VS-ETU3006STRL-M3 [VISHAY]
DIODE 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3, Rectifier Diode;型号: | VS-ETU3006STRL-M3 |
厂家: | VISHAY |
描述: | DIODE 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3, Rectifier Diode 超快软恢复二极管 快速软恢复二极管 |
文件: | 总10页 (文件大小:246K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VS-ETU3006S-M3, VS-ETU3006-1-M3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 30 A FRED Pt®
FEATURES
• Low forward voltage drop
• Ultrafast recovery time
• 175 °C operating junction temperature
• Low leakage current
2
1
1
2
• Designed and qualified according to
JEDEC®-JESD 47
3
D2PAK (TO-263AB)
3
TO-262AA
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
Base
cathode
2
2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Ultralow VF, soft-switching ultrafast rectifiers optimized for
Discontinuous (Critical) Mode (DCM) Power Factor
Correction (PFC).
3
1
N/C
3
1
N/C
Anode
Anode
D2PAK
TO-262
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
PRIMARY CHARACTERISTICS
IF(AV)
30 A
600 V
1.15 V
30 ns
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
VR
VF at IF
trr (typ.)
TJ max.
APPLICATIONS
175 °C
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units, and DVD AC/DC power supplies.
Package
D2PAK (TO-263AB), TO-262AA
Circuit configuration
Single
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VRRM
TEST CONDITIONS
MAX.
600
UNITS
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
V
IF(AV)
TC = 113 °C
TC = 25 °C
30
A
IFSM
200
TJ, TStg
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
VBR
VR
,
IR = 100 μA
IF = 30 A
600
-
-
blocking voltage
V
-
-
-
-
-
-
1.4
1.15
0.02
30
2.0
1.35
30
250
-
Forward voltage
VF
IR
IF = 30 A, TJ = 150 °C
VR = VR rated
Reverse leakage current
μA
TJ = 150 °C, VR = VR rated
VR = 600 V
Junction capacitance
Series inductance
CT
LS
20
pF
nH
Measured lead to lead 5 mm from package body
8.0
-
Revision: 26-Oct-17
Document Number: 93592
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETU3006S-M3, VS-ETU3006-1-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
30
45
-
Reverse recovery time
trr
45
ns
TJ = 125 °C
100
5.6
10
-
IF = 30 A
TJ = 25 °C
-
Peak recovery current
IRRM
Qrr
dIF/dt = 200 A/μs
A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
-
VR = 200 V
127
580
-
Reverse recovery charge
nC
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction and storage
temperature range
TJ, TStg
-65
-
175
°C
Thermal resistance,
RthJC
RthJA
RthCS
-
-
-
0.95
-
1.4
70
-
°C/W
junction-to-case
Thermal resistance,
junction-to-ambient
Typical socket mount
Thermal resistance,
case-to-heatsink
Mounting surface, flat, smooth, and greased
0.5
-
-
2.0
-
-
g
Weight
0.07
oz.
6
(5)
12
(10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
-
Case style D2PAK (TO-263AB)
Case style TO-262AA
ETU3006S
ETU3006-1
1000
1000
175°C
150°C
125°C
100°C
100
10
100
TJ = 175 °C
1
75°C
TJ = 150 °C
10
0.1
0.01
50°C
25°C
TJ = 25 °C
1
0.001
0.0
0.5
1.0
1.5
2.0
2.5
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
VFM - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Revision: 26-Oct-17
Document Number: 93592
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETU3006S-M3, VS-ETU3006-1-M3
www.vishay.com
Vishay Semiconductors
1000
100
10
1
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
D = 0.5
1
D = 0.2
D = 0.1
D = 0.05
0.1
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-0
1E+00
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
60
50
180
170
160
150
140
130
120
110
100
90
RMS Limit
40
30
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
DC
20
10
0
0
5
10 15 20 25 30 35 40 45
0
5
10 15 20 25 30 35 40 45
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Revision: 26-Oct-17
Document Number: 93592
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETU3006S-M3, VS-ETU3006-1-M3
www.vishay.com
Vishay Semiconductors
130
120
110
1800
1600
1400
100
90
80
70
60
50
40
30
20
10
IF = 30 A, 125 °C
IF = 30 A, 125 °C
1200
1000
800
600
400
200
0
IF = 30 A, 25 °C
typical value
IF = 30 A, 25 °C
typical value
100
1000
100
1000
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
di(rec)M/dt
0.75 IRRM
diF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) diF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 26-Oct-17
Document Number: 93592
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETU3006S-M3, VS-ETU3006-1-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
E
T
U
30
06
S
TRL -M3
1
2
3
4
5
6
7
8
9
-
-
Vishay Semiconductors product
1
Circuit configuration
E = single
2
-
-
-
-
-
-
-
T = TO-220
3
4
5
6
7
U = ultrafast recovery time
Current code (30 = 30 A)
Voltage code (06 = 600 V)
• S = D2PAK (TO-263AB)
• -1 = TO-262AA
• None = tube (50 pieces)
8
9
-
-
-
• TRL = tape and reel (left oriented, for D2PAK (TO-263AB) package)
• TRR = tape and reel (right oriented, for D2PAK (TO-263AB) package)
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
13" diameter reel
VS-ETU3006S-M3
VS-ETU3006-1-M3
VS-ETU3006STRR-M3
VS-ETU3006STRL-M3
50
50
1000
1000
800
800
800
800
13" diameter reel
LINKS TO RELATED DOCUMENTS
D2PAK (TO-263AB)
www.vishay.com/doc?96164
Dimensions
TO-262AA
www.vishay.com/doc?96165
www.vishay.com/doc?95444
www.vishay.com/doc?95443
www.vishay.com/doc?95032
www.vishay.com/doc?96438
D2PAK (TO-263AB)
TO-262AA
D2PAK (TO-263AB)
Part marking information
Packaging information
SPICE model
Revision: 26-Oct-17
Document Number: 93592
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2PAK (SMD-220)
B
A
Pad layout
A
(2)(3)
E
A
(E)
c2
11.00
MIN.
(0.43)
(3)
D
L1
4
2
9.65
MIN.
(0.38)
(D1) (3)
Detail A
17.90 (0.70)
15.00 (0.625)
H
(2)
1
3
3.81
MIN.
L2
(0.15)
B
B
2.32
MIN.
(0.08)
A
B
2.64 (0.103)
2.41 (0.096)
(3)
E1
2 x b2
2 x b
C
c
View A - A
0.004 M
Base
Metal
0.010 M
M
B
A
Plating
(4)
b1, b3
2 x
e
H
Gauge
plane
(4)
c1
(c)
B
0° to 8°
Seating
plane
L3
A1
Lead tip
(b, b2)
L
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
MILLIMETERS
INCHES
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
MAX.
4.83
0.254
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
MIN.
6.86
9.65
7.90
MAX.
8.00
MIN.
MAX.
0.315
0.420
0.346
A
A1
b
D1
E
0.270
0.380
0.311
3
2, 3
3
10.67
8.80
E1
e
b1
b2
b3
c
4
4
4
2
2.54 BSC
0.100 BSC
H
14.61
1.78
-
15.88
2.79
1.65
1.78
0.575
0.070
-
0.625
0.110
0.066
0.070
L
L1
L2
L3
L4
3
c1
c2
D
1.27
0.050
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-262
DIMENSIONS in millimeters and inches
Modified JEDEC outline TO-262
(2) (3)
E
A
(Datum A)
B
A
c2
E
A
(3)
L1
D
Seating
plane
D1(3)
1
2
3
C
C
L2
B
B
L (2)
A
c
(3)
E1
3 x b2
3 x b
A1
Section A - A
2 x e
Base
metal
(4)
b1, b3
Plating
c
M
M
B
0.010
A
Lead assignments
c1
(4)
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
(b, b2)
Lead tip
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
SYMBOL
NOTES
MIN.
4.06
2.03
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
6.86
9.65
7.90
MAX.
4.83
3.02
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
8.00
10.67
8.80
MIN.
0.160
0.080
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
0.270
0.380
0.311
MAX.
0.190
0.119
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
0.315
0.420
0.346
A
A1
b
b1
b2
b3
c
4
4
4
c1
c2
D
2
3
D1
E
2, 3
3
E1
e
2.54 BSC
0.100 BSC
L
13.46
-
14.10
1.65
3.71
0.530
-
0.555
0.065
0.146
L1
L2
3
3.56
0.140
Notes
(1)
(4)
(5)
(6)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
Dimension b1 and c1 apply to base metal only
Controlling dimension: inches
Outline conform to JEDEC TO-262 except A1 (maximum), b
(minimum) and D1 (minimum) where dimensions derived the
actual package outline
(2)
(3)
Thermal pad contour optional within dimension E, L1, D1 and E1
Document Number: 95419
Revision: 04-Oct-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Part Marking Information
www.vishay.com
Vishay Semiconductors
TO-262
Example: This is a xxxxxxx-1 (1) with
assembly lot code AC,
Part number
xxxxxxx-1 (1)
assembled on WW 19, 2001
in the assembly line ”X”
V
ZYWWX
C
A
Product version (optional):
Z (replaced according below table)
Date code:
Assembly
lot code
Year 1 = 2001
Week 19
Line X
Note
(1)
If part number contain “H” as last digit, product is AEC-Q101 qualified
ENVIRONMENTAL NAMING CODE (Z)
PRODUCT DEFINITION
Termination lead (Pb)-free
A
B
E
F
Totally lead (Pb)-free
RoHS-compliant and termination lead (Pb)-free
RoHS-compliant and totally lead (Pb)-free
M
N
G
Halogen-free, RoHS-compliant and termination lead (Pb)-free
Halogen-free, RoHS-compliant and totally lead (Pb)-free
Green
Revision: 21-Jun-17
Document Number: 95443
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Part Marking Information
www.vishay.com
Vishay Semiconductors
D2PAK
Example: This is a xxxxxx (1) with
assembly lot code AC,
Part number
xxxxxx (1)
assembled on WW 02, 2010
V
ZYWWX
C
Product version (optional):
Z (replaced according below table)
Date code:
A
Assembly
lot code
Year 0 = 2010
Week 02
Line X
Note
(1)
If part number contain “H” as last digit, product is AEC-Q101 qualified
ENVIRONMENTAL NAMING CODE (Z)
PRODUCT DEFINITION
Termination lead (Pb)-free
A
B
E
F
Totally lead (Pb)-free
RoHS-compliant and termination lead (Pb)-free
RoHS-compliant and totally lead (Pb)-free
M
N
G
Halogen-free, RoHS-compliant, and termination lead (Pb)-free
Halogen-free, RoHS-compliant, and totally lead (Pb)-free
Green
Revision: 21-Jun-17
Document Number: 95444
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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VISHAY
VS-FA57SA50LCP
Power Field-Effect Transistor, 57A I(D), 500V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
VISHAY
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