VS-65APS08L-M3 [VISHAY]
High Voltage Input Rectifier Diode, 65 A;
| 型号： | VS-65APS08L-M3 |
| 厂家： | 
VISHAY |
| 描述： | High Voltage Input Rectifier Diode, 65 A |
| 文件： | 总7页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-65EPS..L-M3, VS-65APS..L-M3
www.vishay.com
Vishay Semiconductors
High Voltage Input Rectifier Diode, 65 A
FEATURES
• Very low forward voltage drop
• Glass passivated pellet chip junction
• Designed and qualified according to
JEDEC® - JESD 47
2
1
1
• Flexible solution for reliable AC power
rectification
2
3
3
TO-247AD 3L
Base cathode
2
TO-247AD 2L
• High surge, low VF rugged blocking diode for DC charging
stations
• AEC-Q101 qualified P/N available (VS-65EPS12LHM3,
VS-65APS12LHM3)
Base cathode
2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1
Cathode
3
1
3
APPLICATIONS
Anode
Anode
Anode
• On-board and off-board EV / HEV battery chargers
• Renewable energy inverters
VS-65EPS..L-M3
VS-65APS..L-M3
• Input rectification for single and three phase bridge
configurations
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
PRIMARY CHARACTERISTICS
IF(AV)
65 A
VR
VF at IF
800 V, 1200 V
1.12 V
DESCRIPTION
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
These devices are intended for use in main rectification
(single or three phase bridge).
IFSM
1000 A
150 °C
TJ max.
Package
TO-247AD 2L, TO-247AD 3L
Single
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
65
UNITS
IF(AV)
VRRM
IFSM
VF
Sinusoidal waveform
A
V
800, 1200
1000
A
30 A, TJ = 25 °C
1.0
V
TJ
-40 to +150
°C
VOLTAGE RATINGS
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
IRRM
AT 150 °C
mA
PART NUMBER
PEAK REVERSE VOLTAGE
V
VS-65EPS08L-M3
VS-65APS08L-M3
VS-65EPS12L-M3
VS-65APS12L-M3
800
800
900
900
1.3
1.3
1200
1200
1300
1300
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
IF(AV)
TC = 121 °C, 180° conduction half sine wave
65
840
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
A
Maximum peak one cycle
non-repetitive surge current
IFSM
1000
3530
5000
50 000
Maximum I2t for fusing
I2t
A2s
Maximum I2t for fusing
I2t
A2s
Revision: 06-Jul-2018
Document Number: 95998
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-65EPS..L-M3, VS-65APS..L-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
VFM
TEST CONDITIONS
65 A, TJ = 25 °C
VALUES
1.12
3.98
0.74
0.1
UNITS
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
V
m
V
rt
TJ = 150 °C
VF(TO)
TJ = 25 °C
Maximum reverse leakage current
IRM
VR = rated VRRM
mA
TJ = 150 °C
1.3
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TJ, TStg
RthJC
TEST CONDITIONS
DC operation
VALUES
-40 to +150
0.25
UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, junction to ambient
Typical thermal resistance, case to heatsink
°C
RthJA
40
°C/W
RthCS
Mounting surface, smooth, and greased
0.25
6
g
Approximate weight
0.21
oz.
minimum
6 (5)
kgf · cm
(lbf · in)
Mounting torque
maximum
12 (10)
Case style TO-247AD 2L
Case style TO-247AD 3L
Case style TO-247AD 2L
Case style TO-247AD 3L
65EPS08L
65APS08L
65EPS12L
65APS12L
Marking device
150
150
RthJC (DC) = 0.25 °C/W
RthJC (DC) = 0.25 °C/W
140
130
120
110
100
90
140
Ø
ConductiØon angle
Conduction angle
130
120
110
DC
120°
60
120°
60°
40
100
60°
180°
80
90°
30°
30°
180°
60
90°
90
80
0
20
100
120
0
10
20
30
40
50
70
Average On-State Current (A)
Fig. 1 - Current Rating Characteristics
Average On-State Current (A)
Fig. 2 - Current Rating Characteristics
Revision: 06-Jul-2018
Document Number: 95998
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-65EPS..L-M3, VS-65APS..L-M3
www.vishay.com
Vishay Semiconductors
100
90
80
70
60
50
40
30
20
10
0
900
180°
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
120°
90°
60°
30°
800
700
600
500
400
300
200
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
RMS limit
Ø
Conduction angle
TJ = 150 °C
20 30
1
10
100
0
10
40
50
60
70
Number of Equal Amplitude Half
Cycle Current Pulse (N)
Average On-State Current (A)
Fig. 3 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
140
120
100
80
1100
180°
120°
90°
60°
30°
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
1000
900
800
700
No voltage reapplied
Rated VRRM reapplied
DC
RMS limit
600
500
400
300
200
100
60
Ø
40
Conduction angle
20
TJ = 150 °C
0
10
0
20
40
60
80
100
120
0.01
0.1
1.0
Average On-state Current (A)
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 4 - Forward Power Loss Characteristics
1000
100
10
1
TJ = 25 °C
TJ = 150 °C
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Revision: 06-Jul-2018
Document Number: 95998
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-65EPS..L-M3, VS-65APS..L-M3
www.vishay.com
Vishay Semiconductors
1
0.25
0.33
0.17
0.5
Steady state value
(DC operation)
0.1
0.08
0.01
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
65
E
P
S
12
L
-M3
1
2
3
4
5
6
7
8
1
-
-
-
Vishay Semiconductors product
Current rating (65 = 65 A)
Circuit configuration:
2
3
E = single, 2 pins
A = single, 3 pins
4
5
-
-
Package:
P = TO-247AD
Type of silicon:
S = standard recovery rectifier
08 = 800 V
6
7
8
-
Voltage code x 100 = VRRM
L = long leads
12 = 1200 V
-
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-65EPS08L-M3
VS-65APS08L-M3
VS-65EPS12L-M3
VS-65APS12L-M3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
25
25
25
25
500
500
500
500
LINKS TO RELATED DOCUMENTS
TO-247AD 2L
www.vishay.com/doc?95536
Dimensions
TO-247AD 3L
www.vishay.com/doc?95626
www.vishay.com/doc?95648
www.vishay.com/doc?95007
TO-247AD 2L
Part marking information
TO-247AD 3L
Revision: 06-Jul-2018
Document Number: 95998
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
TO-247AD 2L
DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
F P
(Datum B)
F P1
B
A2
A
S
M
M
Ø K D B
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
4
D
1, 2
3
Thermal pad
(5) L1
C
(4)
E1
L
See view B
A
M
M
0.01 D B
View A - A
C
2 x b2
2 x b
2 x e
A1
M
M
0.10 C A
(b1, b3)
Plating
Base metal
D D
(c)
c1
C
C
(b, b2)
(4)
Section C - C, D - D
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.50
0.99
0.99
1.65
1.65
0.38
0.38
19.71
13.08
0.51
MAX.
5.31
2.59
2.49
1.40
1.35
2.39
2.34
0.89
0.84
20.70
-
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.092
0.035
0.033
0.815
-
MIN.
15.29
13.46
MAX.
MIN.
MAX.
0.625
-
A
A1
A2
b
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.015
0.015
0.776
0.515
0.020
E
E1
e
15.87
-
0.602
0.53
3
5.46 BSC
0.254
20.32
0.215 BSC
0.010
0.800
Ø K
L
b1
b2
b3
c
19.81
3.71
3.56
-
0.780
0.146
0.14
-
L1
Ø P
Ø P1
Q
4.29
3.66
6.98
5.69
5.49
0.169
0.144
0.275
0.224
0.216
c1
D
5.31
4.52
0.209
0.178
3
4
R
D1
D2
S
5.51 BSC
0.217 BSC
1.35
0.053
Notes
(1)
(2)
(3)
(4)
(5)
(6)
Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
(7)
Revision: 28-May-2018
Document Number: 95536
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
TO-247AD 3L
DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
Φ P
(Datum B)
B
A2
A
S
M
M
Ø K D B
Φ P1
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
4
D
1
2
3
Thermal pad
(5) L1
C
(4)
E1
L
A
M
M
0.01 D B
View A - A
See view B
2 x b2
3 x b
C
2 x e
b4
A1
M
M
0.10 C A
(b1, b3, b5)
Plating
Base metal
D D E
E
(c)
c1
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.50
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
19.71
13.08
MAX.
5.31
2.59
2.49
1.40
1.35
2.39
2.34
3.43
3.38
0.89
0.84
20.70
-
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.092
0.135
0.133
0.035
0.033
0.815
-
MIN.
0.51
MAX.
1.30
15.87
-
MIN.
0.020
0.602
0.53
MAX.
0.051
0.625
-
A
A1
A2
b
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
D2
E
15.29
13.46
3
E1
e
5.46 BSC
0.254
20.32
0.215 BSC
0.010
0.800
b1
b2
b3
b4
b5
c
Ø K
L
19.81
3.71
3.56
-
0.780
0.146
0.14
-
L1
Ø P
Ø P1
Q
4.29
3.66
6.98
5.69
5.49
0.169
0.144
0.275
0.224
0.216
5.31
4.52
0.209
0.178
c1
D
R
3
4
S
5.51 BSC
0.217 BSC
D1
Notes
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
Revision: 06-Mar-2020
Document Number: 95626
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 91000
1
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