0
100
200
400
500
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Revision: 28-Apr-2020
Document Number: 93509
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Semiconductors
400
180°
t
h
S
120°
90°
60°
30°
A
350
300
250
200
150
100
50
0
.
3
K
/
W
RM S Lim it
Conduction Angle
301U(R) Series
(1600V to 2000V)
T = 180°C
J
0
0
50 100 150 200 250 300
Average Forward Current (A)
3
2
5
0
0
40 60 80 100 120 140 160 180
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
550
500
450
400
350
300
250
200
150
100
50
DC
180°
120°
90°
R
=
0
.
1
K
/
W
-
D
60°
e
l
t
a
R
30°
RM S Lim it
Conduction Period
0
.
7
K
/
W
301U(R) Series
(1600V to 2000V)
T = 180 ° C
J
0
0
100 200 300 400 500
Average Forward Current (A)
6
0
0
40 60 80 100 120 140 160 180
Maximum Allowable Ambient Temperature (°C)
Fig. 5 - Forward Power Loss Characteristics
450
400
350
300
250
200
150
100
50
180°
120°
90°
60°
0
30°
.
3
K
/
W
RM S Lim it
Conduction Angle
301U(R) Series(2500V)
T = 180°C
J
0
0
50
100 150 200 250
3
0
0
40 60 80 100 120 140 160 180
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 6 - Forward Power Loss Characteristics
Revision: 28-Apr-2020
Document Number: 93509
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-301U(R), VS-303U(R), VS-305U(R), VS-307U(R), VS-309U(R) Series
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Vishay Semiconductors
600
DC
180°
500
t
h
120°
90°
60°
30°
S
A
400
300
200
100
0
0
.
3
K
/
W
RMS Lim it
Conduction Period
301U(R) Series(2500V)
T = 180°C
J
0
100
200
300
400
5
0
0
40 60 80 100 120 140 160 180
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - Forward Power Loss Characteristics
8000
7000
6000
5000
4000
3000
2000
6000
At Any Rated Load Condition And With
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
5500
5000
4500
4000
3500
3000
2500
2000
1500
Rated V
Applied Following Surge.
RRM
RRM
Initial T = 180°C
Initial T = 180°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
301U(R) Series
(1600V to 2000V)
301U(R) Series (2500V)
10
1
10
100
1
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 8 - Maximum Non-Repetitive Surge Current
Fig. 10 - Maximum Non-Repetitive Surge Current
9000
6000
Maximum Non Repetitive Surge Current
Maximum Non Repetitive Surge Current
VersusPulse Train Duration.
VersusPulse Train Duration.
8000
Initial T = 180 °C
J
Initial T = 180 °C
J
5000
4000
3000
2000
1000
No Voltage Reapplied
No Voltage Reapplied
7000
Rated V
Reapplied
Ra t e d V
Re a p p lie d
RRM
RRM
6000
5000
4000
3000
2000
1000
301U(R) Series
(1600V to 2000V)
301U(R) Series(2500V)
0.01
0.1
1
0.01
0.1
Pulse Tra in Dura t ion (s)
1
Pulse Train Duration (s)
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 11 - Maximum Non-Repetitive Surge Current
Revision: 28-Apr-2020
Document Number: 93509
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10000
1000
100
10000
T = 2 5 ° C
J
T = 25°C
J
T = 180° C
T = 180 ° C
J
J
1000
100
10
301U(R) Series
(1600V to 2000V)
301U(R) Series(2500V)
10
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
3.5
InstantaneousForward Voltage (V)
InstantaneousForward Voltage (V)
Fig. 12 - Forward Voltage Drop Characteristics
Fig. 13 - Forward Voltage Drop Characteristics
1
Steady State Value:
R
= 0.14 K/W
thJC
(DC Operation)
0.1
0.01
301U(R) Series
0.001
0.001
0.01
0.1
Sq u a re Wa v e Pu lse D u r a t io n ( s)
1
10
Fig. 14 - Thermal Impedance ZthJC Characteristic
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VS-301U(R), VS-303U(R), VS-305U(R), VS-307U(R), VS-309U(R) Series
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ORDERING INFORMATION TABLE
Device code
VS- 30
1
U
A
250 P4
1
2
3
4
5
6
7
1
2
3
-
-
-
Vishay Semiconductors product
30 = essential part number
1 = standard device
3 = top threaded version
5 = type for rotating application with top threaded
version 3/8 16UNC-2A
7 = type for rotating application with flexible lead
9 = type for rotating application with top threaded
version 3/8 24UNF
4
-
U = stud normal polarity (cathode to stud)
UR = stud reverse polarity (anode to stud)
A = maximum leakage selection IRRM = 2 mA, TJ = 25 °C
Voltage code x 10 = VRRM (see Voltage Ratings table)
-
-
-
5
6
7
Refer special selection table for applicable parts
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95337
Revision: 28-Apr-2020
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Outline Dimensions
Vishay Semiconductors
DO-205AB (DO-9), B-60, B-61, B-41, B-40 for 301U(R), 307U(R),
305U(R) and 309U(R) Series
DIMENSIONS FOR 301U(R) SERIES - DO-205AB (DO-9) in millimeters (inches)
19 (0.75) MAX.
Ceramic housing
Ø 8.7 (0.34) MAX.
24 (0.94)
MAX.
140 (5.51)
146 (5.75)
28 (1.10)
MAX.
21(0.83)
MAX.
3/4"-16UNF-2A
for metric device: M16 x 1.5
contact factory
32 (1.26)
3.9 (0.15)
Document Number: 95337
Revision: 22-Jul-08
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Outline Dimensions
Vishay Semiconductors
DO-205AB (DO-9), B-60, B-61, B-41, B-40 for
301U(R), 307U(R), 305U(R) and 309U(R) Series
DIMENSIONS FOR 307U(R) SERIES - B-60 in millimeters (inches)
Ceramic housing
19 (0.75) MAX.
11 (0.43)
NOM.
Ø 8.5 (0.33)
12 (0.47)
MIN.
140 (5.51)
148 (5.83)
54 (2.13)
MAX.
21 (0.83)
MAX.
3/4"-16UNF-2A
32 (1.26)
3.9 (0.15)
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Document Number: 95337
Revision: 22-Jul-08
Outline Dimensions
Vishay Semiconductors
DO-205AB (DO-9), B-60, B-61, B-41, B-40 for
301U(R), 307U(R), 305U(R) and 309U(R) Series
DIMENSIONS FOR 305U(R) SERIES - B-61 in millimeters (inches)
Ceramic housing
3/8"-16UNC-2A
6.4 (0.25)
MAX.
59 (2.32)
MAX.
98 (3.86)
MAX.
7 (0.28) MAX.
21 (0.83)
MAX.
3/4"-16UNF-2A
32 (1.26)
16 (0.63)
DIMENSIONS FOR 309U(R) SERIES - B-41 in millimeters (inches)
Ceramic housing
3/8"-24UNF-2A
7.6 (0.3) MAX.
60 (2.36)
MAX.
97 (3.82)
MAX.
7 (0.28) MAX.
21 (0.83)
MAX.
3/4"-16UNF-2A
32 (1.26)
17.5 (0.69)
Document Number: 95337
Revision: 22-Jul-08
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Outline Dimensions
Vishay Semiconductors
DO-205AB (DO-9), B-60, B-61, B-41, B-40 for
301U(R), 307U(R), 305U(R) and 309U(R) Series
DIMENSIONS FOR 303U(R) SERIES - B-40 in millimeters (inches)
Ceramic housing
3/8"-24UNF-2A
16.5 (0.65)
MAX.
Ø 27.3 (1.07) MAX.
59.7 (2.35)
MAX.
29 (1.14)
MAX.
9 (0.35) MAX.
21 (0.83)
MAX.
3/4"-16UNF-2A
32 (1.26)
17.5 (0.69)
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
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Revision: 09-Jul-2021
Document Number: 91000
1
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VS-303UA200
Rectifier Diode, 1 Phase, 1 Element, 330A, 2000V V(RRM), Silicon, DO-205AB, DO-9, 1 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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