VS-40L15CTSTRLPBF [VISHAY]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 15V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3;
| 型号： | VS-40L15CTSTRLPBF |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 15V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3 高功率电源 二极管 |
| 文件： | 总8页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-40L15CTSPbF, VS-40L15CT-1PbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 20 A
TO-263AB (D2PAK)
TO-262AA
FEATURES
• 125 °C TJ operation (VR < 5 V)
• Center tap module
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• High frequency operation
Base
common
cathode
Base
common
cathode
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
2
2
• Guard ring for enhanced ruggedness and long term
reliability
2
2
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
1
1
3
3
Common
cathode
Common
Anode
cathode
Anode
Anode
Anode
• AEC-Q101 qualified
VS-40L15CTSPbF
VS-40L15CT-1PbF
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
IF(AV)
2 x 20 A
15 V
DESCRIPTION
VR
The center tap Schottky rectifier module has been optimized
for ultralow forward voltage drop specifically for the OR-ing
of parallel power supplies. The proprietary barrier
technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
VF at IF
see datasheet
600 mA at 100 °C
125 °C
I
RM max.
TJ max.
EAS
10 mJ
Package
TO-263AB (D2PAK), TO-262AA
Diode variation
Common cathode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
40
UNITS
Rectangular waveform
A
V
15
tp = 5 μs sine
700
A
VF
19 Apk, TJ = 125 °C (per leg, typical)
0.25
V
TJ
-55 to +125
°C
VOLTAGE RATINGS
VS-40L15CTSPbF
VS-40L15CT-1PbF
PARAMETER
SYMBOL
TEST CONDITIONS
TJ = 100 °C
UNITS
Maximum DC reverse voltage
VR
15
V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TC = 85 °C, rectangular waveform
VALUES
UNITS
per leg
20
40
Maximum average forward
current, see fig. 5
IF(AV)
per device
A
Following any rated load
condition and with rated
VRRM applied
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
TJ = 25 °C, IAS = 2 A, L = 6 mH
700
330
10
Maximum peak one cycle non-repetitive
surge current per leg, see fig. 7
IFSM
EAS
IAR
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
2
Revision: 15-Aug-15
Document Number: 94217
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40L15CTSPbF, VS-40L15CT-1PbF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
TYP.
MAX.
0.41
0.52
0.33
0.50
10
UNITS
19 A
-
TJ = 25 °C
40 A
-
0.25
0.37
-
Maximum forward voltage drop per leg
See fig. 1
(1)
VFM
V
19 A
TJ = 125 °C
40 A
TJ = 25 °C
TJ = 100 °C
Reverse leakage current per leg
See fig. 2
(1)
IRM
VR = Rated VR
mA
-
600
Threshold voltage
VF(TO)
rt
0.182
7.6
V
TJ = TJ maximum
Forward slope resistance
m
pF
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
-
2000
-
LS
8
nH
dV/dt
10 000
V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
-55 to +125
-55 to +150
UNITS
Maximum junction temperature range
Maximum storage temperature range
TJ
°C
TStg
Maximum thermal resistance,
DC operation
See fig. 4
RthJC
RthCS
RthJA
1.5
0.50
40
junction to case per leg
Typical thermal resistance,
case to heatsink
Mounting surface, smooth and greased
DC operation
°C/W
Maximum thermal resistance,
junction to ambient
2
g
Approximate weight
0.07
oz.
minimum
Mounting torque
6 (5)
kgf cm
(lbf in)
Non-lubricated threads
maximum
12 (10)
Case style TO-263AB (D2PAK)
Case style TO-262AA
40L15CTS
Marking device
40L15CT-1
Revision: 15-Aug-15
Document Number: 94217
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40L15CTSPbF, VS-40L15CT-1PbF
www.vishay.com
Vishay Semiconductors
1000
100
10
1000
TJ = 100 °C
100
TJ = 75 °C
TJ = 50 °C
10
TJ = 125 °C
TJ = 75 °C
TJ = 25 °C
TJ = 25 °C
1
0.1
1
0
3
6
9
12
15
0
0.2 0.4 0.6
0.8 1.0 1.2 1.4
1.6
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10 000
TJ = 25 °C
1000
100
0
5
10
15
20
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
t1
D = 0.75
D = 0.50
t2
0.1
Single pulse
D = 0.33
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
(thermal resistance)
D = 0.25
D = 0.20
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 15-Aug-15
Document Number: 94217
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40L15CTSPbF, VS-40L15CT-1PbF
www.vishay.com
Vishay Semiconductors
100
95
90
85
80
75
70
14
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
12
10
8
RMS Limit
Square wave (D = 0.50)
6
DC
4
2
0
See note (1)
0
12
16
20
24
4
8
0
5
10
15
20
25
30
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
IRFP460
D.U.T.
Freewheel
diode
Rg = 25 Ω
Vd = 25 V
+
Current
monitor
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 15-Aug-15
Document Number: 94217
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40L15CTSPbF, VS-40L15CT-1PbF
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
40
L
15
C
T
S
TRL PbF
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Vishay Semiconductors product
Current rating (40 A)
L = Schottky “L” series
Voltage rating (15 V)
C = common cathode
T = TO-220
S = D2PAK
-1 = TO-262
8
9
-
-
None = tube
TRL = tape and reel (left oriented - for D2PAK only)
TRR = tape and reel (right oriented - for D2PAK only)
PbF = lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-40L15CTSPbF
50
800
800
50
1000
800
Antistatic plastic tubes
13" diameter plastic tape and reel
13" diameter plastic tape and reel
Antistatic plastic tubes
VS-40L15CTSTRRPbF
VS-40L15CTSTRLPbF
VS-40L15CT-1PbF
800
1000
LINKS TO RELATED DOCUMENTS
TO-263AB (D2PAK)
www.vishay.com/doc?95046
Dimensions
TO-262AA
www.vishay.com/doc?95419
www.vishay.com/doc?95008
www.vishay.com/doc?95032
Part marking information
Packaging information
Revision: 15-Aug-15
Document Number: 94217
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
D2PAK, TO-262
DIMENSIONS - D2PAK in millimeters and inches
Conforms to JEDEC outline D2PAK (SMD-220)
B
A
Pad layout
A
(2)(3)
E
A
(E)
c2
110ꢀꢀ
MIN0
(ꢀ0ꢁ3)
(3)
D
L1
ꢁ
2
9065
MIN0
(ꢀ038)
(D1) (3)
Detail A
1709ꢀ (ꢀ07ꢀ)
150ꢀꢀ (ꢀ0625)
H
(2)
1
3
3081
MIN0
L2
(ꢀ015)
B
B
2032
MIN0
(ꢀ0ꢀ8)
A
B
206ꢁ (ꢀ01ꢀ3)
20ꢁ1 (ꢀ0ꢀ96)
(3)
E1
2 x b2
2 x b
C
c
View A - A
ꢀ0ꢀꢀꢁ M
Base
Metal
ꢀ0ꢀ1ꢀ M
M
B
A
Plating
(ꢁ)
b1, b3
2 x
e
H
Gauge
plane
(ꢁ)
c1
(c)
B
ꢀ° to 8°
L3
Seating
plane
Lead assignments
A1
Lead tip
(b, b2)
L
Diodes
Lꢁ
Detail “A”
Rotated 9ꢀ °CW
Scale: 8:1
Section B - B and C - C
Scale: None
10 - Anode (two die)/open (one die)
20, ꢁ0 - Cathode
30 - Anode
MILLIMETERS
SYMBOL
INCHES
MILLIMETERS
INCHES
NOTES
SYMBOL
NOTES
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
MAX.
4.83
0.254
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
MIN.
6.86
9.65
7.90
MAX.
8.00
MIN.
MAX.
0.315
0.420
0.346
A
A1
b
D1
E
0.270
0.380
0.311
3
2, 3
3
10.67
8.80
E1
e
b1
b2
b3
c
4
4
4
2
2.54 BSC
0.100 BSC
H
14.61
1.78
-
15.88
2.79
1.65
1.78
0.575
0.070
-
0.625
0.110
0.066
0.070
L
L1
L2
L3
L4
3
c1
c2
D
1.27
0.050
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
Notes
(1)
(7)
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Outline conforms to JEDEC outline TO-263AB
(2)
(3)
(4)
(5)
(6)
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Document Number: 95014
Revision: 31-Mar-09
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Outline Dimensions
Vishay Semiconductors
D2PAK, TO-262
DIMENSIONS - TO-262 in millimeters and inches
Modified JEDEC outline TO-262
(2) (3)
E
A
(Datum A)
B
A
c2
E
A
(3)
L1
D
Seating
plane
D1(3)
1
2
3
C
C
L2
B
B
L (2)
A
c
(3)
E1
3 x b2
3 x b
A1
Section A - A
2 x e
Base
metal
(ꢁ)
b1, b3
Plating
c
M
M
B
ꢀ0ꢀ1ꢀ
A
Lead assignments
c1
(ꢁ)
Diodes
10 - Anode (two die)/open (one die)
20, ꢁ0 - Cathode
30 - Anode
(b, b2)
Lead tip
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
SYMBOL
NOTES
MIN.
4.06
2.03
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
6.86
9.65
7.90
MAX.
4.83
3.02
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
8.00
10.67
8.80
MIN.
0.160
0.080
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
0.270
0.380
0.311
MAX.
0.190
0.119
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
0.315
0.420
0.346
A
A1
b
b1
b2
b3
c
4
4
4
c1
c2
D
2
3
D1
E
2, 3
3
E1
e
2.54 BSC
0.100 BSC
L
13.46
-
14.10
1.65
3.71
0.530
-
0.555
0.065
0.146
L1
L2
3
3.56
0.140
Notes
(1)
(6)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Outline conform to JEDEC TO-262 except A1 (maximum), b
(minimum) and D1 (minimum) where dimensions derived the
actual package outline
(2)
(3)
(4)
(5)
Controlling dimension: inches
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2
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Document Number: 95014
Revision: 31-Mar-09
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Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
相关型号：
VS-40L15CTSTRR-M3
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VISHAY
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