VS-HFA08TB60-N3 [VISHAY]
DIODE RECTIFIER DIODE, Rectifier Diode;
| 型号： | VS-HFA08TB60-N3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE RECTIFIER DIODE, Rectifier Diode 局域网 功效 光电二极管 |
| 文件： | 总8页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-HFA08TB60PbF, VS-HFA08TB60-N3
www.vishay.com
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 8 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
• Designed and qualified according to
JEDEC®-JESD47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
TO-220AC
Base
cathode
2
Available
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
1
3
Cathode Anode
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA08TB60... is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 8 A continuous current, the
VS-HFA08TB60... is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED® product line features
extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to “snap-off” during the tb
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA08TB60... is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRODUCT SUMMARY
Package
TO-220AC
8 A
IF(AV)
VR
600 V
VF at IF
1.4 V
t
rr typ.
18 ns
TJ max.
150 °C
Single die
Diode variation
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VR
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
600
V
Maximum continuous forward current
Single pulse forward current
IF
TC = 100 °C
8
IFSM
IFRM
60
A
Maximum repetitive forward current
24
36
TC = 25 °C
Maximum power dissipation
PD
W
TC = 100 °C
14
Operating junction and storage temperature range
TJ, TStg
-55 to +150
°C
Revision: 10-Jul-15
Document Number: 94047
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA08TB60PbF, VS-HFA08TB60-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
VBR
IR = 100 μA
600
-
-
IF = 8.0 A
IF = 16 A
-
-
-
-
-
-
-
1.4
1.7
1.4
0.3
100
10
1.7
2.1
1.7
5.0
500
25
V
Maximum forward voltage
VFM
See fig. 1
IF = 8.0 A, TJ = 125 °C
VR = VR rated
Maximum reverse
leakage current
IRM
See fig. 2
See fig. 3
μA
TJ = 125 °C, VR = 0.8 x VR rated
Junction capacitance
Series inductance
CT
LS
VR = 200 V
pF
nH
Measured lead to lead 5 mm from package body
8.0
-
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
18
MAX.
-
UNITS
trr
-
-
-
-
-
-
-
-
-
Reverse recovery time
trr1
37
55
90
5.0
8.0
138
360
-
ns
trr2
TJ = 125 °C
55
IRRM1
IRRM2
Qrr1
TJ = 25 °C
3.5
4.5
65
Peak recovery current
A
IF = 8.0 A
TJ = 125 °C
dIF/dt = 200 A/μs
R = 200 V
TJ = 25 °C
V
Reverse recovery charge
nC
Qrr2
TJ = 125 °C
124
240
210
dI(rec)M/dt1 TJ = 25 °C
dI(rec)M/dt2 TJ = 125 °C
Peak rate of fall of recovery
current during tb
A/μs
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Lead temperature
Tlead
0.063" from case (1.6 mm) for 10 s
-
-
300
°C
Thermal resistance,
junction to case
RthJC
RthJA
RthCS
-
-
-
-
-
3.5
80
-
Thermal resistance,
junction to ambient
Typical socket mount
K/W
Thermal resistance,
case to heatsink
Mounting surface, flat, smooth and greased
0.5
-
-
2.0
-
-
g
Weight
0.07
oz.
6.0
(5.0)
12
(10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
-
Case style TO-220AC
HFA08TB60
Revision: 10-Jul-15
Document Number: 94047
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA08TB60PbF, VS-HFA08TB60-N3
www.vishay.com
Vishay Semiconductors
100
10
1000
TJ = 150 °C
100
TJ = 125 °C
10
1
0.1
1
TJ = 25 °C
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.01
0.001
0.1
0.4
0
100
200
300
400
500
600
0.8
1.2
1.6
2.0
2.4
2.8
3.2
VR - Reverse Voltage (V)
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage
100
TJ = 25 °C
10
1
1
10
100
1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
t1
D = 0.50
D = 0.20
D = 0.10
0.1
t2
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal response)
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 10-Jul-15
Document Number: 94047
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA08TB60PbF, VS-HFA08TB60-N3
www.vishay.com
Vishay Semiconductors
80
60
40
20
0
500
VR = 200 V
TJ = 125 °C
IF = 16 A
IF = 8 A
IF = 4 A
TJ = 25 °C
400
300
IF = 16 A
IF = 8 A
IF = 4 A
200
100
0
VR = 200 V
TJ = 125 °C
TJ = 25 °C
100
1000
100
1000
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 7 - Typical Stored Charge vs. dIF/dt
20
10 000
VR = 200 V
TJ = 125 °C
TJ = 25 °C
IF = 16 A
IF = 8 A
IF = 4 A
15
10
5
IF = 16 A
IF = 8 A
IF = 4 A
1000
VR = 200 V
TJ = 125 °C
TJ = 25 °C
0
100
100
100
1000
1000
dIF/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dIF/dt
dIF/dt (A/µs)
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
Revision: 10-Jul-15
Document Number: 94047
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA08TB60PbF, VS-HFA08TB60-N3
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 10-Jul-15
Document Number: 94047
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA08TB60PbF, VS-HFA08TB60-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- HF
A
08
TB
60 PbF
1
2
3
4
5
6
7
1
2
3
4
-
-
-
-
-
Vishay Semiconductors product
HEXFRED® family
Electron irradiated
Current rating (08 = 8 A)
Package:
4
5
4
6
7
TB = TO-220AC
-
-
Voltage rating (60 = 600 V)
Environmental digit:
PbF = lead (Pb)-free and RoHS-compliant
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-HFA08TB60PbF
VS-HFA08TB60-N3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
50
50
1000
1000
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95221
www.vishay.com/doc?95224
www.vishay.com/doc?95068
TO-220ACPbF
TO-220AC-N3
Part marking information
Revision: 10-Jul-15
Document Number: 94047
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AC
DIMENSIONS in millimeters and inches
B
Seating
1
2
3
plane
(6)
A
D
D
E
A
Ø P
0.014 M B AM
A
L1
E
(7)
E2
C
C
A1
Thermal pad
Q
(6)
H1
H1
(7)
D2 (6)
2 x b2
2 x b
(6)
Detail B
D
Detail B
θ
D1
1
3
2
Lead tip
L3
L4
C
E1 (6)
Lead assignments
Diodes
L
1 + 2 - Cathode
3 - Anode
c
A
Conforms to JEDEC outline TO-220AC
View A - A
e1
A2
0.015 M B AM
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
MIN.
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.25
1.14
2.56
0.69
0.38
1.20
1.14
0.36
0.36
14.85
8.38
11.68
10.11
MAX.
4.65
1.40
2.92
1.01
0.97
1.73
1.73
0.61
0.56
15.25
9.02
12.88
10.51
MAX.
0.183
0.055
0.115
0.040
0.038
0.068
0.068
0.024
0.022
0.600
0.355
0.507
0.414
MIN.
6.86
-
MAX.
8.89
0.76
2.67
5.28
6.48
14.02
3.82
2.13
1.27
3.73
3.00
MAX.
0.350
0.030
0.105
0.208
0.255
0.552
0.150
0.084
0.050
0.147
0.118
A
A1
A2
b
0.167
0.045
0.101
0.027
0.015
0.047
0.045
0.014
0.014
0.585
0.330
0.460
0.398
E1
E2
e
0.270
-
6
7
2.41
4.88
6.09
13.52
3.32
1.78
0.76
3.54
2.60
0.095
0.192
0.240
0.532
0.131
0.070
0.030
0.139
0.102
e1
H1
L
b1
b2
b3
c
4
4
6, 7
2
L1
L3
L4
Ø P
Q
c1
D
4
3
2
D1
D2
E
6
90° to 93°
90° to 93°
3, 6
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Lead dimension and finish uncontrolled in L1
Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Dimension b1, b3 and c1 apply to base metal only
Controlling dimension: inches
Thermal pad contour optional within dimensions E, H1, D2 and E1
Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221
Revision: 07-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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