VS-MBR20100CT-1-M3 [VISHAY]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-262AA,;
| 型号： | VS-MBR20100CT-1-M3 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-262AA, 二极管 |
| 文件： | 总10页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-MBRB20...CT-M3, VS-MBR20...CT-1-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 10 A
FEATURES
TO 263AB (D2PAK)
TO-262AA
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• Center tap D2PAK and TO-262 packages
Base
common
cathode
Base
common
cathode
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
2
2
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Designed and qualified according to JEDEC®-JESD 47
2
2
1
1
3
3
Common
cathode
Common
cathode
Anode
Anode
Anode
Anode
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
VS-MBR20..CT-1-M3
VS-MBRB20..CT-M3
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
IF(AV)
2 x 10 A
80 V, 90 V, 100 V
0.70 V
VR
VF at IF
IRM max.
TJ max.
EAS
6 mA at 125 °C
150 °C
7 mJ
Package
Diode variation
TO-263AB (D2PAK), TO-262AA
Common cathode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
IFRM
CHARACTERISTICS
Rectangular waveform (per device)
TC = 133 °C (per leg)
VALUES
20
UNITS
A
20
VRRM
IFSM
80 to 100
850
V
A
tp = 5 μs sine
10 Apk, TJ = 125 °C
Range
VF
0.70
V
TJ
-65 to +150
°C
VOLTAGE RATINGS
VS-MBRB2080CT-M3 VS-MBRB2090CT-M3 VS-MBRB20100CT-M3
VS-MBR2080CT-1-M3 VS-MBR2090CT-1-M3 VS-MBR20100CT-1-M3
PARAMETER
SYMBOL
UNITS
Maximum DC reverse voltage
VR
80
90
100
V
Maximum working peak reverse voltage
VRWM
Revision: 15-Aug-15
Document Number: 94950
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
TC = 133 °C, rated VR
Rated VR, square wave, 20 kHz, TC = 133 °C
VALUES
UNITS
per leg
10
20
20
Maximum average
forward current
IF(AV)
IFRM
per device
Peak repetitive forward current per leg
5 μs sine or
3 μs rect. pulse
Following any rated load ondition
and with rated VRRM applied
A
850
150
Non-repetitive peak surge current
IFSM
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
Peak repetitive reverse surge current
Non-repetitive avalanche energy per leg
IRRM
EAS
2.0 μs, 1.0 kHz
0.5
24
TJ = 25 °C, IAS = 2 A, L = 12 mH
mJ
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
10 A
0.80
0.95
0.70
0.85
0.10
6
TJ = 25 °C
20 A
(1)
Maximum forward voltage drop
VFM
V
10 A
TJ = 125 °C
20 A
TJ = 25 °C
Maximum instantaneous
reverse current
(1)
IRM
Rated DC voltage
TJ = 125 °C
mA
Threshold voltage
VF(TO)
rt
0.433
15.8
400
V
TJ = TJ maximum
Forward slope resistance
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
m
pF
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured from top of terminal to mounting plane
Rated VR
LS
8.0
nH
dV/dt
10 000
V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
- 65 to 150
- 65 to 175
UNITS
Maximum junction temperature range
Maximum storage temperature range
TJ
°C
TStg
Maximum thermal resistance,
junction to case per leg
RthJC
RthCS
RthJA
DC operation
2.0
0.50
50
Typical thermal resistance,
case to heatsink
Mounting surface, smooth and greased
DC operation
°C/W
Maximum thermal resistance,
junction to ambient
2
g
Approximate weight
0.07
oz.
minimum
Mounting torque
6 (5)
kgf · cm
(lbf · in)
Non-lubricated threads
Case style TO-263AB (D2PAK)
Case style TO-262AA
maximum
12 (10)
MBRB2080CT
MBRB2090CT
MBRB20100CT
Marking device
MBR2080CT-1
MBR2090CT-1
MBR20100CT-1
Revision: 15-Aug-15
Document Number: 94950
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBRB20...CT-M3, VS-MBR20...CT-1-M3
www.vishay.com
Vishay Semiconductors
100
100
10
1
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
10
0.1
0.01
0.001
0.0001
TJ = 25 °C
1
0
20
40
60
80
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VR - Reverse Voltage (V)
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
1000
TJ = 25 °C
100
10
0
20
40
60
80
100
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
1
PDM
t1
t2
0.1
0.01
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
Single pulse
(thermal resistance)
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 15-Aug-15
Document Number: 94950
3
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBRB20...CT-M3, VS-MBR20...CT-1-M3
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Vishay Semiconductors
150
140
130
120
110
100
10
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
8
DC
RMS limit
6
4
2
0
Square wave (D = 0.50)
Rated VR applied
DC
6
See note (1)
2
4
6
8
10
12
14
16
0
2
4
8
10
12
14 16
0
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
Revision: 15-Aug-15
Document Number: 94950
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBRB20...CT-M3, VS-MBR20...CT-1-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- MBR
B
20 100 CT
-1
L
-M3
1
2
3
4
5
6
7
8
9
1
2
3
-
-
-
Vishay Semiconductors product
Essential part number
B = D2PAK
None = TO-262
7
None
= -1
7
4
-
-
-
-
Current rating (20 = 20 A)
Voltage ratings
80 = 80 V
90 = 90 V
100 = 100 V
5
6
7
CT = essential part number
None = D2PAK
3
3
= B
-1 = TO-262
None
8
9
-
-
None = tube (50 pieces)
L = tape and reel (left oriented - for D2PAK only)
R = tape and reel (right oriented - for D2PAK only)
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
VS-MBRB2080CT-M3
VS-MBRB2080CTR-M3
VS-MBRB2080CTL-M3
VS-MBR2080CT-1-M3
VS-MBRB2090CT-M3
VS-MBRB2090CTR-M3
VS-MBRB2090CTL-M3
VS-MBR2090CT-1-M3
VS-MBRB20100CT-M3
VS-MBRB20100CTR-M3
VS-MBRB20100CTL-M3
VS-MBR20100CT-1-M3
50
800
800
50
1000
800
800
13" diameter reel
1000
1000
800
Antistatic plastic tubes
Antistatic plastic tubes
13" diameter reel
50
800
800
50
800
13" diameter reel
1000
1000
800
Antistatic plastic tubes
Antistatic plastic tubes
13" diameter reel
50
800
800
50
800
13" diameter reel
1000
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
TO-263AB (D2PAK)
www.vishay.com/doc?95046
Dimensions
TO-262AA
www.vishay.com/doc?95419
www.vishay.com/doc?95444
www.vishay.com/doc?95443
www.vishay.com/doc?95032
Part marking information
Part marking information
Packaging information
TO-263AB (D2PAK)
TO-262AA
Revision: 15-Aug-15
Document Number: 94950
5
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2PAK (SMD-220)
B
A
Pad layout
A
(2)(3)
E
A
(E)
c2
11.00
MIN.
(0.43)
(3)
D
L1
4
2
9.65
MIN.
(0.38)
(D1) (3)
Detail A
17.90 (0.70)
15.00 (0.625)
H
(2)
1
3
3.81
MIN.
L2
(0.15)
B
B
2.32
MIN.
(0.08)
A
B
2.64 (0.103)
2.41 (0.096)
(3)
E1
2 x b2
2 x b
C
c
View A - A
0.004 M
Base
Metal
0.010 M
M
B
A
Plating
(4)
b1, b3
2 x
e
H
Gauge
plane
(4)
c1
(c)
B
0° to 8°
Seating
plane
L3
A1
Lead tip
(b, b2)
L
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
MILLIMETERS
INCHES
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
MAX.
4.83
0.254
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
MIN.
6.86
9.65
7.90
MAX.
8.00
MIN.
MAX.
0.315
0.420
0.346
A
A1
b
D1
E
0.270
0.380
0.311
3
2, 3
3
10.67
8.80
E1
e
b1
b2
b3
c
4
4
4
2
2.54 BSC
0.100 BSC
H
14.61
1.78
-
15.88
2.79
1.65
1.78
0.575
0.070
-
0.625
0.110
0.066
0.070
L
L1
L2
L3
L4
3
c1
c2
D
1.27
0.050
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-262
DIMENSIONS in millimeters and inches
Modified JEDEC outline TO-262
(2) (3)
E
A
(Datum A)
B
A
c2
E
A
(3)
L1
D
Seating
plane
D1(3)
1
2
3
C
C
L2
B
B
L (2)
A
c
(3)
E1
3 x b2
3 x b
A1
Section A - A
2 x e
Base
metal
(4)
b1, b3
Plating
c
M
M
B
0.010
A
Lead assignments
c1
(4)
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
(b, b2)
Lead tip
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
SYMBOL
NOTES
MIN.
4.06
2.03
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
6.86
9.65
7.90
MAX.
4.83
3.02
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
8.00
10.67
8.80
MIN.
0.160
0.080
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
0.270
0.380
0.311
MAX.
0.190
0.119
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
0.315
0.420
0.346
A
A1
b
b1
b2
b3
c
4
4
4
c1
c2
D
2
3
D1
E
2, 3
3
E1
e
2.54 BSC
0.100 BSC
L
13.46
-
14.10
1.65
3.71
0.530
-
0.555
0.065
0.146
L1
L2
3
3.56
0.140
Notes
(1)
(4)
(5)
(6)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
Dimension b1 and c1 apply to base metal only
Controlling dimension: inches
Outline conform to JEDEC TO-262 except A1 (maximum), b
(minimum) and D1 (minimum) where dimensions derived the
actual package outline
(2)
(3)
Thermal pad contour optional within dimension E, L1, D1 and E1
Document Number: 95419
Revision: 04-Oct-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Part Marking Information
www.vishay.com
Vishay Semiconductors
TO-262
Example: This is a xxxxxxx-1 (1) with
assembly lot code AC,
Part number
xxxxxxx-1 (1)
assembled on WW 19, 2001
in the assembly line ”X”
V
ZYWWX
C
A
Product version (optional):
Z (replaced according below table)
Date code:
Assembly
lot code
Year 1 = 2001
Week 19
Line X
Note
(1)
If part number contain “H” as last digit, product is AEC-Q101 qualified
ENVIRONMENTAL NAMING CODE (Z)
PRODUCT DEFINITION
Termination lead (Pb)-free
A
B
E
F
Totally lead (Pb)-free
RoHS-compliant and termination lead (Pb)-free
RoHS-compliant and totally lead (Pb)-free
M
N
G
Halogen-free, RoHS-compliant and termination lead (Pb)-free
Halogen-free, RoHS-compliant and totally lead (Pb)-free
Green
Revision: 21-Jun-17
Document Number: 95443
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Part Marking Information
www.vishay.com
Vishay Semiconductors
D2PAK
Example: This is a xxxxxx (1) with
assembly lot code AC,
Part number
xxxxxx (1)
assembled on WW 02, 2010
V
ZYWWX
C
Product version (optional):
Z (replaced according below table)
Date code:
A
Assembly
lot code
Year 0 = 2010
Week 02
Line X
Note
(1)
If part number contain “H” as last digit, product is AEC-Q101 qualified
ENVIRONMENTAL NAMING CODE (Z)
PRODUCT DEFINITION
Termination lead (Pb)-free
A
B
E
F
Totally lead (Pb)-free
RoHS-compliant and termination lead (Pb)-free
RoHS-compliant and totally lead (Pb)-free
M
N
G
Halogen-free, RoHS-compliant, and termination lead (Pb)-free
Halogen-free, RoHS-compliant, and totally lead (Pb)-free
Green
Revision: 21-Jun-17
Document Number: 95444
1
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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VISHAY
VS-MBR20100CTPBF
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
VISHAY
VS-MBR2035CT-1-M3
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 35V V(RRM), Silicon, TO-262AA,
VISHAY
VS-MBR2035CT-1PBF
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 35V V(RRM), Silicon, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN
VISHAY
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