VS-87HF60 [VISHAY]
DIODE GEN PURP 600V 85A DO203AB;
| 型号： | VS-87HF60 |
| 厂家： | 
VISHAY |
| 描述： | DIODE GEN PURP 600V 85A DO203AB |
| 文件： | 总10页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-85HF(R), VS-86HF(R), VS-87HF(R), VS-88HF(R) Series
www.vishay.com
Vishay Semiconductors
Standard Recovery Diodes,
(Stud Version), 85 A
FEATURES
• High surge current capability
• Stud cathode and stud anode version
• Leaded version available
• Types up to 1600 V VRRM
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DO-5 (DO-203AB)
TYPICAL APPLICATIONS
• Battery chargers
• Converters
PRIMARY CHARACTERISTICS
IF(AV)
85 A
• Power supplies
• Machine tool controls
• Welding
Package
DO-5 (DO-203AB)
Single
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
85HF(R)
PARAMETER
TEST CONDITIONS
UNITS
10 to 120
140 to 160
85
140
85
110
A
°C
A
IF(AV)
IF(RMS)
IFSM
TC
133
133
50 Hz
60 Hz
50 Hz
60 Hz
Range
1700
1700
A
1800
1800
14 500
13 500
100 to 1200
-65 to +180
14 500
13 500
1400 to 1600
-65 to +150
I2t
A2s
VRRM
TJ
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VOLTAGE
CODE
TYPE NUMBER
PEAK REVERSE VOLTAGE
V
10
20
100
200
200
300
40
400
500
VS-85HF(R)
VS-86HF(R)
VS-87HF(R)
VS-88HF(R)
60
600
700
9
80
800
900
100
120
140
160
1000
1200
1400
1600
1100
1300
1500
1700
4.5
Revision: 27-Nov-2018
Document Number: 95802
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-85HF(R), VS-86HF(R), VS-87HF(R), VS-88HF(R) Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
85HF(R)
10 to 120 140/160
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
85
A
°C
A
Maximum average forward current
IF(AV)
180° conduction, half sine wave
at case temperature
140
110
Maximum RMS forward current
IF(RMS)
133
1700
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
1800
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
A
1450
100 % VRRM
reapplied
1500
Sinusoidal half wave,
initial TJ = TJ maximum
14 500
13 500
10 500
9400
No voltage
reapplied
Maximum I2t for fusing
I2t
A2s
100 % VRRM
reapplied
Maximum I2t for fusing
I2t
t = 0.1 ms to 10 ms, no voltage reapplied
16 000
A2s
Value of threshold voltage
0.68
0.69
1.62
1.75
(up to 1200 V)
VF(TO)
TJ = TJ maximum
V
Value of threshold voltage
(for 1400 V, 1600 V)
Value of forward slope resistance
(up to 1200 V)
rf
TJ = TJ maximum
mW
V
Value of forward slope resistance
(for 1400 V, 1600 V)
Maximum forward voltage drop
VFM
Ipk = 267 A, TJ = 25 °C, tp = 400 μs rectangular wave
1.2
1.4
THERMAL AND MECHANICAL SPECIFICATIONS
85HF(R)
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
10 to 20
140 to 160
Maximum junction operating and
TJ, TStg
RthJC
-65 to +180 -65 to +150
°C
storage temperature range
Maximum thermal resistance,
junction to case
DC operation
0.35
0.25
K/W
g
Maximum thermal resistance,
case to heatsink
Maximum shock (1)
Maximum constant vibration (1)
Maximum constant acceleration (1)
RthCS
Mounting surface, smooth, flat and greased
1500
20
50 Hz
Stud outwards
5000
Not lubricated thread, tighting on nut
Lubricated thread, tighting on nut
Not lubricated thread, tighting on hexagon
Lubricated thread, tighting on hexagon
3.4 (30)
2.3 (20)
4.2 (37)
3.2 (28)
17
Maximum allowable mounting torque
+ 0 %, - 10 %
N · m
(lbf · in)
g
Approximate weight
Case style
Unleaded device
0.6
oz.
See dimensions - link at the end of datasheet
DO-5 (DO-203AB)
Notes
(1)
(2)
(3)
Available only for 88HF
Recommended for pass-through holes
Recommended for holed threaded heatsinks
Revision: 27-Nov-2018
Document Number: 95802
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-85HF(R), VS-86HF(R), VS-87HF(R), VS-88HF(R) Series
www.vishay.com
Vishay Semiconductors
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
120°
90°
0.10
0.11
0.13
0.17
0.26
0.08
0.11
0.13
0.17
0.26
TJ = TJ maximum
K/W
60°
30°
Note
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
•
180
170
160
150
140
130
150
140
130
120
110
100
85HF(R) Series 100 V to 1200 V
85HF(R) Series (1400 V to 1600 V)
RthJC (DC) = 0.35 K/W
RthJC (DC) = 0.35 K/W
Conduction Angle
Conduction Angle
30°
30°
60°
60°
90°
90°
120°
180°
120°
180°a
0
10 20 30 40 50 60 70 80 90 100
0
10 20 30 40 50 60 70 80 90 100
IF(AV) - Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
180
170
160
150
140
130
150
140
130
120
110
100
85HF(R) Series 100 V to 1200 V
85HF(R) Series (1400 V to 1600 V)
RthJC (DC) = 0.35 K/W
RthJC (DC) = 0.35 K/W
Conduction Period
Conduction Period
30°
30°
60°
90°
60°
90°
120°
120°
DC
180°
100
180°
DC
0
20
40
60
80
100
120
140
0
20
40
60
80
120 140
IF(AV) - Average Forward Current (A)
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Revision: 27-Nov-2018
Document Number: 95802
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-85HF(R), VS-86HF(R), VS-87HF(R), VS-88HF(R) Series
www.vishay.com
Vishay Semiconductors
90
1 K/W
180°
120°
90°
60°
30°
0.7 K/W
Rth
1.5 K/W
2 K/W
S
80
70
60
50
40
30
20
10
0
A = 0.5 K/W - Delta R
RMS Limit
3 K/W
5 K/W
Conduction Angle
10 K/W
85HF(R) Series 100 V to 1200 V
Tj = 180˚C
20 40 60 80 100 120 140 160 180
0
10 20 30 40 50 60 70 80 90
IF(AV) - Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)
Fig. 5 - Forward Power Loss Characteristics
120
100
80
60
40
20
0
DC
180°
120°
90°
60°
30°
0.7 K/W
Rth
1 K/W
S
A = 0.5 K/W - Delta R
1.5 K/W
2 K/W
RMS Limit
3 K/W
Conduction Period
5 K/W
10 K/W
85HF(R) Series 100 V to 1200 V
Tj = 180˚C
0
20
40
60
80
100 120 140
20 40 60 80 100 120 140 160 180
IF(AV) - Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)
Fig. 6 - Forward Power Loss Characteristics
100
90
80
70
60
50
40
30
20
10
0
180°
0.7 K/W
R
th
120°
90°
60°
30°
1 K/W
S
A
= 0.5 K/W - Delta R
1.5 K/W
2 K/W
3 K/W
RMS Limit
Conduction Angle
5 K/W
10 K/W
85HF(R) Series (1400 V, 1600 V)
Tj = 150 ˚C
0
10 20 30 40 50 60 70 80 90
25
50
75
100
125
150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - Forward Power Loss Characteristics
Revision: 27-Nov-2018
Document Number: 95802
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-85HF(R), VS-86HF(R), VS-87HF(R), VS-88HF(R) Series
www.vishay.com
Vishay Semiconductors
1 40
DC
180°
120°
R
1 20
th
S
0.7 K/W A
= 0.5 K/W - Delta R
90°
1 00
80
60°
30°
1 K/W
1.5 K/W
2 K/W
RMS Limit
60
3 K/W
5 K/W
Conduction Period
40
85HF(R) Series
(1400 V, 1600 V)
Tj = 150 ˚C
10 K/W
20
0
0
20
40
60
80
100 120 140
25
50
75
100
125
150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - Forward Power Loss Characteristics
1600
1400
1200
1000
800
10 000
1000
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = Tj Max.
Tj = 25°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Tj = Tj Max.
100
10
85HF(R) Series
up to 1200 V
600
85HF(R) Series
400
0
1
2
Instantaneous Forward Voltage (V)
Fig. 11 - Forward Voltage Drop Characteristics
3
4
5
6
1
10
100
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 9 - Maximum Non-Repetitive Surge Current
1800
1600
1400
1200
1000
800
1000
100
10
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial Tj = Tj Max.
Tj = Tj Max.
No Voltage Reapplied
Rated Vrrm Reapplied
Tj = 25 °C
600
85HF (R) Series
400
85HF(R) Series
1
200
0.01
0.1
1
0
0.5
1
1.5
2
2.5
Pulse Train Duration (s)
Instantaneous Forward Voltage (V)
Fig. 10 - Maximum Non-Repetitive Surge Current
Fig. 12 - Forward Voltage Drop Characteristics
(for 1400 V, 1600 V)
Revision: 27-Nov-2018
Document Number: 95802
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-85HF(R), VS-86HF(R), VS-87HF(R), VS-88HF(R) Series
www.vishay.com
Vishay Semiconductors
10
Steady State Value
RthJC = 0.35 K/W
1
0.1
(DC Operation)
0.01
0.001
85HF(R) Series
0.0001
0.001
0.01
0.1
1
10
t - Square Wave Pulse Duration (s)
Fig. 13 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS- 85
HF
R
160
M
1
2
3
4
5
6
1
2
-
-
Vishay Semiconductors product
85 = standard device
86 = not isolated lead
87 = isolated lead with silicone sleeve
(red = Reverse polarity)
(blue = Normal polarity)
88 = type for rotating application
3
4
-
-
HF = standard diode
None = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)
Voltage code x 10 = VRRM (see Voltage Ratings table)
None = stud base DO-5 (DO-203AB) 1/4" 28UNF-2A
M = stud base DO-5 (DO-203AB) M6 x 1 (not available for 88HF)
M8 = stud base DO-5 (DO-203AB) M8 x 1.25 (not available for 88HF)
5
6
-
-
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95342
Revision: 27-Nov-2018
Document Number: 95802
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
DO-5 (DO-203AB) for 85HF(R), 86HF(R) and 88HF(R)Series
DIMENSIONS FOR 85HF(R) SERIES in millimeters (inches)
Ø 15.1 (0.59)
6.1/7
(0.24/0.27)
4 (0.16)
4 (0.16) MIN.
25.4 (1) MAX.
10.8 (0.42)
11.4 (0.45)
11.1 0.4
(0.44 0.02)
1/4" 28UNF-2A
For metric devices: M8 x 1.25
M6 x 1
1.20 (0.04)
17.35 (0.68)
Revision: 20-Nov-2018
Document Number: 95342
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
DIMENSIONS FOR 86HF(R) SERIES in millimeters (inches)
12.2 (0.48) MAX.
Ø 7 (0.28) MAX.
123 (4.84)
MAX.
134.4 (5.29)
MAX.
Revision: 20-Nov-2018
Document Number: 95342
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
DIMENSIONS 88HF(R) SERIES in millimeters (inches)
Ø 15 (0.59)
7 (0.27)
1/4" 28 UNr - 2A
Revision: 20-Nov-2018
Document Number: 95342
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
Document Number: 91000
1
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