VS-30CPH03PBF [VISHAY]
Ultrafast Rectifier, 2 x 15 A FRED Pt®; 超快整流器, 2× 15 A FRED Pt®型号: | VS-30CPH03PBF |
厂家: | VISHAY |
描述: | Ultrafast Rectifier, 2 x 15 A FRED Pt® |
文件: | 总8页 (文件大小:169K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VS-30CPH03PbF, VS-30CPH03-N3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 2 x 15 A FRED Pt®
Base
common
cathode
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
2
• Designed and qualified according to
JEDEC-JESD47
1
3
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Anode
1
Anode
2
2
TO-247AC
Common
cathode
DESCRIPTION/APPLICATIONS
300 V series are the state of the art ultrafast recovery
rectifiers designed with optimized performance of forward
voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
PRODUCT SUMMARY
Package
TO-247AC
2 x 15 A
300 V
IF(AV)
VR
VF at IF
1.25 V
These devices are intended for use in the output
rectification stage of SMPS, UPS, DC/DC converters as well
as freewheeling diodes in low voltage inverters and chopper
motor drives.
t
rr typ.
See Recovery table
175 °C
TJ max.
Diode variation
Common cathode
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
300
UNITS
Repetitive peak reverse voltage
VRRM
V
per leg
total device
15
Average rectified forward current
IF(AV)
TC = 142 °C
TJ = 25 °C
30
A
Non-repetitive peak surge current per leg
Operating junction and storage temperatures
IFSM
140
TJ, TStg
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
IF = 15 A
300
-
-
V
-
-
-
-
-
-
1.05
0.85
0.05
12
1.25
1.00
40
Forward voltage
VF
IR
IF = 15 A, TJ = 125 °C
VR = VR rated
Reverse leakage current
μA
TJ = 125 °C, VR = VR rated
VR = 300 V
400
-
Junction capacitance
Series inductance
CT
LS
45
pF
Measured lead to lead 5 mm from package body
8
-
nH
Revision: 26-Jun-12
Document Number: 94012
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30CPH03PbF, VS-30CPH03-N3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
-
40
-
Reverse recovery time
trr
32
ns
TJ = 125 °C
45
-
IF = 15 A
TJ = 25 °C
2.4
6.1
38
-
Peak recovery current
IRRM
dIF/dt = - 200 A/μs
TJ = 125 °C
A
-
V
R = 200 V
TJ = 25 °C
-
Reverse recovery charge
Qrr
nC
TJ = 125 °C
137
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction and
storage temperature range
TJ, TStg
- 65
-
175
°C
Thermal resistance,
junction to case per leg
RthJC
RthJA
RthCS
-
-
-
0.9
-
2.0
40
-
Thermal resistance,
junction to ambient per leg
Typical socket mount
°C/W
Thermal resistance,
case to heatsink
Mounting surface, flat, smooth
and greased
0.4
-
-
6.0
-
-
g
Weight
0.21
oz.
6.0
(5.0)
12
(10)
kgf · cm
(lbf ·in)
Mounting torque
Marking device
-
Case style TO-247AC
30CPH03
Revision: 26-Jun-12
Document Number: 94012
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30CPH03PbF, VS-30CPH03-N3
www.vishay.com
Vishay Semiconductors
1000
100
TJ = 175 °C
100
TJ = 150 °C
TJ = 125 °C
10
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
10
1
TJ = 100 °C
0.1
0.01
TJ = 25 °C
1
0.4
0.001
0
50
100
150
200
250
300
0.6
0.8
1.0
1.2
1.4
1.6
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
TJ = 25 °C
100
10
0
50
100
150
200
250
300
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
t1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t2
0.1
Notes:
1. Duty factor D = t1/t2
.
Single pulse
(thermal resistance)
2. Peak TJ = PDM x ZthJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 26-Jun-12
Document Number: 94012
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30CPH03PbF, VS-30CPH03-N3
www.vishay.com
Vishay Semiconductors
180
170
160
150
140
130
120
100
IF = 30 A , TJ = 25 °C
IF = 30 A , TJ = 125 °C
DC
Square wave (D = 0.50)
Rated VR applied
See note (1)
10
100
0
5
10
15
20
25
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
22
1000
20
18
16
14
12
10
8
RMS limit
IF = 30 A , TJ = 125 °C
D = 0.01
100
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
6
IF = 30 A , TJ = 25 °C
4
DC
2
0
10
100
0
5
10
15
20
25
1000
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
dIF/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
Revision: 26-Jun-12
Document Number: 94012
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30CPH03PbF, VS-30CPH03-N3
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 26-Jun-12
Document Number: 94012
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30CPH03PbF, VS-30CPH03-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
30
C
P
H
03 PbF
1
2
3
4
5
6
7
1
-
-
-
-
Vishay Semiconductors product
Current rating (30 = 30 A)
2
3
4
4
5
6
7
Circuit configuration: C = Common cathode
Package:
P = TO-247
-
-
-
H = Hyperfast recovery
Voltage rating (03 = 300 V)
Environmental digit:
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-30CPH03PbF
VS-30CPH03-N3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
25
25
500
500
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95223
www.vishay.com/doc?95226
www.vishay.com/doc?95007
TO-247ACPbF
TO-247AC-N3
Part marking information
Revision: 26-Jun-12
Document Number: 94012
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
Ø P
(Datum B)
FP1
B
A2
A
N
S
M
M
Ø K D B
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
L
4
D
1
2
3
Thermal pad
(5) L1
C
(4)
E1
A
See view B
M
M
0.01 D B
2 x b2
3 x b
View A - A
C
2 x e
A1
b4
M
M
0.10 C A
Lead assignments
(b1, b3, b5)
Planting
Base metal
Diodes
D D E
E
1. - Anode/open
2. - Cathode
3. - Anode
(c)
c1
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.50
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
19.71
13.08
MAX.
5.31
2.59
2.49
1.40
1.35
2.39
2.37
3.43
3.38
0.86
0.76
20.70
-
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.094
0.135
0.133
0.034
0.030
0.815
-
MIN.
0.51
MAX.
1.30
15.87
-
MIN.
MAX.
0.051
0.625
-
A
A1
A2
b
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
D2
E
0.020
0.602
0.540
15.29
13.72
3
E1
e
5.46 BSC
2.54
0.215 BSC
0.010
0.559
b1
b2
b3
b4
b5
c
FK
L
14.20
3.71
16.10
4.29
0.634
0.169
L1
N
0.146
7.62 BSC
0.3
P
P1
Q
3.56
3.66
6.98
5.69
5.49
0.14
-
0.144
0.275
0.224
0.216
-
c1
D
5.31
4.52
0.209
1.78
3
4
R
D1
S
5.51 BSC
0.217 BSC
Notes
(1)
(2)
(3)
Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
(5)
(6)
(7)
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
Document Number: 95223
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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