VS-EPH3006-F3 [VISHAY]
Hyperfast Rectifier, 30 A FRED Pt; 超快整流器， 30 A FRED铂
| 型号： | VS-EPH3006-F3 |
| 厂家： | 
VISHAY |
| 描述： | Hyperfast Rectifier, 30 A FRED Pt |
| 文件： | 总11页 (文件大小：234K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
VS-APH3006-F3, VS-APH3006-N3, VS-EPH3006-F3, VS-EPH3006-N3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 30 A FRED Pt®
FEATURES
• Low forward voltage drop
• Hyperfast soft recovery time
• 175 °C operating junction temperature
• Designed and qualified according to
JEDEC-JESD47
TO-247AC
4, 2
TO-247AC modified
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
2
1
3
1
3
DESCRIPTION/APPLICATIONS
Anode
Cathode
Anode
Anode
Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop, hyperfast recovery
time, and soft recovery.
VS-APH3006-F3
VS-APH3006-N3
VS-EPH3006-F3
VS-EPH3006-N3
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
PRODUCT SUMMARY
TO-247AC,
TO-247AC modified (2 pins)
Package
These devices are intended for use in PFC Boost stage in
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
IF(AV)
VR
30 A
600 V
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
VF at IF
2.65 V
27 ns
t
rr typ.
TJ max.
175 °C
Single die
Diode variation
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VRRM
TEST CONDITIONS
MAX.
600
30
UNITS
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
V
IF(AV)
TC = 112 °C
TC = 25 °C
A
IFSM
220
Operating junction and storage
temperatures
TJ, TStg
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
IF = 30 A
600
-
-
V
-
-
-
-
-
-
2.0
1.4
-
2.65
1.8
30
300
-
Forward voltage
VF
IR
IF = 30 A, TJ = 150 °C
VR = VR rated
Reverse leakage current
μA
TJ = 150 °C, VR = VR rated
VR = 600 V
-
Junction capacitance
Series inductance
CT
LS
20
8.0
pF
Measured lead to lead 5 mm from package body
-
nH
Revision: 05-Apr-12
Document Number: 93571
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-APH3006-F3, VS-APH3006-N3, VS-EPH3006-F3, VS-EPH3006-N3
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
26
35
-
Reverse recovery time
trr
26
ns
TJ = 125 °C
70
-
IF = 30 A
TJ = 25 °C
3.5
7.6
50
-
Peak recovery current
IRRM
dIF/dt = 200 A/μs
A
TJ = 125 °C
-
VR = 200 V
TJ = 25 °C
-
Reverse recovery charge
Qrr
nC
TJ = 125 °C
280
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 65
-
175
°C
Thermal resistance,
junction to case
RthJC
RthJA
RthCS
-
-
-
0.7
-
1.1
70
-
°C/W
Thermal resistance,
junction to ambient per leg
Typical socket mount
Thermal resistance,
case to heatsink
Mounting surface, flat, smooth and
greased
0.5
-
-
5.5
0.2
-
-
g
Weight
oz.
1.2
(10)
2.4
(20)
kgf · cm
(lbf · in)
Mounting torque
Marking device
-
Case style TO-247AC
APH3006
EPH3006
Case style TO-247AC modified
Revision: 05-Apr-12
Document Number: 93571
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-APH3006-F3, VS-APH3006-N3, VS-EPH3006-F3, VS-EPH3006-N3
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Vishay Semiconductors
1000
1000
100
10
175 °C
100
150 °C
125 °C
10
100 °C
1
75 °C
0.1
0.01
50 °C
25 °C
0.001
0.0001
TJ = 175 °C
0
100
200
300
400
500
600
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
TJ = 150 °C
100
10
1
TJ = 25 °C
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0 3.5
0
100
200
300
400
500
600
Forward Voltage Drop-VFM (V)
ReverseVoltage-VR (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
D = 0.5
D = 0.2
D = 0.1
1
D = 0.05
D = 0.02
D = 0.01
0.1
Single Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1, Rectangular Pulse Duration (s)
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
Revision: 05-Apr-12
Document Number: 93571
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-APH3006-F3, VS-APH3006-N3, VS-EPH3006-F3, VS-EPH3006-N3
www.vishay.com
Vishay Semiconductors
80
180
170
160
150
140
130
120
110
100
90
RMS Limit
60
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
40
DC
20
0
80
0
5
10 15 20 25 30 35 40 45
0
10
20
30
40
50
Average Forward Current - IF(AV) (A)
Average Forward Current - IF(AV) (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
900
90
80
800
700
600
500
400
300
200
10
IF = 30 A, 125 °C
70
60
50
40
30
20
10
IF = 30 A, 125 °C
IF = 30 A, 25 °C
typical value
IF = 30 A, 25 °C
typical value
0
100
1000
100
1000
dIF/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery vs. dIF/dt
Revision: 05-Apr-12
Document Number: 93571
4
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-APH3006-F3, VS-APH3006-N3, VS-EPH3006-F3, VS-EPH3006-N3
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 05-Apr-12
Document Number: 93571
5
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-APH3006-F3, VS-APH3006-N3, VS-EPH3006-F3, VS-EPH3006-N3
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ORDERING INFORMATION TABLE
Device code
VS-
E
P
H
30
06 -F3
1
2
3
4
5
6
7
-
-
Vishay Semiconductors product
1
Ultrafast MUR series
• A = Single diode
• E = Single diode (modified)
2
-
-
-
-
-
P = TO-247AC
3
4
5
6
7
H = Hyperfast recovery time
Current code (30 = 30 A)
Voltage code (06 = 600 V)
Environmental digit:
-F3 = RoHS compliant and totally lead (Pb)-free
-N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-APH3006-F3
VS-APH3006-N3
VS-EPH3006-F3
VS-EPH3006-N3
25
500
500
500
500
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
25
25
25
LINKS TO RELATED DOCUMENTS
TO-247AC
www.vishay.com/doc?95223
Dimensions
TO-247AC modified
TO-247AC
www.vishay.com/doc?95253
www.vishay.com/doc?95007
www.vishay.com/doc?95442
Part marking information
TO-247AC modified
Revision: 05-Apr-12
Document Number: 93571
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
Ø P
(Datum B)
FP1
B
A2
A
N
S
M
M
Ø K D B
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
L
4
D
1
2
3
Thermal pad
(5) L1
C
(4)
E1
A
See view B
M
M
0.01 D B
2 x b2
3 x b
View A - A
C
2 x e
A1
b4
M
M
0.10 C A
Lead assignments
(b1, b3, b5)
Planting
Base metal
Diodes
D D E
E
1. - Anode/open
2. - Cathode
3. - Anode
(c)
c1
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.50
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
19.71
13.08
MAX.
5.31
2.59
2.49
1.40
1.35
2.39
2.37
3.43
3.38
0.86
0.76
20.70
-
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.094
0.135
0.133
0.034
0.030
0.815
-
MIN.
0.51
MAX.
1.30
15.87
-
MIN.
MAX.
0.051
0.625
-
A
A1
A2
b
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
D2
E
0.020
0.602
0.540
15.29
13.72
3
E1
e
5.46 BSC
2.54
0.215 BSC
0.010
0.559
b1
b2
b3
b4
b5
c
FK
L
14.20
3.71
16.10
4.29
0.634
0.169
L1
N
0.146
7.62 BSC
0.3
P
P1
Q
3.56
3.66
6.98
5.69
5.49
0.14
-
0.144
0.275
0.224
0.216
-
c1
D
5.31
4.52
0.209
1.78
3
4
R
D1
S
5.51 BSC
0.217 BSC
Notes
(1)
(2)
(3)
Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
(5)
(6)
(7)
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
Document Number: 95223
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
ΦP
(Datum B)
B
A2
A
N
S
M
M
Ø K D B
ΦP1
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
L
4
D
1
2
3
Thermal pad
(5) L1
C
(4)
E1
A
See view B
2 x b2
3 x b
View A - A
C
2 x e
A1
b4
M
M
0.10 C A
Lead assignments
(b1, b3, b5)
Planting
Base metal
Diodes
D D E
E
1. - Anode/open
2. - Cathode
3. - Anode
(c)
c1
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.50
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
19.71
13.08
MAX.
5.31
2.59
2.49
1.40
1.35
2.39
2.37
3.43
3.38
0.86
0.76
20.70
-
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.094
0.135
0.133
0.034
0.030
0.815
-
MIN.
0.51
MAX.
1.30
15.87
-
MIN.
0.020
0.602
0.540
MAX.
0.051
0.625
-
A
A1
A2
b
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
D2
E
15.29
13.72
3
E1
e
5.46 BSC
2.54
0.215 BSC
0.010
0.634
b1
b2
b3
b4
b5
c
K
L
14.20
3.71
16.10
4.29
0.559
0.146
L1
N
0.169
7.62 BSC
0.3
P
P1
Q
3.56
3.66
6.98
5.69
5.49
0.14
-
0.144
0.275
0.224
0.216
-
c1
D
5.31
4.52
0.209
1.78
3
4
R
D1
S
5.51 BSC
0.217 BSC
Notes
(1)
(2)
(3)
Dimensioning and tolerance per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
(5)
(6)
(7)
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 21-Jun-11
Document Number: 95253
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Part Marking Information
www.vishay.com
Vishay Semiconductors
TO-247AC modified E
Example: This is a xxxxxxx (1) with
assembly lot code AC,
assembled on WW 19, 2011
in the assembly line ”X”
Part number
xxxxxxx (1)
V
Z119X
C
Product version (optional):
Z (replaced according below table)
Date code:
A
Assembly
lot code
Year 1 = 2011
Week 19
Line X
Note
(1)
If part number contain “H” as last digit, product is AEC-Q101 qualified
ENVIRONMENTAL NAMING CODE (Z)
PRODUCT DEFINITION
Termination lead (Pb)-free
A
B
E
F
Totally lead (Pb)-free
RoHS compliant and termination lead (Pb)-free
RoHS compliant and totally lead (Pb)-free
M
N
G
Halogen-free, RoHS compliant and termination lead (Pb)-free
Halogen-free, RoHS compliant and totally lead (Pb)-free
Green
Revision: 09-Aug-11
Document Number: 95442
1
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
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VS-APH3006-F3 VS-EPH3006-F3
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VISHAY
VS-ETH1506-M3
DIODE 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Rectifier Diode
VISHAY
VS-ETH1506S-M3
DIODE 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3, Rectifier Diode
VISHAY
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