VS-30EPH03PBF [VISHAY]
DIODE 30 A, 300 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, MODIFIED TO-247AC, 2 PIN, Rectifier Diode;
| 型号： | VS-30EPH03PBF |
| 厂家： | 
VISHAY |
| 描述： | DIODE 30 A, 300 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, MODIFIED TO-247AC, 2 PIN, Rectifier Diode 超快恢复二极管 快速恢复二极管 局域网 |
| 文件： | 总7页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-30EPH03PbF, VS-30EPH03-N3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 30 A FRED Pt®
FEATURES
Base
common
cathode
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
2
• Designed and qualified according to
JEDEC®-JESD 47
2
3
Available
1
3
1
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Cathode
Anode
TO-247AC modified
DESCRIPTION / APPLICATION
300 V series are the state of the art ultrafast recovery
rectifiers designed with optimized performance of forward
voltage drop and ultrafast recovery time.
PRODUCT SUMMARY
Package
TO-247AC modified (2 pins)
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
IF(AV)
30 A
300 V
VR
VF at IF
0.9 V
t
rr typ.
See Recovery table
175 °C
TJ max.
Diode variation
Single die
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VRRM
TEST CONDITIONS
VALUES
300
UNITS
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
V
IF(AV)
TC = 143 °C
TJ = 25 °C
30
A
IFSM
300
TJ, TStg
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
IF = 30 A
300
-
-
V
-
-
-
-
-
-
1.08
0.9
1.25
1.00
60
Forward voltage
VF
IR
IF = 30 A, TJ = 125 °C
VR = VR rated
0.05
280
90
Reverse leakage current
μA
TJ = 125 °C, VR = VR rated
VR = 300 V
600
-
Junction capacitance
Series inductance
CT
LS
pF
nH
Measured lead to lead 5 mm from package body
3.5
-
Revision: 09-Jul-15
Document Number: 94017
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30EPH03PbF, VS-30EPH03-N3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
-
55
-
Reverse recovery time
trr
38
ns
TJ = 125 °C
52
-
IF = 30 A
dIF/dt = - 200 A/μs
TJ = 25 °C
2.8
7.3
53
-
Peak recovery current
IRRM
A
TJ = 125 °C
-
V
R = 200 V
TJ = 25 °C
-
Reverse recovery charge
Qrr
nC
TJ = 125 °C
190
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction and
storage temperature range
TJ, TStg
-65
-
175
0.9
40
-
°C
Thermal resistance,
junction to case per leg
RthJC
RthJA
RthCS
-
-
-
0.5
-
Thermal resistance,
junction to ambient
Typical socket mount
Mounting surface, flat, smooth and greased
°C/W
Thermal resistance,
case to heatsink
0.4
-
-
6.0
-
-
g
Weight
0.22
oz.
6.0
(5.0)
12
(10)
kgf · cm
(lbf in)
Mounting torque
Marking device
-
Case style TO-247AC modified
30EPH03
Revision: 09-Jul-15
Document Number: 94017
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30EPH03PbF, VS-30EPH03-N3
www.vishay.com
Vishay Semiconductors
1000
100
10
1000
TJ = 175 °C
TJ = 150 °C
100
10
TJ = 125 °C
TJ = 100 °C
1
0.1
0.01
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
TJ = 25 °C
1
0.001
0
50
100
150
200
250
300
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
1000
TJ = 25 °C
100
10
0
50
100
150
200
250
300
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.1
PDM
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t1
t2
0.01
0.001
Single pulse
(thermal resistance)
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
.
.
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 09-Jul-15
Document Number: 94017
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30EPH03PbF, VS-30EPH03-N3
www.vishay.com
Vishay Semiconductors
180
170
160
150
140
130
120
100
DC
Square wave (D = 0.50)
Rated VR applied
IF = 30 A, TJ = 25 °C
IF = 30 A, TJ = 125 °C
See note (1)
10
100
0
5
10 15 20 25 30 35 40 45
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
50
1000
40
IF = 30 A, TJ = 125 °C
IF = 30 A, TJ = 25 °C
RMS limit
30
D = 0.01
D = 0.02
100
D = 0.05
D = 0.10
D = 0.20
D = 0.50
20
10
0
DC
10
100
0
10
20
30
40
50
1000
dIF/dt (A/µs)
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
Revision: 09-Jul-15
Document Number: 94017
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30EPH03PbF, VS-30EPH03-N3
www.vishay.com
Vishay Semiconductors
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
30
E
P
H
03 PbF
1
2
3
4
5
6
7
1
-
-
-
Vishay Semiconductors product
Current rating (30 = 30 A)
2
3
Circuit configuration:
E = single diode
4
-
Package:
P = TO-247AC modified
-
-
-
H = hyperfast recovery
Voltage rating (03 = 300 V)
Environmental digit:
5
6
7
PbF = lead (Pb)-free and RoHS-compliant
-N3 = halogen-free, RoHS-compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-30EPH03PbF
VS-30EPH03-N3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
25
25
500
500
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95541
TO-247AC modified PbF
TO-247AC modified -N3
www.vishay.com/doc?95255
www.vishay.com/doc?95442
Part marking information
Revision: 09-Jul-15
Document Number: 94017
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
TO-247AC modified - 50 mils L/F
DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
Ø P
(Datum B)
Ø P1
B
A2
A
S
M
M
Ø K D B
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
4
D
1
2
3
Thermal pad
(5) L1
C
L
(4)
E1
A
See view B
2 x b2
3 x b
View A - A
C
2 x e
A1
b4
M
M
0.10 C A
(b1, b3, b5)
Plating
Base metal
D D E
E
(c)
c1
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.17
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
19.71
13.08
MAX.
5.31
2.59
1.37
1.40
1.35
2.39
2.34
3.43
3.38
0.89
0.84
20.70
-
MAX.
0.209
0.102
0.054
0.055
0.053
0.094
0.092
0.135
0.133
0.035
0.033
0.815
-
MIN.
0.51
MAX.
1.35
15.87
-
MIN.
0.020
0.602
0.53
MAX.
0.053
0.625
-
A
A1
A2
b
0.183
0.087
0.046
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
D2
E
15.29
13.46
3
E1
e
5.46 BSC
0.254
16.10
0.215 BSC
0.010
0.634
b1
b2
b3
b4
b5
c
Ø K
L
14.20
3.71
3.56
-
0.559
0.146
0.14
-
L1
Ø P
Ø P1
Q
4.29
3.66
7.39
5.69
5.49
0.169
0.144
0.291
0.224
0.216
5.31
4.52
0.209
0.178
c1
D
R
3
4
S
5.51 BSC
0.217 BSC
D1
Notes
(1)
(2)
(3)
Dimensioning and tolerance per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
(5)
(6)
(7)
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC® outline TO-247 with exception of dimension c and Q
Revision: 20-Apr-17
Document Number: 95541
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
相关型号：
VS-30EPU12LHN3
Rectifier Diode, 1 Phase, 1 Element, 30A, 1200V V(RRM), Silicon, TO-247AD, TO-247L, 2 PIN
VISHAY
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