VS-MBR4045CT-1HM3 [VISHAY]
Low forward voltage drop;
| 型号： | VS-MBR4045CT-1HM3 |
| 厂家： | 
VISHAY |
| 描述： | Low forward voltage drop |
| 文件： | 总8页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-MBRB4045CTHM3, VS-MBR4045CT-1HM3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 20 A
FEATURES
VS-MBR4045CT-1HM3
VS-MBRB4045CTHM3
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Base
common
cathode
Base
common
cathode
• Guard ring for enhanced ruggedness and long
term reliability
2
2
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
2
2
• AEC-Q101 qualified, meets JESD 201 class 1A whisker
test
1
1
3
3
Common
cathode
Common
cathode
Anode
Anode
Anode
Anode
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
D2PAK
TO-262
PRODUCT SUMMARY
DESCRIPTION
Package
TO-263AB (D2PAK), TO-262AA
The center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
IF(AV)
2 x 20 A
45 V
VR
VF at IF
0.58 V
I
RM max.
95 mA at 125 °C
150 °C
TJ max.
Diode variation
EAS
Common cathode
20 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
IFRM
VRRM
IFSM
CHARACTERISTICS
Rectangular waveform (per device)
TC = 117 °C (per leg)
VALUES
40
UNITS
A
40
45
V
A
tp = 5 μs sine
20 Apk, TJ = 125 °C
Range
900
VF
0.58
V
TJ
-65 to 150
°C
VOLTAGE RATINGS
PARAMETER
VS-MBRB4045CTHM3
VS-MBR4045CT-1HM3
SYMBOL
UNITS
Maximum DC reverse voltage
VR
45
V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
per leg
20
40
Maximum average
IF(AV)
IFRM
TC = 118 °C, rated VR
Rated VR, square wave, 20 kHz, TC = 117 °C
forward current
per device
Peak repetitive forward current per leg
40
A
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
TJ = 25 °C, IAS = 3 A, L = 4.4 mH
Following any rated
load condition and with
rated VRRM applied
900
Maximum peak one cycle non-repetitive
peak surge current per leg
IFSM
210
20
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
EAS
IAR
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
3
Revision: 06-Mar-14
Document Number: 94721
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBRB4045CTHM3, VS-MBR4045CT-1HM3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
0.60
0.80
0.58
0.80
1
UNITS
20 A
TJ = 25 °C
40 A
(1)
Maximum forward voltage drop
VFM
V
20 A
TJ = 125 °C
40 A
TJ = 25 °C
TJ = 100 °C
TJ = 125 °C
Maximum instantaneous
reverse current
(1)
IRM
Rated DC voltage
50
mA
95
Maximum junction capacitance
Typical series inductance
CT
LS
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured from top of terminal to mounting plane
Rated VR
900
pF
nH
8.0
Maximum voltage rate of change
dV/dt
10 000
V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
-65 to 150
-65 to 175
UNITS
Maximum junction temperature range
Maximum storage temperature range
TJ
°C
TStg
Maximum thermal resistance,
junction to case per leg
RthJC
RthCS
RthJA
DC operation
1.5
0.50
50
Typical thermal resistance,
case to heatsink
Mounting surface, smooth and greased
(Only for TO-220)
°C/W
Maximum thermal resistance,
junction to ambient
DC operation
(For D2PAK and TO-262)
2
g
Approximate weight
0.07
oz.
minimum
Mounting torque
6 (5)
kgf · cm
(lbf · in)
Non-lubricated threads
maximum
12 (10)
Case style D2PAK
Case style TO-262
MBRB4045CTH
Marking device
MBR4045CT-1H
Revision: 06-Mar-14
Document Number: 94721
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBRB4045CTHM3, VS-MBR4045CT-1HM3
www.vishay.com
Vishay Semiconductors
1000
100
10
1000
TJ = 150 °C
100
TJ = 175 °C
TJ = 125 °C
10
TJ = 100 °C
1
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
0.1
0.01
TJ = 125 °C
TJ = 25 °C
0.001
1
40
0
5
10 15 20 25 30 35
45
0
0.5
1.0
1.5
2.0
2.5
VR - Reverse Voltage (V)
VF - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
900
800
700
600
500
400
300
200
TJ = 25 °C
0
10
20
40
50
30
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
1
0.1
PDM
t1
t2
D = 0.75
Single pulse
(thermal resistance)
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 06-Mar-14
Document Number: 94721
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBRB4045CTHM3, VS-MBR4045CT-1HM3
www.vishay.com
Vishay Semiconductors
160
150
140
130
120
110
100
90
20
RMS limit
15
DC
10
5
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
Square wave (D = 0.50)
80 % rated VR applied
See note (1)
80
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
Revision: 06-Mar-14
Document Number: 94721
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBRB4045CTHM3, VS-MBR4045CT-1HM3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- MBR
B
40
45
CT
-1
RL
H
M3
1
2
3
4
5
6
7
8
9
10
1
2
3
-
-
-
Vishay Semiconductors product
Essential part number
B = D2PAK
None = TO-262
7
None
= -1
7
4
-
-
-
-
Current rating (40 = 40 A)
Voltage rating (45 = 45 V)
CT = Essential part number
5
6
7
None = D2PAK
3
3
= B
-1 = TO-262
None
8
-
None = Tube
L = Tape and reel (left oriented - for D2PAK only)
R = Tape and reel (right oriented - for D2PAK only)
H = AEC-Q101 qualified
9
-
-
Environmental digit:
10
M3 = Halogen-free, RoHS-compliant and termination lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
13" diameter reel
VS-MBRB4045CTHM3
VS-MBR4045CT-1HM3
VS-MBRB4045CTLHM3
VS-MBRB4045CTRHM3
50
50
1000
1000
800
800
800
800
13" diameter reel
LINKS TO RELATED DOCUMENTS
TO-263AB (D2PAK)
www.vishay.com/doc?95046
Dimensions
TO-262AA
www.vishay.com/doc?95419
www.vishay.com/doc?95444
www.vishay.com/doc?95443
www.vishay.com/doc?95032
TO-263AB (D2PAK)
TO-262AA
Part marking information
Packaging information
TO-263AB (D2PAK)
Revision: 06-Mar-14
Document Number: 94721
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2PAK (SMD-220)
B
A
Pad layout
A
(2)(3)
E
A
(E)
c2
11.00
MIN.
(0.43)
(3)
D
L1
4
2
9.65
MIN.
(0.38)
(D1) (3)
Detail A
17.90 (0.70)
15.00 (0.625)
H
(2)
1
3
3.81
MIN.
L2
(0.15)
B
B
2.32
MIN.
(0.08)
A
B
2.64 (0.103)
2.41 (0.096)
(3)
E1
2 x b2
2 x b
C
c
View A - A
0.004 M
Base
Metal
0.010 M
M
B
A
Plating
(4)
b1, b3
2 x
e
H
Gauge
plane
(4)
c1
(c)
B
0° to 8°
Seating
plane
L3
A1
Lead tip
(b, b2)
L
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
MILLIMETERS
INCHES
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
MAX.
4.83
0.254
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
MIN.
6.86
9.65
7.90
MAX.
8.00
MIN.
MAX.
0.315
0.420
0.346
A
A1
b
D1
E
0.270
0.380
0.311
3
2, 3
3
10.67
8.80
E1
e
b1
b2
b3
c
4
4
4
2
2.54 BSC
0.100 BSC
H
14.61
1.78
-
15.88
2.79
1.65
1.78
0.575
0.070
-
0.625
0.110
0.066
0.070
L
L1
L2
L3
L4
3
c1
c2
D
1.27
0.050
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-262
DIMENSIONS in millimeters and inches
Modified JEDEC outline TO-262
(2) (3)
E
A
(Datum A)
B
A
c2
E
A
(3)
L1
D
Seating
plane
D1(3)
1
2
3
C
C
L2
B
B
L (2)
A
c
(3)
E1
3 x b2
3 x b
A1
Section A - A
2 x e
Base
metal
(4)
b1, b3
Plating
c
M
M
B
0.010
A
Lead assignments
c1
(4)
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
(b, b2)
Lead tip
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
SYMBOL
NOTES
MIN.
4.06
2.03
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
6.86
9.65
7.90
MAX.
4.83
3.02
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
8.00
10.67
8.80
MIN.
0.160
0.080
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
0.270
0.380
0.311
MAX.
0.190
0.119
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
0.315
0.420
0.346
A
A1
b
b1
b2
b3
c
4
4
4
c1
c2
D
2
3
D1
E
2, 3
3
E1
e
2.54 BSC
0.100 BSC
L
13.46
-
14.10
1.65
3.71
0.530
-
0.555
0.065
0.146
L1
L2
3
3.56
0.140
Notes
(1)
(4)
(5)
(6)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
Dimension b1 and c1 apply to base metal only
Controlling dimension: inches
Outline conform to JEDEC TO-262 except A1 (maximum), b
(minimum) and D1 (minimum) where dimensions derived the
actual package outline
(2)
(3)
Thermal pad contour optional within dimension E, L1, D1 and E1
Document Number: 95419
Revision: 04-Oct-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
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Revision: 13-Jun-16
Document Number: 91000
1
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