VS-HFA25PB60-N3 [VISHAY]
DIODE RECTIFIER DIODE, Rectifier Diode;
| 型号： | VS-HFA25PB60-N3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE RECTIFIER DIODE, Rectifier Diode 局域网 功效 光电二极管 |
| 文件： | 总7页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-HFA25PB60PbF, VS-HFA25PB60-N3
www.vishay.com
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 25 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
• Designed and qualified according to
JEDEC®-JESD47
2
3
• Material categorization:
1
for definitions of compliance please see
www.vishay.com/doc?99912
TO-247AC modified
Available
Cathode
to base
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
4
• Reduced snubbing
• Reduced parts count
2
3
Anode
2
1
DESCRIPTION
Cathode
VS-HFA25PB60... is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 25 A continuous current, the
VS-HFA25PB60... is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED® product line features
extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to “snap-off” during the
tb portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA25PB60... is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRODUCT SUMMARY
Package
TO-247AC modified (2 pins)
IF(AV)
25 A
600 V
VR
VF at IF
1.3 V
trr (yp.
23 ns
TJ max.
Diode variation
150 °C
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VR
TEST CONDITIONS
VALUES
600
UNITS
Cathode to anode voltage
V
Maximum continuous forward current
Single pulse forward current
IF
TC = 100 °C
25
IFSM
IFRM
225
A
Maximum repetitive forward current
100
TC = 25 °C
151
Maximum power dissipation
PD
W
TC = 100 °C
60
Operating junction and storage temperature range
TJ, TStg
-55 to +150
°C
Revision: 14-Jul-15
Document Number: 94064
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA25PB60PbF, VS-HFA25PB60-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
VBR
IR = 100 μA
600
-
-
IF = 25 A
IF = 50 A
-
-
-
-
-
-
-
1.3
1.5
1.3
1.5
600
55
1.7
2.0
1.7
20
V
Maximum forward voltage
VFM
See fig. 1
IF = 25 A, TJ = 125 °C
VR = VR rated
Maximum reverse
leakage current
IRM
See fig. 2
See fig. 3
μA
TJ = 125 °C, VR = 0.8 x VR rated
VR = 200 V
2000
100
-
Junction capacitance
Series inductance
CT
LS
pF
nH
Measured lead to lead 5 mm from package body
12
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
23
MAX.
-
UNITS
trr
-
-
-
-
-
-
-
Reverse recovery time
See fig. 5, 10
trr1
50
75
ns
trr2
TJ = 125 °C
105
4.5
160
10
IRRM1
IRRM2
Qrr1
TJ = 25 °C
Peak recovery current
See fig. 6, 10
A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
8.0
15
IF = 25 A
dIF/dt = 200 A/μs
VR = 200 V
112
420
375
1200
Reverse recovery charge
See fig. 7, 10
nC
Qrr2
Peak rate of fall of recovery
current during tb
See fig. 8, 10
dI(rec)M/dt1 TJ = 25 °C
dI(rec)M/dt2 TJ = 125 °C
-
-
250
160
-
-
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Lead temperature
Tlead
0.063" from case (1.6 mm) for 10 s
-
-
300
°C
Thermal resistance,
junction to case
RthJC
RthJA
RthCS
-
-
-
-
-
0.83
40
-
Thermal resistance,
junction to ambient
Typical socket mount
K/W
Thermal resistance,
case to heatsink
Mounting surface, flat, smooth and greased
0.25
-
-
6.0
-
-
g
Weight
0.21
oz.
6.0
(5.0)
12
(10)
kgf · cm
(lbf ·in)
Mounting torque
Marking device
-
Case style TO-247AC modified (JEDEC)
HFA25PB60
Revision: 14-Jul-15
Document Number: 94064
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA25PB60PbF, VS-HFA25PB60-N3
www.vishay.com
Vishay Semiconductors
100
10 000
TJ = 150 °C
1000
TJ = 125 °C
100
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
10
10
1
TJ = 25 °C
0.1
1
0.01
0.6
1.0
1.4
1.8
2.2
2.6
0
100
200
300
400
500
600
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage
1000
TJ = 25 °C
100
10
1
10
100
1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
PDM
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
D = 0.02
D = 0.01
Single pulse
(thermal response)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 14-Jul-15
Document Number: 94064
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA25PB60PbF, VS-HFA25PB60-N3
www.vishay.com
Vishay Semiconductors
140
120
100
80
1400
VR = 200 V
TJ = 125 °C
TJ = 25 °C
IF = 50 A
IF = 25 A
IF = 10 A
1200
1000
IF = 50 A
IF = 25 A
IF = 10 A
800
600
400
200
0
60
40
VR = 200 V
TJ = 125 °C
TJ = 25 °C
20
0
100
1000
100
1000
dIF/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
dIF/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dIF/dt
30
10 000
1000
100
VR = 200 V
TJ = 125 °C
TJ = 25 °C
VR = 200 V
TJ = 125 °C
TJ = 25 °C
25
20
15
10
5
IF = 30 A
IF = 15 A
IF = 5.0 A
IF = 50 A
IF = 25 A
IF = 10 A
0
100
1000
100
1000
dIF/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dIF/dt
dIF/dt (A/µs)
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
Revision: 14-Jul-15
Document Number: 94064
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA25PB60PbF, VS-HFA25PB60-N3
www.vishay.com
Vishay Semiconductors
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS- HF
A
25
PB
60 PbF
1
2
3
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
Vishay Semiconductors product
HEXFRED® family
Electron irradiated
Current rating (25 = 25 A)
-
PB = TO-247AC modified
-
Voltage rating: (60 = 600 V)
-
Environmental digit:
PbF = lead (Pb)-free and RoHS-compliant
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-HFA25PB60PbF
VS-HFA25PB60-N3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
25
25
500
500
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95541
TO-247AC modified PbF
TO-247AC modified -N3
www.vishay.com/doc?95255
www.vishay.com/doc?95442
Part marking information
Revision: 14-Jul-15
Document Number: 94064
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
TO-247AC modified - 50 mils L/F
DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
Ø P
(Datum B)
Ø P1
B
A2
A
S
M
M
Ø K D B
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
4
D
1
2
3
Thermal pad
(5) L1
C
L
(4)
E1
A
See view B
2 x b2
3 x b
View A - A
C
2 x e
A1
b4
M
M
0.10 C A
(b1, b3, b5)
Plating
Base metal
D D E
E
(c)
c1
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.17
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
19.71
13.08
MAX.
5.31
2.59
1.37
1.40
1.35
2.39
2.34
3.43
3.38
0.89
0.84
20.70
-
MAX.
0.209
0.102
0.054
0.055
0.053
0.094
0.092
0.135
0.133
0.035
0.033
0.815
-
MIN.
0.51
MAX.
1.35
15.87
-
MIN.
0.020
0.602
0.53
MAX.
0.053
0.625
-
A
A1
A2
b
0.183
0.087
0.046
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
D2
E
15.29
13.46
3
E1
e
5.46 BSC
0.254
16.10
0.215 BSC
0.010
0.634
b1
b2
b3
b4
b5
c
Ø K
L
14.20
3.71
3.56
-
0.559
0.146
0.14
-
L1
Ø P
Ø P1
Q
4.29
3.66
7.39
5.69
5.49
0.169
0.144
0.291
0.224
0.216
5.31
4.52
0.209
0.178
c1
D
R
3
4
S
5.51 BSC
0.217 BSC
D1
Notes
(1)
(2)
(3)
Dimensioning and tolerance per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
(5)
(6)
(7)
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC® outline TO-247 with exception of dimension c and Q
Revision: 20-Apr-17
Document Number: 95541
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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