VS-HFA70FA120 [VISHAY]
DIODE RECTIFIER DIODE, Rectifier Diode;型号: | VS-HFA70FA120 |
厂家: | VISHAY |
描述: | DIODE RECTIFIER DIODE, Rectifier Diode 超快软恢复二极管 高压超快速软恢复二极管 局域网 |
文件: | 总6页 (文件大小:150K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VS-HFA70FA120
Vishay Semiconductors
www.vishay.com
HEXFRED®
Ultrafast Soft Recovery Diode, 70 A
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• Designed and qualified for industrial level
• UL approved file E78996
SOT-227
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRIMARY CHARACTERISTICS
The dual diode series configuration (VS-HFA70FA120) is
used for output rectification or freewheeling/clamping
operation and high voltage application.
VR
1200 V
2.3 V
VF (typical)
trr (typical)
51 ns
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
I
F(AV) per module at TC
70 A at 94 °C
SOT-227
Package
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VR
TEST CONDITIONS
TC = 110 °C
MAX.
1200
35
UNITS
Cathode to anode voltage
V
Continuous forward current per leg
Single pulse forward current per leg
Maximum power dissipation per module
RMS isolation voltage
IF
A
IFSM
PD
TJ = 25 °C
380
TC = 110 °C
174
W
V
VISOL
Any terminal to case, t = 1 min
2500
Operating junction and storage
temperature range
TJ, TStg
-55 to +150
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
VBR
IR = 100 μA
1200
-
-
IF = 30 A
-
-
-
-
-
-
-
2.30
2.89
2.14
2.82
1.2
3.00
3.80
2.44
3.27
75
V
IF = 60 A
Forward voltage
VFM
IF = 30 A, TJ = 125 °C
IF = 60 A, TJ = 125 °C
VR = VR rated
μA
Reverse leakage current
IRM
TJ = 125 °C, VR = VR rated
TJ = 150 °C, VR = VR rated
1.0
-
mA
2.7
10
Revision: 05-Jan-18
Document Number: 94289
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA70FA120
Vishay Semiconductors
www.vishay.com
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A; dIF/dt = 200 A/μs; VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
-
51
-
-
-
-
-
-
-
-
Reverse recovery time
trr
134
204
12
ns
TJ = 125 °C
IF = 50 A
TJ = 25 °C
Peak recovery current
IRRM
dIF/dt = - 200 A/μs
A
TJ = 125 °C
18
VR = 200 V
TJ = 25 °C
TJ = 125 °C
VR = 1200 V
790
1770
24
Reverse recovery charge
Junction capacitance
Qrr
CT
nC
pF
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
0.46
0.23
-
UNITS
°C/W
g
Junction to case, single leg conducting
Junction to case, both legs conducting
Case to heatsink
-
-
-
-
-
-
-
-
RthJC
RthCS
Flat, greased surface
0.10
30
-
Weight
-
Torque to terminal
Torque to heatsink
1.1 (9.7) Nm (lbf.in)
1.8 (15.9) Nm (lbf.in)
Mounting torque
Case style
-
SOT-227
1000
10 000
1000
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 150 °C
100
TJ = 125 °C
TJ = 25 °C
10
1
1
TJ = 25 °C
0.1
0.01
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
200
400
600
800
1000
1200
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg)
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 05-Jan-18
Document Number: 94289
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA70FA120
Vishay Semiconductors
www.vishay.com
1000
100
10
10
100
1000
10 000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
DC
PDM
t1
0.01
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
.
Single pulse
(thermal resistance)
.
0.001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
175
150
125
100
75
200
150
RMS Limit
DC
100
50
0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Square wave (d = 0.5)
80 % rated VR applied
50
25
DC
30
0
0
10 20 30 40 50 60 70 80 90
0
10
20
40
50
60
70
IF - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Losses Characteristics (Per Leg)
Fig. 5 - Maximum Allowable Case Temperature
vs. Average Forward Current (Per Leg)
Revision: 05-Jan-18
Document Number: 94289
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA70FA120
Vishay Semiconductors
www.vishay.com
250
200
150
100
50
3000
2500
2000
1500
1000
500
VR = 200 V
VR = 200 V
IF = 50 A
IF = 50 A
IF = 30 A
IF = 30 A
125 °C
125 °C
25 °C
25 °C
0
0
100
1000
100
1000
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
35
VR = 200 V
IF = 50 A
30
25
20
15
10
5
IF = 30 A
125 °C
25 °C
0
100
1000
dIF/dt (A/μs)
Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
Revision: 05-Jan-18
Document Number: 94289
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA70FA120
Vishay Semiconductors
www.vishay.com
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
di(rec)M/dt
0.75 IRRM
diF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) diF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 11 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS- HF
A
70
F
A
120
1
2
3
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Vishay Semiconductors product
HEXFRED® family
Process designator (A = electron irradiated)
Current rating (70 = 70 A)
Circuit configuration (two separate diodes, parallel pin-out)
Package indicator (SOT-227 standard insulated base)
Voltage rating (120 = 1200 V)
CIRCUIT CONFIGURATION
CIRCUIT
CONFIGURATION CODE
CIRCUIT
CIRCUIT DRAWING
Lead Assignment
4
3
2
4
1
3
2
Two separate diodes,
parallel pin-out
F
1
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95423
www.vishay.com/doc?95425
Packaging information
Revision: 05-Jan-18
Document Number: 94289
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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