VS-8EWL06FNTRR-M3 [VISHAY]
Ultralow VF Ultrafast Rectifier, 8 A FRED Pt;
| 型号： | VS-8EWL06FNTRR-M3 |
| 厂家： | 
VISHAY |
| 描述： | Ultralow VF Ultrafast Rectifier, 8 A FRED Pt 高帧率高马力 二极管 |
| 文件： | 总7页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-8EWL06FN-M3
Vishay Semiconductors
www.vishay.com
Ultralow VF Ultrafast Rectifier, 8 A FRED Pt®
FEATURES
• Ultrafast recovery time, extremely low VF and
soft recovery
2, 4
• 175 °C maximum operating junction temperature
• For PFC DCM operation
• Low leakage current
1
N/C
3
Anode
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
TO-252AA (D-PAK)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package
TO-252AA (D-PAK)
8 A
IF(AV)
VR
600 V
VF at IF
0.81 V
trr (typ.)
TJ max.
Diode variation
60 ns
175 °C
Single die
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units and DVD AC/DC power supplies.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VRRM
IF(AV)
TEST CONDITIONS
VALUES
UNITS
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
600
V
TC = 158 °C
8
140
IFSM
TJ = 25 °C
A
IFM
TC = 158 °C, f = 20 kHz, d = 50 %
16
TJ, TStg
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
VBR
VR
,
IR = 100 μA
IF = 8 A
600
-
-
blocking voltage
V
-
-
-
-
-
-
0.96
1.05
0.86
5
Forward voltage
VF
IR
IF = 8 A, TJ = 150 °C
0.81
VR = VR rated
-
-
Reverse leakage current
μA
TJ = 150 °C, VR = VR rated
VR = 600 V
100
-
Junction capacitance
Series inductance
CT
LS
8
8
pF
nH
Measured lead to lead 5 mm from package body
-
Revision: 05-Oct-16
Document Number: 93240
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8EWL06FN-M3
Vishay Semiconductors
www.vishay.com
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
-
87
-
60
100
Reverse recovery time
trr
ns
170
250
15
-
-
-
-
-
-
TJ = 125 °C
IF = 8 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
Peak recovery current
IRRM
dIF/dt = 200 A/μs
A
20
VR = 390 V
1.3
2.6
Reverse recovery charge
Qrr
uC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction and storage
temperature range
TJ, TStg
-55
-
175
°C
Thermal resistance,
junction to case per leg
RthJC
-
1.8
2.2
°C/W
0.3
g
Approximate weight
Marking device
0.01
oz.
Case style TO-252AA (D-PAK)
8EWL06FN
100
100
10
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 175 °C
10
1
TJ = 100 °C
TJ = 75 °C
0.1
TJ = 50 °C
0.01
1
TJ = 125 °C
TJ = 25 °C
0.001
TJ = 25 °C
0.0001
0.1
0.4
0
100
200
300
400
500
600
0.6
0.8
1.0
1.2
1.4
1.6
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
VFM - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Revision: 05-Oct-16
Document Number: 93240
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8EWL06FN-M3
Vishay Semiconductors
www.vishay.com
100
10
1
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
D = 0.5
1
D = 02
D = 0.1
D = 0.05
D = 0.02
D = 0.01
0.1
Single Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
180
170
160
150
140
130
120
20
18
16
RMS Limit
DC
14
12
10
8
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
Square wave (D = 0.50)
rated VR applied
6
4
DC
see note (1)
2
0
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Revision: 05-Oct-16
Document Number: 93240
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8EWL06FN-M3
Vishay Semiconductors
www.vishay.com
350
300
250
200
150
100
50
3500
3000
2500
2000
1500
1000
500
8 A, TJ = 125 °C
8 A, TJ = 125 °C
8 A, TJ = 25 °C
8 A, TJ = 25 °C
0
0
100
1000
100
1000
dIFdt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
dIFdt (A/μs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 05-Oct-16
Document Number: 93240
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8EWL06FN-M3
Vishay Semiconductors
www.vishay.com
ORDERING INFORMATION TABLE
Device code
VS-
8
E
W
L
06
FN TRL -M3
1
2
3
4
5
6
7
8
9
1
-
-
-
Vishay Semiconductors product
Current rating (8 = 8 A)
Circuit configuration:
E = Single diode
2
3
-
Package identifier:
4
W = D-PAK
-
-
-
-
L = low VF, fast recovery
Voltage rating (06 = 600 V)
FN = TO-252AA
5
6
7
8
None = tube
TR = tape and reel
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
Environmental digit:
9
-
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tube
13" diameter reel
VS-8EWL06FN-M3
75
3000
2000
3000
3000
VS-8EWL06FNTR-M3
VS-8EWL06FNTRL-M3
VS-8EWL06FNTRR-M3
2000
3000
3000
13" diameter reel
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95627
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?95176
www.vishay.com/doc?95033
www.vishay.com/doc?95373
Revision: 05-Oct-16
Document Number: 93240
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
D-PAK (TO-252AA) “M”
DIMENSIONS in millimeters and inches
(5)
(3)
A
Pad layout
C
A
E
0.265
MIN.
M
C A B
b3
0.010
c2
(6.74)
A
H
E1
L3 (3)
Ø 1
4
4
Ø 2
0.245
MIN.
B
Seating
plane
D1
(6.23)
D (5)
0.488 (12.40)
0.409 (10.40)
L4
M
1
3
3
2
1
2
0.089
MIN.
(2.28)
Detail “C”
(2) L5
A
0.06
MIN.
b
0.010
c
(1.524)
b2
C A B
e
2 x
0.093 (2.38)
0.085 (2.18)
Detail “C”
(L1)
Rotated 90 °CW
Scale: 20:1
H
C
Lead tip
(7)
C
Gauge
plane
Seating
plane
C
L2
A1
Ø
L
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
MIN. MAX.
0.090 BSC
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
2.18
-
MAX.
2.39
0.13
0.89
1.14
5.46
0.61
0.89
6.22
-
MAX.
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
-
MIN.
MAX.
A
A1
b
0.086
-
e
H
2.29 BSC
9.40
1.40
10.41
1.78
0.370
0.055
0.410
0.070
0.64
0.76
4.95
0.46
0.46
5.97
5.21
6.35
4.32
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.250
0.170
L
b2
b3
c
L1
L2
L3
L4
L5
Ø
2.74 BSC
0.51 BSC
0.108 REF.
0.020 BSC
3
0.89
1.27
1.02
1.52
10°
0.035
0.050
0.040
0.060
10°
3
2
c2
D
-
-
0.045
0°
5
3
5
3
1.14
0°
D1
E
6.73
-
0.265
-
Ø1
Ø2
0°
15°
0°
15°
E1
25°
35°
25°
35°
Notes
(1)
(2)
(3)
(4)
(5)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Lead dimension uncontrolled in L5
Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
Dimension b1 and c1 applied to base metal only
(6)
(7)
(8)
Datum A and B to be determined at datum plane H
Outline conforms to JEDEC® outline TO-252AA
Revision: 24-Jun-16
Document Number: 95627
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 13-Jun-16
Document Number: 91000
1
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