VS-ST330S04P0PBF [VISHAY]
Silicon Controlled Rectifier,;
| 型号： | VS-ST330S04P0PBF |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, |
| 文件： | 总8页 (文件大小：195K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-ST330SPbF Series
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Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 330 A
FEATURES
• Center amplifying gate
• International standard case TO-118 (TO-209AE)
• Hermetic metal case with ceramic insulator
TO-118 (TO- 209AE)
• Compression bonded encapsulation for heavy
duty operations such as severe thermal cycling
• Designed and qualified for industrial level
PRIMARY CHARACTERISTICS
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
IT(AV)
330 A
400 V, 800 V, 1200 V, 1400 V,
1600 V, 2000 V
VDRM/VRRM
TYPICAL APPLICATIONS
• DC motor controls
VTM
1.52 V
200 mA
IGT
TJ
• Controlled DC power supplies
• AC controllers
-40 °C to +125 °C
TO-118 (TO-209AE)
Single SCR
Package
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
330
UNITS
A
IT(AV)
TC
75
°C
IT(RMS)
520
50 Hz
60 Hz
50 Hz
60 Hz
9000
A
ITSM
9420
405
I2t
kA2s
370
V
DRM/VRRM
400 to 2000
100
V
tq
Typical
µs
°C
TJ
-40 to +125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM/VRRM, MAXIMUM REPETITIVE
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM AT
TJ = TJ MAXIMUM
mA
VOLTAGE
CODE
TYPE NUMBER
PEAK AND OFF-STATE VOLTAGE
V
04
08
12
14
16
20
400
500
900
800
1200
1400
1600
2000
1300
1500
1700
2100
VS-ST330S
50
Revision: 27-Sep-17
Document Number: 94409
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
IT(AV)
TEST CONDITIONS
VALUES UNITS
180° conduction, half sine wave
330
75
A
Maximum average on-state current
at case temperature
°C
Maximum RMS on-state current
IT(RMS)
DC at 75 °C case temperature
520
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
9000
9420
7570
7920
405
No voltage
reapplied
A
Maximum peak, one-cycle
non-repetitive surge current
ITSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
370
Maximum I2t for fusing
I2t
kA2s
287
100 % VRRM
reapplied
262
Maximum I2t for fusing
I2t
VT(TO)1
VT(TO)2
rt1
t = 0.1 to 10 ms, no voltage reapplied
4050
0.834
0.898
0.687
0.636
1.52
600
kA2s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
V
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
m
V
rt2
VTM
IH
Ipk = 1000 A, TJ = TJ maximum, tp = 10 ms sine pulse
Maximum holding current
TJ = 25 °C, anode supply 12 V resistive load
mA
Typical latching current
IL
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current
Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM
dI/dt
1000
A/µs
Gate current A, dIg/dt = 1 A/μs
Typical delay time
td
tq
1.0
Vd = 0.67 % VDRM, TJ = 25 °C
µs
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,
Typical turn-off time
100
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
TJ = TJ maximum, rated VDRM/VRRM applied
500
50
V/µs
mA
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
Revision: 27-Sep-17
Document Number: 94409
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST330SPbF Series
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TRIGGERING
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
TYP. MAX.
Maximum peak gate power
PGM
PG(AV)
IGM
TJ = TJ maximum, tp 5 ms
10.0
2.0
3.0
20
W
A
Maximum average gate power
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp 5 ms
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
+VGM
-VGM
TJ = TJ maximum, tp 5 ms
V
5.0
TJ = -40 °C
TJ = 25 °C
200
100
50
-
200
-
DC gate current required to trigger
DC gate voltage required to trigger
IGT
mA
Maximum required gate trigger/
TJ = 125 °C
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
2.5
1.8
1.1
-
VGT
V
3
-
Maximum gate current/voltage
not to trigger is the maximum
TJ = TJ maximum value which will not trigger any
unit with rated VDRM anode to
cathode applied
DC gate current not to trigger
DC gate voltage not to trigger
IGD
10
mA
V
VGD
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
-40 to +125
-40 to +150
0.10
UNITS
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
TJ
°C
TStg
RthJC
RthC-hs
DC operation
K/W
Mounting surface, smooth, flat and greased
0.03
48.5
(425)
N · m
(lbf · in)
Mounting torque, 10 ꢀ
Non-lubricated threads
Approximate weight
Case style
535
g
See dimension - link at the end of datasheet
TO-118 (TO-209AE)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
120°
90°
0.011
0.013
0.017
0.025
0.041
0.008
0.014
0.018
0.026
0.042
TJ = TJ maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 27-Sep-17
Document Number: 94409
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST330SPbF Series
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Vishay Semiconductors
130
120
110
100
90
130
120
110
100
90
ST330 S Se r i e s
thJC
ST3 30S Se ri e s
thJC
R
(DC) = 0.10 K/W
R
(DC) = 0.10 K/W
Conduction Angle
Conduction Period
30°
60°
90°
30°
80
60°
90°
120°
120°
80
70
180°
180° DC
70
60
0
50 100 150 200 250 300 350
Average On-state Current (A)
0
100 200 300 400 500 600
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
480
R
180°
120°
440
=
0
400
360
320
280
240
200
160
120
80
90°
60°
30°
.
0
3
K
/
W
-
D
e
l
t
a
RM S Lim it
R
Conduction Angle
ST3 3 0 S Se r ie s
0
.
6
K
/
W
T = 125 ° C
J
40
0
0
50 100 150 200 250 300
Average On-state Current (A)
3
5
0
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
650
600
550
500
450
400
350
300
250
200
150
100
50
DC
180°
120°
90°
60°
30°
RMS Lim it
Conduction Period
ST3 30S Se ri e s
1
.
2
K
/
W
T = 125°C
J
0
0
100 200 300 400 500
Average On-state Current (A)
6
0
5
0
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
Revision: 27-Sep-17
Document Number: 94409
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST330SPbF Series
www.vishay.com
Vishay Semiconductors
9000
8000
7000
6000
5000
4000
3000
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
Initial T = 125°C
Of Conduction May Not Be Maintained.
J
Initial T = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RRM
ST330SSeries
ST3 3 0 S Se r ie s
1
10
100
0.01
0.1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
1
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 5 - Maximum Non-Repetitive Surge Current
10000
1000
100
Tj = 25 °C
Tj = 125 °C
ST330S Series
0
1
2
3
4
5
6
7
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
1
0.1
St e a d y St a t e V a lu e
= 0.10 K/W
R
thJC
(DC Operation)
0.01
0.001
ST330 S Se ri e s
0.001
0.01
0.1
1
10
Sq u a r e Wa v e Pu lse D u r a t io n ( s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Revision: 27-Sep-17
Document Number: 94409
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST330SPbF Series
www.vishay.com
Vishay Semiconductors
100
Rectangular gate pulse
(1) PGM = 10W, tp = 4ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30%rated di/dt : 10V, 10ohms
tr<=1 µs
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
10
1
(a)
(b)
(2)
(1)
(3) (4)
VGD
IGD
Frequency Limited by PG(AV)
10
De v ic e : ST330S Se ri e s
0.1
0.1
0.001
0.01
1
100
In st a nt a ne o us G a t e C urre nt (A )
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS- ST
33
0
S
16
P
0
PbF
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
-
-
-
-
Vishay Semiconductors product
Thyristor
Essential part number
0 = converter grade
-
-
-
S = compression bonding stud
Voltage code x 100 = VRRM (see Voltage Ratings table)
P = stud base 3/4"-16UNF-2A threads
M = stud base metric threads (M24 x 1.5)
8
9
-
0 = eyelet terminals (gate and auxiliary cathode leads)
1 = fast-on terminals (gate and auxiliary cathode leads)
None = standard production
-
-
PbF = lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95080
Revision: 27-Sep-17
Document Number: 94409
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-209AE (TO-118)
DIMENSIONS in millimeters (inches)
Ceramic housing
22 (0.87) MAX.
4.ꢀ (0.17) DIA.
White gate
10.5 (0.41) NOM.
Red silicon rubber
Red cathode
ꢀ8 (1.50)
MAX. DIA.
White shrink
Red shrink
SW 45
ꢀ/4"16 UNF-2A (1)
49 (1.92) MAX.
Fast-on terminals
4.5 (0.18) MAX.
AMP. 280000-1
REF-250
Flexible leads
C.S. 50 mm2
(0.078 s.i.)
Note
(1)
For metric device: M24 x 1.5 - length 21 (0.83) maximum
Document Number: 95080
Revision: 02-Aug-07
For technical questions, contact: indmodules@vishay.com
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1
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Revision: 08-Feb-17
Document Number: 91000
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