VS-SD453N12S20PSC [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 400A, 1200V V(RRM), Silicon,;
| 型号： | VS-SD453N12S20PSC |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 400A, 1200V V(RRM), Silicon, 软恢复二极管 快速软恢复二极管 |
| 文件： | 总11页 (文件大小：396K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-SD453N/R Series
Vishay Semiconductors
www.vishay.com
Fast Recovery Diodes
(Stud Version), 400 A, 450 A
FEATURES
• High power fast recovery diode series
• 2.0 μs to 3.0 μs recovery time
• High voltage ratings up to 2500 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Compression bonded encapsulation
• Stud version case style B-8
B-8
• Maximum junction temperature 150 °C
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
IF(AV)
400 A, 450 A
B-8
Package
TYPICAL APPLICATIONS
• Snubber diode for GTO
Circuit configuration
Single diode
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
SD453N/R
UNITS
PARAMETER
TEST CONDITIONS
S20
400
S30
450
A
IF(AV)
IF(RMS)
IFSM
VRRM
trr
TC
70
70
°C
630
710
50 Hz
60 Hz
Range
9300
9600
A
9730
10 050
1200 to 2500
3.0
1200 to 2500
2.0
V
μs
TJ
25
25
°C
TJ
- 40 to 150
- 40 to 150
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VOLTAGE
CODE
TYPE NUMBER
PEAK REVERSE VOLTAGE
V
12
16
20
25
1200
1600
2000
2500
1300
1700
2100
2600
VS-SD453N/R
50
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Document Number: 93176
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FORWARD CONDUCTION
SD453N/R
UNITS
PARAMETER
SYMBOL
IF(AV)
TEST CONDITIONS
S20
400
70
S30
450
A
°C
A
Maximum average forward current
at case temperature
180° conduction, half sine wave
70
630
55
710
Maximum RMS forward current at
case temperature
IF(RMS)
52
°C
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
9300
9730
7820
8190
432
395
306
279
4320
9600
10 050
8070
8450
460
No voltage
reapplied
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
A
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ
maximum
No voltage
reapplied
420
Maximum I2t for fusing
I2t
kA2s
326
100 % VRRM
reapplied
297
Maximum I2t for fusing
I2t
VF(TO)1
VF(TO)2
rf1
t = 0.1 to 10 ms, no voltage reapplied
4600
kA2s
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ = TJ maximum
Low level value of threshold voltage
1.00
1.09
0.80
0.95
1.04
0.60
V
High level value of threshold voltage
(I > x IF(AV)), TJ = TJ maximum
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ = TJ maximum
Low level value of forward
slope resistance
mW
V
High level value of forward
slope resistance
rf2
(I > x IF(AV)), TJ = TJ maximum
0.74
2.20
0.54
1.85
Ipk = 1500 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave
Maximum forward voltage drop
VFM
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT TJ = 25 °C
TYPICAL VALUES
AT TJ = 150 °C
TEST CONDITIONS
IFM
Ipk
SQUARE
PULSE
(A)
CODE
trr
trr AT 25 % IRRM
(μs)
dI/dt
Vr
trr AT 25 % IRRM
Qrr
Irr
(A/μs)
(V)
(μs)
(μC)
(A)
t
dir
dt
Qrr
S20
S30
2.0
3.0
3.5
5.0
250
380
120
150
1000
50
- 50
IRM(REC)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating and storage
temperature range
TJ, TStg
- 40 to 150
°C
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
Mounting torque 10 %
RthJC
RthCS
DC operation
0.1
0.04
50
K/W
Mounting surface, smooth, flat and greased
Not-lubricated threads
Nm
g
Approximate weight
454
Case style
See dimensions (link at the end of datasheet)
B-8
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
120°
90°
0.010
0.014
0.017
0.025
0.042
0.008
0.014
0.019
0.026
0.042
TJ = TJ maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
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Document Number: 93176
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VS-SD453N/R Series
Vishay Semiconductors
www.vishay.com
150
140
130
120
110
100
90
150
140
130
120
110
100
90
SD 453 N/ R. . S20 Se r ie s
thJC
SD 453 N/ R. . S30 Se r ie s
thJC
R
(DC) = 0.1 K/ W
R
(DC) = 0.1 K/W
Conduction Angle
Conduction Period
80
30°
70
60°
80
90°
60
120°
70
90°
50
120°
60°
DC
600
180°
30°
180°
40
60
0
200
400
800
0
50 100 150 200 250 300 350 400 450
Average Forward Current (A)
Average Forward Current (A)
Fig. 4 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
150
800
SD 453 N/ R. . S20 Se rie s
thJC
140
130
120
110
100
90
R
(DC) = 0.1 K/W
700
600
500
400
300
200
100
0
180°
120°
90°
60°
30°
RM S Lim it
Conduction Period
80
Conduction Angle
70
90°
SD 453 N / R. . S20 Se rie s
60°
120°
T = 150°C
60
J
30°
180°
DC
50
0
50 100 150 200 250 300 350 400 450
Average Forward Current (A)
0
100 200 300 400 500 600 700
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
1000
150
SD 453 N / R. . S30 Se r ie s
thJC
DC
180°
120°
90°
60°
30°
900
800
700
600
500
400
300
200
100
0
R
(DC) = 0.1 K/W
140
130
120
110
100
90
Conduction Angle
RM S Lim it
Conduction Period
80
180°
SD 453N / R. . S20 Se r ie s
60°
70
90°
T = 150°C
30°
J
120°
60
0
100 200 300 400 500 600 700
Average Forward Current (A)
0
100
200
300
400
500
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - Forward Power Loss Characteristics
Revision: 21-Jan-14
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VS-SD453N/R Series
Vishay Semiconductors
www.vishay.com
800
700
600
500
400
300
200
100
0
10000
9000
8000
7000
6000
5000
4000
3000
2000
Maximum Non Repetitive Surge Current
VersusPulse Train Duration.
180°
120°
90°
Initial T = 150 °C
J
No Voltage Reapplied
Rated V
Reapplied
RRM
60°
RM S Lim it
30°
Conduction Angle
SD 453N / R. . S30 Se rie s
SD453N/ R..S20 Series
T = 15 0° C
J
0
100
200
300
400
500
0.01
0.1
Pulse Tra in Dura t ion (s)
1
Average Forward Current (A)
Fig. 7 - Forward Power Loss Characteristics
Fig. 10 - Maximum Non-Repetitive Surge Current
1000
9000
At Any Rated Load Condition And With
DC
180°
120°
90°
900
800
700
600
500
400
300
200
100
0
Rated V
Applied Following Surge.
RRM
8000
7000
6000
5000
4000
3000
2000
Initial T = 150 °C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
60°
30°
RMS Lim it
Conduction Period
SD 453 N / R. . S30 Se rie s
T = 150° C
SD 453 N / R. . S30 Se rie s
10
J
0
100 200 300 400 500 600 700 800
Average Forward Current (A)
1
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 8 - Forward Power Loss Characteristics
Fig. 11 - Maximum Non-Repetitive Surge Current
10000
9000
Maximum Non Repetitive Surge Current
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
VersusPulse Train Duration.
9000
8000
7000
6000
5000
4000
3000
2000
Initial T = 150 °C
Initial T = 150 °C
J
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
No Voltage Reapplied
8000
7000
6000
5000
4000
3000
2000
Rated V Reapplied
RRM
SD453N/ R..S20 Series
10
SD453N/ R..S30 Series
0.01
0.1
Pulse Train Duration (s)
Fig. 12 - Maximum Non-Repetitive Surge Current
1
1
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 9 - Maximum Non-Repetitive Surge Current
Revision: 21-Jan-14
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Vishay Semiconductors
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10000
1000
100
10000
1000
100
SD453N/ R..S30 Series
SD453N/ R..S20 Series
T = 25°C
J
T = 25° C
J
T = 150°C
J
T = 150°C
J
0.5
1
1.5
2
2.5
3
3.5
0.5
1
1.5
InstantaneousForward Voltage (V)
Fig. 14 - Forward Voltage Drop Characteristics
2
2.5
3
3.5
4
InstantaneousForward Voltage (V)
Fig. 13 - Forward Voltage Drop Characteristics
1
Steady State Value:
R
= 0.1 K/W
thJC
(DC Operation)
0.1
0.01
SD453N/ R..S20/ S30 Series
0.001
0.001
0.01
0.1
Sq u a re Wa v e Pu l se D u ra t io n ( s)
1
10
Fig. 15 - Thermal Impedance ZthJC Characteristic
100
80
60
40
20
0
100
V
V
FP
FP
T = 150°C
T = 150 ° C
J
J
I
I
80
60
40
20
0
T = 25° C
T = 25 ° C
J
J
SD 453 N / R. . S30 Se rie s
1200 1600 2000
SD 453 N/ R. . S20 Se rie s
1200 1600 2000
0
400
800
0
400
800
Rate Of Rise Of Forward Current - di/dt (A/us)
Rate Of Rise Of Forward Current - di/dt (A/us)
Fig. 16 - Typical Forward Recovery Characteristics
Fig. 17 - Typical Forward Recovery Characteristics
Revision: 21-Jan-14
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VS-SD453N/R Series
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6
7
6.5
6
SD 453 N/ R. . S20 Se rie s
T = 150 °C; V > 100V
SD453N/ R..S30 Series
5.5
5
T = 150 °C, V > 100V
r
r
J
J
5.5
5
I
= 1000 A
4.5
4
I
= 1000 A
FM
Sin e Pu lse
FM
Sin e Pu lse
4.5
4
500 A
150 A
500 A
150 A
3.5
3
3.5
3
2.5
2
2.5
2
10
100
1000
10
100
1000
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 18 - Recovery Time Characteristics
Fig. 21 - Recovery Time Characteristics
800
1200
I
= 1000 A
FM
Sin e Pu lse
700
600
500
400
300
200
100
0
I
= 1000 A
FM
Sin e Pu lse
1000
800
600
400
200
0
500 A
500 A
150 A
150 A
SD453N/ R..S30 Series
T = 150 °C; V > 100V
SD 453N/ R. . S20 Se r ie s
T = 150 °C; V > 100V
r
J
J
r
0
50 100 150 200 250 300
0
50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 19 - Recovery Charge Characteristics
Fig. 22 - Recovery Charge Characteristics
450
550
I
= 1000 A
FM
I
= 1000 A
500
450
400
350
300
250
200
150
100
50
FM
400
350
300
250
200
150
100
50
Sine Pulse
Sin e Pu lse
500 A
500 A
150 A
150 A
SD 453N / R. . S30 Se r ie s
SD 453 N/ R. . S20 Se r ie s
T = 150 °C; V > 100V
T = 150 °C; V > 100V
r
J
r
J
0
0
0
50 100 150 200 250 300
0
50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 20 - Recovery Current Characteristics
Fig. 23 - Recovery Current Characteristics
Revision: 21-Jan-14
Document Number: 93176
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1E4
1E3
1E2
1E4
1E3
1E2
10 joulesper pulse
6
tp
4
2
1
0.6
0.4
200 100
50 Hz
400
600
0.2
1000
1500
2000
3000
4000
6000
0.1
SD 453 N/ R.. S20 Se rie s
Tra p e zo i d a l Pu l se
T = 70°C, VRRM = 800V
dCv/dt = 1000V/us,
d i/ dt = 300A/us
SD 4 5 3 N / R.. S2 0 Se r ie s
Sinusoidal Pulse
T = 150°C, VRRM = 800V
dv/dt = 1000V/ µs
J
tp
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Ba se w id t h ( µs)
Pulse Ba se w id t h (µs)
Fig. 24 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 27 - Frequency Characteristics
1E4
1E3
1E2
1E4
1E3
1E2
SD 4 5 3 N / R.. S2 0 Se r ie s
Trapezoidal Pulse
T = 1 5 0 ° C , V = 8 0 0 V
J
RRM
dv/dt = 1000V/µs
di/ dt = 100A/µs
10 joulesper pulse
6
1000
600
4
400
1500
2000
3000
4000
200
100
2
50 Hz
1
tp
0.6
SD 453 N/ R.. S20 Se rie s
Sin u so id a l Pu lse
T = 70°C, VRRM = 800V
dCv/dt = 1000V/us
0.4
6000
10000
tp
0.2
1E1
1 E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Ba sewid t h (µs)
Fig. 25 - Frequency Characteristics
Pulse Ba sewid th (µs)
Fig. 28 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
1E3
1E2
1E4
1E3
1E2
10 joulesper pulse
tp
6
4
2
1
1000
600
400
200
0.8
100
50 Hz
1500
2000
3000
4000
0.6
0.4
SD453N/R..S20 Series
Tr a p e zo id a l Pu lse
SD 4 53 N/ R. . S20 Se ri e s
Trapezoidal Pulse
T = 70°C, VRRM = 800V
C
T = 150°C, VRRM = 800V
J
6000
dv/dt = 1000V/us,
di/ dt = 100A/us
tp
dv/dt = 1000V/µs; di/dt = 300A/µs
1E1
1E2
Pu lse Ba se w id t h (µs)
Fig. 29 - Frequency Characteristics
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Ba sew id t h (µs)
Fig. 26 - Maximum Total Energy Loss
Per Pulse Characteristics
Revision: 21-Jan-14
Document Number: 93176
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1E4
1E3
1E2
1E4
1E3
1E2
10 joules per pulse
6
4
tp
2
1
0.8
0.6
0.4
100
200
50 Hz
400
0.2
0.1
600
1000
2000
3000
4000
SD 4 5 3N / R. . S30 Se rie s
Tr a p e zo id a l Pu lse
T = 70°C, VRRM = 800V
dv/dt = 1000V/us,
di/dt = 300A/us
SD453N/ R...S30 Series
Sinusoidal Pulse
T = 150°C, VRRM = 800V
dJv/dt = 1000V/µs
tp
1E1
1E2
1E3
1E4
1E1
1E2
Pulse Ba sew id th (µs)
Fig. 33 - Frequency Characteristics
1E3
1E4
Pulse Ba sew id t h (µs)
Fig. 30 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
1E3
1E2
1E4
1E3
1E2
10 joulesper pulse
6000
400
6
200
100
50 Hz
1000
1500
2000
3000
4
2
1
0.8
0.6
0.4
SD 453 N/ R.. S3 0 Se rie s
Sin u so id a l Pu lse
T = 70°C, VRRM = 800V
dCv/dt = 1000V/us
4000
6000
SD 4 5 3 N / R. . S3 0 Se r ie s
Trapezoidal Pulse
tp
T = 1 5 0 ° C , V RRM = 8 0 0 V
J
tp
dv/ dt = 1000V/µs; di/dt = 100A/ µs
1E1
1E2
Pulse Ba sew id th (µs)
Fig. 31 - Frequency Characteristics
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Ba sew id t h (µs)
Fig. 34 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
1E3
1E2
1E4
1E3
1E2
10 joulesper pulse
tp
6
4
2
50 Hz
200 100
400
600
1000
1
1500
2000
3000
4000
0.8
0.6
SD453N/ R. . S30 Series
Tra p e zo i d a l Pu l se
T = 70°C, VRRM = 800V
dv/dt = 1000V/us,
di/ dt = 100A/ us
SD453N/R..S30 Series
Trapezoidal Pulse
T = 150°C, VRRM = 800V
C
J
tp
dv/dt = 1000V/µs; di/dt = 300A/µs
1E1
1E2
Pulse Basewidth (µs)
Fig. 35 - Frequency Characteristics
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Ba sew id th (µs)
Fig. 32 - Maximum Total Energy Loss
Per Pulse Characteristics
Revision: 21-Jan-14
Document Number: 93176
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VS-SD453N/R Series
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ORDERING INFORMATION TABLE
Device code
VS- SD
45
3
N
25 S30
P
S
C
1
2
3
4
5
6
7
8
9
10
-
-
-
-
-
Vishay Semiconductors product
Diode
1
2
3
4
5
Essential part number
3 = Fast recovery
N = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
-
-
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
trr code (see Recovery Characteristics table)
P = Stud base B-8 3/4" 16UNF-2A
M = Stud base B-8 M24 x 1.5
6
7
8
-7
9
S = Isolated lead with silicon sleeve
(red = Reverse polarity; blue = Normal polarity)
None = Not isolated lead
T = Threaded top terminal 3/8" 24UNF-2A
C = Ceramic housing
-
10
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95303
Revision: 21-Jan-14
Document Number: 93176
9
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
B-8
DIMENSIONS in millimeters (inches)
Ceramic housing
26 (1.023) MAX.
5 (0.20) 0.3 (0.01)
10.5 (0.41) DIA.
12 (0.47) MIN.
C.S. 70 mm2
245 (9.645)
255 (10.04)
38 (1.5)
DIA. MAX.
80 (3.15)
MAX.
115 (4.52) MIN.
47 (1.85)
MAX.
21 (0.83) MAX.
SW 45
27.5 (1.08)
MAX.
3/4"-16UNF-2A *
*For metric device: M24 x 1.5 - length 21 (0.83) MAX.
contact factory
Document Number: 95303
Revision: 11-Apr-08
For technical questions, contact: indmodules@vishay.com
www.vishay.com
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Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
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