VS-40EPF0-M3 [VISHAY]
Fast Soft Recovery Rectifier Diode, 40 A;
| 型号： | VS-40EPF0-M3 |
| 厂家： | 
VISHAY |
| 描述： | Fast Soft Recovery Rectifier Diode, 40 A |
| 文件： | 总7页 (文件大小：212K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-40EPF0.-M3 Series
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 40 A
FEATURES
• Glass passivated pellet chip junction
Base
cathode
• 150 °C max. operating junction temperature
2
• Low forward voltage drop and short reverse
recovery time
1
Available
• Designed and qualified according to
JEDEC®-JESD 47
TO-247AC 2L
1
3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Cathode
Anode
APPLICATIONS
PRIMARY CHARACTERISTICS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
IF(AV)
40 A
VR
VF at IF
200 V, 400 V, 600 V
1.25 V
IFSM
475 A
DESCRIPTION
trr
60 ns
The VS-40EPF006-M3 and VS-40APF006-M3 fast soft
recovery rectifier series has been optimized for combined
short reverse recovery time and low forward voltage drop.
TJ max.
150 °C
Package
Circuit configuration
Snap factor
TO-247AC 2L
Single
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
0.5
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
VF
CHARACTERISTICS
VALUES
UNITS
Sinusoidal waveform
40
200 to 600
475
A
V
A
10 A, TJ = 25 °C
1 A, - 100 A/μs
1
V
trr
60
ns
°C
TJ
-40 to +150
VOLTAGE RATINGS
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
IRRM
AT 150 °C
mA
PART NUMBER
PEAK REVERSE VOLTAGE
V
VS-40EPF02-M3
VS-40EPF04-M3
VS-40EPF06-M3
200
400
600
300
500
700
8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
TC = 105 °C, 180° conduction half sine wave
VALUES
40
UNITS
Maximum average forward current
IF(AV)
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
400
A
Maximum peak one cycle
non-repetitive surge current
IFSM
475
800
Maximum I2t for fusing
I2t
A2s
1131
11 310
Maximum I2√t for fusing
I2√t
A2√s
Revision: 29-Nov-2019
Document Number: 94102
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40EPF0.-M3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
40 A, TJ = 25 °C
VALUES
1.25
4.4
UNITS
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
VFM
rt
V
mΩ
V
TJ = 150 °C
VF(TO)
1.1
TJ = 25 °C
0.1
Maximum reverse leakage current
IRM
VR = Rated VRRM
mA
TJ = 150 °C
8.0
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL TEST CONDITIONS
VALUES
180
UNITS
ns
IFM
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
trr
IF at 40 Apk
trr
Irr
Qrr
S
25 A/μs
25 °C
3.2
A
t
dir
dt
0.5
μC
Qrr
0.5
IRM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
-40 to +150
°C
Maximum thermal resistance,
junction to case
RthJC
RthJA
RthCS
DC operation
0.6
40
Maximum thermal resistance,
junction to ambient
°C/W
Typical thermal resistance,
case to heatsink
Mounting surface, smooth and greased
0.2
6
g
Approximate weight
0.21
oz.
minimum
maximum
6 (5)
kgf · cm
(lbf · in)
Mounting torque
Marking device
12 (10)
40EPF02
40EPF04
40EPF06
Case style TO-247AC 2L
Revision: 29-Nov-2019
Document Number: 94102
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40EPF0.-M3 Series
www.vishay.com
Vishay Semiconductors
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
40EPF.. Series
RthJC (DC) = 0.6 K/W
180°
120°
90°
60°
30°
DC
Ø
Conduction angle
RMS limit
Ø
Conduction period
120°
180°
60°
40EPF.. Series
TJ = 150 °C
30°
90°
0
0
0
5
10 15 20 25 30 35 40 45
0
10
20
30
40
50
60
70
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
150
140
130
120
110
100
90
450
400
350
300
250
200
150
100
At any rated load condition and with
rated VRRM applied following surge.
40EPF.. Series
RthJC (DC) = 0.6 K/W
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Ø
Conduction period
30°
90°
120°
60°
40EPF.. Series
DC
60
180°
50
10
20
30
40
70
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
60
50
40
30
20
10
0
500
180°
120°
90°
60°
30°
Maximum non-repetitive surge current
versus pulse train duration.
450
400
350
300
250
200
150
100
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
RMS limit
Ø
Conduction angle
40EPF.. Series
TJ = 150 °C
40EPF.. Series
5
10
15
20
25
30
35
40
0.01
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 29-Nov-2019
Document Number: 94102
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40EPF0.-M3 Series
www.vishay.com
Vishay Semiconductors
1000
100
10
TJ = 25 °C
TJ = 150 °C
40EPF.. Series
1
0
1
2
3
4
5
6
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
225
200
175
150
125
100
75
4
IFM = 80 A
IFM = 40 A
IFM = 20 A
40EPF.. Series
TJ = 25 °C
IFM = 80 A
3
2
1
0
IFM = 40 A
IFM = 10 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
40EPF.. Series
IFM = 5 A
IFM = 1 A
50
IFM = 1 A
120
TJ = 25 °C
25
0
40
80
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
0.8
10
40EPF.. Series
TJ = 150 °C
IFM = 80 A
FM = 40 A
IFM = 20 A
40EPF.. Series
TJ = 150 °C
I
IFM = 80 A
8
0.6
0.4
0.2
0
I
FM = 10 A
I
FM = 5 A
IFM = 1 A
6
4
2
0
IFM = 40 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
120
0
40
80
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
Revision: 29-Nov-2019
Document Number: 94102
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40EPF0.-M3 Series
www.vishay.com
Vishay Semiconductors
25
20
15
10
5
50
40
30
20
10
0
40EPF.. Series
TJ = 150 °C
40EPF.. Series
TJ = 25 °C
IFM = 80 A
IFM = 80 A
IFM = 40 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
IFM = 40 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
0
0
40
80
120
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
1
Steady state value
(DC operation)
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
40EPF.. Series
Single pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Revision: 29-Nov-2019
Document Number: 94102
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40EPF0.-M3 Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
40
E
P
F
06 -M3
1
2
3
4
5
6
7
1
-
-
-
Vishay Semiconductors product
Current rating (40 = 40 A)
Circuit configuration:
E = single diode
2
3
4
5
-
-
Package:
P = TO-247AC 2L
Type of silicon:
F = fast diode
02 = 200 V
04 = 400 V
06 = 600 V
6
7
-
-
Voltage code x 100 = VRRM
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-40EPF02-M3
VS-40EPF04-M3
VS-40EPF06-M3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
25
25
25
500
500
500
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96144
Part marking information
SPICE model
www.vishay.com/doc?95648
www.vishay.com/doc?95274
Revision: 29-Nov-2019
Document Number: 94102
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
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