VS-50WQ10FNPBF [VISHAY]
DIODE 100 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, SIMILAR TO TO-252AA, DPAK-3, Rectifier Diode;
| 型号： | VS-50WQ10FNPBF |
| 厂家： | 
VISHAY |
| 描述： | DIODE 100 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, SIMILAR TO TO-252AA, DPAK-3, Rectifier Diode 高功率电源 二极管 |
| 文件： | 总6页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-50WQ10FNPbF
Vishay Semiconductors
www.vishay.com
Schottky Rectifier, 5.5 A
FEATURES
Base
cathode
• Popular D-PAK outline
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
4, 2
• Guard ring for enhanced ruggedness and long term
reliability
1
3
D-PAK (TO-252AA)
Anode
Anode
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
D-PAK (TO-252AA)
5.5 A
DESCRIPTION
IF(AV)
The VS-50WQ10FNPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and small foot prints on PC board. Typical applications
are in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
VR
100 V
VF at IF
IRM
See Electrical table
4 mA at 125 °C
150 °C
TJ max.
Diode variation
EAS
Single die
6 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
5.5
UNITS
Rectangular waveform
A
V
100
tp = 5 μs sine
5 Apk, TJ = 125 °C
Range
330
A
VF
0.63
V
TJ
- 40 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-50WQ10FNPbF
UNITS
Maximum DC reverse voltage
VR
100
V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TC = 135 °C, rectangular waveform
VALUES
UNITS
Maximum average forward current
See fig. 5
IF(AV)
5.5
A
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
330
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Following any rated load
condition and with rated
IFSM
VRRM applied
110
6.0
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TJ = 25 °C, IAS = 0.5 A, L = 40 mH
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.5
Revision: 29-May-13
Document Number: 94235
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-50WQ10FNPbF
Vishay Semiconductors
www.vishay.com
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
TJ = 25 °C
VALUES
0.77
0.91
0.63
0.74
1
UNITS
5 A
10 A
Maximum forward voltage drop
See fig. 1
(1)
VFM
V
5 A
TJ = 125 °C
10 A
TJ = 25 °C
TJ = 125 °C
Maximum reverse leakage current
See fig. 2
(1)
IRM
VR = Rated VR
mA
4
Threshold voltage
VF(TO)
rt
0.47
21.46
183
V
TJ =TJ maximum
Forward slope resistance
Typical junction capacitance
Typical series inductance
m
pF
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
LS
5.0
nH
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ (1), TStg
- 40 to 150
°C
Maximum thermal resistance,
junction to case
DC operation
See fig. 4
RthJC
3.0
°C/W
0.3
g
Approximate weight
Marking device
0.01
oz.
Case style D-PAK (similar to TO-252AA)
50WQ10FN
Note
dPtot
1
(1)
------------- < -------------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
Revision: 29-May-13
Document Number: 94235
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-50WQ10FNPbF
Vishay Semiconductors
www.vishay.com
1000
100
10
100
10
TJ = 150 °C
1
TJ = 125 °C
TJ = 100 °C
0.1
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
TJ = 75 °C
TJ = 50 °C
0.01
0.001
0.0001
TJ = 25 °C
1
0
10 20 30 40 50 60 70 80 90 100
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VR - Reverse Voltage (V)
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
TJ = 25 °C
100
10
0
20
40
60
80
100
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
t1
t2
D = 0.75
0.1
D = 0.50
Notes:
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 29-May-13
Document Number: 94235
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-50WQ10FNPbF
Vishay Semiconductors
www.vishay.com
150
145
140
135
130
125
120
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
RMS limit
Square wave (D = 0.50)
80 % rated VR applied
DC
See note (1)
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 29-May-13
Document Number: 94235
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-50WQ10FNPbF
Vishay Semiconductors
www.vishay.com
ORDERING INFORMATION TABLE
Device code
VS-
50
W
Q
10
FN TRL PbF
1
2
3
4
5
6
7
8
-
-
-
Vishay Semiconductors product
Current rating (5.5 A)
Package identifier:
1
2
3
W = D-PAK
4
5
6
7
-
-
-
-
Schottky “Q” series
Voltage rating (10 = 100 V)
FN = TO-252AA (D-PAK)
None = Tube (50 pieces)
TR = Tape and reel
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
PbF = Lead (Pb)-free
-
8
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95016
www.vishay.com/doc?95059
www.vishay.com/doc?95033
www.vishay.com/doc?95549
Part marking information
Packaging information
SPICE model
Revision: 29-May-13
Document Number: 94235
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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