VS-60EPU02 [VISHAY]
Rectifier Diode, 1 Phase, 2 Element, 60A, Silicon, MODIFIED TO-247AC, 2 PIN;
| 型号： | VS-60EPU02 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 60A, Silicon, MODIFIED TO-247AC, 2 PIN 超快软恢复二极管 快速软恢复二极管 局域网 |
| 文件： | 总7页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-60EPU02PbF, VS-60APU02PbF
Vishay Semiconductors
Ultrafast Soft Recovery Diode,
60 A FRED Pt®
FEATURES
• Ultrafast recovery time
• 175 °C maximum junction temperature
• Output rectification
TO-247AC modified
TO-247AC
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
Base
common
cathode
2
Base
common
cathode
2
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
3
1
Anode
1
Anode
3
Anode
Cathode
VS-60EPU02PbF
VS-60APU02PbF
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
PRODUCT SUMMARY
Package
TO-247AC, TO-247AC modified
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
IF(AV)
60 A
200 V
VR
VF at IF
1.08 V
trr (typ.)
TJ max.
Diode variation
See table
175 °C
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VR
TEST CONDITIONS
VALUES
200
UNITS
Cathode to anode voltage
V
Continuous forward current
IF(AV)
TC = 127 °C
60
Single pulse forward current
IFSM
TC = 25 °C
800
A
Maximum repetitive forward current
Operating junction and storage temperatures
IFRM
Square wave, 20 kHz
120
TJ, TStg
- 55 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
IF = 60 A
200
-
-
V
-
-
-
-
-
-
0.98
0.81
-
1.08
0.88
50
2
Forward voltage
VF
IR
IF = 60 A, TJ = 175 °C
VR = VR rated
μA
mA
pF
Reverse leakage current
TJ = 150 °C, VR = VR rated
VR = 200 V
-
Junction capacitance
Series inductance
CT
LS
87
8.0
-
Measured lead to lead 5 mm from package body
-
nH
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94021
Revision: 29-Sep-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VS-60EPU02PbF, VS-60APU02PbF
Ultrafast Soft Recovery Diode,
Vishay Semiconductors
60 A FRED Pt®
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
-
35
-
Reverse recovery time
trr
28
50
4
ns
TJ = 125 °C
-
IF = 60 A
dIF/dt = 200 A/μs
VR = 160 V
TJ = 25 °C
-
Peak recovery current
IRRM
A
TJ = 125 °C
8
-
TJ = 25 °C
59
220
-
Reverse recovery charge
Qrr
nC
TJ = 125 °C
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Thermal resistance,
junction to case
RthJC
-
-
0.70
K/W
Thermal resistance,
case to heatsink
Mounting surface, flat, smooth
and greased
RthCS
-
0.2
-
-
-
-
5.5
0.2
-
-
-
g
Weight
oz.
Mounting torque
Marking device
1.2
N m
Case style TO-247AC modified
Case style TO-247AC
60EPU02
60APU02
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94021
Revision: 29-Sep-10
VS-60EPU02PbF, VS-60APU02PbF
Ultrafast Soft Recovery Diode,
Vishay Semiconductors
60 A FRED Pt®
1000
100
10
1000
100
10
TJ = 175 °C
TJ = 125 °C
1
TJ = 175 °C
TJ = 150 °C
TJ = 25 °C
0.1
0.01
TJ = 25 °C
1
0.001
0
50
100
150
200
0
0.5
1
1.5
2
2.5
VR - Reverse Voltage (V)
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10 000
1000
100
10
TJ = 25 °C
0
10
100
1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
PDM
0.1
t1
D = 0.50
D = 0.20
D = 0.10
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
D = 0.05
D = 0.02
D = 0.01
.
Single pulse
(thermal resistance)
.
0.01
0.00001
0.0001
0.001
0.01
0.1 1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 94021
Revision: 29-Sep-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VS-60EPU02PbF, VS-60APU02PbF
Ultrafast Soft Recovery Diode,
Vishay Semiconductors
60 A FRED Pt®
180
170
160
70
60
50
40
30
20
10
0
IF = 90 A
IF = 60 A
IF = 30 A
DC
150
140
Square wave (D = 0.50)
130
80 % rated VR applied
120
VR = 160 V
TJ = 125 °C
TJ = 25 °C
110
See note (1)
100
0
20
40
60
80
100
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
100
800
VR = 160 V
TJ = 125 °C
TJ = 25 °C
RMS limit
700
600
500
400
300
200
100
0
80
60
40
20
0
IF = 30 A
IF = 60 A
IF = 90 A
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
0
20
40
60
80
100
100
1000
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
dIF/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94021
Revision: 29-Sep-10
VS-60EPU02PbF, VS-60APU02PbF
Ultrafast Soft Recovery Diode,
Vishay Semiconductors
60 A FRED Pt®
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94021
Revision: 29-Sep-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
VS-60EPU02PbF, VS-60APU02PbF
Ultrafast Soft Recovery Diode,
Vishay Semiconductors
60 A FRED Pt®
ORDERING INFORMATION TABLE
Device code
VS-
60
E
P
U
02 PbF
1
2
3
4
5
6
7
1
-
-
-
Vishay Semiconductors product
Current rating (60 = 60 A)
Circuit configuration:
E = Single diode
2
3
A = Single diode, 3 pins
Package:
4
5
-
-
P = TO-247AC (modified)
Type of silicon:
U = Ultrafast recovery
Voltage rating (02 = 200 V)
None = Standard production
PbF = Lead (Pb)-free
6
7
-
-
LINKS TO RELATED DOCUMENTS
TO-247AC modified
TO-247AC
www.vishay.com/doc?95253
www.vishay.com/doc?95223
www.vishay.com/doc?95255
www.vishay.com/doc?95226
www.vishay.com/doc?95416
Dimensions
TO-247AC modified
TO-247AC
Part marking information
SPICE model
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94021
Revision: 29-Sep-10
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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