VS-40HFR40M [VISHAY]

DIODE GEN PURP 400V 40A DO203AB;
VS-40HFR40M
型号: VS-40HFR40M
厂家: VISHAY    VISHAY
描述:

DIODE GEN PURP 400V 40A DO203AB

文件: 总9页 (文件大小:164K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
VS-40HF(R) Series  
Vishay Semiconductors  
www.vishay.com  
Standard Recovery Diodes,  
(Stud Version), 40 A  
FEATURES  
• High surge current capability  
• Stud cathode and stud anode version  
• Leaded version available  
• Types up to 1600 V VRRM  
• Designed and qualified for multiple level  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
DO-5 (DO-203AB)  
TYPICAL APPLICATIONS  
• Battery charges  
• Converters  
PRIMARY CHARACTERISTICS  
IF(AV)  
40 A  
• Power supplies  
• Machine tool controls  
• Welding  
Package  
DO-5 (DO-203AB)  
Single  
Circuit configuration  
MAJOR RATINGS AND CHARACTERISTICS  
40HF(R)  
PARAMETER  
TEST CONDITIONS  
UNITS  
10 TO 120  
140/160  
40  
40  
140  
A
°C  
A
IF(AV)  
IF(RMS)  
IFSM  
TC  
110  
62  
62  
50 Hz  
60 Hz  
50 Hz  
60 Hz  
Range  
570  
570  
A
595  
595  
1600  
1600  
I2t  
A2s  
1450  
1450  
VRRM  
TJ  
100 to 1200  
-65 to 190  
1400 to 1600  
-65 to 160  
V
°C  
ELECTRICAL SPECIFICATIONS  
VOLTAGE RATINGS  
VRRM, MAXIMUM REPETITIVE  
VRSM, MAXIMUM NON-REPETITIVE  
IRRM MAXIMUM  
AT TJ = TJ MAXIMUM  
mA  
VOLTAGE  
CODE  
TYPE NUMBER  
PEAK REVERSE VOLTAGE  
PEAK REVERSE VOLTAGE  
V
V
10  
20  
100  
200  
300  
200  
40  
400  
500  
60  
600  
700  
9
VS-40HF(R)  
80  
800  
900  
100  
120  
140  
160  
1000  
1200  
1400  
1600  
1100  
1300  
1500  
1700  
4.5  
Revision: 07-Sep-17  
Document Number: 93513  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-40HF(R) Series  
Vishay Semiconductors  
www.vishay.com  
FORWARD CONDUCTION  
40HF(R)  
UNITS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
10 TO 120 140/160  
40  
40  
A
°C  
A
Maximum average forward current   
IF(AV)  
180° conduction, half sine wave  
at case temperature  
140  
110  
Maximum RMS forward current  
IF(RMS)  
62  
570  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
No voltage   
reapplied  
595  
Maximum peak, one-cycle forward,  
non-repetitive surge current  
IFSM  
A
480  
100 % VRRM  
reapplied  
500  
Sinusoidal half wave,  
initial TJ = TJ maximum  
1600  
1450  
1150  
1050  
16 000  
No voltage   
reapplied  
Maximum I2t for fusing  
I2t  
A2s  
100 % VRRM  
reapplied  
Maximum I2t for fusing  
I2t  
t = 0.1 ms to 10 ms, no voltage reapplied  
A2s  
Value of threshold voltage  
VF(TO)  
0.65  
0.76  
4.29  
3.8  
(up to 1200 V)  
TJ = TJ maximum  
V
Value of threshold voltage  
(for 1400 V/1600 V)  
VF(TO)  
rf  
Value of forward slope resistance  
(up to 1200 V)  
TJ = TJ maximum  
m  
Value of forward slope resistance  
(for 1400 V/1600 V)  
rf  
Maximum forward voltage drop  
VFM  
Ipk = 125 A, TJ = 25 °C, tp = 400 μs rectangular wave  
1.30  
1.50  
V
THERMAL AND MECHANICAL SPECIFICATIONS  
40HF(R)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
UNITS  
10 to 120 140 to 160  
Maximum junction operating and  
TJ, TStg  
RthJC  
-65 to 190 -65 to 160  
°C  
storage temperature range  
Maximum thermal resistance,  
junction to case  
DC operation  
0.95  
0.25  
K/W  
Maximum thermal resistance,  
case to heatsink  
RthCS  
Mounting surface, smooth, flat and greased  
Not lubricated thread, tighting on nut (1)  
Lubricated thread, tighting on nut (1)  
Not lubricated thread, tighting on hexagon (2)  
Lubricated thread, tighting on hexagon (2)  
3.4 (30)  
2.3 (20)  
4.2 (37)  
3.2 (28)  
17  
Maximum allowable mounting  
torque (+0 %, -10 %)  
N · m  
(lbf · in)  
g
Approximate weight  
Case style  
0.6  
oz.  
See dimensions - link at the end of datasheet  
DO-5 (DO-203AB)  
Notes  
(1)  
Recommended for pass-through holes  
Recommended for holed threaded heatsinks  
(2)  
RthJC CONDUCTION  
CONDUCTION ANGLE  
SINUSOIDAL CONDUCTION  
RECTANGULAR CONDUCTION  
TEST CONDITIONS  
UNITS  
180°  
120°  
90°  
0.14  
0.16  
0.21  
0.30  
0.50  
0.10  
0.17  
0.22  
0.31  
0.50  
TJ = TJ maximum  
K/W  
60°  
30°  
Note  
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC  
Revision: 07-Sep-17  
Document Number: 93513  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-40HF(R) Series  
Vishay Semiconductors  
www.vishay.com  
190  
180  
170  
160  
150  
140  
130  
160  
150  
140  
130  
120  
110  
100  
40HF(R) Series (1400 V, 1600 V)  
40HF(R) Series (100 V to 1200 V)  
Conduction Angle  
Conduction Angle  
30 °  
60 °  
30 °  
60 °  
90 °  
90 °  
120 °  
120 °  
180 °  
180 °  
0
5
10 15 20 25 30 35 40 45  
0
5
10 15 20 25 30 35 40 45  
Average Forward Current (A)  
Average Forward Current (A)  
Fig. 1 - Current Ratings Characteristics  
Fig. 3 - Current Ratings Characteristics  
190  
180  
170  
160  
150  
140  
130  
120  
160  
150  
140  
130  
120  
110  
100  
90  
40HF(R) Series (100 V to 1200 V)  
40HF(R) Series (1400 V, 1600 V)  
Conduction Period  
Conduction Period  
30°  
30 °  
60 °  
60 °  
90°  
90 °  
120 °  
120 °  
180 °  
DC  
DC  
60  
180 °  
40  
80  
0
10  
20  
30  
50  
70  
0
10  
20  
30  
40  
50  
60  
70  
Average Forward Current (A)  
Average Forward Current (A)  
Fig. 2 - Current Ratings Characteristics  
Fig. 4 - Current Ratings Characteristics  
60  
180°  
120°  
Rth  
1.5 K/W  
2 K/W  
S
A
= 1 K/W - Delta R  
50  
40  
30  
20  
10  
90°  
60°  
30°  
3 K/W  
5 K/W  
7 K/W  
RMS Limit  
Conduction Angle  
10 K/W  
40HF(R) Series  
(100 V to 1200 V)  
Tj = 190 °C  
0
0
5
10  
15  
20  
25  
30  
35  
40  
40  
80  
120  
160  
200  
Average Forward Current (A)  
Maximum Allowable Ambient Temperature (°C)  
Fig. 5 - Forward Power Loss Characteristics  
Revision: 07-Sep-17  
Document Number: 93513  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-40HF(R) Series  
Vishay Semiconductors  
www.vishay.com  
60  
DC  
180°  
Rth  
1.5 K/W  
2 K/W  
S
A
= 1 K/W - Delta R  
120°  
90°  
60°  
30°  
50  
40  
30  
20  
10  
3 K/W  
5 K/W  
7 K/W  
RMS Limit  
Conduction Period  
10 K/W  
40HF(R) Series  
(100 V to 1200 V)  
Tj = 190 °C  
0
0
10  
20  
30  
40  
50  
60  
70  
Maximum Allowable Ambient Temperature (°C)  
Fig. 6 - Forward Power Loss Characteristics  
40  
80  
120  
160  
200  
Average Forward Current (A)  
50  
45  
40  
35  
30  
25  
20  
15  
10  
180°  
120°  
90°  
60°  
30°  
1.5 K/W  
2 K/W  
R
th  
3 K/W  
5 K/W  
S
A
= 1 K/W - Delta R  
RMS Limit  
7 K/W  
10 K/W  
Conduction Angle  
40HF(R) Series  
(1400 V, 1600 V)  
Tj = 160 °C  
5
0
0
10  
20  
30  
40  
25  
50  
75 100 125 150 175 200  
Average Forward Current (A)  
Maximum Allowable Ambient Temperature (°C)  
Fig. 7 - Forward Power Loss Characteristics  
70  
DC  
180°  
120°  
90°  
60°  
30°  
R
60  
50  
40  
30  
20  
10  
th  
1.5 K/W  
S
A
= 1 K/W - Delta R  
2 K/W  
3 K/W  
RMS Limit  
5 K/W  
7 K/W  
Conduction Period  
40HF(R) Series  
(1400 V, 1600 V)  
Tj = 160 °C  
10 K/W  
0
0
10  
20  
30  
40  
50  
60  
70  
40  
80  
120  
160  
Average Forward Current (A)  
Maximum Allowable Ambient Temperature (°C)  
Fig. 8 - Forward Power Loss Characteristics  
Revision: 07-Sep-17  
Document Number: 93513  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-40HF(R) Series  
Vishay Semiconductors  
www.vishay.com  
550  
500  
450  
400  
350  
300  
250  
200  
150  
100  
1000  
100  
10  
At Any Rated Load Condition And With  
Rated Vrrm Applied Following Surge.  
Initial Tj = Tj Max.  
@ 60 Hz 0.0083 s  
@ 50 Hz 0.0100 s  
TJ = 25 °C  
TJ = TJ Max.  
40HF(R) Series  
up to 1200 V  
40HF(R) Series  
1
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
1
10  
100  
Number Of Equal Amplitude  
Half Cycle Current Pulses (N)  
Instantaneous Forward Voltage (V)  
Fig. 9 - Maximum Non-Repetitive Surge Current  
Fig. 11 - Forward Voltage Drop Characteristics  
(Up To 1200 V)  
600  
1000  
100  
10  
Maximum Non Repetitive Surge Current  
Versus Pulse Train Duration.  
Initial Tj = Tj Max.  
550  
500  
450  
400  
350  
300  
250  
200  
150  
100  
TJ = TJ Max.  
No Voltage Reapplied  
Rated Vrrm Reapplied  
TJ = 25 °C  
40HF (R) Series  
40HF(R) Series  
1
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
0.01  
0.1  
1
Pulse Train Duration (s)  
Instantaneous Forward Voltage (V)  
Fig. 10 - Maximum Non-Repetitive Surge Current  
Fig. 12 - Forward Voltage Drop Characteristics  
(For 1400 V/1600 V)  
1
Steady State Value  
(DC Operation)  
0.1  
40HF(R) .. Series  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Square Wave Pulse Duration (s)  
Fig. 13 - Thermal Impedance ZthJC Characteristics  
Revision: 07-Sep-17  
Document Number: 93513  
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-40HF(R) Series  
Vishay Semiconductors  
www.vishay.com  
ORDERING INFORMATION TABLE  
Device code  
VS- 40  
HF  
R
160  
M
1
2
3
4
5
6
1
2
-
-
Vishay Semiconductors product  
40 = standard device  
41 = not isolated lead  
42 = isolated lead with silicone sleeve  
(red = reverse polarity)  
(blue = normal polarity)  
3
4
-
-
HF = standard diode  
None = stud normal polarity (cathode to stud)  
R = stud reverse polarity (anode to stud)  
5
6
-
-
Voltage code x 10 = VRRM (see Voltage Ratings table)  
None = stud base DO-5 (DO-203AB) 1/4" 28UNF-2A  
M = stud base DO-5 (DO-203AB) M6 x 1  
LINKS TO RELATED DOCUMENTS  
Dimensions  
www.vishay.com/doc?95344  
Revision: 07-Sep-17  
Document Number: 93513  
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Outline Dimensions  
Vishay Semiconductors  
DO-203AB (DO-5) for 40HF(R) and 41HF(R) Series  
DIMENSIONS FOR 40HF(R) SERIES in millimeters (inches)  
Ø 14.6 (0.57)  
6.1/7  
(0.24/0.27)  
4 (0.16)  
4 (0.16) MIN.  
25.4 (1) MAX.  
10.8 (0.42)  
11.4 (0.45)  
11.1 0.4  
(0.44 0.02)  
1/4" 28UNF-2A  
for metric devices: M6 x 1  
1.20 (0.04)  
17.40 (0.68)  
Document Number: 95344  
Revision: 29-Sep-08  
For technical questions, contact: indmodules@vishay.com  
www.vishay.com  
1
Outline Dimensions  
Vishay Semiconductors  
DO-203AB (DO-5) for 40HF(R)  
and 41HF(R) Series  
DIMENSIONS FOR 41HF(R) SERIES in millimeters (inches)  
11 (0.43) MAX.  
Ø 6.3 (0.25) MAX.  
107 (4.21)  
MAX.  
118.5 (4.67)  
MAX.  
www.vishay.com  
2
For technical questions, contact: indmodules@vishay.com  
Document Number: 95344  
Revision: 29-Sep-08  
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product  
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in  
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating  
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.  
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited  
to the warranty expressed therein.  
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and  
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of  
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.  
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website  
or for that of subsequent links.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please  
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED  
Revision: 09-Jul-2021  
Document Number: 91000  
1

相关型号:

VS-40HFR60

DIODE GEN PURP 600V 40A DO203AB
VISHAY

VS-40HFR60M

DIODE GEN PURP 600V 40A DO203AB
VISHAY

VS-40HFR80

DIODE GEN PURP 800V 40A DO203AB
VISHAY

VS-40HFR80M

DIODE GEN PURP 800V 40A DO203AB
VISHAY

VS-40L15CT-1-M3

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15V V(RRM), Silicon, TO-262AA,
VISHAY

VS-40L15CT-1PBF

Schottky Rectifier, 2 x 20 A
VISHAY

VS-40L15CT-N3

Schottky Rectifier
VISHAY

VS-40L15CTPBF

Guard ring for enhanced ruggedness and long term reliability
VISHAY

VS-40L15CTPBF_15

Schottky Rectifier
VISHAY

VS-40L15CTS-M3

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VISHAY

VS-40L15CTSPBF

Schottky Rectifier, 2 x 20 A
VISHAY

VS-40L15CTSTRL-M3

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VISHAY