VS-50MT060WHTAPBF [VISHAY]
Insulated Gate Bipolar Transistor,;
| 型号： | VS-50MT060WHTAPBF |
| 厂家： | 
VISHAY |
| 描述： | Insulated Gate Bipolar Transistor, 栅 |
| 文件： | 总7页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-50MT060WHTAPbF
www.vishay.com
Vishay Semiconductors
“Half Bridge” IGBT MTP (Warp Speed IGBT), 114 A
FEATURES
• Gen 4 warp speed IGBT technology
• HEXFRED® antiparallel diodes with ultrasoft
reverse recovery
• Very low conduction and switching losses
• Optional SMD thermistor (NTC)
• Very low junction to case thermal resistance
• UL approved file E78996
MTP
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
BENEFITS
VCES
600 V
2.3 V
• Optimized for welding, UPS and SMPS applications
• Low EMI, requires less snubbing
VCE(on) typical at VGE = 15 V
I
C at TC = 25 °C
Speed
114 A
30 kHz to 100 kHz
MTP
• Direct mounting to heatsink
Package
• PCB solderable terminals
Circuit configuration
Half bridge
• Very low stray inductance design for high speed operation
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
600
114
50
UNITS
Collector to emitter voltage
VCES
V
TC = 25 °C
C = 109 °C
Continuous collector current
IC
T
Pulsed collector current
Peak switching current
ICM
ILM
350
350
34
A
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
IF
TC = 109 °C
IFM
200
20
VGE
VISOL
V
RMS isolation voltage
Any terminal to case, t = 1 min
TC = 25 °C
2500
658
263
Maximum power dissipation
PD
W
TC = 100 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
VGE = 0 V, IC = 500 μA
VGE = 15 V, IC = 50 A
MIN.
TYP.
-
MAX.
UNITS
Collector to emitter breakdown voltage V(BR)CES
600
-
V
-
-
-
3
-
-
-
-
-
-
2.3
2.5
1.72
-
3.15
3.2
Collector to emitter voltage
VCE(on)
VGE = 15 V, IC = 100 A
V
VGE = 15 V, IC = 50 A, TJ = 150 °C
2.17
6
Gate threshold voltage
VGE(th)
ICES
IC = 0.5 mA
VGE = 0 V, IC = 600 A
-
0.4
Collector to emitter leaking current
mA
VGE = 0 V, IC = 600 A, TJ = 150 °C
IF = 50 A, VGE = 0 V
-
10
1.58
1.49
1.9
-
1.80
1.68
2.17
250
Diode forward voltage drop
VFM
IGES
IF = 50 A, VGE = 0 V, TJ = 150 °C
IF = 100 A, VGE = 0 V, TJ = 25 °C
V
Gate to emitter leakage current
VGE
=
20 V
nA
Revision: 09-Oct-17
Document Number: 94468
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-50MT060WHTAPbF
www.vishay.com
Vishay Semiconductors
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
331
44
MAX.
UNITS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Qg
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
385
IC = 52 A
V
V
Qge
Qgc
Eon
Eoff
Ets
52
nC
CC = 400 V
GE = 15 V
133
0.26
1.2
176
Internal gate resistors (see electrical diagram)
C = 50 A, VCC = 480 V, VGE = 15 V, L = 200 μH
energy losses include tail and diode reverse
recovery, TJ = 25 °C
-
I
-
mJ
mJ
pF
1.46
0.73
1.66
2.39
7100
510
140
82
-
-
Turn-on switching loss
Turn-off switching loss
Total switching loss
Eon
Eoff
Ets
Internal gate resistors (see electrical diagram)
C = 50 A, VCC = 480 V, VGE = 15 V, L = 200 μH
energy losses include tail and diode reverse
recovery, TJ = 150 °C
I
-
-
Input capacitance
Cies
Coes
Cres
trr
-
VGE = 0 V
Output capacitance
V
CC = 30 V
-
f = 1.0 MHz
Reverse transfer capacitance
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
-
97
10.6
514
153
14.8
1132
ns
A
VCC = 200 V, IC = 50 A
dI/dt = 200 A/μs
Irr
8.3
Qrr
340
137
12.7
870
nC
ns
A
trr
VCC = 200 V, IC = 50 A
dI/dt = 200 A/μs
TJ = 125 °C
Irr
Qrr
nC
THERMISTOR SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNITS
(1)
Resistance
R0
T0 = 25 °C
-
30
-
k
Sensitivity index of the
thermistor material
T0 = 25 °C
T1 = 85 °C
(1)(2)
-
4000
-
K
Notes
(1)
T0, T1 are thermistor´s temperatures
R
1
1
0
(2)
------ = exp ----- – ----- , temperature in Kelvin
T
1
R
T
1
0
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
-40
-40
-40
-
TYP.
MAX. UNITS
IGBT, diode
Thermistor
-
150
Operating junction
temperature range
TJ
-
125
125
0.38
0.8
-
°C
Storage temperature range
TStg
-
IGBT
-
Junction to case
RthJC
RthCS
Diode
-
-
0.06
-
°C/W
mm
Case to sink per module
Clearance (1)
Heatsink compound thermal conductivity = 1 W/mK
External shortest distance in air between 2 terminals
-
5.5
-
Shortest distance along the external surface of the
insulating material between 2 terminals
Creepage (1)
8
-
-
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.
Mounting torque to heatsink
Weight
3
10 ꢀ
66
Nm
g
Note
(1)
Standard version only i.e. without optional thermistor
Revision: 09-Oct-17
Document Number: 94468
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-50MT060WHTAPbF
www.vishay.com
Vishay Semiconductors
100
20
16
12
8
VCC = 400 V
IC = 52 A
VGE = 15 V
20 μs pulse width
TJ = 150 °C
10
TJ = 25 °C
4
1
0
0.1
1.0
10
0
100
200
300
400
94468_01
VCE - Collector to Emitter Voltage (V)
94468_04
OG - Typical Gate Charge (nC)
Fig. 1 - Typical Output Characteristics
Fig. 4 - Typical Gate Charge vs.
Gate to Emitter Votlage
100
120
100
80
60
40
20
0
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
0.4
0.8
1.2
1.6
2.0
2.4
25
50
75
100
125
150
94468_05
VFM - Forward Voltage Drop (V)
94468_02
TC - Case Temperature (°C)
Fig. 2 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
3.0
160
140
120
100
80
VR = 200 V
IF = 50 A, TJ = 125 °C
2.5
2.0
1.5
1.0
IC = 100 A
IC = 50 A
IF = 50 A, TJ = 25 °C
IC = 20 A
60
100
1000
20
40
60
80
100
120
140
160
94468_06
dIF/dt (A/µs)
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt
94468_03
TJ - Junction Temperature (°C)
Fig. 3 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Revision: 09-Oct-17
Document Number: 94468
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-50MT060WHTAPbF
www.vishay.com
Vishay Semiconductors
100
3, 4
VR = 200 V
2
T
IF = 50 A, TJ = 125 °C
11
12
10
R
IF = 50 A, TJ = 25 °C
5, 6
1
Thermistor
option
9
10
1
100
1000
dIF/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Current vs. dIF/dt
94468_07
7, 8
Fig. 9 - Functional Diagram
3, 4
2000
VR = 200 V
10 Ω
1500
11
12
9
IF = 50 A, TJ = 125 °C
10 Ω
10 Ω
10 Ω
1000
500
0
5, 6
IF = 50 A, TJ = 25 °C
10
100
1000
94468_08
dIF/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
7, 8
Fig. 10 - Electrical Diagram
ORDERING INFORMATION TABLE
Device code
VS- 50
MT 060
W
H
T
A
PbF
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
9
-
Vishay Semiconductors product
Current rating (50 = 50 A)
Essential part number
-
-
-
-
Voltage rating (060 = 600 V)
Speed / type (W = warp IGBT)
-
-
-
-
Circuit configuration (H = half bridge)
T = thermistor
A = Al2O3 substrate
Lead (Pb)-free
Revision: 09-Oct-17
Document Number: 94468
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-50MT060WHTAPbF
www.vishay.com
Vishay Semiconductors
CIRCUIT CONFIGURATION
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95175
Revision: 09-Oct-17
Document Number: 94468
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
MTP
DIMENSIONS in millimeters
12 0.ꢀ
ꢀ9.5 0.ꢀ
12 0.ꢀ
ꢀ.0
2.1
Ø 1.1 0.025
z detail
Use self tapping screw
or M 2.5 x X
e.g. M 2.5 x 6 or M 2.5 x 8
according to PCB
thickness used
45 0.1
6ꢀ.5 0.15
0.8 Ra
1.ꢀ
7.4
48.7 0.ꢀ
14.7
15
12
9
ꢀꢀ.2 0.ꢀ
4.2
1.2
6
ꢀ1.8 0.15
2
1
8 7
6 5
4 ꢀ
45°
1ꢀ
10
11
9
12
Dia. 5 (x 4)
27.5 0.ꢀ
Ø 2.1 (x 4)
R 2.6 (x 2)
ꢀ
6
Pins position
with tolerance
11.5
14.7
0.6
Note
Unused terminals are not assembled in the package
•
Revision: 01-Jul-15
Document Number: 95175
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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