VS-6F100 [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 6A, 1000V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN;
| 型号： | VS-6F100 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 6A, 1000V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN 二极管 |
| 文件： | 总6页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-6F(R) Series
Vishay Semiconductors
www.vishay.com
Standard Recovery Diodes
(Stud Version), 6 A
FEATURES
• High surge current capability
• Avalanche types available
• Stud cathode and stud anode version
• Wide current range
• Types up to 1200 V VRRM
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DO-203AA (DO-4)
TYPICAL APPLICATIONS
• Converters
PRODUCT SUMMARY
• Power supplies
IF(AV)
6 A
• Machine tool controls
• Battery charges
Package
DO-203AA (DO-4)
Single diode
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
6
UNITS
A
°C
A
IF(AV)
TC
160
IF(RMS)
9.5
50 Hz
60 Hz
50 Hz
60 Hz
Range
159
IFSM
A
167
134
I2t
A2s
141
VRRM
TJ
100 to 1200
-65 to 175
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM
VRSM, MAXIMUM
V
R(BR), MINIMUM
IRRM MAXIMUM
AT TJ = 175 °C
mA
VOLTAGE
CODE
REPETITIVE PEAK
REVERSE VOLTAGE
V
NON-REPETITIVE PEAK
TYPE NUMBER
AVALANCHE VOLTAGE
REVERSE VOLTAGE
V
V (1)
10
20
100
200
150
275
-
-
40
400
500
500
750
950
1150
1350
VS-6F(R)
60
600
725
12
80
800
950
100
120
1000
1200
1200
1400
Note
(1)
Avalanche version only available from VRRM 400 V to 1200 V
Revision: 28-Jan-14
Document Number: 93519
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-6F(R) Series
Vishay Semiconductors
www.vishay.com
FORWARD CONDUCTION
PARAMETER
SYMBOL
IF(AV)
TEST CONDITIONS
VALUES
6
UNITS
A
Maximum average forward current
at case temperature
180° conduction, half sine wave
160
9.5
°C
Maximum RMS forward current
IF(RMS)
A
(1)
Maximum non-repetitive peak reverse power
PR
10 μs square pulse, TJ = TJ maximum
4
K/W
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
159
167
134
141
127
116
90
No voltage
reapplied
Maximum peak, one cycle forward,
non-repetitive surge current
IFSM
A
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ =
TJ maximum
No voltage
reapplied
Maximum I2t for fusing
I2t
A2s
100 % VRRM
reapplied
82
Maximum I2t for fusing
I2t
VF(TO)1
VF(TO)2
rf1
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
(I > x IF(AV)), TJ = TJ maximum
1270
0.63
0.86
15.7
5.6
A2s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum forward voltage drop
V
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
(I > x IF(AV)), TJ = TJ maximum
m
rf2
VFM
Ipk = 19 A, TJ = 25 °C, tp = 400 μs rectangular wave
1.10
V
Note
(1)
Available only for avalanche version, all other parameters the same as 6F
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction
temperature range
TJ
-65 to 175
°C
Maximum storage
temperature range
TStg
RthJC
RthCS
-65 to 200
2.5
Maximum thermal resistance,
junction to case
DC operation
K/W
Maximum thermal resistance,
case to heatsink
Mounting surface, smooth, flat and greased
0.5
Lubricated threads
(Not lubricated threads)
1.2
(1.5)
N · m
(lbf · in)
Mounting torque, 10 %
7
g
Approximate weight
Case style
0.25
oz.
See dimensions - link at the end of datasheet
DO-203AA (DO-4)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
120°
90°
0.34
0.44
0.57
0.85
1.37
0.29
0.48
0.63
0.88
1.39
TJ = TJ maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 28-Jan-14
Document Number: 93519
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-6F(R) Series
Vishay Semiconductors
www.vishay.com
175
170
165
160
155
175
170
165
160
155
6F(R) Series
R
6F(R) Series
R
(DC) = 2.5 K/W
(DC) = 2.5 K/W
thJC
thJC
Conduction Per iod
Conduction Angle
90°
90°
60°
4
60°
4
120°
180°
120°
30°
180°
30°
DC
0
1
2
3
5
6
7
0
2
6
8
10
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
6
R
h
180°
120°
90°
60°
30°
1
t
5
S
K
/
A
W
=
2
3
0
K
5
4
3
2
1
0
0
K
/
W
/
W
-
D
e
l
t
a
4
0
R
K
/
W
5
0
K
/
W
RMS Limit
Conduction Angle
6F(R) Series
T = 175°C
J
0
1
2
3
4
5
6
25
50
75
100
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
8
7
6
5
4
3
2
1
0
R
h
t
DC
180°
120°
90°
60°
30°
S
A
=
1
5
K
/
W
-
D
e
l
t
a
R
4
0
K/
W
RMS Limit
5
0
K/
Conduction Period
W
6F(R) Series
T = 175°C
J
0
2
4
6
8
10
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
25
50
75
100
Average Forward Current (A)
Revision: 28-Jan-14
Document Number: 93519
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-6F(R) Series
Vishay Semiconductors
www.vishay.com
1000
100
10
150
140
130
120
110
100
90
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
Initial T = 175°C
RRM
6F(R) Series
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
T = 25°C
J
80
70
T = 175°C
J
60
6F(R) Series
50
1
40
0
0.5
1
1.5
2
2.5
1
10
100
NumberOf Equal Amplitude Half CycleCurrent Pulses (N)
Instantaneous Forward Voltage (V)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
160
10
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T = 175°C
Steady State Value
150
R
= 2.5 K/W
thJC
(DCOperation)
140
130
120
110
100
90
J
No Voltage Reapplied
Rated V
Reapplied
RRM
1
80
70
60
50
40
6F(R) Series
1
6F(R) Series
30
0.01
0.1
0.001
0.1
Pulse Train Duration (s)
1
0.01
0.1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
ORDERING INFORMATION TABLE
Device code
VS-
6
F
R
120
M
1
2
3
4
5
6
1
-
-
-
-
Vishay Semiconductors product
Current rating: Code = IF(AV)
F = Standard device
2
3
4
None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
-
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
5
6
None = Stud base DO-203AA (DO-4) 10-32UNF-2A
M = Stud base DO-203AA (DO-4) M5 x 0.8
(not available for avalanche diode)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95311
Document Number: 93519
Revision: 28-Jan-14
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
DO-203AA (DO-4)
DIMENSIONS in millimeters (inches)
0.8 0.1
(0.03 0.004)
3.30 (0.13)
4.00 (0.16)
2+ 0.3
0
(0.08 + 0.01
)
0
5.50 (0.22) MIN.
R 0.40
R (0.02)
Ø 1.80 0.20
(Ø 0.07 0.01)
20.30 (0.80) MAX.
Ø 6.8 (0.27)
10.20 (0.40)
MAX.
3.50 (0.14)
11.50 (0.45)
10.70 (0.42)
10/32" UNF-2A
For metric devices: M5 x 0.8
11 (0.43)
Document Number: 95311
Revision: 30-Jun-08
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
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Revision: 02-Oct-12
Document Number: 91000
1
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