VS-MURD620CM3 [VISHAY]
Ultrafast Rectifier, 2 x 3 A FRED Pt®;
| 型号： | VS-MURD620CM3 |
| 厂家： | 
VISHAY |
| 描述： | Ultrafast Rectifier, 2 x 3 A FRED Pt® |
| 文件： | 总8页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-MURD620CTHM3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 2 x 3 A FRED Pt®
FEATURES
Base
common
cathode
• Ultrafast recovery time
4
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• AEC-Q101 qualified
2
Common
cathode
• Meets JESD 201 class 2 whisker test
DPAK (TO-252AA)
1
3
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
Anode
Anode
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
DESCRIPTION / APPLICATIONS
IF(AV)
2 x 3 A
200 V
0.9 V
VS-MURD620CTHM3 is the state of the art ultrafast
recovery rectifier specifically designed with optimized
performance of forward voltage drop and ultrafast recovery
time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
VR
VF at IF
t
rr typ.
See Recovery table
175 °C
TJ max.
Package
DPAK (TO-252AA)
Common cathode
Circuit configuration
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VRRM
IF(AV)
TEST CONDITIONS
MAX.
UNITS
Peak repetitive reverse voltage
200
V
Average rectified forward current per device
Non-repetitive peak surge current
Peak repetitive forward current per diode
Operating junction and storage temperatures
Total device, rated VR, TC = 146 °C
Rated VR, square wave, 20 kHz, TC = 146 °C
6
IFSM
50
6
A
IFM
TJ, TStg
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
IF = 3 A
200
-
-
-
-
-
-
-
-
-
-
0.9
0.78
1
1.0
0.96
1.2
1.13
5
V
IF = 3 A, TJ = 125 °C
IF = 6 A
Forward voltage
VF
IF = 6 A, TJ = 125 °C
VR = VR rated
0.89
-
Reverse leakage current
IR
μA
TJ = 125 °C, VR = VR rated
VR = 200 V
-
250
-
Junction capacitance
Series inductance
CT
LS
12
8.0
pF
nH
Measured lead to lead 5 mm from package body
-
Revision: 09-Dec-2019
Document Number: 94742
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MURD620CTHM3
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
20
35
-
Reverse recovery time
trr
19
ns
TJ = 125 °C
26
-
IF = 3 A
dIF/dt = 200 A/μs
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
3.1
4.6
30
-
Peak recovery current
IRRM
A
-
V
R = 160 V
-
Reverse recovery charge
Qrr
nC
60
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction and
storage temperature range
TJ, TStg
-65
-
175
°C
Thermal resistance,
junction to case per leg
RthJC
RthJA
RthCS
-
-
-
-
-
-
9.0
80
-
Thermal resistance,
junction to ambient per leg
°C/W
Thermal resistance,
case to heatsink
Mounting surface, flat, smooth, and
greased
-
-
0.3
-
-
g
Weight
0.01
oz.
6.0
(5.0)
12
(10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
-
Case style DPAK (TO-252AA)
MURD620CTH
Revision: 09-Dec-2019
Document Number: 94742
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MURD620CTHM3
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Vishay Semiconductors
100
10
1
100
10
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
1
TJ = 175 °C
TJ = 150 °C
TJ = 25 °C
0.1
TJ = 25 °C
0.01
0.001
0.1
0
50
100
150
200
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
100
TJ = 25 °C
10
1
10
100
1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
t1
D = 0.50
D = 0.20
D = 0.10
0.1
t2
Single pulse
(thermal resistance)
D = 0.05
D = 0.02
D = 0.01
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
.
.
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 09-Dec-2019
Document Number: 94742
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MURD620CTHM3
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Vishay Semiconductors
180
170
160
150
140
130
120
50
40
30
20
10
VR = 30 V
TJ = 125 °C
TJ = 25 °C
IF = 3 A
IF = 6 A
DC
Square wave (D = 0.50)
Rated VR applied
See note (1)
100
1000
0
1
2
3
4
5
dIF/dt (A/µs)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
4.5
140
VR = 30 V
TJ = 125 °C
TJ = 25 °C
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
120
100
80
60
40
20
0
IF = 6 A
IF = 3 A
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
0
1
2
3
4
5
100
1000
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
dIF/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
Revision: 09-Dec-2019
Document Number: 94742
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MURD620CTHM3
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
di(rec)M/dt
0.75 IRRM
diF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) diF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 09-Dec-2019
Document Number: 94742
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MURD620CTHM3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- MUR
D
6
20
CT TRL
H
M3
1
2
3
4
5
6
7
8
9
-
-
-
-
-
-
-
-
-
Vishay Semiconductors product
Ultrafast MUR series
D = DPAK
1
2
3
4
5
6
7
8
9
Current rating (6 = 6 A)
Voltage rating (20 = 200 V)
CT = center tap (dual)
Tape and reel suffix
TR = tape and reel
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
H = AEC-Q101 qualified
Environmental digit:
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tube
13" diameter reel
VS-MURD620CTHM3
VS-MURD620CTTRHM3
VS-MURD620CTTRLHM3
VS-MURD620CTTRRHM3
75
3000
2000
3000
3000
2000
3000
3000
13" diameter reel
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95519
Part marking information
Packaging information
www.vishay.com/doc?95518
www.vishay.com/doc?95033
Revision: 09-Dec-2019
Document Number: 94742
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
DPAK (TO-252AA)
DIMENSIONS in millimeters and inches
Pad layout
E
A
0.265 (6.74) min.
b3
L3
4
E1
c2
4
Seating
plane
D1
0.245 (6.23) min.
D
H
c
L4
1
3
3
1
2
0.488 (12.40)
0.409 (10.40)
2
L5
Detail “C”
0.089 (2.28) min.
b2
b
e
L1
e1
0.06 (1.524) min.
Detail “C”
Lead tip
Gauge plane
0.093 (2.38)
0.085 (2.18)
L2
A1
MILLIMETERS
INCHES
MILLIMETERS
INCHES
MIN. MAX.
0.090 BSC
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
2.18
-
MAX.
2.39
0.13
0.89
1.14
5.46
0.61
0.89
6.22
-
MIN.
MAX.
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
-
MIN.
MAX.
A
A1
b
0.086
-
e
2.29 BSC
H
9.40
1.40
10.41
1.78
0.370
0.055
0.410
0.070
0.64
0.76
4.95
0.46
0.46
5.97
5.21
6.35
4.32
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.250
0.170
L
b2
b3
c
L1
L2
L3
L4
L5
2.74 BSC
0.51 BSC
0.108 REF.
0.020 BSC
3
0.89
1.27
1.02
1.52
0.035
0.050
0.040
0.060
3
2
c2
D
-
-
5
3
5
3
1.14
0.045
D1
E
6.73
-
0.265
-
E1
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Lead dimension uncontrolled in L5
Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
Outline conforms to JEDEC® outline TO-252AA
(2)
(3)
(4)
(5)
Revision: 06-Jun-17
Document Number: 95519
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Revision: 01-Jan-2021
Document Number: 91000
1
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