VS-HFA70FA120 [VISHAY]

DIODE RECTIFIER DIODE, Rectifier Diode;
VS-HFA70FA120
型号: VS-HFA70FA120
厂家: VISHAY    VISHAY
描述:

DIODE RECTIFIER DIODE, Rectifier Diode

超快软恢复二极管 高压超快速软恢复二极管 局域网
文件: 总6页 (文件大小:150K)
中文:  中文翻译
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VS-HFA70FA120  
Vishay Semiconductors  
www.vishay.com  
HEXFRED®  
Ultrafast Soft Recovery Diode, 70 A  
FEATURES  
• Fast recovery time characteristic  
• Electrically isolated base plate  
• Large creepage distance between terminal  
• Simplified mechanical designs, rapid assembly  
• Designed and qualified for industrial level  
• UL approved file E78996  
SOT-227  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
DESCRIPTION / APPLICATIONS  
PRIMARY CHARACTERISTICS  
The dual diode series configuration (VS-HFA70FA120) is  
used for output rectification or freewheeling/clamping  
operation and high voltage application.  
VR  
1200 V  
2.3 V  
VF (typical)  
trr (typical)  
51 ns  
The semiconductor in the SOT-227 package is isolated from  
the copper base plate, allowing for common heatsinks and  
compact assemblies to be built.  
I
F(AV) per module at TC  
70 A at 94 °C  
SOT-227  
Package  
These modules are intended for general applications such  
as HV power supplies, electronic welders, motor control and  
inverters.  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
TC = 110 °C  
MAX.  
1200  
35  
UNITS  
Cathode to anode voltage  
V
Continuous forward current per leg  
Single pulse forward current per leg  
Maximum power dissipation per module  
RMS isolation voltage  
IF  
A
IFSM  
PD  
TJ = 25 °C  
380  
TC = 110 °C  
174  
W
V
VISOL  
Any terminal to case, t = 1 min  
2500  
Operating junction and storage  
temperature range  
TJ, TStg  
-55 to +150  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Cathode to anode   
breakdown voltage  
VBR  
IR = 100 μA  
1200  
-
-
IF = 30 A  
-
-
-
-
-
-
-
2.30  
2.89  
2.14  
2.82  
1.2  
3.00  
3.80  
2.44  
3.27  
75  
V
IF = 60 A  
Forward voltage  
VFM  
IF = 30 A, TJ = 125 °C  
IF = 60 A, TJ = 125 °C  
VR = VR rated  
μA  
Reverse leakage current  
IRM  
TJ = 125 °C, VR = VR rated  
TJ = 150 °C, VR = VR rated  
1.0  
-
mA  
2.7  
10  
Revision: 05-Jan-18  
Document Number: 94289  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-HFA70FA120  
Vishay Semiconductors  
www.vishay.com  
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
IF = 1 A; dIF/dt = 200 A/μs; VR = 30 V  
TJ = 25 °C  
MIN.  
TYP.  
MAX.  
UNITS  
-
-
-
-
-
-
-
-
51  
-
-
-
-
-
-
-
-
Reverse recovery time  
trr  
134  
204  
12  
ns  
TJ = 125 °C  
IF = 50 A  
TJ = 25 °C  
Peak recovery current  
IRRM  
dIF/dt = - 200 A/μs  
A
TJ = 125 °C  
18  
VR = 200 V  
TJ = 25 °C  
TJ = 125 °C  
VR = 1200 V  
790  
1770  
24  
Reverse recovery charge  
Junction capacitance  
Qrr  
CT  
nC  
pF  
THERMAL - MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
0.46  
0.23  
-
UNITS  
°C/W  
g
Junction to case, single leg conducting  
Junction to case, both legs conducting  
Case to heatsink  
-
-
-
-
-
-
-
-
RthJC  
RthCS  
Flat, greased surface  
0.10  
30  
-
Weight  
-
Torque to terminal  
Torque to heatsink  
1.1 (9.7) Nm (lbf.in)  
1.8 (15.9) Nm (lbf.in)  
Mounting torque  
Case style  
-
SOT-227  
1000  
10 000  
1000  
100  
10  
TJ = 150 °C  
TJ = 125 °C  
TJ = 150 °C  
100  
TJ = 125 °C  
TJ = 25 °C  
10  
1
1
TJ = 25 °C  
0.1  
0.01  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
0
200  
400  
600  
800  
1000  
1200  
VF - Forward Voltage Drop (V)  
Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg)  
VR - Reverse Voltage (V)  
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage  
Revision: 05-Jan-18  
Document Number: 94289  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-HFA70FA120  
Vishay Semiconductors  
www.vishay.com  
1000  
100  
10  
10  
100  
1000  
10 000  
VR - Reverse Voltage (V)  
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage  
1
0.1  
D = 0.75  
D = 0.50  
D = 0.33  
D = 0.25  
D = 0.20  
DC  
PDM  
t1  
0.01  
t2  
Notes:  
1. Duty factor D = t1/t2  
2. Peak TJ = PDM x ZthJC + TC  
.
Single pulse  
(thermal resistance)  
.
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
t1 - Rectangular Pulse Duration (s)  
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)  
175  
150  
125  
100  
75  
200  
150  
RMS Limit  
DC  
100  
50  
0
D = 0.20  
D = 0.25  
D = 0.33  
D = 0.50  
D = 0.75  
Square wave (d = 0.5)  
80 % rated VR applied  
50  
25  
DC  
30  
0
0
10 20 30 40 50 60 70 80 90  
0
10  
20  
40  
50  
60  
70  
IF - Average Forward Current (A)  
IF(AV) - Average Forward Current (A)  
Fig. 6 - Forward Power Losses Characteristics (Per Leg)  
Fig. 5 - Maximum Allowable Case Temperature  
vs. Average Forward Current (Per Leg)  
Revision: 05-Jan-18  
Document Number: 94289  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-HFA70FA120  
Vishay Semiconductors  
www.vishay.com  
250  
200  
150  
100  
50  
3000  
2500  
2000  
1500  
1000  
500  
VR = 200 V  
VR = 200 V  
IF = 50 A  
IF = 50 A  
IF = 30 A  
IF = 30 A  
125 °C  
125 °C  
25 °C  
25 °C  
0
0
100  
1000  
100  
1000  
dIF/dt (A/μs)  
dIF/dt (A/μs)  
Fig. 8 - Typical Stored Charge vs. dIF/dt  
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt  
35  
VR = 200 V  
IF = 50 A  
30  
25  
20  
15  
10  
5
IF = 30 A  
125 °C  
25 °C  
0
100  
1000  
dIF/dt (A/μs)  
Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt  
VR = 200 V  
0.01 Ω  
L = 70 μH  
D.U.T.  
D
dIF/dt  
adjust  
IRFP250  
G
S
Fig. 10 - Reverse Recovery Parameter Test Circuit  
Revision: 05-Jan-18  
Document Number: 94289  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-HFA70FA120  
Vishay Semiconductors  
www.vishay.com  
(3)  
trr  
IF  
ta  
tb  
0
(4)  
Qrr  
(2)  
IRRM  
0.5 IRRM  
(5)  
di(rec)M/dt  
0.75 IRRM  
diF/dt  
(1)  
(4) Qrr - area under curve defined by trr  
(1) diF/dt - rate of change of current  
and IRRM  
through zero crossing  
trr x IRRM  
(2) IRRM - peak reverse recovery current  
Qrr  
=
2
(3) trr - reverse recovery time measured  
from zero crossing point of negative  
going IF to point where a line passing  
through 0.75 IRRM and 0.50 IRRM  
extrapolated to zero current.  
(5) di(rec)M/dt - peak rate of change of  
current during tb portion of trr  
Fig. 11 - Reverse Recovery Waveform and Definitions  
ORDERING INFORMATION TABLE  
Device code  
VS- HF  
A
70  
F
A
120  
1
2
3
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Vishay Semiconductors product  
HEXFRED® family  
Process designator (A = electron irradiated)  
Current rating (70 = 70 A)  
Circuit configuration (two separate diodes, parallel pin-out)  
Package indicator (SOT-227 standard insulated base)  
Voltage rating (120 = 1200 V)  
CIRCUIT CONFIGURATION  
CIRCUIT  
CONFIGURATION CODE  
CIRCUIT  
CIRCUIT DRAWING  
Lead Assignment  
4
3
2
4
1
3
2
Two separate diodes,  
parallel pin-out  
F
1
LINKS TO RELATED DOCUMENTS  
Dimensions  
www.vishay.com/doc?95423  
www.vishay.com/doc?95425  
Packaging information  
Revision: 05-Jan-18  
Document Number: 94289  
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of  
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding  
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a  
particular product with the properties described in the product specification is suitable for use in a particular application.  
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over  
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.  
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for  
such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document  
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED  
Revision: 08-Feb-17  
Document Number: 91000  
1

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