VS-ST103S04PDN0P [VISHAY]
Silicon Controlled Rectifier,;
| 型号： | VS-ST103S04PDN0P |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, |
| 文件： | 总10页 (文件大小：1437K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-ST103SP Series
Vishay Semiconductors
www.vishay.com
Inverter Grade Thyristors
(Stud Version), 105 A
FEATURES
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• High surge current capability
• Low thermal impedance
• High speed performance
• Compression bonding
TO-209AC (TO-94)
PRODUCT SUMMARY
Package
Diode variation
IT(AV)
TO-209AC (TO-94)
Single SCR
105 A
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
VDRM/VRRM
VTM
400 V to 800 V
1.73 V
TYPICAL APPLICATIONS
• Inverters
ITSM at 50 Hz
ITSM at 60 Hz
IGT
3000 A
• Choppers
3150 A
• Induction heating
• All types of force-commutated converters
200 mA
TC/Ths
200 mA
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
105
UNITS
A
IT(AV)
TC
85
°C
IT(RMS)
165
50 Hz
60 Hz
50 Hz
60 Hz
3000
A
ITSM
3150
45
I2t
kA2s
41
VDRM/VRRM
400 to 800
10 to 25
-40 to 125
V
tq
Range
μs
°C
TJ
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VOLTAGE
CODE
TYPE NUMBER
04
08
400
800
500
900
VS-ST103S
30
Revision: 11-Mar-14
Document Number: 94365
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Vishay Semiconductors
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CURRENT CARRYING CAPABILITY
ITM
ITM
ITM
FREQUENCY
UNITS
100 µs
180° el
180° el
50 Hz
280
310
180
200
200
210
440
470
480
490
330
300
310
320
4730
2500
1530
840
3630
1850
1090
580
400 Hz
A
V
1000 Hz
320
340
2500 Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current dI/dt
Case temperature
Equivalent values for RC circuit
50
VDRM
50
50
50
VDRM
-
VDRM
-
A/μs
°C
60
85
60
85
60
85
22/0.15
22/0.15
22/0.15
μF
ON-STATE CONDUCTION
PARAMETER
SYMBOL
IT(AV)
TEST CONDITIONS
VALUES
105
85
UNITS
A
Maximum average on-state current
at case temperature
180° conduction, half sine wave
°C
Maximum RMS on-state current
IT(RMS)
DC at 76 °C case temperature
165
3000
3150
2530
2650
45
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
A
Maximum peak, one half cycle,
non-repetitive surge current
ITSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
41
Maximum I2t for fusing
I2t
kA2s
32
100 % VRRM
reapplied
29
Maximum I2t for fusing
I2t
t = 0.1 to 10 ms, no voltage reapplied
450
kA2s
ITM = 300 A, TJ = TJ maximum,
tp = 10 ms sine wave pulse
Maximum peak on-state voltage
VTM
1.73
(16.7 % x x IT(AV) < I < x IT(AV)),
V
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
VT(TO)1
VT(TO)2
rt1
1.32
1.35
1.40
TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
(16.7 % x x IT(AV) < I < x IT(AV)),
TJ = TJ maximum
m
High level value of forward slope
resistance
rt2
(I > x IT(AV)), TJ = TJ maximum
1.30
Maximum holding current
Typical latching current
IH
IL
TJ = 25 °C, IT > 30 A
600
mA
TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of
rise of turned on current
dI/dt
TJ = TJ maximum, VDRM = Rated VDRM, ITM = 2 x dI/dt
1000
A/μs
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs
Resistive load, gate pulse: 10 V, 5 source
Typical delay time
td
tq
0.80
μs
minimum
Maximum turn-off time
maximum
10
25
TJ = TJ maximum, ITM = 100 A, commutating dI/dt = 10 A/μs
V
R = 50 V, tp = 200 μs, dV/dt: See table in device code
Revision: 11-Mar-14
Document Number: 94365
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST103SP Series
Vishay Semiconductors
www.vishay.com
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum critical rate of rise of
TJ = TJ maximum, linear to 80 % VDRM,
dV/dt
500
30
V/μs
mA
off-state voltage
higher value available on request
Maximum peak reverse and off-state
leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES UNITS
Maximum peak gate power
40
W
5
TJ = TJ maximum, f = 50 Hz, d% = 50
Maximum average gate power
PG(AV)
IGM
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
5
20
5
A
+VGM
-VGM
IGT
TJ = TJ maximum, tp 5 ms
V
200
3
mA
V
TJ = 25 °C, VA = 12 V, Ra = 6
VGT
IGD
20
0.25
mA
V
TJ = TJ maximum, rated VDRM applied
VGD
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum junction operating
temperature range
TJ
-40 to 125
°C
Maximum storage temperature range
TStg
-40 to 150
Maximum thermal resistance,
RthJC
DC operation
0.195
K/W
0.08
junction to case
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
Non-lubricated threads
15.5
(137)
N · m
Mounting torque, 10 %
(lbf in)
14
Lubricated threads
(120)
Approximate weight
Case style
130
g
See dimensions - link at the end of datasheet
TO-209AC (TO-94)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
120°
90°
0.034
0.040
0.052
0.076
0.126
0.025
0.042
0.056
0.079
0.127
TJ = TJ maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 11-Mar-14
Document Number: 94365
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VS-ST103SP Series
Vishay Semiconductors
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130
120
110
100
90
130
120
110
100
90
ST103S Series
RthJC (DC) = 0.195 K/W
ST103S Series
RthJC (DC) = 0.195 K/W
Ø
Conduction period
Ø
Conduction angle
80
30°
60° 90° 120° 180°
30° 60° 90°
120° 180°
DC
80
70
0
10 20 30 40 50 60 70 80 90 100 110
0
20 40 60 80 100 120 140 160 180
Average On-State Current (A)
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
180
160
140
120
100
80
180
160
140
120
100
80
180°
120°
90°
60°
30°
RMS limit
Ø
60
60
Conduction angle
40
40
ST083S Series
TJ = 125 °C
20
20
0
0
0
10 20 30 40 50 60 70 80 90 100 110
25
50
75
100
125
Average On-State Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
260
240
220
200
180
160
140
120
100
80
260
240
220
200
180
160
140
120
100
80
DC
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction angle
60
60
ST103S Series
TJ = 125 °C
40
40
20
20
0
0
0
20 40 60 80 100 120 140 160 180
25
50
75
100
125
Average On-State Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
Revision: 11-Mar-14
Document Number: 94365
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST103SP Series
Vishay Semiconductors
www.vishay.com
2800
2600
2400
2200
2000
1800
1600
1400
1200
1
At any rated load condition and with
rated VRRM applied following surge
Steady state value
RthJC = 0.195 K/W
(DC operation)
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
0.1
ST103S Series
ST103S Series
0.01
1
10
100
0.001
0.01
0.1
1
10
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Square Wave Pulse Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 8 - Thermal Impedance ZthJC Characteristic
3000
160
140
120
100
80
Maximum non repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
Initial TJ = 125 °C
ITM = 500 A
ST103S Series
2800
2600
2400
2200
2000
1800
1600
1400
1200
TJ = 125 °C
ITM = 300 A
No voltage reapplied
Rated VRRM reapplied
ITM = 200 A
ITM = 100 A
60
ITM = 50 A
40
ST103S Series
20
0.01
0.1
1
10 20 30 40 50 60 70 80 90 100
Pulse Train Duration (s)
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 9 - Reverse Recovered Charge Characteristics
10 000
120
110
100
90
80
70
60
50
40
30
20
10
ITM = 500 A
ITM = 300 A
ITM = 200 A
ITM = 100 A
ITM = 50 A
TJ = 25 °C
TJ = 125 °C
1000
ST103S Series
ST103S Series
TJ = 125 °C
100
1
2
3
4
5
6
10 20 30 40 50 60 70 80 90 100
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Reverse Recovery Current Characteristics
Revision: 11-Mar-14
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Vishay Semiconductors
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10 000
1000
100
10000
1000
100
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
ST103S Series
Sinusoidal pulse
TC = 85 °C
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
tp
2000 1000 400 200 100 50 Hz
5000
10 000
2000 1000 400 200 100 50 Hz
10 000 5000
ST103S Series
Sinusoidal pulse
TC = 60 °C
tp
10
10
10
100
1000
10 000
10
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 11 - Frequency Characteristics
10 000
1000
100
10 000
ST103S Series
Trapezoidal pulse
TC = 85 °C
Snubber circuit
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
tp
dI/dt = 50 A/µs
1500
1000
1000 400 200 100
50 Hz
2500
5000
1500
5000
50 Hz
200 100
1000 400
2500
ST103S Series
Trapezoidal pulse
TC = 60 °C
tp
dI/dt = 50 A/µs
100
100
1000
10 000
10
Fig. 12 - Frequency Characteristics
10 000
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
10 000
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
ST103S Series
Snubber circuit
Trapezoidal pulse Rs = 22 Ω
TC = 85 °C
Cs = 0.15 µF
VD = 80 % VDRM
tp
dI/dt = 100 A/µs
1500
1000
1000
5000
1000 400 200 100
50 Hz
2500
10 000
5000
2500
100
10 000
ST103S Series
Trapezoidal pulse
TC = 60 °C
1500
400
1000
200 100
50 Hz
tp
dI/dt = 100 A/µs
100
100
100
1000
10 000
10
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 13 - Frequency Characteristics
Revision: 11-Mar-14
Document Number: 94365
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VS-ST103SP Series
Vishay Semiconductors
www.vishay.com
100 000
10 000
1000
100
100 000
10 000
1000
100
ST103S Series
Rectangular pulse
dI/dt = 50 A/µs
tp
20 joules per pulse
10
20 joules per pulse
10
5
3
2
1
5
0.5
3
2
0.2
1
0.5
0.1
0.2
0.1
ST103S Series
Sinusoidal pulse
tp
10
10
10
100
1000
10 000
10
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
100
Rectangular gate pulse
(1) PGM = 10 W, tp = 20 ms
(2) PGM = 20 W, tp = 10 ms
(3) PGM = 40 W, tp = 5 ms
(4) PGM = 60 W, tp = 3.3 ms
a) Recommended load line for
rated di/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated di/dt: 10 V, 10 Ω
tr ≤ 1 µs
(a)
(b)
10
1
(1)
(2)
(3) (4)
VGD
IGD
Device: ST103S Series
0.1
Frequency limited by PG(AV)
10
0.1
0.001
0.01
1
100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
Revision: 11-Mar-14
Document Number: 94365
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VS-ST103SP Series
Vishay Semiconductors
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ORDERING INFORMATION TABLE
Device code
VS-
ST
10
3
S
08
P
F
N
0
P
1
2
3
4
5
6
7
8
9
10
11
1
-
-
-
-
-
-
Vishay Semiconductors product
Thyristor
2
3
Essential part number
3 = Fast turn-off
4
S = Compression bonding stud
5
Voltage code x 100 = VRRM (see Voltage ratings table)
6
dV/dt - tq combinations available
dV/dt (V/µs) 20 50 100 200 400
7
-
-
-
-
P = Stud base 1/2"-20UNF-2A
Reapplied dV/dt code (for tq test conditions)
tq code
8
10
12
15
18
20
25
CN DN EN FN*
-
9
CM DM EM FM HM
CL DL EL FL* HL
CP DP EP FP HP
CK DK EK FK HK
tq (µs)
0 = Eyelet terminals
(gate and aux. cathode leads)
10
-
-
-
-
HJ
1 = Fast-on terminals
(gate and aux. cathode leads)
* Standard part number.
All other types available only on request.
11
-
-
None = Standard production
P = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95003
Revision: 11-Mar-14
Document Number: 94365
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Outline Dimensions
Vishay Semiconductors
TO-209AC (TO-94) for ST083S and ST103S Series
DIMENSIONS in millimeters (inches)
Ceramic housing
2.6 (0.10) MAX.
16.5 (0.65) MAX.
Ø 8.5 (0.33)
Ø 4.3 (0.17)
9.5 (0.37) MIN.
Flexible lead
20 (0.79) MIN.
C.S. 16 mm2
(0.025 s.i.)
C.S. 0.4 mm2
(0.0006 s.i.)
Red silicon rubber
Red cathode
157 (6.18)
170 (6.69)
215 10
(8.46 0.39)
White gate
Red shrink
70 (2.75)
MIN.
White shrink
Ø 22.5 (0.88) MAX.
29 (1.14)
MAX.
12.5 (0.49) MAX.
21 (0.83)
MAX.
SW 27
1/2"-20UNF-2A
29.5 (1.16) MAX.
Document Number: 95003
Revision: 30-Sep-08
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1
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Document Number: 91000
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