VS-8EWF10STR-M3 [VISHAY]
Surface Mount Fast Soft Recovery Rectifier Diode, 8 A;
| 型号： | VS-8EWF10STR-M3 |
| 厂家： | 
VISHAY |
| 描述： | Surface Mount Fast Soft Recovery Rectifier Diode, 8 A |
| 文件： | 总8页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-8EWF10S-M3, VS-8EWF12S-M3 Soft Recovery Series
www.vishay.com
Vishay Semiconductors
Surface Mount Fast Soft Recovery Rectifier Diode, 8 A
FEATURES
Base
• Glass passivated pellet chip junction
cathode
+
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
2
• Material categorization:
2
for definitions of compliance please see
3
www.vishay.com/doc?99912
1
1
3
TO-252AA (D-PAK)
-
-
Anode
Anode
APPLICATIONS
• Output rectification and freewheeling diode in inverters,
choppers and converters
PRODUCT SUMMARY
• Input rectifications where severe restrictions on
conducted EMI should be met
Package
TO-252AA (D-PAK)
8 A
IF(AV)
VR
1000 V, 1200 V
1.3 V
DESCRIPTION
VF at IF
IFSM
The VS-8EWF..S-M3 fast soft recovery rectifier series has
been optimized for combined short reverse recovery time,
low forward voltage drop and low leakage current.
150 A
trr
80 ns
TJ max.
Diode variation
Snap factor
150 °C
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
Single die
0.6
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
VF
CHARACTERISTICS
VALUES
UNITS
Sinusoidal waveform
8
1000/1200
150
A
V
A
8 A, TJ = 25 °C
1 A, 100 A/μs
Range
1.3
V
trr
80
ns
°C
TJ
-40 to +150
VOLTAGE RATINGS
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
IRRM
AT 150 °C
mA
PART NUMBER
PEAK REVERSE VOLTAGE
V
VS-8EWF10S-M3
VS-8EWF12S-M3
1000
1200
1100
1300
4
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
8
UNITS
Maximum average forward current
IF(AV)
TC = 96 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
125
A
Maximum peak one cycle
non-repetitive surge current
IFSM
150
78
Maximum I2t for fusing
I2t
A2s
110
Maximum I2t for fusing
I2t
1100
A2s
Revision: 16-Jan-17
Document Number: 93377
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8EWF10S-M3, VS-8EWF12S-M3 Soft Recovery Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
8 A, TJ = 25 °C
VALUES
1.3
UNITS
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
VFM
V
m
V
rt
25.6
0.93
0.1
TJ = 150 °C
VF(TO)
TJ = 25 °C
Maximum reverse leakage current
IRM
VR = Rated VRRM
mA
TJ = 150 °C
4
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL TEST CONDITIONS
VALUES
270
4.2
UNITS
ns
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
trr
IFM
IF at 8 Apk
trr
ta tb
Irr
Qrr
S
25 A/μs
TJ = 25 °C
A
t
di
dt
1
μC
Qrr
0.6
Irr
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and
storage temperature range
TJ, TStg
-40 to +150
°C
Maximum thermal resistance,
junction to case
RthJC
DC operation
2.5
50
°C/W
Typical thermal resistance,
junction to ambient (PCB mount)
(1)
RthJA
1
g
Approximate weight
Marking device
0.03
oz.
8EWF10S
8EWF12S
Case style TO-252AA (D-PAK)
Note
(1)
When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
Revision: 16-Jan-17
Document Number: 93377
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8EWF10S-M3, VS-8EWF12S-M3 Soft Recovery Series
www.vishay.com
Vishay Semiconductors
150
140
130
120
110
100
90
18
DC
180°
120°
90°
60°
30°
8EWF.. S Series
RthJC (DC) = 2.5 °C/W
16
14
12
10
8
Ø
Conduction angle
RMS limit
6
Ø
30°
3
Conduction period
80
4
120°
60°
5
8EWF..S Series
TJ = 150 °C
70
2
90°
6
180°
8
60
0
0
1
2
4
7
9
0
2
4
6
8
10
12
14
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
140
130
120
110
100
90
150
140
130
120
110
100
90
At any rated load condition and with
rated Vrrm applied following surge.
Initial Tj = 150 °C
8EWF..S Series
RthJC (DC) = 2.5 °C/W
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Ø
80
Conduction period
70
60
30°
60°
80
50
90°
VS-8EWF..S .. Series
70
120°
40
DC
12
180°
30
60
0
2
4
6
8
10
14
1
10
100
Average Forward Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
12
10
8
170
180°
120°
90°
60°
30°
Maximum non-repetitive surge current
versus pulse train duration.
Initial Tj = Tj max.
150
130
110
90
No voltage reapplied
Rated Vrrm reapplied
RMS limit
6
70
Ø
4
Conduction angle
50
2
8EWF..S Series
TJ = 150 °C
30
VS-8EWF..S .. Series
0.1
10
0.01
0
0
1
2
3
4
5
6
7
8
9
1
10
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 16-Jan-17
Document Number: 93377
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8EWF10S-M3, VS-8EWF12S-M3 Soft Recovery Series
www.vishay.com
Vishay Semiconductors
1000
100
10
2.0
8EWF..S Series
IFM = 10 A
TJ = 25 °C
TJ = 25 °C
TJ = 150 °C
1.6
1.2
0.8
0.4
0
IFM = 8 A
IFM = 5 A
IFM = 2 A
IFM = 1 A
8EWF..S Series
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0
40
80
120
160
200
Instantaneous Forward Voltage (V)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
0.6
0.5
0.4
0.3
0.2
0.1
0
5
8EWF..S Series
TJ = 150 °C
8EWF..S Series
TJ = 25 °C
IFM = 10 A
4
IFM = 10 A
IFM = 8 A
IFM = 5 A
IFM = 8 A
IFM = 5 A
3
2
1
0
IFM = 2 A
IFM = 1 A
IFM = 2 A
IFM = 1 A
0
40
80
120
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
0.8
20
8EWF..S Series
TJ = 25 °C
8EWF..S Series
TJ = 150 °C
IFM = 10 A
IFM = 8 A
IFM = 5 A
16
12
8
IFM = 10 A
IFM = 8 A
0.6
0.4
0.2
0
I
FM = 5 A
IFM = 2 A
IFM = 1 A
IFM = 2 A
IFM = 1 A
4
0
0
40
80
120
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
Revision: 16-Jan-17
Document Number: 93377
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8EWF10S-M3, VS-8EWF12S-M3 Soft Recovery Series
www.vishay.com
Vishay Semiconductors
25
8EWF..S Series
TJ = 150 °C
20
IFM = 10 A
IFM = 8 A
IFM = 5 A
IFM = 2 A
15
IFM = 1 A
10
5
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
10
Steady state value
(DC operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
8EWF..S Series
0.1
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Revision: 16-Jan-17
Document Number: 93377
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8EWF10S-M3, VS-8EWF12S-M3 Soft Recovery Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
8
E
W
F
12
S
TR -M3
1
2
3
4
5
6
7
8
9
1
-
-
-
Vishay Semiconductors product
Current rating (8 = 8 A)
Circuit configuration:
E = single diode
2
3
4
5
-
-
Package:
W = D-PAK
Type of silicon:
F = fast soft recovery rectifier
Voltage code x 100 = VRRM
10 = 1000 V
12 = 1200 V
-
-
-
6
7
8
S = surface mountable
TR = tape and reel
TRR = tape and reel (right oriented)
TRL = tape and reel (left oriented)
Environmental digit:
9
-
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
VS-8EWF10S-M3
75
3000
2000
3000
3000
3000
2000
3000
3000
VS-8EWF10STR-M3
VS-8EWF10STRL-M3
VS-8EWF10STRR-M3
VS-8EWF12S-M3
2000
3000
3000
75
13" diameter reel
13" diameter reel
Antistatic plastic tubes
13" diameter reel
VS-8EWF12STR-M3
VS-8EWF12STRL-M3
VS-8EWF12STRR-M3
2000
3000
3000
13" diameter reel
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95627
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?95176
www.vishay.com/doc?95033
www.vishay.com/doc?95552
Revision: 16-Jan-17
Document Number: 93377
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
D-PAK (TO-252AA) “M”
DIMENSIONS in millimeters and inches
(5)
(3)
A
Pad layout
C
A
E
0.265
MIN.
M
C A B
b3
0.010
c2
(6.74)
A
H
E1
L3 (3)
Ø 1
4
4
Ø 2
0.245
MIN.
B
Seating
plane
D1
(6.23)
D (5)
0.488 (12.40)
0.409 (10.40)
L4
M
1
3
3
2
1
2
0.089
MIN.
(2.28)
Detail “C”
(2) L5
A
0.06
MIN.
b
0.010
c
(1.524)
b2
C A B
e
2 x
0.093 (2.38)
0.085 (2.18)
Detail “C”
(L1)
Rotated 90 °CW
Scale: 20:1
H
C
Lead tip
(7)
C
Gauge
plane
Seating
plane
C
L2
A1
Ø
L
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
MIN. MAX.
0.090 BSC
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
2.18
-
MAX.
2.39
0.13
0.89
1.14
5.46
0.61
0.89
6.22
-
MAX.
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
-
MIN.
MAX.
A
A1
b
0.086
-
e
H
2.29 BSC
9.40
1.40
10.41
1.78
0.370
0.055
0.410
0.070
0.64
0.76
4.95
0.46
0.46
5.97
5.21
6.35
4.32
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.250
0.170
L
b2
b3
c
L1
L2
L3
L4
L5
Ø
2.74 BSC
0.51 BSC
0.108 REF.
0.020 BSC
3
0.89
1.27
1.02
1.52
10°
0.035
0.050
0.040
0.060
10°
3
2
c2
D
-
-
0.045
0°
5
3
5
3
1.14
0°
D1
E
6.73
-
0.265
-
Ø1
Ø2
0°
15°
0°
15°
E1
25°
35°
25°
35°
Notes
(1)
(2)
(3)
(4)
(5)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Lead dimension uncontrolled in L5
Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
Dimension b1 and c1 applied to base metal only
(6)
(7)
(8)
Datum A and B to be determined at datum plane H
Outline conforms to JEDEC® outline TO-252AA
Revision: 24-Jun-16
Document Number: 95627
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
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