VS-32CTQSHM3 [VISHAY]

High frequency operation;
VS-32CTQSHM3
型号: VS-32CTQSHM3
厂家: VISHAY    VISHAY
描述:

High frequency operation

文件: 总8页 (文件大小:200K)
中文:  中文翻译
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VS-32CTQ...SHM3, VS-32CTQ...-1HM3 Series  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 15 A  
FEATURES  
D2PAK  
TO-262  
• 150 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
Base  
common  
cathode  
Base  
common  
cathode  
• Guard ring for enhanced ruggedness and long  
term reliability  
2
2
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
• AEC-Q101 qualified meets JESD 201 class 1A whisker  
test  
2
2
1
1
3
3
Common  
cathode  
Common  
cathode  
Anode  
Anode  
Anode  
Anode  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
VS-32CTQ...S-M3  
VS-32CTQ...-1-M3  
DESCRIPTION  
The VS-32CTQ... Schottky rectifier series has been  
optimized for low reverse leakage at high temperature. The  
proprietary barrier technology allows for reliable operation  
up to 150 °C junction temperature. Typical applications are  
in switching power supplies, converters, freewheeling  
diodes, and reverse battery protection.  
PRODUCT SUMMARY  
IF(AV)  
2 x 15 A  
25 V, 30 V  
VR  
VF at IF  
0.40 V  
I
RM max.  
97 mA at 125 °C  
150 °C  
TJ max.  
EAS  
13 mJ  
Package  
TO-263AB (D2PAK), TO-262AA  
Common cathode  
Diode variation  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
30  
UNITS  
Rectangular waveform  
A
V
25, 30  
900  
tp = 5 μs sine  
15 Apk, TJ = 125 °C  
Range  
A
VF  
0.40  
V
TJ  
-55 to +150  
°C  
VOLTAGE RATINGS  
VS-32CTQ025SHM3  
VS-32CTQ025-1HM3  
VS-32CTQ030SHM3  
VS-32CTQ030-1HM3  
PARAMETER  
SYMBOL  
UNITS  
Maximum DC reverse voltage  
VR  
25  
30  
V
Maximum working peak reverse voltage  
VRWM  
Revision: 15-Aug-15  
Document Number: 95774  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-32CTQ...SHM3, VS-32CTQ...-1HM3 Series  
www.vishay.com  
Vishay Semiconductors  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
50 % duty cycle at TC = 115 °C, rectangular waveform  
30  
A
Maximum peak one cycle non-repetitive  
Following any rated load  
condition and with rated  
5 μs sine or 3 μs rect. pulse  
10 ms sine or 6 ms rect. pulse  
900  
surge current  
See fig. 7  
IFSM  
250  
13  
VRRM applied  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 1.20 A, L = 11.10 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
3
ELECTRICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
0.49  
UNITS  
15 A  
TJ = 25 °C  
30 A  
0.58  
Maximum forward voltage drop  
See fig. 1  
(1)  
VFM  
V
15 A  
0.40  
TJ = 125 °C  
30 A  
0.53  
TJ = 25 °C  
1.75  
Maximum reverse leakage current  
See fig. 2  
(1)  
IRM  
VR = Rated VR  
mA  
TJ = 125 °C  
97  
Threshold voltage  
VF(TO)  
rt  
0.233  
9.09  
V
TJ = TJ maximum  
Forward slope resistance  
m  
pF  
Maximum junction capacitance per leg  
Typical series inductance per leg  
Maximum voltage rate of change  
CT  
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C  
Measured lead to lead 5 mm from package body  
Rated VR  
1300  
8.0  
LS  
nH  
dV/dt  
10 000  
V/μs  
Note  
(1)  
Pulse width < 300 μs, duty cycle < 2 %  
THERMAL - MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum junction and storage   
temperature range  
TJ, TStg  
-55 to +150  
°C  
Maximum thermal resistance,   
junction to case per leg  
DC operation  
RthJC  
RthCS  
3.25  
0.50  
See fig. 4  
°C/W  
Typical thermal resistance,   
case to heatsink  
Mounting surface, smooth and greased  
2
g
Approximate weight  
Mounting torque  
0.07  
oz.  
minimum  
maximum  
6 (5)  
kgf cm  
(lbf in)  
12 (10)  
32CTQ025SH  
Case style TO-263AB (D2PAK)  
Case style TO-262AA  
32CTQ030SH  
32CTQ025-1H  
32CTQ030-1H  
Marking device  
Revision: 15-Aug-15  
Document Number: 95774  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-32CTQ...SHM3, VS-32CTQ...-1HM3 Series  
www.vishay.com  
Vishay Semiconductors  
1000  
100  
10  
1000  
TJ = 150 °C  
100  
TJ = 125 °C  
10  
TJ = 100 °C  
1
0.1  
TJ = 75 °C  
TJ = 50 °C  
TJ = 25 °C  
TJ = 150 °C  
TJ = 125 °C  
TJ = 25 °C  
0.01  
0.001  
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4  
1.8  
0
5
10  
15  
20  
30  
1.6  
25  
V
FM - Forward Voltage Drop (V)  
VR - Reverse Voltage (V)  
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage  
Fig. 1 - Maximum Forward Voltage Drop Characteristics  
10 000  
TJ = 25 °C  
1000  
100  
0
5
10  
15  
20  
25  
35  
30  
VR - Reverse Voltage (V)  
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage  
10  
1
PDM  
t1  
0.1  
t2  
D = 0.75  
Notes:  
1. Duty factor D = t1/t2  
2. Peak TJ = PDM x ZthJC + TC  
Single pulse  
(thermal resistance)  
D = 0.50  
D = 0.33  
D = 0.25  
D = 0.20  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
t1 - Rectangular Pulse Duration (s)  
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics  
Revision: 15-Aug-15  
Document Number: 95774  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-32CTQ...SHM3, VS-32CTQ...-1HM3 Series  
www.vishay.com  
Vishay Semiconductors  
160  
150  
140  
130  
120  
110  
100  
90  
10  
D = 0.20  
D = 0.25  
D = 0.33  
D = 0.50  
D = 0.75  
8
6
4
2
0
RMS limit  
DC  
DC  
Square wave (D = 0.50)  
80 % rated VR applied  
See note (1)  
80  
0
5
10  
15  
20  
25  
0
5
10  
15  
20  
25  
IF(AV) - Average Forward Current (A)  
IF(AV) - Average Forward Current (A)  
Fig. 5 - Maximum Allowable Case Temperature vs.  
Average Forward Current  
Fig. 6 - Forward Power Loss Characteristics  
1000  
At any rated load condition  
and with rated VRRM applied  
following surge  
100  
10  
100  
1000  
10 000  
tp - Square Wave Pulse Duration (µs)  
Fig. 7 - Maximum Non-Repetitive Surge Current  
L
High-speed  
switch  
IRFP460  
D.U.T.  
Freewheel  
diode  
Rg = 25 Ω  
Vd = 25 V  
+
Current  
monitor  
40HFL40S02  
Fig. 8 - Unclamped Inductive Test Circuit  
Note  
(1)  
Formula used: TC = TJ - (Pd + PdREV) x RthJC;  
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);  
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR  
Revision: 15-Aug-15  
Document Number: 95774  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-32CTQ...SHM3, VS-32CTQ...-1HM3 Series  
www.vishay.com  
Vishay Semiconductors  
ORDERING INFORMATION TABLE  
Device code  
VS- 32  
C
T
Q
030  
S
TRL  
H
M3  
1
2
3
4
5
6
7
8
9
10  
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Vishay Semiconductors product  
Current rating (30 A)  
Circuit configuration: C = common cathode  
T = TO-220  
Schottky “Q” series  
025 = 25 V  
030 = 30 V  
Voltage ratings  
• S = D2PAK  
• -1 = TO-262  
8
-
• None = tube  
• TRL = tape and reel (left oriented - for D2PAK only)  
• TRR = tape and reel (right oriented - for D2PAK only)  
H = AEC-Q101 qualified  
9
-
-
10  
M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free  
ORDERING INFORMATION  
PREFERRED P/N  
QUANTITY PER T/R  
MINIMUM ORDER QUANTITY  
PACKAGING DESCRIPTION  
Antistatic plastic tubes  
13" diameter reel  
VS-32CTQ025SHM3  
50  
800  
800  
50  
1000  
800  
VS-32CTQ025STRRHM3  
VS-32CTQ025STRLHM3  
VS-32CTQ025-1HM3  
800  
13" diameter reel  
1000  
1000  
800  
Antistatic plastic tubes  
Antistatic plastic tubes  
13" diameter reel  
VS-32CTQ030SHM3  
50  
VS-32CTQ030STRRHM3  
VS-32CTQ030STRLHM3  
VS-32CTQ030-1HM3  
800  
800  
50  
800  
13" diameter reel  
1000  
Antistatic plastic tubes  
LINKS TO RELATED DOCUMENTS  
Dimensions  
TO-263AB (D2PAK)  
www.vishay.com/doc?95046  
Dimensions  
TO-262AA  
www.vishay.com/doc?95419  
www.vishay.com/doc?95444  
www.vishay.com/doc?95443  
www.vishay.com/doc?95032  
Part marking information  
Part marking information  
Packaging information  
TO-263AB (D2PAK)  
TO-262AA  
Revision: 15-Aug-15  
Document Number: 95774  
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Outline Dimensions  
Vishay Semiconductors  
www.vishay.com  
D2PAK  
DIMENSIONS in millimeters and inches  
Conforms to JEDEC® outline D2PAK (SMD-220)  
B
A
Pad layout  
A
(2)(3)  
E
A
(E)  
c2  
11.00  
MIN.  
(0.43)  
(3)  
D
L1  
4
2
9.65  
MIN.  
(0.38)  
(D1) (3)  
Detail A  
17.90 (0.70)  
15.00 (0.625)  
H
(2)  
1
3
3.81  
MIN.  
L2  
(0.15)  
B
B
2.32  
MIN.  
(0.08)  
A
B
2.64 (0.103)  
2.41 (0.096)  
(3)  
E1  
2 x b2  
2 x b  
C
c
View A - A  
0.004 M  
Base  
Metal  
0.010 M  
M
B
A
Plating  
(4)  
b1, b3  
2 x  
e
H
Gauge  
plane  
(4)  
c1  
(c)  
B
0° to 8°  
Seating  
plane  
L3  
A1  
Lead tip  
(b, b2)  
L
L4  
Section B - B and C - C  
Scale: None  
Detail “A”  
Rotated 90 °CW  
Scale: 8:1  
MILLIMETERS  
INCHES  
MILLIMETERS  
INCHES  
SYMBOL  
NOTES  
SYMBOL  
NOTES  
MIN.  
4.06  
0.00  
0.51  
0.51  
1.14  
1.14  
0.38  
0.38  
1.14  
8.51  
MAX.  
4.83  
0.254  
0.99  
0.89  
1.78  
1.73  
0.74  
0.58  
1.65  
9.65  
MIN.  
0.160  
0.000  
0.020  
0.020  
0.045  
0.045  
0.015  
0.015  
0.045  
0.335  
MAX.  
0.190  
0.010  
0.039  
0.035  
0.070  
0.068  
0.029  
0.023  
0.065  
0.380  
MIN.  
6.86  
9.65  
7.90  
MAX.  
8.00  
MIN.  
MAX.  
0.315  
0.420  
0.346  
A
A1  
b
D1  
E
0.270  
0.380  
0.311  
3
2, 3  
3
10.67  
8.80  
E1  
e
b1  
b2  
b3  
c
4
4
4
2
2.54 BSC  
0.100 BSC  
H
14.61  
1.78  
-
15.88  
2.79  
1.65  
1.78  
0.575  
0.070  
-
0.625  
0.110  
0.066  
0.070  
L
L1  
L2  
L3  
L4  
3
c1  
c2  
D
1.27  
0.050  
0.25 BSC  
0.010 BSC  
4.78  
5.28  
0.188  
0.208  
Notes  
(1)  
Dimensioning and tolerancing per ASME Y14.5 M-1994  
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at  
the outmost extremes of the plastic body  
(2)  
(3)  
(4)  
(5)  
(6)  
(7)  
Thermal pad contour optional within dimension E, L1, D1 and E1  
Dimension b1 and c1 apply to base metal only  
Datum A and B to be determined at datum plane H  
Controlling dimension: inch  
Outline conforms to JEDEC® outline TO-263AB  
Revision: 08-Jul-15  
Document Number: 95046  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Outline Dimensions  
Vishay Semiconductors  
TO-262  
DIMENSIONS in millimeters and inches  
Modified JEDEC outline TO-262  
(2) (3)  
E
A
(Datum A)  
B
A
c2  
E
A
(3)  
L1  
D
Seating  
plane  
D1(3)  
1
2
3
C
C
L2  
B
B
L (2)  
A
c
(3)  
E1  
3 x b2  
3 x b  
A1  
Section A - A  
2 x e  
Base  
metal  
(4)  
b1, b3  
Plating  
c
M
M
B
0.010  
A
Lead assignments  
c1  
(4)  
Diodes  
1. - Anode (two die)/open (one die)  
2., 4. - Cathode  
3. - Anode  
(b, b2)  
Lead tip  
Section B - B and C - C  
Scale: None  
MILLIMETERS  
INCHES  
SYMBOL  
NOTES  
MIN.  
4.06  
2.03  
0.51  
0.51  
1.14  
1.14  
0.38  
0.38  
1.14  
8.51  
6.86  
9.65  
7.90  
MAX.  
4.83  
3.02  
0.99  
0.89  
1.78  
1.73  
0.74  
0.58  
1.65  
9.65  
8.00  
10.67  
8.80  
MIN.  
0.160  
0.080  
0.020  
0.020  
0.045  
0.045  
0.015  
0.015  
0.045  
0.335  
0.270  
0.380  
0.311  
MAX.  
0.190  
0.119  
0.039  
0.035  
0.070  
0.068  
0.029  
0.023  
0.065  
0.380  
0.315  
0.420  
0.346  
A
A1  
b
b1  
b2  
b3  
c
4
4
4
c1  
c2  
D
2
3
D1  
E
2, 3  
3
E1  
e
2.54 BSC  
0.100 BSC  
L
13.46  
-
14.10  
1.65  
3.71  
0.530  
-
0.555  
0.065  
0.146  
L1  
L2  
3
3.56  
0.140  
Notes  
(1)  
(4)  
(5)  
(6)  
Dimensioning and tolerancing as per ASME Y14.5M-1994  
Dimension D and E do not include mold flash. Mold flash shall  
not exceed 0.127 mm (0.005") per side. These dimensions are  
measured at the outmost extremes of the plastic body  
Dimension b1 and c1 apply to base metal only  
Controlling dimension: inches  
Outline conform to JEDEC TO-262 except A1 (maximum), b  
(minimum) and D1 (minimum) where dimensions derived the  
actual package outline  
(2)  
(3)  
Thermal pad contour optional within dimension E, L1, D1 and E1  
Document Number: 95419  
Revision: 04-Oct-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of  
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding  
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a  
particular product with the properties described in the product specification is suitable for use in a particular application.  
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over  
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.  
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for  
such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document  
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Revision: 13-Jun-16  
Document Number: 91000  
1

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VS-36MB40A

Bridge Rectifier Diode, 1 Phase, 35A, 400V V(RRM), Silicon, ROHS COMPLIANT, D-34, 4 PIN
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VS-36MB60A

Bridge Rectifier Diode, 1 Phase, 35A, 600V V(RRM), Silicon, ROHS COMPLIANT, D-34, 4 PIN
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VS-36MB80A

Single Phase Bridge (Power Modules), 25 A/35 A
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