VS-30TPS12PBF [VISHAY]
Silicon Controlled Rectifier, SCR;
| 型号： | VS-30TPS12PBF |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, SCR 栅 栅极 |
| 文件： | 总9页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-30TPS..PbF Series, VS-30TPS..-M3 Series
www.vishay.com
Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 30 A
FEATURES
2
(A)
• Designed
and
qualified
according
to
JEDEC-JESD47
• 125 °C max. operating junction temperature
• Material categorization:
For definitions of compliance please see
3
2
1
www.vishay.com/doc?99912
1 (K)
(G) 3
Available
TO-247AC
APPLICATIONS
• Typical usage is in input rectification crowbar (soft start)
and AC switch in motor control, UPS, welding and battery
charge
PRODUCT SUMMARY
Package
Diode variation
IT(AV)
TO-247AC
Single SCR
20 A
DESCRIPTION
V
DRM/VRRM
800 V, 1200 V
1.3 V
The VS-30TPS... high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
VTM
IGT
45 mA
TJ
- 40 °C to 125 °C
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
20
UNITS
IT(AV)
IRMS
VRRM/VDRM
ITSM
Sinusoidal waveform
A
30
800/1200
300
V
A
VT
20 A, TJ = 25 °C
1.3
V
dV/dt
dI/dt
TJ
500
V/μs
A/μs
°C
150
- 40 to 125
VOLTAGE RATINGS
VRRM/VDRM, MAXIMUM
V
RSM, MAXIMUM
I
RRM/IDRM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
NON-REPETITIVE PEAK
PART NUMBER
AT 125 °C
mA
REVERSE VOLTAGE
V
VS-30TPS08PbF, VS-30TPS08-M3
VS-30TPS12PbF, VS-30TPS12-M3
800
900
10
1200
1300
Revision: 29-Jul-13
Document Number: 94386
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30TPS..PbF Series, VS-30TPS..-M3 Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
IT(AV)
TEST CONDITIONS
VALUES UNITS
Maximum average on-state current
Maximum RMS on-state current
TC = 95 °C, 180° conduction half sine wave
20
IRMS
30
A
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
20 A, TJ = 25 °C
250
Maximum peak, one-cycle
non-repetitive surge current
ITSM
300
310
A2s
442
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
I2t
VTM
rt
4420
1.3
12
A2s
V
m
V
TJ = 125 °C
TJ = 25 °C
VT(TO)
1.0
0.5
10
Maximum reverse and direct leakage current IRM/IDM
VR = Rated VRRM/VDRM
TJ = 125 °C
mA
Maximum holding current
IH
IL
Anode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
150
200
500
150
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
dV/dt
dI/dt
TJ = TJ maximum, linear to 80 % VDRM, Rg-k = Open
V/µs
A/µs
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
8.0
W
2.0
PG(AV)
+ IGM
1.5
10
A
V
- VGM
Anode supply = 6 V, resistive load, TJ = - 10 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 125 °C
Anode supply = 6 V, resistive load, TJ = - 10 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 125 °C
60
Maximum required DC gate current to trigger
IGT
45
mA
20
2.5
2.0
1.0
0.25
2.0
Maximum required DC gate
voltage to trigger
VGT
V
Maximum DC gate voltage not to trigger
VGD
IGD
TJ = 125 °C, VDRM = Rated value
Maximum DC gate current not to trigger
mA
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
tgt
trr
tq
TJ = 25 °C
0.9
4
µs
TJ = 125 °C
110
Revision: 29-Jul-13
Document Number: 94386
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30TPS..PbF Series, VS-30TPS..-M3 Series
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 40 to 125
°C
Maximum thermal resistance,
junction to case
RthJC
RthJA
RthCS
0.8
40
DC operation
Maximum thermal resistance,
junction to ambient
°C/W
Maximum thermal resistance,
case to heatsink
Mounting surface, smooth and greased
0.2
6
g
Approximate weight
0.21
oz.
minimum
6 (5)
12 (10)
kgf · cm
(lbf · in)
Mounting torque
maximum
30TPS08
Marking device
Case style TO-247AC (JEDEC)
30TPS12
130
120
110
100
130
120
110
100
90
30TPS. . Se r ie s
thJC
30TPS. . Se r ie s
R (DC) = 0.8 °C/ W
thJC
R
(DC) = 0.8 °C/ W
Conduction Period
Conduction Angle
30°
60°
90°
30°
120°
180°
60°
90°
15
120°
DC
180°
80
90
0
0
5
10
20 25 30
35
5
10
15
20
25
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Revision: 29-Jul-13
Document Number: 94386
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30TPS..PbF Series, VS-30TPS..-M3 Series
www.vishay.com
Vishay Semiconductors
60
50
40
30
20
10
0
280
At Any Rated Load Condition And With
180°
120°
90°
Rated V
Applied Following Surge.
RRM
260
240
220
200
180
160
140
120
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
60°
30°
RM S Lim it
Conduction Angle
30TPS.. Series
T = 125°C
J
30 TPS. . Se rie s
0
5
10
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
15
20
25
30
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 5 - Maximum Non-Repetitive Surge Current
80
300
Maximum Non Repetitive Surge Current
DC
180°
120°
90°
VersusPulse Train Duration. Control
Of Conduction May Not Be Maintained.
280
260
240
220
200
180
160
140
120
Initial T = 125°C
J
60
40
20
0
No Voltage Reapplied
60°
Ra t e d V
Re a p p lie d
30°
RRM
RM S Lim it
Conduction Period
30TPS. . Se r ie s
T = 125°C
J
30TPS.. Series
0
10
20
30
40
50
0.01
0.1
Pulse Train Duration (s)
1
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
T = 25°C
J
T = 125°C
J
100
10
1
30TPS.. Series
0
1
2
3
4
5
6
7
InstantaneousOn-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
Revision: 29-Jul-13
Document Number: 94386
4
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30TPS..PbF Series, VS-30TPS..-M3 Series
www.vishay.com
Vishay Semiconductors
1
St e a d y St a t e V a lu e
(DC Operation)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
0.1
D = 0.08
Sin g le Pu lse
30TPS.. Series
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
100
10
1
Rec t a ng ula r g a t e p ulse
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5µs, tp >= 6µs
b)Recommended load line for
<= 30%rated di/dt: 10V, 65 ohms
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a)
(b)
(2)
(3)
(1)
(4)
VGD
IGD
Frequency Limited by PG(AV)
10
30TPS.. Series
0.1
0.1
0.001
0.01
1
100
InstantaneousGate Current (A)
Fig. 9 - Gate Characteristics
Revision: 29-Jul-13
Document Number: 94386
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30TPS..PbF Series, VS-30TPS..-M3 Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- 30
T
P
S
12 PbF
1
2
3
4
5
6
7
1
2
3
-
-
-
Vishay Semiconductors product
Current rating (30 = 30 A)
Circuit configuration:
T = Thyristor
4
5
-
-
Package:
P = TO-247
Type of silicon:
S = Standard recovery rectifier
Voltage code x 100 = VRRM
08 = 800 V
12 = 1200 V
6
7
-
-
Environmental digit:
PbF = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-30TPS08PbF
VS-30TPS08-M3
VS-30TPS12PbF
VS-30TPS12-M3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
25
25
25
25
500
500
500
500
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95223
TO-247AC PbF
TO-247AC -M3
www.vishay.com/doc?95226
www.vishay.com/doc?95007
Part marking information
Revision: 29-Jul-13
Document Number: 94386
6
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
Ø P
(Datum B)
FP1
B
A2
A
N
S
M
M
Ø K D B
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
L
4
D
1
2
3
Thermal pad
(5) L1
C
(4)
E1
A
See view B
M
M
0.01 D B
2 x b2
3 x b
View A - A
C
2 x e
A1
b4
M
M
0.10 C A
Lead assignments
(b1, b3, b5)
Planting
Base metal
Diodes
D D E
E
1. - Anode/open
2. - Cathode
3. - Anode
(c)
c1
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.50
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
19.71
13.08
MAX.
5.31
2.59
2.49
1.40
1.35
2.39
2.37
3.43
3.38
0.86
0.76
20.70
-
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.094
0.135
0.133
0.034
0.030
0.815
-
MIN.
0.51
MAX.
1.30
15.87
-
MIN.
MAX.
0.051
0.625
-
A
A1
A2
b
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
D2
E
0.020
0.602
0.540
15.29
13.72
3
E1
e
5.46 BSC
2.54
0.215 BSC
0.010
0.559
b1
b2
b3
b4
b5
c
FK
L
14.20
3.71
16.10
4.29
0.634
0.169
L1
N
0.146
7.62 BSC
0.3
P
P1
Q
3.56
3.66
6.98
5.69
5.49
0.14
-
0.144
0.275
0.224
0.216
-
c1
D
5.31
4.52
0.209
1.78
3
4
R
D1
S
5.51 BSC
0.217 BSC
Notes
(1)
(2)
(3)
Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
(5)
(6)
(7)
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
Document Number: 95223
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
TO-247
DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
Φ P
(Datum B)
B
A2
A
N
S
M
M
Ø K D B
Φ P1
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
L
4
D
1
2
3
Thermal pad
(5) L1
C
(4)
E1
A
See view B
M
M
0.01 D B
2 x b2
3 x b
View A - A
C
2 x e
A1
b4
M
M
0.10 C A
(b1, b3, b5)
Planting
Base metal
D D E
E
(c)
c1
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.17
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
19.71
13.08
MAX.
5.31
2.59
1.37
1.40
1.35
2.39
2.33
3.43
3.38
0.89
0.84
20.70
-
MAX.
0.209
0.102
0.054
0.055
0.053
0.094
0.092
0.135
0.133
0.035
0.033
0.815
-
MIN.
0.51
MAX.
1.35
15.87
-
MIN.
0.020
0.602
0.53
MAX.
0.053
0.625
-
A
A1
A2
b
0.183
0.087
0.046
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
D2
E
15.29
13.46
3
E1
e
5.46 BSC
0.254
14.20
0.215 BSC
0.010
0.559
b1
b2
b3
b4
b5
c
Ø K
L
16.10
4.29
0.634
0.169
L1
N
3.71
0.146
7.62 BSC
0.3
Ø P
Ø P1
Q
3.56
-
3.66
7.39
5.69
5.49
0.14
-
0.144
0.291
0.224
0.216
c1
D
5.31
4.52
0.209
0.178
3
4
R
D1
S
5.51 BSC
0.217 BSC
Notes
(1)
(2)
(3)
Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
(4)
(5)
(6)
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC® outline TO-247 with exception of dimension c and Q
(7)
Revision: 24-Sep-13
Document Number: 95542
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
Document Number: 91000
1
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VISHAY
VS-30WQ03FNTRRPBF
DIODE 30 V, SILICON, RECTIFIER DIODE, TO-252AA, ROHS COMPLIANT, PLASTIC, SIMILAR TO TO-252AA, DPAK-3, Rectifier Diode
VISHAY
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