VS-48CTQ060PBF [VISHAY]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 60V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3;
| 型号： | VS-48CTQ060PBF |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 60V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 局域网 二极管 |
| 文件： | 总7页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-48CTQ060PbF, VS-48CTQ060-N3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 20 A
FEATURES
• Low forward voltage drop
Base
common
cathode
2
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
Anode
Anode
2
Common
cathode
1
3
• 150 °C TJ operation
TO-220AB
• High frequency operation
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
PRODUCT SUMMARY
Package
TO-220AB
2 x 20 A
60 V
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
IF(AV)
VR
DESCRIPTION
VF at IF
0.58 V
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
I
RM max.
89 mA at 125 °C
150 °C
TJ max.
Diode variation
EAS
Common cathode
13 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
40
UNITS
Rectangular waveform
A
V
60
tp = 5 μs sine
1000
A
VF
20 Apk, TJ = 125 °C (per leg)
Range
0.58
V
TJ
- 55 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-48CTQ060PbF VS-48CTQ060-N3
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
60
60
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average
forward current
See fig. 5
per leg
20
IF(AV)
50 % duty cycle at TC = 111 °C, rectangular waveform
per device
40
A
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Following any rated
loadconditionandwith
rated VRRM applied
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
1000
IFSM
260
13
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
EAS
IAR
TJ = 25 °C, IAS = 1.50 A, L = 11.5 mH
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1.50
Revision: 29-Aug-11
Document Number: 94229
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-48CTQ060PbF, VS-48CTQ060-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
0.61
0.83
0.58
0.75
2
UNITS
20 A
TJ = 25 °C
40 A
Maximum forward voltage drop per leg
See fig. 1
(1)
VFM
V
20 A
TJ = 125 °C
40 A
TJ = 25 °C
TJ = 125 °C
Maximum reverse leakage current per leg
See fig. 2
(1)
IRM
V
R = Rated VR
mA
89
Threshold voltage
VF(TO)
rt
0.37
8.26
1220
8.0
V
TJ = TJ maximum
Forward slope resistance
m
pF
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
LS
nH
dV/dt
10 000
V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 55 to 150
°C
Maximum thermal resistance,
junction to case per leg
2.0
1.0
RthJC
DC operation
Maximum thermal resistance,
junction to case per package
°C/W
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
0.50
2
g
Approximate weight
0.07
oz.
minimum
maximum
6 (5)
kgf · cm
(lbf · in)
Mounting torque
Marking device
12 (10)
Case style TO-220AB
48CTQ060
Revision: 29-Aug-11
Document Number: 94229
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-48CTQ060PbF, VS-48CTQ060-N3
www.vishay.com
Vishay Semiconductors
1000
100
10
1000
TJ = 150 °C
100
TJ = 125 °C
10
TJ = 100 °C
TJ = 75 °C
1
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
TJ = 50 °C
0.1
TJ = 25 °C
0.01
1
0.001
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
0
10
20
30
40
50
60
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
10 000
1000
TJ = 25 °C
100
0
10
20
30
40
50
60
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
1
PDM
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t1
0.1
0.01
t2
Single pulse
(thermal resistance)
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 29-Aug-11
Document Number: 94229
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-48CTQ060PbF, VS-48CTQ060-N3
www.vishay.com
Vishay Semiconductors
150
140
130
120
110
100
90
20
D = 0.20
D = 0.25
D = 0.33
15
DC
D = 0.50
D = 0.75
10
5
RMS limit
Square wave (D = 0.50)
80 % rated VR applied
DC
See note (1)
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
IRFP460
D.U.T.
Freewheel
diode
Rg = 25 Ω
Vd = 25 V
+
Current
monitor
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 10 V
Revision: 29-Aug-11
Document Number: 94229
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-48CTQ060PbF, VS-48CTQ060-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
48
C
T
Q
060 PbF
1
2
3
4
5
6
7
-
-
-
Vishay Semiconductors product
Current rating (40 A)
Circuit configuration
C = Common cathode
Package
1
2
3
-
4
T = TO-220
5
6
7
-
-
-
Schottky “Q” series
Voltage rating (060 = 60 V)
Environmental digit
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-48CTQ060PbF
VS-48CTQ060-N3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
50
50
1000
1000
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95222
www.vishay.com/doc?95225
TO-220AB PbF
TO-220AB -N3
Part marking information
SPICE model
www.vishay.com/doc?95028
www.vishay.com/doc?95424
Revision: 29-Aug-11
Document Number: 94229
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AB
DIMENSIONS in millimeters and inches
B
Seating
plane
A
A
(6)
Thermal pad
E
Ø P
0.014 B A
A
(E)
M
M
(7)
E2
A1
1
3
Q
2
D
D
C
(6)
(H1)
H1
(2)
L1
(7)
C
(6)
D2
D
Detail B
(6)
D1
3 x b
3 x b2
1
3
2
Detail B
C
E1 (6)
L
(b, b2)
b1, b3
Base metal
Plating
View A - A
c1
(4)
c
c
A
2 x e
e1
(4)
A2
Section C - C and D - D
M
M
0.015 B A
Lead assignments
Lead tip
Diodes
Conforms to JEDEC outline TO-220AB
1. - Anode/open
2. - Cathode
3. - Anode
MILLIMETERS
INCHES
MILLIMETERS
INCHES
MIN.
0.398
0.270
-
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.25
1.14
2.56
0.69
0.38
1.20
1.14
0.36
0.36
14.85
8.38
11.68
MAX.
4.65
1.40
2.92
1.01
0.97
1.73
1.73
0.61
0.56
15.25
9.02
12.88
MIN.
0.167
0.045
0.101
0.027
0.015
0.047
0.045
0.014
0.014
0.585
0.330
0.460
MAX.
0.183
MIN.
10.11
6.86
-
MAX.
10.51
8.89
0.76
2.67
5.28
6.48
14.02
3.82
3.73
3.00
MAX.
0.414
0.350
0.030
0.105
0.208
0.255
0.552
0.150
0.147
0.118
A
A1
A2
b
E
E1
E2
e
3, 6
6
0.055
0.115
0.040
0.038
0.068
0.068
0.024
0.022
0.600
0.355
0.507
7
2.41
4.88
6.09
13.52
3.32
3.54
2.60
0.095
0.192
0.240
0.532
0.131
0.139
0.102
b1
b2
b3
c
c1
D
4
4
e1
H1
L
6, 7
2
L1
Ø P
Q
4
3
D1
D2
90° to 93°
90° to 93°
6
Notes
(1)
(2)
(3)
(7)
(8)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Lead dimension and finish uncontrolled in L1
Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
Dimension b1, b3 and c1 apply to base metal only
Controlling dimensions: inches
Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
(4)
(5)
(6)
Thermal pad contour optional within dimensions E, H1, D2 and
E1
Document Number: 95222
Revision: 08-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
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Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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