VS-MBRS1100TRPBF [VISHAY]
Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, SMB, 2 PIN;
| 型号： | VS-MBRS1100TRPBF |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, SMB, 2 PIN 光电二极管 |
| 文件： | 总7页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-MBRS190TRPbF, VS-MBRS1100TRPbF
Vishay Semiconductors
Schottky Rectifier, 1.0 A
FEATURES
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
Cathode
Anode
SMB
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
PRODUCT SUMMARY
DESCRIPTION
Package
DO-214AA (SMB)
1 A
The VS-MBRS190TRPbF, VS-MBRS1100TRPbF surface
mount Schottky rectifier has been designed for applications
requiring low forward drop and very small foot prints on PC
boards. Typical applications are in disk drives, switching
power supplies, converters, freewheeling diodes, battery
charging, and reverse battery protection.
IF(AV)
VR
90 V, 100 V
0.78 V
VF at IF
IRM
1 mA at 125 °C
175 °C
TJ max.
Diode variation
Single die
EAS
1.0 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
1.0
UNITS
Rectangular waveform
A
V
90/100
870
tp = 5 μs sine
1.0 Apk, TJ = 125 °C
Range
A
VF
0.63
V
TJ
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VR
VS-MBRS190TRPbF VS-MBRS1100TRPbF
UNITS
Maximum DC reverse voltage
90
100
V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum average forward current
IF(AV)
50 % duty cycle at TL = 147 °C, rectangular waveform
1.0
Following any rated load
condition and with rated
RRM applied
5 μs sine or 3 μs rect. pulse
870
A
Maximum peak one cycle
non-repetitive surge current
IFSM
10 ms sine or 6 ms rect. pulse
TJ = 25 °C, IAS = 0.5 A, L = 8 mH
50
V
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
1.0
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.5
Document Number: 94315
Revision: 05-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VS-MBRS190TRPbF, VS-MBRS1100TRPbF
Schottky Rectifier, 1.0 A
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
TJ = 25 °C
VALUES
0.78
0.62
0.5
UNITS
Maximum forward voltage drop
See fig. 1
(1)
VFM
1 A
V
TJ = 125 °C
TJ = 25 °C
Maximum reverse leakage current
See fig. 2
(1)
IRM
V
R = Rated VR
mA
TJ = 125 °C
1.0
Typical junction capacitance
Typical series inductance
CT
LS
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
42
pF
nH
2.0
Maximum voltage rate of change
dV/dt
10 000
V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ (1), TStg
- 55 to 175
°C
Maximum thermal resistance,
junction to lead
DC operation
See fig. 4
(2)
RthJL
36
80
°C/W
Maximum thermal resistance,
junction to ambient
RthJA
DC operation
0.10
g
Approximate weight
0.003
oz.
Marking device
Case style SMB (similar to DO-214AA)
V19/V10
Notes
dPtot
1
(1)
------------- < -------------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
(2)
Mounted 1" square PCB
www.vishay.com
2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94315
Revision: 05-Jul-10
VS-MBRS190TRPbF, VS-MBRS1100TRPbF
Schottky Rectifier, 1.0 A
Vishay Semiconductors
10
10
TJ = 175 °C
1
0.1
TJ = 150 °C
TJ = 100 °C
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 75 °C
1
0.01
TJ = 50 °C
0.001
0.0001
0.00001
TJ = 25 °C
0.1
0.2
0.4
0.6
0.8
1.0
0
20
40
60
80
100
VR - Reverse Voltage (V)
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
100
TJ = 25 °C
10
0
20
40
60
80
100
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
100
10
PDM
t1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t2
1
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
Single pulse
(thermal resistance)
.
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Document Number: 94315
Revision: 05-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VS-MBRS190TRPbF, VS-MBRS1100TRPbF
Schottky Rectifier, 1.0 A
Vishay Semiconductors
180
170
160
150
140
130
120
110
1.0
0.8
0.6
0.4
0.2
0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
RMS limit
DC
Square wave (D = 0.50)
Rated VR applied
See note (1)
0
0.4
0.8
1.2
1.6
0
0.3
0.6
0.9
1.2
1.5
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 6 - Maximum Average Forward Dissipation vs.
Average Forward Current
1000
100
At any rated load condition
and with rated VRRM applied
following surge
10
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94315
Revision: 05-Jul-10
VS-MBRS190TRPbF, VS-MBRS1100TRPbF
Schottky Rectifier, 1.0 A
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- MBR
S
1
100 TR PbF
1
2
3
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Vishay Semiconductors product suffix
Schottky MBR series
S = SMB
Current rating (1 = 1 A)
90 = 90 V
100 = 100 V
Voltage rating
TR = Tape and reel (3000 pieces)
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95017
www.vishay.com/doc?95029
www.vishay.com/doc?95034
Part marking information
Packaging information
Document Number: 94315
Revision: 05-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
Outline Dimensions
Vishay High Power Products
SMB
DIMENSIONS in millimeters (inches)
1
2
2.15 (0.085)
1.80 (0.071)
3.80 (0.150)
3.30 (0.130)
Polarity
2 Part Number
1
4.70 (0.185)
4.10 (0.161)
2.5 TYP.
(0.098 TYP.)
Soldering pad
2.40 (0.094)
1.90 (0.075)
0.30 (0.012)
0.15 (0.006)
1.30 (0.051)
0.76 (0.030)
2.0 TYP.
(0.079 TYP.)
5.60 (0.220)
5.00 (0.197)
4.2 (0.165)
4.0 (0.157)
Document Number: 95017
Revision: 25-Jun-07
For technical questions concerning discrete products, contact: diodes-tech@vishay.com
For technical questions concerning module products, contact: ind-modules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
相关型号：
VS-MBRS120TRPBF
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, SIMILAR TO DO-214AA, SMB, 2 PIN
VISHAY
VS-MBRS130-M3/5BT
Rectifier Diode, Schottky, 1 Element, 30V V(RRM), Silicon, SMB, SIMILAR TO DO-214AA, 2 PIN
VISHAY
VS-MBRS130LTRPBF
Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, SIMILAR TO DO-214AA, SMB, 2 PIN
VISHAY
VS-MBRS140-M3/5BT
Rectifier Diode, Schottky, 1 Element, 40V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, SIMILAR TO DO-214AA, SMB, 2 PIN
VISHAY
VS-MBRS140TRPBF
Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, SIMILAR TO DO-214AA, SMB, 2 PIN
VISHAY
VS-MBRS190-M3/5BT
Rectifier Diode, Schottky, 1 Element, 90V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMB, SIMILAR TO DO-214AA, 2 PIN
VISHAY
VS-MBRS190TRPBF
Rectifier Diode, Schottky, 1 Element, 1A, 90V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, SMB, 2 PIN
VISHAY
VS-MBRS340TRPBF
Rectifier Diode, Schottky, 1 Phase, 1 Element, 4A, 40V V(RRM), Silicon, ROHS COMPLIANT, SIMILAR TO DO-214AB, SMC, 2 PIN
VISHAY
VS-MBRS360-M3/9AT
Rectifier Diode, Schottky, 1 Phase, 1 Element, 60V V(RRM), Silicon, DO-214AB, HALOGEN FREE AND ROHS COMPLIANT, SMC, 2 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明