VS-94MT100KPBF [VISHAY]
Silicon Controlled Rectifier;
| 型号： | VS-94MT100KPBF |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier |
| 文件： | 总10页 (文件大小：1403K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-54-94-104MT..KPbF Series
www.vishay.com
Vishay Semiconductors
Three Phase AC Switch (Power Modules),
50 A to 100 A
FEATURES
• Package fully compatible with the industry
standard INT-A-PAK power modules series
• High thermal conductivity package, electrically
insulated case
• Outstanding number of power encapsulated components
• Excellent power volume ratio
• 4000 VRMS isolating voltage
• UL E78996 approved
MT-K
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
IO
50 A to 100 A
800 V to 1600 V
MT-K
DESCRIPTION
VRRM
A range of extremely compact, encapsulated three phase
AC switches offering efficient and reliable operation. They
are intended for use in general purpose and heavy duty
applications as control motor starter.
Package
Circuit
Three phase AC switch
MAJOR RATINGS AND CHARACTERISTICS
VALUES
54MT.K
VALUES
94MT.K
VALUES
104MT.K
SYMBOL
CHARACTERISTICS
UNITS
50
80
90
80
100
80
A
IO
TC
°C
50 Hz
60 Hz
50 Hz
60 Hz
390
410
770
700
7700
950
1130
1180
6380
5830
63800
IFSM
I2t
A
1000
4525
A2s
4130
I2t
VRRM
TStg
TJ
45250
800 to 1600
-40 to 125
-40 to 125
A2s
V
Range
Range
Range
°C
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RSM, MAXIMUM
VDRM, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
IRRM/IDRM,
V
RRM, MAXIMUM
VOLTAGE
CODE
NON-REPETITIVE PEAK
MAXIMUM
AT TJ = 125 °C
mA
TYPE NUMBER
REPETITIVE PEAK
REVERSE VOLTAGE V
REVERSE VOLTAGE
V
80
800
1000
1200
1400
1600
800
900
1100
1300
1500
1700
900
800
1000
1200
1400
1600
800
100
120
140
160
80
VS-54MT..K
20 (1)
100
120
140
160
1000
1200
1400
1600
1100
1300
1500
1700
1000
1200
1400
1600
VS-94/104MT..K
40 (1)
Note
(1)
For single AC switch
Revision: 03-Mar-14
Document Number: 94351
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-54-94-104MT..KPbF Series
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Vishay Semiconductors
FORWARD CONDUCTION
VALUES VALUES
VALUES
104MT.K
PARAMETER
SYMBOL
TEST CONDITIONS
For all conduction angle
UNITS
54MT.K
94MT.K
50
90
100
80
A
Maximum IRMS output current
at case temperature
IO
80
80
°C
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
390
410
330
345
770
700
540
500
7700
950
1130
1180
950
No voltage
Maximum peak, one-cycle
forward, non-repetitive
on state surge current
reapplied
1000
800
ITSM
A
100 % VRRM
reapplied
840
1000
6380
5830
4510
4120
63 800
Initial TJ = TJ
maximum
4525
4130
3200
2920
45 250
No voltage
reapplied
Maximum I2t for fusing
I2t
A2s
100 % VRRM
reapplied
Maximum I2t for fusing
I2t
t = 0.1 ms to 10 ms, no voltage reapplied
A2s
Low level value of
VT(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum
1.16
1.44
0.99
1.19
4.16
3.56
1.55
150
0.99
1.15
3.90
3.48
1.53
threshold voltage
V
High level value of
threshold voltage
VT(TO)2
rt1
(I > x IT(AV)), TJ maximum
Low level value on-state
slope resistance
16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum
(I > x IT(AV)), TJ maximum
12.54
11.00
2.68
m
High level value on-state
slope resistance
rt2
Maximum on-state voltage
drop
Ipk = 150 A, TJ = 25 °C
tp = 400 μs single junction
VTM
dI/dt
V
Maximum non-repetitive rate
of rise of turned on current
TJ = 25 °C, from 0.67 VDRM, ITM = x IT(AV),
Ig = 500 mA, tr < 0.5 μs, tp > 6 μs
A/μs
TJ = 25 °C, anode supply = 6 V,
Maximum holding current
Maximum latching current
IH
IL
200
400
resistive load, grate open circuit
mA
TJ = 25 °C, anode supply = 6 V, resistive load
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
54MT.K
94MT.K
104MT.K UNITS
TJ = 25 °C all terminal shorted
f = 50 Hz, t = 1 s
RMS isolation voltage
VINS
4000
V
Maximum critical rate of rise of
off-state voltage
TJ = TJ maximum, linear to 0.67 VDRM,
gate open circuit
dV/dt (1)
500
V/μs
Note
(1)
Available with dV/dt = 1000 V/μs, to complete code add S90 i. e. 104MT160KBS90
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
54MT.K
94MT.K 104MT.K UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
PGM
PG(AV)
IGM
10
W
2.5
TJ = TJ maximum
2.5
A
Maximum peak negative
gate voltage
- VGT
10
TJ = 40 °C
TJ = 25 °C
TJ = 125 °C
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
4.0
2.5
1.7
270
150
80
V
Maximum required DC gate
VGT
voltage to trigger
Anode supply = 6 V, resistive
load
Maximum required DC gate
current to trigger
IGT
mA
Maximum gate voltage
VGD
IGD
0.25
6
V
that will not trigger
TJ = TJ maximum, rated VDRM applied
Maximum gate current
that will not trigger
mA
Revision: 03-Mar-14
Document Number: 94351
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-54-94-104MT..KPbF Series
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
54MT.K
94MT.K
104MT.K UNITS
Maximum junction operating
and storage temperature range
TJ, TStg
-40 to 125
°C
DC operation per single AC switch
DC operation per junction
0.52
1.05
0.56
1.12
0.39
0.77
0.40
0.80
0.34
0.69
Maximum thermal resistance,
junction to case
RthJC
180 °C sine cond. angle per single AC switch
180 °C sine cond. angle per junction
0.36
K/W
0.72
Maximum thermal resistance,
case to heatsink
Per module
Mounting surface smooth, flat and grased
RthCS
0.03
to heatsink
to terminal
A mounting compound is recommended and
the torque should be rechecked after a
period of 3 hours to allow for the spread of
the
4 to 6
3 to 4
Mounting
Nm
g
torque 100 %
Approximate weight
225
compound. Lubricated threads.
R CONDUCTION PER JUNCTION
SINUSOIDAL CONDUCTION
AT TJ MAXIMUM
RECTANGULAR CONDUCTION
AT TJ MAXIMUM
DEVICES
UNITS
180°
0.072
0.033
0.027
120°
90°
60°
30°
180°
0.055
0.027
0.023
120°
0.091
0.044
0.037
90°
60°
30°
54MT.K
94MT.K
104MT.K
0.085
0.039
0.033
0.108
0.051
0.042
0.152
0.069
0.057
0.233
0.099
0.081
0.117
0.055
0.046
0.157
0.071
0.059
0.236
0.100
0.082
K/W
Note
Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
•
130
120
110
100
90
1000
100
10
54MT..K Series
Device fully turned-on
TJ = 25 °C
TJ = 125 °C
Per single AC switch
80
IRMS
~
For all conduction angles
10 20
30
54MT..K Series
Per junction
70
1
60
5
0
1
2
3
4
6
50
0
40
60
Instantaneous On-State Voltage (V)
Fig. 2 - Forward Voltage Drop Characteristics
RMS Output Current (A)
Fig. 1 - Current Ratings Characteristic
Revision: 03-Mar-14
Document Number: 94351
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-54-94-104MT..KPbF Series
www.vishay.com
Vishay Semiconductors
350
300
250
200
150
100
50
350
300
250
200
150
100
50
54MT..K Series
180°
120°
90°
60°
30°
TJ = 125 °C
Device fully
turned-on
Ø
Ø
Conduction angle
0
0
100
0
25
50
75
125
120
5
60
0
10
20
30
40
50
Maximum Allowable Ambient
Temperature (°C)
RMS Output Current (A)
Fig. 3 - Total Power Loss Characteristics
350
325
300
275
250
225
200
175
150
130
At any rated load condition and with
rated VRRM applied following surge.
94MT..K Series
Device fully turned-on
120
110
100
90
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Per single AC switch
IRMS
80
~
70
54MT..K Series
Per junction
60
For all conduction angles
20 40 60
50
1
10
100
0
80
100
Number of Equal Amplitude Half
Cycle Current Pulses (N)
RMS Output Current (A)
Fig. 4 - Maximum Non-Repetitive Surge Current
Fig. 6 - Current Ratings Characteristic
400
1000
100
10
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
Initial TJ = 125° C
350
300
250
200
150
No voltage reapplied
Rated VRRM reapplied
TJ = 25 °C
TJ = 125 °C
94MT..K Series
Per junction
54MT..K Series
Per junction
1
0.01
0.1
1
0
1
2
4
3
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Instantaneous On-State Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Revision: 03-Mar-14
Document Number: 94351
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-54-94-104MT..KPbF Series
www.vishay.com
Vishay Semiconductors
450
400
350
300
250
200
150
100
50
450
400
350
300
250
200
150
100
50
94MT..K Series
TJ = 125 °C
Device fully
turned-on
180°
120°
90°
60°
30°
Ø
Ø
Conduction angle
0
0
90
0
10 20 30 40 50 60 70 80
100
0
25
50
75
100
125
RMS Output Current (A)
Maximum Allowable Ambient
Temperature (°C)
Fig. 8 - Total Power Loss Characteristics
750
700
650
600
550
500
450
400
350
130
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 125 °C
104MT..K Series
Device fully turned-on
120
110
100
90
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Per single AC switch
IRMS
80
~
70
94MT..K Series
Per junction
For all conduction angles
60
1
10
100
100
0
20
40
60
80
120
Number of Equal Amplitude Half
Cycle Current Pulses (N)
RMS Output Current (A)
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 11 - Current Ratings Characteristic
1000
100
10
1000
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
Initial TJ = 125 °C
900
800
700
600
500
400
300
No voltage reapplied
Rated VRRM reapplied
TJ = 25 °C
TJ = 125 °C
104MT..K Series
Per junction
94MT..K Series
Per junction
1
0
1
2
3
4
5
0.1
0.01
1
Instantaneous On-State Voltage (V)
Fig. 12 - Forward Voltage Drop Characteristics
Pulse Train Duration (s)
Fig. 10 - Maximum Non-Repetitive Surge Current
Revision: 03-Mar-14
Document Number: 94351
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-54-94-104MT..KPbF Series
www.vishay.com
Vishay Semiconductors
500
450
400
350
300
250
200
150
100
50
500
450
400
350
300
250
200
150
100
50
104MT..K Series
180°
TJ = 125 °C
120°
Device fully
90°
turned-on
60°
30°
Ø
Ø
Conduction angle
0
0
100
0
20
40
60
80
100
120
0
25
50
75
125
Maximum Allowable Ambient
Temperature (°C)
RMS Output Current (A)
Fig. 13 - Total Power Loss Characteristics
1100
1000
900
800
700
600
500
400
1200
At any rated load condition and with
rated VRRM applied following surge.
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
Initial TJ = 125 °C
1100
1000
900
800
700
600
500
400
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
No voltage reapplied
Rated VRRM reapplied
104MT..K Series
Per junction
104MT..K Series
Per junction
1
10
100
0.01
0.1
1
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 15 - Maximum Non-Repetitive Surge Current
10
Steady state value
R
thJC = 1.05 K/W
54MT..K Series
104MT..K Series
RthJC = 0.77 K/W
RthJC = 0.69 K/W
(DC operation)
94MT..K Series
1
0.1
0.01
Per junction
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 16 - Thermal Impedance ZthJC Characteristics
Revision: 03-Mar-14
Document Number: 94351
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-54-94-104MT..KPbF Series
www.vishay.com
Vishay Semiconductors
100
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 30 Ω
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
tr = 0.5 µs, tp ≥ 6 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 20 V, 65 Ω
tr = 1 µs, tp ≥ 6 µs
10
1
(a)
(b)
(1)
(4) (3)
(2)
VGD
IGD
Frequency limited by PG(AV)
10 100
54/ 94/ 104MT..K Series
0.1
0.1
0.001
0.01
1
1000
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
10
4
MT 160
K
PbF
1
2
3
4
5
6
1
2
-
-
Vishay Semiconductors product
Current rating code: 5 = 50 A (average)
9 = 90 A (average)
10 = 100 A (average)
3
-
AC switch
4
5
-
-
Essential part number
Voltage code x 10 = VRRM (see Voltage Ratings table)
6
-
PbF = Lead (Pb)-free
Note
To order the optional hardware go to www.vishay.com/doc?95172
•
CIRCUIT CONFIGURATION
A
B
C
1
2
5
6
3
4
D
E
F
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95004
Revision: 03-Mar-14
Document Number: 94351
7
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
MTK (with and without optional barrier)
DIMENSIONS WITH OPTIONAL BARRIERS in millimeters (inches)
Fast-on tab 208 x ꢀ08 (type 11ꢀꢁ
Screws M. x ꢀ08 length 1ꢀ
24 ꢀ0.
(ꢀ094 ꢀ0ꢀ2ꢁ
3. ꢀ03
(1038 ꢀ0ꢀ1ꢁ
.
ꢀ03
7. ꢀ0.
(ꢀ02 ꢀ0ꢀ1ꢁ
(209. ꢀ0ꢀ2ꢁ
A
B
C
1
3
2
4
.
7
6
8
D
E
F
46 ꢀ03
(1081 ꢀ0ꢀ1ꢁ
8ꢀ ꢀ03
(301. ꢀ0ꢀ1ꢁ
94 ꢀ03
(307 ꢀ0ꢀ1ꢁ
Document Number: 95004
Revision: 27-Aug-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Outline Dimensions
Vishay Semiconductors
MTK (with and without optional barrier)
DIMENSIONS WITHOUT OPTIONAL BARRIERS in millimeters (inches)
Screws M. x ꢀ08 length 1ꢀ
Fast-on tab 208 x ꢀ08 (type 11ꢀꢁ
24 ꢀ0.
(ꢀ094 ꢀ0ꢀ2ꢁ
3. ꢀ03
(1038 ꢀ0ꢀ1ꢁ
7. ꢀ0.
.
ꢀ03
(209. ꢀ0ꢀ2ꢁ
(ꢀ02 ꢀ0ꢀ1ꢁ
A
B
C
1
3
2
4
.
7
6
8
D
E
F
46 ꢀ03
(1081 ꢀ0ꢀ1ꢁ
8ꢀ ꢀ03
(301. ꢀ0ꢀ1ꢁ
94 ꢀ03
(307 ꢀ0ꢀ1ꢁ
www.vishay.com
2
For technical questions, contact: indmodules@vishay.com
Document Number: 95004
Revision: 27-Aug-07
Legal Disclaimer Notice
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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VISHAY
VS-95PF140
Rectifier Diode, 1 Phase, 1 Element, 95A, 1400V V(RRM), Silicon, DO-203AB, DO-5, 1 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
VS-95PF160W
Rectifier Diode, 1 Phase, 1 Element, 95A, 1600V V(RRM), Silicon, DO-203AB, DO-5, 1 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
VS-95PF40T
DIODE GEN PURP 400V 95A DO203ABWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
VS-95PF80W
Rectifier Diode, 1 Phase, 1 Element, 95A, 800V V(RRM), Silicon, DO-203AB, DO-5, 1 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
VS-95PFR120W
DIODE GEN PURP 1.2KV 95A DO203ABWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
VS-95PFR40
Rectifier Diode, 1 Phase, 1 Element, 95A, 400V V(RRM), Silicon, DO-203AB, DO-5, 1 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
VS-95PFR40T
DIODE GEN PURP 400V 95A DO203ABWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
VS-95PFR40W
DIODE GEN PURP 400V 95A DO203ABWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
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