VS-ST230C08C2L [VISHAY]
Silicon Controlled Rectifier,;
| 型号： | VS-ST230C08C2L |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, |
| 文件： | 总8页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-ST230C Series
Vishay Semiconductors
www.vishay.com
Phase Control Thyristors
(Hockey PUK Version), 410 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case TO-200AB (A-PUK)
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
TO-200AB (A-PUK)
• Controlled DC power supplies
• AC controllers
PRODUCT SUMMARY
Package
Diode variation
IT(AV)
TO-200AB (A-PUK)
Single SCR
410 A
400 V, 800 V, 1200 V, 1400 V,
1600 V, 1800 V, 2000 V
V
DRM/VRRM
VTM
IGT
TJ
1.69 V
90 mA
-40 °C to 125 °C
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
410
UNITS
A
°C
A
IT(AV)
Ths
55
780
IT(RMS)
ITSM
I2t
Ths
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
5700
A
5970
163
kA2s
149
VDRM/VRRM
400 to 2000
100
V
tq
Typical
μs
°C
TJ
-40 to 125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VDRM/VRRM, MAXIMUM
V
RSM, MAXIMUM
IDRM/IRRM, MAXIMUM
AT TJ = TJ MAXIMUM
mA
VOLTAGE REPETITIVE PEAK AND OFF-STATE
TYPE NUMBER
NON-REPETITIVE PEAK VOLTAGE
V
CODE
VOLTAGE
V
04
08
12
14
16
18
20
400
800
500
900
1200
1400
1600
1800
2000
1300
1500
1700
1900
2100
VS-ST230C..C
30
Revision: 16-Dec-13
Document Number: 94398
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST230C Series
Vishay Semiconductors
www.vishay.com
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
IT(AV)
TEST CONDITIONS
VALUES
410 (165)
55 (85)
780
UNITS
A
Maximum average on-state current
at heatsink temperature
180° conduction, half sine wave
double side (single side) cooled
°C
Maximum RMS on-state current
IT(RMS)
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
5700
5970
4800
5000
163
No voltage
reapplied
t = 8.3 ms
A
Maximum peak, one-cycle
non-repetitive surge current
ITSM
t = 10 ms
100 % VRRM
reapplied
t = 8.3 ms
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms
No voltage
reapplied
t = 8.3 ms
148
Maximum I2t for fusing
I2t
kA2s
t = 10 ms
115
100 % VRRM
reapplied
t = 8.3 ms
105
Maximum I2t for fusing
I2t
VT(TO)1
VT(TO)2
rt1
t = 0.1 to 10 ms, no voltage reapplied
1630
0.92
kA2s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
V
0.98
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
0.88
m
V
rt2
0.81
VTM
IH
Ipk = 880 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.69
Maximum holding current
600
TJ = 25 °C, anode supply 12 V resistive load
mA
Maximum (typical) latching current
IL
1000 (300)
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of rise
of turned-on current
Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM
dI/dt
1000
A/μs
Gate current 1 A, dIg/dt = 1 A/μs
Typical delay time
td
tq
1.0
Vd = 0.67 % VDRM, TJ = 25 °C
μs
ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/μs,
Typical turn-off time
100
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
TJ = TJ maximum, rated VDRM/VRRM applied
500
V/μs
of off-state voltage
Maximum peak reverse and
off-state leakage current
IRRM
,
30
mA
IDRM
Revision: 16-Dec-13
Document Number: 94398
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST230C Series
Vishay Semiconductors
www.vishay.com
TRIGGERING
VALUES
UNITS
PARAMETER
SYMBOL
TEST CONDITIONS
TJ = TJ maximum, tp 5 ms
TYP.
MAX.
Maximum peak gate power
PGM
PG(AV)
IGM
10.0
W
A
Maximum average gate power
TJ = TJ maximum, f = 50 Hz, d% = 50
2.0
3.0
20
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
TJ = TJ maximum, tp 5 ms
+ VGM
- VGM
TJ = TJ maximum, tp 5 ms
V
5.0
TJ = - 40 °C
TJ = 25 °C
180
90
-
150
-
DC gate current required to trigger
DC gate voltage required to trigger
IGT
mA
V
Maximum required gate trigger/
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
40
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
2.9
1.8
1.2
-
VGT
3.0
-
Maximum gate current/voltage
not to trigger is the maximum
TJ = TJ maximum value which will not trigger any
unit with rated VDRM anode to
cathode applied
DC gate current not to trigger
DC gate voltage not to trigger
IGD
10
mA
V
VGD
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.17
UNITS
Maximum operating temperature range
Maximum storage temperature range
TJ
°C
TStg
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance,
junction to heatsink
RthJ-hs
0.08
K/W
0.033
Maximum thermal resistance,
case to heatsink
RthC-hs
0.017
4900
(500)
N
(kg)
Mounting force, 10 %
Approximate weight
Case style
50
g
See dimensions - link at the end of datasheet
TO-200AB (A-PUK)
RthJC CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINGLE SIDE
0.015
DOUBLE SIDE
0.017
SINGLE SIDE
0.011
DOUBLE SIDE
0.011
180°
120°
90°
0.018
0.019
0.019
0.019
0.024
0.024
0.026
0.026
TJ = TJ maximum
K/W
60°
0.035
0.035
0.036
0.036
30°
0.060
0.060
0.060
0.061
Note
•
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 16-Dec-13
Document Number: 94398
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST230C Series
Vishay Semiconductors
www.vishay.com
130
120
110
100
90
130
120
110
100
90
ST230C..C Series
(Double Side Cooled)
ST230C..C Series
(Single Side Cooled)
(DC) = 0.17 K/W
R
(DC) = 0.08 K/W
R
thJ-hs
thJ-hs
Conduction Period
80
Conduction Angle
70
80
30°
30°
60
60°
70
60°
90°
90°
50
120°
60
120°
40
180°
180°
50
30
DC
40
20
0
40 80 120 160 200 240 280 320
0
100 200 300 400 500 600 700 800
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
130
1100
ST230C..C Series
(Single Side Cooled)
180°
120°
90°
60°
30°
120
110
100
90
1000
900
800
700
600
500
400
300
200
100
0
R
(DC) = 0.17 K/W
thJ-hs
RMS Limit
Conduction Period
80
70
60
Conduction Angle
30°
60°
50
90°
ST230C..C Series
= 125°C
40
T
120°
J
30
180°
DC
20
0
100
200
300
400
500
0
100 200 300 400 500 600
Average On-state Current (A)
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
1400
DC
130
ST230C..C Series
120
110
100
90
180°
120°
90°
60°
(Double Side Cooled)
1200
R
(DC) = 0.08 K/W
thJ-hs
1000
30°
800
Conduction Angle
80
RMS Limit
70
600
30°
Conduction Period
60
60°
400
90°
50
120°
180°
ST230C..C Series
40
200
0
T
= 125°C
J
30
20
0
200
400
600
800 1000
0
100 200 300 400 500 600
Average On-state Current (A)
Average On-state Current (A)
Fig. 6 - On-State Power Loss Characteristics
Document Number: 94398
Fig. 3 - Current Ratings Characteristics
Revision: 16-Dec-13
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST230C Series
Vishay Semiconductors
www.vishay.com
5500
5000
4500
4000
3500
3000
2500
2000
6500
6000
5500
5000
4500
4000
3500
3000
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 125°C
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial Tj = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Voltage Reapplied
Rated Vrrm Reapplied
ST230C..C Series
10
2500 ST230C..C Series
2000
1
100
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
1000
100
Tj = 25°C
Tj = 125°C
ST230C..C Series
0.5
1
1.5
Instantaneous On-state Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
2
2.5
3
3.5
4
4.5
1
0.1
Steady State Value
= 0.17 K/W
R
thJ-hs
(Single Side Cooled)
= 0.08 K/W
R
thJ-hs
(Double Side Cooled)
(DC Operation)
0.01
0.001
ST230C..C Series
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Revision: 16-Dec-13
Document Number: 94398
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST230C Series
Vishay Semiconductors
www.vishay.com
100
(1) PGM = 10W, tp = 4ms
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
(a)
10
1
(b)
(1)
(3)
(4)
(2)
VGD
IGD
Frequency Limited by PG(AV)
Device: ST230C..C Series
0.1
0.001
0.01
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS- ST
23
0
C
20
C
1
-
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
-
-
-
-
Vishay Semiconductors product
Thyristor
Essential part number
0 = Converter grade
-
-
-
-
C = Ceramic PUK
Voltage code x 100 = VRRM (see Voltage Ratings table)
C = PUK case TO-200AB (A-PUK)
7
8
0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
Critical dV/dt: None = 500 V/µs (Standard selection)
L = 1000 V/µs (Special selection)
9
-
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95074
Revision: 16-Dec-13
Document Number: 94398
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-200AB (A-PUK)
DIMENSIONS in millimeters (inches)
Anode to gate
Creepage distance: 7.62 (0.30) minimum
Strike distance: 7.12 (0.28) minimum
19 (0.75)
DIA. MAX.
0.3 (0.01) MIN.
13.7/14.4
(0.54/0.57)
0.3 (0.01) MIN.
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
6.5 (0.26)
4.75 (0.19)
25° 5°
42 (1.65) MAX.
28 (1.10)
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Document Number: 95074
Revision: 01-Aug-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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