VS-90APS12L-M3 [VISHAY]
High Voltage, Input Rectifier Diode, 90 A;
| 型号： | VS-90APS12L-M3 |
| 厂家： | 
VISHAY |
| 描述： | High Voltage, Input Rectifier Diode, 90 A |
| 文件： | 总8页 (文件大小：1029K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-90EPS..L-M3, VS-90APS..L-M3
www.vishay.com
Vishay Semiconductors
High Voltage, Input Rectifier Diode, 90 A
FEATURES
• Very low forward voltage drop
• 150 °C max. operating junction temperature
• Glass passivated pallet chip junction
2
1
1
• Designed and qualified according to
JEDEC®-JESD 47
2
3
3
TO-247AD 3L
TO-247AD 2L
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Base
cathode
Base
cathode
APPLICATIONS
2
• Input rectification for single and three phase bridge
configurations
2
• Off-board EV/HEV battery chargers
• Renewable energy inverters
• Input rectification for single and three phase bridge
configurations
3
1
Cathode
Anode
1
Anode
3
Anode
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
VS-90EPS..L
VS-90APS..L
DESCRIPTION
PRIMARY CHARACTERISTICS
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
IF(AV)
90 A
VR
VF at IF
800 V to 1200 V
These devices are intended for use in main rectification
(single or three phase bridge).
1.20 V
IFSM
1100 A
150 °C
TJ max.
Package
TO-247AD 2L, TO-247AD 3L
Single
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
90
UNITS
Sinusoidal waveform
Range
A
V
800 to 1200
1100
A
VF
90 A, TJ = 25 °C
1.20
V
TJ
-40 to +150
°C
VOLTAGE RATINGS
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
IRRM
AT 150 °C
mA
PART NUMBER
PEAK REVERSE VOLTAGE
V
VS-90EPS08L-M3, VS-90APS08L-M3
VS-90EPS12L-M3, VS-90APS12L-M3
800
900
1.5
1200
1300
Revision: 10-Jul-2018
Document Number: 93396
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-90EPS..L-M3, VS-90APS..L-M3
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
90
UNITS
Maximum average forward current
IF(AV)
TC = 112 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
915
A
Maximum peak one cycle
non-repetitive surge current
IFSM
1100
4185
6050
60 500
Maximum I2t for fusing
I2t
A2s
Maximum I2t for fusing
I2t
A2s
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
VFM
TEST CONDITIONS
VALUES
1.20
3.17
0.73
0.1
UNITS
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
90 A, TJ = 25 °C
V
m
V
rt
TJ = 150 °C
VF(TO)
TJ = 25 °C
Maximum reverse leakage current
IRM
VR = Rated VRRM
mA
TJ = 150 °C
1.5
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
-40 to +150
°C
Maximum thermal resistance,
junction to case
RthJC
RthJA
RthCS
DC operation
0.2
40
Maximum thermal resistance,
junction to ambient
°C/W
Typical thermal resistance,
case to heatsink
Mounting surface, flat, smooth and greased
0.25
6
g
Approximate weight
Mounting torque
Marking device
0.21
oz.
minimum
maximum
6 (5)
12 (10)
kgf · cm
(lbf · in)
Case style TO-247AD 2L
Case style TO-247AD 3L
90EPS08L, 90EPS12L
90APS08L, 90APS12L
Revision: 10-Jul-2018
Document Number: 93396
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-90EPS..L-M3, VS-90APS..L-M3
www.vishay.com
Vishay Semiconductors
150
140
130
120
110
100
90
180
RthJC (DC) = 0.2°C/W
180°
160
140
120
100
80
120°
90°
60°
30°
Ø
Conduction angle
RMS limit
Ø
30°
20
Conduction Angle
60
60°
40
90°
DC
40
120°
180°
20
TJ = 150 °C
0
0
60
80
100
0
20
40
60
80
100 120 140
Average On-State Current (A)
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
1000
900
800
700
600
500
400
300
200
100
150
140
130
120
110
100
90
At any rated load condition and with
rated VRRM applied following surge.
RthJC (DC) = 0.2°C/W
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Ø
Conduction angle
30°
60°
90°
90EPS..L
120°
180°
DC
1
10
100
0
20
40
60
80 100 120 140 160
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
Average On-State Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
140
130
120
110
100
90
80
70
60
50
1200
180°
120°
90°
60°
30°
Maximum non-repetitive surge current
vs. pulse train duration.
Initial TJ = 150 °C
1100
1000
900
800
700
600
500
400
300
200
100
No voltage reapplied
Rated VRRM reapplied
RMS limit
Ø
40
30
20
10
Conduction angle
90EPS..L
TJ = 150°C
0
0.01
0.1
1
10
0
20
40
60
80
100
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Average On-State Current (A)
Fig. 3 - Forward Power Loss Characteristics
Revision: 10-Jul-2018
Document Number: 93396
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-90EPS..L-M3, VS-90APS..L-M3
www.vishay.com
Vishay Semiconductors
1000
100
10
TJ = 25 °C
TJ = 150 °C
1
4.0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
1
0.5
0.1
0.33
0.25
0.17
0.08
Single pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Revision: 10-Jul-2018
Document Number: 93396
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-90EPS..L-M3, VS-90APS..L-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
90
A
P
S
12
L
-M3
6
1
2
3
4
5
7
8
-
-
-
Vishay Semiconductors product
Current rating (90 = 90 A)
1
2
3
Circuit configuration:
E = single diode, 2 pins
A = single diode, 3 pins
-
-
Package:
4
5
P = TO-247AD
Type of silicon:
S = standard recovery rectifier
Voltage ratings
08 = 800 V
12 = 1200 V
-
-
-
6
7
8
L = long leads
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-90EPS08L-M3
VS-90APS08L-M3
VS-90EPS12L-M3
VS-90APS12L-M3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
25
25
25
25
500
500
500
500
LINKS TO RELATED DOCUMENTS
TO-247AD 2L
www.vishay.com/doc?95536
Dimensions
TO-247AD 3L
www.vishay.com/doc?95626
www.vishay.com/doc?95648
www.vishay.com/doc?95007
TO-247AD 2L
Part marking information
TO-247AD 3L
Revision: 10-Jul-2018
Document Number: 93396
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
TO-247AD 2L
DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
F P
(Datum B)
F P1
B
A2
A
S
M
M
Ø K D B
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
4
D
1, 2
3
Thermal pad
(5) L1
C
(4)
E1
L
See view B
A
M
M
0.01 D B
View A - A
C
2 x b2
2 x b
2 x e
A1
M
M
0.10 C A
(b1, b3)
Plating
Base metal
D D
(c)
c1
C
C
(b, b2)
(4)
Section C - C, D - D
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.50
0.99
0.99
1.65
1.65
0.38
0.38
19.71
13.08
0.51
MAX.
5.31
2.59
2.49
1.40
1.35
2.39
2.34
0.89
0.84
20.70
-
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.092
0.035
0.033
0.815
-
MIN.
15.29
13.46
MAX.
MIN.
MAX.
0.625
-
A
A1
A2
b
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.015
0.015
0.776
0.515
0.020
E
E1
e
15.87
-
0.602
0.53
3
5.46 BSC
0.254
20.32
0.215 BSC
0.010
0.800
Ø K
L
b1
b2
b3
c
19.81
3.71
3.56
-
0.780
0.146
0.14
-
L1
Ø P
Ø P1
Q
4.29
3.66
6.98
5.69
5.49
0.169
0.144
0.275
0.224
0.216
c1
D
5.31
4.52
0.209
0.178
3
4
R
D1
D2
S
5.51 BSC
0.217 BSC
1.35
0.053
Notes
(1)
(2)
(3)
(4)
(5)
(6)
Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
(7)
Revision: 28-May-2018
Document Number: 95536
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
TO-247AD 3L
DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
Φ P
(Datum B)
B
A2
A
S
M
M
Ø K D B
Φ P1
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
4
D
1
2
3
Thermal pad
(5) L1
C
(4)
E1
L
A
M
M
0.01 D B
View A - A
See view B
2 x b2
3 x b
C
2 x e
b4
A1
M
M
0.10 C A
(b1, b3, b5)
Plating
Base metal
D D E
E
(c)
c1
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.50
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
19.71
13.08
MAX.
5.31
2.59
2.49
1.40
1.35
2.39
2.34
3.43
3.38
0.89
0.84
20.70
-
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.092
0.135
0.133
0.035
0.033
0.815
-
MIN.
0.51
MAX.
1.30
15.87
-
MIN.
0.020
0.602
0.53
MAX.
0.051
0.625
-
A
A1
A2
b
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
D2
E
15.29
13.46
3
E1
e
5.46 BSC
0.254
20.32
0.215 BSC
0.010
0.800
b1
b2
b3
b4
b5
c
Ø K
L
19.81
3.71
3.56
-
0.780
0.146
0.14
-
L1
Ø P
Ø P1
Q
4.29
3.66
6.98
5.69
5.49
0.169
0.144
0.275
0.224
0.216
5.31
4.52
0.209
0.178
c1
D
R
3
4
S
5.51 BSC
0.217 BSC
D1
Notes
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
Revision: 06-Mar-2020
Document Number: 95626
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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